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DISPERSION-MANAGED BREATHING-MODE SEMICONDUCTOR MODE-LOCKED RING LASER: EXPERIMENTAL STUDY, NUMERICAL SIMULATIONS AND APPLICATIONS

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Date Issued:
2004
Abstract/Description:
A novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching the semiconductor saturable absorber. The intracavity pulse compression ratio is higher than 50. Down chirping when compared to up chirping allows broader mode-locked spectra and shorter pulse generation owing to temporal and spectral semiconductor gain dynamics. Pulses as short as 185 fs, with a peak power of ~230 w, and a focused intensity of ~4.6 gw/cm2 are generated by linear down chirp compensation and characterized by shg-frog method. To our knowledge, this is the highest peak power and the shortest pulse generation from an electrically pumped all-semiconductor system. The very good agreement between the simulated and the measured results verifies our understanding and ability to control the physical mechanisms involved in the pulse shaping within the ring cavity. Application trends such as continuum generation via a photonic crystal fiber, two-photon fluorescence imaging, and ultrafast pulse source for pump-probe experiments are demonstrated.
Title: DISPERSION-MANAGED BREATHING-MODE SEMICONDUCTOR MODE-LOCKED RING LASER: EXPERIMENTAL STUDY, NUMERICAL SIMULATIONS AND APPLICATIONS.
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Name(s): Resan, Bojan, Author
Delfyett, Peter J., Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2004
Publisher: University of Central Florida
Language(s): English
Abstract/Description: A novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching the semiconductor saturable absorber. The intracavity pulse compression ratio is higher than 50. Down chirping when compared to up chirping allows broader mode-locked spectra and shorter pulse generation owing to temporal and spectral semiconductor gain dynamics. Pulses as short as 185 fs, with a peak power of ~230 w, and a focused intensity of ~4.6 gw/cm2 are generated by linear down chirp compensation and characterized by shg-frog method. To our knowledge, this is the highest peak power and the shortest pulse generation from an electrically pumped all-semiconductor system. The very good agreement between the simulated and the measured results verifies our understanding and ability to control the physical mechanisms involved in the pulse shaping within the ring cavity. Application trends such as continuum generation via a photonic crystal fiber, two-photon fluorescence imaging, and ultrafast pulse source for pump-probe experiments are demonstrated.
Identifier: CFE0000176 (IID), ucf:46155 (fedora)
Note(s): 2004-12-01
Ph.D.
Optics and Photonics, Other
Doctorate
This record was generated from author submitted information.
Subject(s): optics
lasers
mode-locked lasers
semiconductor lasers
ultrafast pulse generation
ultrafast technology
high power lasers
laser physics
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0000176
Restrictions on Access: public
Host Institution: UCF

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