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ALL-SEMICONDUCTOR HIGH POWER MODE-LOCKED LASER SYSTEM

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Date Issued:
2006
Abstract/Description:
The objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the concept of X-CPA are addressed. Based on theoretical and experimental study, an all-semiconductor mode-locked X-CPA system consisting of a mode-locked master oscillator, an optical pulse pre-stretcher, a semiconductor optical amplifier (SOA) pulse picker, an extreme pulse stretcher/compressor, cascaded optical amplifiers, and a bulk grating compressor is successfully demonstrated and generates >kW record peak power. A potential candidate for generating high average power from an X-CPA system, novel grating coupled surface emitting semiconductor laser (GCSEL) devices, are studied experimentally. The first demonstration of mode-locking with GCSELs and associated amplification characteristics of grating coupled surface emitting SOAs will be presented. In an effort to go beyond the record setting results of the X-CPA system, a passive optical cavity amplification technique in conjunction with the X-CPA system is constructed, and studied experimentally and theoretically.
Title: ALL-SEMICONDUCTOR HIGH POWER MODE-LOCKED LASER SYSTEM.
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Name(s): Kim, Kyungbum, Author
Delfyett, Peter, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2006
Publisher: University of Central Florida
Language(s): English
Abstract/Description: The objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the concept of X-CPA are addressed. Based on theoretical and experimental study, an all-semiconductor mode-locked X-CPA system consisting of a mode-locked master oscillator, an optical pulse pre-stretcher, a semiconductor optical amplifier (SOA) pulse picker, an extreme pulse stretcher/compressor, cascaded optical amplifiers, and a bulk grating compressor is successfully demonstrated and generates >kW record peak power. A potential candidate for generating high average power from an X-CPA system, novel grating coupled surface emitting semiconductor laser (GCSEL) devices, are studied experimentally. The first demonstration of mode-locking with GCSELs and associated amplification characteristics of grating coupled surface emitting SOAs will be presented. In an effort to go beyond the record setting results of the X-CPA system, a passive optical cavity amplification technique in conjunction with the X-CPA system is constructed, and studied experimentally and theoretically.
Identifier: CFE0001069 (IID), ucf:46767 (fedora)
Note(s): 2006-05-01
Ph.D.
Optics and Photonics,
Doctorate
This record was generated from author submitted information.
Subject(s): mode-locked laser
semiconductor laser
optical pulse compression
chirped fiber Bragg grating
ultrafast laser
semiconductor optical amplifier
chirped pulse amplification
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0001069
Restrictions on Access: public
Host Institution: UCF

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