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INVESTIGATION OF PN JUNCTION DELINEATION RESOLUTION USING ELECTRON BEAM INDUCED CURRENT

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Date Issued:
2007
Abstract/Description:
This dissertation will investigate electron beam induced current (EBIC) for determining semiconductor material and device parameters. While previous experimental work on PN junction delineation using EBIC with the scanning electron microscope has resulted in resolution to approximately 10 nm, theoretical study shows the potential use of EBIC for higher resolution (nanometer) PN junction and FET channel length delineation using the transmission electron microscope. Theoretical arguments using computer simulations of electron beam generation volume, collection probability and EBIC were performed and are presented for the purpose of determining EBIC use in a 300 keV transmission electron microscope (TEM) for PN junction depth determination. Measured results indicate that by measuring thin semiconductor samples with high surface recombination velocity and by using a narrow, high-energy electron beam in the STEM mode of a transmission electron microscope, nanometer resolution may be possible. The practical and experimental limits of beam energy and semiconducting material thermal damage will be discussed.
Title: INVESTIGATION OF PN JUNCTION DELINEATION RESOLUTION USING ELECTRON BEAM INDUCED CURRENT.
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Name(s): Hontgas, Christopher, Author
Malocha, Donald, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2007
Publisher: University of Central Florida
Language(s): English
Abstract/Description: This dissertation will investigate electron beam induced current (EBIC) for determining semiconductor material and device parameters. While previous experimental work on PN junction delineation using EBIC with the scanning electron microscope has resulted in resolution to approximately 10 nm, theoretical study shows the potential use of EBIC for higher resolution (nanometer) PN junction and FET channel length delineation using the transmission electron microscope. Theoretical arguments using computer simulations of electron beam generation volume, collection probability and EBIC were performed and are presented for the purpose of determining EBIC use in a 300 keV transmission electron microscope (TEM) for PN junction depth determination. Measured results indicate that by measuring thin semiconductor samples with high surface recombination velocity and by using a narrow, high-energy electron beam in the STEM mode of a transmission electron microscope, nanometer resolution may be possible. The practical and experimental limits of beam energy and semiconducting material thermal damage will be discussed.
Identifier: CFE0001900 (IID), ucf:47494 (fedora)
Note(s): 2007-12-01
Ph.D.
Engineering and Computer Science, School of Electrical Engineering and Computer Science
Doctorate
This record was generated from author submitted information.
Subject(s): EBIC
surface recombination velocity
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0001900
Restrictions on Access: public
Host Institution: UCF

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