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TUNABLE TERAHERTZ DETECTORS BASED ON PLASMON EXCIATION IN TWO DIMENSIONAL ELECTRON GASES IN INGAAS/INP AND ALGAN/GAN HEMT

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Date Issued:
2009
Abstract/Description:
The observation of voltage-tunable plasmon resonances in the terahertz range in two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems is reported. The devices were fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography process and a semi-transparent gate contact that consisted of a 0.5 µm period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the frequency range 10–100 cm-1. The resonance frequency depends on the gate voltage-tuned sheet-charge density of the 2deg. The fundamental and higher resonant harmonics were observed to shift towards lower frequencies with the implementation of negative gate bias. The theory of interaction of sub millimeter waves with 2deg through corrugated structure on top has been applied to calculate and understand the phenomena of resonant plasmon excitations. The observed separation of resonance fundamental from its harmonics and their shift with gate bias follows theory, although the absolute frequencies are lower by about a factor of 2-3 in InGaAs/InP system. However, calculated values match much better with AlGaN/GaN system.
Title: TUNABLE TERAHERTZ DETECTORS BASED ON PLASMON EXCIATION IN TWO DIMENSIONAL ELECTRON GASES IN INGAAS/INP AND ALGAN/GAN HEMT.
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Name(s): Saxena, Himanshu, Author
Peale, Robert, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2009
Publisher: University of Central Florida
Language(s): English
Abstract/Description: The observation of voltage-tunable plasmon resonances in the terahertz range in two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems is reported. The devices were fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography process and a semi-transparent gate contact that consisted of a 0.5 µm period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the frequency range 10–100 cm-1. The resonance frequency depends on the gate voltage-tuned sheet-charge density of the 2deg. The fundamental and higher resonant harmonics were observed to shift towards lower frequencies with the implementation of negative gate bias. The theory of interaction of sub millimeter waves with 2deg through corrugated structure on top has been applied to calculate and understand the phenomena of resonant plasmon excitations. The observed separation of resonance fundamental from its harmonics and their shift with gate bias follows theory, although the absolute frequencies are lower by about a factor of 2-3 in InGaAs/InP system. However, calculated values match much better with AlGaN/GaN system.
Identifier: CFE0002912 (IID), ucf:47994 (fedora)
Note(s): 2009-12-01
Ph.D.
Sciences, Department of Physics
Doctorate
This record was generated from author submitted information.
Subject(s): HEMT
Plasmon
THz
2deg
InGaAs/InP
Heterostructure
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0002912
Restrictions on Access: public
Host Institution: UCF

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