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EPITAXIAL GROWTH, CHARACTERIZATION AND APPLICATION OF NOVEL WIDE BANDGAP OXIDE SEMICONDUCTORS

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Date Issued:
2010
Abstract/Description:
In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited - and possibly even juxtaposed - to realize novel wide band gap optoelectronic technologies. The results of the research conducted presented herein overwhelmingly support this hypothesis in that they confirm the possibility to grow these films with sufficient quality by this technique, as conjectured. NixMg1-xO films with varying Nickel concentrations ranging from x = 0 to x = 1 have been grown on lattice matched MgO substrates (lattice mismatch ε < 0.01) and characterized structurally, morphologically, optically and electrically. Similarly, cubic ZnxMg1-xO films with Zinc concentrations ranging from x = 0 to x ≈ 0.53, as limited by phase segregation, have also been grown and characterized. Photoconductive devices have been designed and fabricated from these films and characterized. Successfully engineered films in both categories exhibit the desired deep ultraviolet photoresponse and therefore verify the hypothesis. While the culminating work of interest here focuses on the two compounds discussed above, the investigation has also involved the characterization or exploitation of related films including hexagonal phase ZnxMg1-xO, ZnO, CdxZn1-xO and hybrid structures based on these compounds used in conjunction with GaN. These works were critical precursors to the growth of cubic oxides, however, and are closely relevant. Viewed in its entirety, this document can therefore be considered a multifaceted interrogation of several novel oxide compounds and structures, both cubic and wurtzite in structure. The conclusions of the research can be stated succinctly as a quantifiably successful effort to validate the use of these compounds and structures for wide bandgap optoelectronic technologies.
Title: EPITAXIAL GROWTH, CHARACTERIZATION AND APPLICATION OF NOVEL WIDE BANDGAP OXIDE SEMICONDUCTORS.
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Name(s): Mares, Jeremy, Author
Schoenfeld, Winston, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2010
Publisher: University of Central Florida
Language(s): English
Abstract/Description: In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited - and possibly even juxtaposed - to realize novel wide band gap optoelectronic technologies. The results of the research conducted presented herein overwhelmingly support this hypothesis in that they confirm the possibility to grow these films with sufficient quality by this technique, as conjectured. NixMg1-xO films with varying Nickel concentrations ranging from x = 0 to x = 1 have been grown on lattice matched MgO substrates (lattice mismatch ε < 0.01) and characterized structurally, morphologically, optically and electrically. Similarly, cubic ZnxMg1-xO films with Zinc concentrations ranging from x = 0 to x ≈ 0.53, as limited by phase segregation, have also been grown and characterized. Photoconductive devices have been designed and fabricated from these films and characterized. Successfully engineered films in both categories exhibit the desired deep ultraviolet photoresponse and therefore verify the hypothesis. While the culminating work of interest here focuses on the two compounds discussed above, the investigation has also involved the characterization or exploitation of related films including hexagonal phase ZnxMg1-xO, ZnO, CdxZn1-xO and hybrid structures based on these compounds used in conjunction with GaN. These works were critical precursors to the growth of cubic oxides, however, and are closely relevant. Viewed in its entirety, this document can therefore be considered a multifaceted interrogation of several novel oxide compounds and structures, both cubic and wurtzite in structure. The conclusions of the research can be stated succinctly as a quantifiably successful effort to validate the use of these compounds and structures for wide bandgap optoelectronic technologies.
Identifier: CFE0003125 (IID), ucf:48625 (fedora)
Note(s): 2010-05-01
Ph.D.
Optics and Photonics, College of Optics and Photonics
Doctorate
This record was generated from author submitted information.
Subject(s): thin film
oxide
molecular beam epitaxy
wide bandgap
NiO
MBE
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0003125
Restrictions on Access: public
Host Institution: UCF

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