You are here
Investigation on electrical properties of RF sputtered deposited BCN thin films
- Date Issued:
- 2013
- Abstract/Description:
- The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance.Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B(&)#172;4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.
Title: | Investigation on electrical properties of RF sputtered deposited BCN thin films. |
39 views
18 downloads |
---|---|---|
Name(s): |
Prakash, Adithya, Author Sundaram, Kalpathy, Committee Chair Yuan, Jiann-Shiun, Committee Member Lin, Mingjie, Committee Member , Committee Member University of Central Florida, Degree Grantor |
|
Type of Resource: | text | |
Date Issued: | 2013 | |
Publisher: | University of Central Florida | |
Language(s): | English | |
Abstract/Description: | The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance.Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B(&)#172;4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters. | |
Identifier: | CFE0004912 (IID), ucf:49625 (fedora) | |
Note(s): |
2013-08-01 M.S.E.E. Engineering and Computer Science, Electrical Engineering and Computer Science Masters This record was generated from author submitted information. |
|
Subject(s): | BCN -- Thin films -- Inter layer dielectrics (ILD) -- low-k materials -- Electrical Characterization -- Metal-Insulator-Metal (MIM) | |
Persistent Link to This Record: | http://purl.flvc.org/ucf/fd/CFE0004912 | |
Restrictions on Access: | public 2013-08-15 | |
Host Institution: | UCF |