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The Impact of Growth Conditions on Cubic ZnMgO Ultraviolet Sensors

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Date Issued:
2013
Abstract/Description:
Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into the plasma. Material review includes the effect of changing conditions on the film's optical transmission, surface morphology, growth rate, crystalline phase, and stoichiometric composition. Oxygen plasma composition was investigated by spectroscopic analysis under varying oxygen flow rate and applied RF power and is correlated to device performance. Ni/Mg/Au interdigitated metal-semiconductor-metal detectors were formed to explore spectral responsivity and UV-Visible rejection ratio (RR). Zn1-xMgxO films ranged in Mg composition from x = 0.45 - 1.0. Generally, x increased with increasing substrate temperature and Mg source flux, and decreased with increasing oxygen flow rate and RF power. Increasing x was correlated with decreased peak responsivity intensity and increased RR. Device performance was improved by increasing the ratio of O to O+ atoms and minimizing O2+ in the plasma. Peak responsivity as high as 500 A/W was observed in visible-blind phase-segregated Zn1-xMgxO devices, while cubic phase solar-blind devices demonstrated peak responsivity as high as 12.6 mA/W, and RR of three orders of magnitude. Optimal conditions are predicted for the formation of DUV Zn1-xMgxO sensors.
Title: The Impact of Growth Conditions on Cubic ZnMgO Ultraviolet Sensors.
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Name(s): Boutwell, Ryan, Author
Schoenfeld, Winston, Committee Chair
Likamwa, Patrick, Committee Member
Kik, Pieter, Committee Member
Chernyak, Leonid, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2013
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into the plasma. Material review includes the effect of changing conditions on the film's optical transmission, surface morphology, growth rate, crystalline phase, and stoichiometric composition. Oxygen plasma composition was investigated by spectroscopic analysis under varying oxygen flow rate and applied RF power and is correlated to device performance. Ni/Mg/Au interdigitated metal-semiconductor-metal detectors were formed to explore spectral responsivity and UV-Visible rejection ratio (RR). Zn1-xMgxO films ranged in Mg composition from x = 0.45 - 1.0. Generally, x increased with increasing substrate temperature and Mg source flux, and decreased with increasing oxygen flow rate and RF power. Increasing x was correlated with decreased peak responsivity intensity and increased RR. Device performance was improved by increasing the ratio of O to O+ atoms and minimizing O2+ in the plasma. Peak responsivity as high as 500 A/W was observed in visible-blind phase-segregated Zn1-xMgxO devices, while cubic phase solar-blind devices demonstrated peak responsivity as high as 12.6 mA/W, and RR of three orders of magnitude. Optimal conditions are predicted for the formation of DUV Zn1-xMgxO sensors.
Identifier: CFE0005087 (IID), ucf:50735 (fedora)
Note(s): 2013-05-01
Ph.D.
Optics and Photonics, Optics and Photonics
Doctoral
This record was generated from author submitted information.
Subject(s): Oxide -- Semiconductor -- Thin films -- Optoelectronics -- Ultraviolet -- Sensor -- Detector -- Photonics
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0005087
Restrictions on Access: public 2013-11-15
Host Institution: UCF

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