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Semiconductor Device Modeling, Simulation, and Failure Prediction for Electrostatic Discharge Conditions
| Title: | Semiconductor Device Modeling, Simulation, and Failure Prediction for Electrostatic Discharge Conditions. |
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| Name(s): |
Li, Hang, Author Sundaram, Kalpathy, Committee Chair Batarseh, Issa, Committee Member Fan, Deliang, Committee Member Gong, Xun, Committee Member Salcedo, Javier, Committee Member University of Central Florida, Degree Grantor |
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| Type of Resource: | text | |
| Date Issued: | 2019 | |
| Publisher: | University of Central Florida | |
| Language(s): | English | |
| Abstract/Description: | Electrostatic Discharge (ESD) caused failures are major reliability issues in IC industry. Device modeling for ESD conditions is necessary to evaluate ESD robustness in simulation. Although SPICE model is accurate and efficient for circuit simulations in most cases, devices under ESD conditions operate in abnormal status. SPICE model cannot cover the device operating region beyond normal operation.Thermal failure is one of the main reasons to cause device failure under ESD conditions. A compact model is developed to predict thermal failure with circuit simulators. Instead of considering the detailed failure mechanisms, a failure temperature is introduced to indicate device failure. The developed model is implemented by a multiple-stage thermal network.P-N junction is the fundamental structure for ESD protection devices. An enhanced diode model is proposed and is used to simulate the device behaviors for ESD events. The model includes all physical effects for ESD conditions, which are voltage overshoot, self-heating effect, velocity saturation and thermal failure. The proposed model not only can fit the I-V and transient characteristics, but also can predict failure for different pulses.Safe Operating Area (SOA) is an important factor to evaluate the LDMOS performance. The transient SOA boundary is considered as power-defined. By placing the failure monitor under certain conditions, the developed modeling methodology can predict the boundary of transient SOA for any short pulse stress conditions. No matter failure happens before or after snapback phenomenon.Weibull distribution is popular to evaluate the dielectric lifetime for CVS. By using the transformative version of power law, the pulsing stresses are converted into CVS, and TDDB under ESD conditions for SiN MIMCAPs is analyzed. The thickness dependency and area independency of capacitor breakdown voltage is observed, which can be explained by the constant ?E model instead of conventional percolation model. | |
| Identifier: | CFE0007670 (IID), ucf:52512 (fedora) | |
| Note(s): |
2019-08-01 Ph.D. Engineering and Computer Science, Electrical and Computer Engineering Doctoral This record was generated from author submitted information. |
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| Subject(s): | ESD -- modeling -- thermal failure -- diode -- safe operating area -- LDMOS -- TDDB | |
| Persistent Link to This Record: | http://purl.flvc.org/ucf/fd/CFE0007670 | |
| Restrictions on Access: | public 2019-08-15 | |
| Host Institution: | UCF |
