You are here
Room Temperature Operation of Quantum Cascade Lasers Monolithically Integrated Onto a Lattice-Mismatched Substrate
- Date Issued:
- 2018
- Abstract/Description:
- The experimental results of a 40-stage indium phosphide (InP) based quantum cascade laser (QCL) grown on a lattice-mismatched gallium arsenide (GaAs) substrate with metamorphic buffer (M-buffer) will be discussed. The QCL's strain-balanced active region was composed of Al0.78In0.22As/In0.73Ga0.27As and an 8 (&)#181;m-thick all-InP waveguide. Since the M-buffer was insulating, the wafer was processed into ridge-waveguide chips with lateral current injection scheme. Laser chips with high reflection (HR) coating delivered total peak power in excess of 200 mW at cryogenic temperature (78 K), and lasing was observed up to 230 K. Partial HR coating was then utilized on the front facet to extend lasing range up to 303 K. After 200 minutes of preliminary reliability testing at maximum power, no sign of performance degradation was observed. Initial results of InP-based QCL on germanium-coated silicon substrate with M-buffer will also be covered in this work.
Title: | Room Temperature Operation of Quantum Cascade Lasers Monolithically Integrated Onto a Lattice-Mismatched Substrate. |
37 views
22 downloads |
---|---|---|
Name(s): |
Go, Rowel, Author Lyakh, Arkadiy, Committee Chair Delfyett, Peter, Committee Member Likamwa, Patrick, Committee Member Wu, Shintson, Committee Member University of Central Florida, Degree Grantor |
|
Type of Resource: | text | |
Date Issued: | 2018 | |
Publisher: | University of Central Florida | |
Language(s): | English | |
Abstract/Description: | The experimental results of a 40-stage indium phosphide (InP) based quantum cascade laser (QCL) grown on a lattice-mismatched gallium arsenide (GaAs) substrate with metamorphic buffer (M-buffer) will be discussed. The QCL's strain-balanced active region was composed of Al0.78In0.22As/In0.73Ga0.27As and an 8 (&)#181;m-thick all-InP waveguide. Since the M-buffer was insulating, the wafer was processed into ridge-waveguide chips with lateral current injection scheme. Laser chips with high reflection (HR) coating delivered total peak power in excess of 200 mW at cryogenic temperature (78 K), and lasing was observed up to 230 K. Partial HR coating was then utilized on the front facet to extend lasing range up to 303 K. After 200 minutes of preliminary reliability testing at maximum power, no sign of performance degradation was observed. Initial results of InP-based QCL on germanium-coated silicon substrate with M-buffer will also be covered in this work. | |
Identifier: | CFE0007568 (IID), ucf:52564 (fedora) | |
Note(s): |
2018-08-01 M.S. Optics and Photonics, Optics and Photonics Masters This record was generated from author submitted information. |
|
Subject(s): | Quantum Cascade Laser -- Monolithically Integrated -- Lattice Mismatched -- Silicon -- Gallium Arsenide -- Indium Phosphide | |
Persistent Link to This Record: | http://purl.flvc.org/ucf/fd/CFE0007568 | |
Restrictions on Access: | campus 2020-02-15 | |
Host Institution: | UCF |