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- Title
- MONOLITHICALLY INTEGRATED WAVELENGTH TUNABLE LASER DIODE FOR INTEGRATED OPTIC SURFACE PLASMON RESONANCE SENSING.
- Creator
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Tabbakh, Thamer, Likamwa, Patrick, Batarseh, Issa, Fathpour, Sasan, Mikhael, Wasfy, Khajavikhan, Mercedeh, University of Central Florida
- Abstract / Description
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In this work, we demonstrate an InGaAsP multiple quantum well tunable laser diode that amalgamates two gain sections with different bandgap energies. This is achieved using selective area intermixing of the multiple quantum wells, and impurity-free vacancy induced disordering. When different current combination is injected into each section, that leads to a laser wavelength peak whose position depends on the relative magnitudes of the two injected currents. The laser wavelength can be fine...
Show moreIn this work, we demonstrate an InGaAsP multiple quantum well tunable laser diode that amalgamates two gain sections with different bandgap energies. This is achieved using selective area intermixing of the multiple quantum wells, and impurity-free vacancy induced disordering. When different current combination is injected into each section, that leads to a laser wavelength peak whose position depends on the relative magnitudes of the two injected currents. The laser wavelength can be fine-tuned from 1538 nm to 1578 nm with relatively constant output power. The free spectral range FSR of the tunable laser found to be 0.25 nm. This tunable laser was launched into an optical surface plasmon resonance sensor head to provide an input light source for the SPR sensor.Using the tunable laser diode, we have demonstrated an optical surface plasmon resonance sensor head that is based on an inverted rib dielectric waveguide, in which the resonance wavelength of the surface plasmon excited at the gold metal-dielectric interface depends on the refractive index of the liquid in contact with it. The inverted-rib waveguide of the SPR sensor head is made of a layer of SU-8 polymer with a refractive index of 1.568. While the lower cladding layer consists of silicon oxynitride (SiOxNy) with a refractive index of 1.526. The top surface is coated with 20 nm of chromium followed by a 50 nm thick layer of gold or with 4 nm of titanium followed by a 25 nm thick layer of gold. The SPR sensor head was designed, to allow monitoring of analyte media with a refractive index, ranging from 1.43 to the 1.52. Using a set of reference liquids representing the analyte medium, the sensitivity of the SPR sensor was measured using the fabricated tunable laser, an optical spectrum analyzer, and a photodiode. It was found that with various calibrated sample liquids in contact with the gold metal, a sharp resonance dip in the transmission spectrum occurred, and its position shifted to a shorter wavelength when the refractive index of the sample liquids was increased. The average sensitivity of the SPR sensor devices was determined to be S = 334 nm/RIU.
Show less - Date Issued
- 2018
- Identifier
- CFE0007769, ucf:52390
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007769
- Title
- INTEGRATED INP PHOTONIC SWITCHES.
- Creator
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May-Arrioja, Daniel, LiKamWa, Patrick, University of Central Florida
- Abstract / Description
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Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and...
Show morePhotonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.
Show less - Date Issued
- 2006
- Identifier
- CFE0001368, ucf:47007
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001368
