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(1 - 4 of 4)
- Title
- EFFECT OF ANNEALING ON COPPER THIN FILMS:THE CLASSICAL SIZE EFFECT AND AGGLOMERATION.
- Creator
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Gadkari, Parag, Sundaram, Kalpathy, University of Central Florida
- Abstract / Description
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With continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising...
Show moreWith continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising from surface and grain boundaries. The total resistivity of metals depends on the electron scattering due to impurities, phonons, surfaces, grain boundaries, and other crystal defects. Managing the size effect in a practical and manufacturing way is of major concern to the microelectronics industry. Since each of the processes (phonon, surface and grain boundary scattering) adds to the resistivity and are interrelated, it further complicates managing the size effect. However, these effects have been separately studied. In this work, the effect of annealing on the classical size effect in Cu thin films deposited on SiO2 substrate is investigated. Polycrystalline Cu thin films having thicknesses in the range of 10nm to 200nm were ultra high vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. The un-annealed Cu thin films exhibit higher resistivity than the annealed films. The resistivities of un-annealed films were in good agreement with Mayadas and Shatzkes model. When annealed the films undergoes grain growth resulting in lowering the resistivities by about 20%-30% thereby confirming the role of grain size on resistivity of the film. However, there is a limit to annealing, i.e. agglomeration phenomenon. Agglomeration is a thermally activated process resulting in a reduction of the free energy of the film–substrate system and can occur well below the melting point of the material by surface and interfacial diffusion. The reduction of film-substrate interfacial energy, film-surface interfacial energy and stresses within the film are possible driving forces for agglomeration. This work also includes the study of agglomeration phenomenon. The agglomeration behavior of Cu is investigated and compared with that of Ru, Au and Pt thin films with thicknesses in the range of 10 nm to 100 nm UHV deposited on thermally grown SiO2 substrate. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play important part in deciding the mode of void growth in Au and Pt thin films. Lastly, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer, which in turn improves the resistivity of the thin film due to prolonged grain growth without film breakup.
Show less - Date Issued
- 2005
- Identifier
- CFE0000496, ucf:46363
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0000496
- Title
- INVESTIGATION OF NANOCERIA-MODIFIED PLATINUM-GOLD COMPOSITE ELECTRODES FOR THE ELECTROCHEMICAL REDUCTION OF OXYGEN IN ALKALINE MEDIA.
- Creator
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Hegishte, Rahul, Diaz, Diego, University of Central Florida
- Abstract / Description
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Platinum-gold and nanoceria-modified platinum-gold electrodes were prepared on a platinum surface via electrochemical reduction of solutions of platinum and gold salts in the dispersion of nanoceria. The molar ratios of Pt and Au were varied in both PtAu and PtAu/CeO2 electrodes while the total concentration of the metals was maintained at 2 x 10-3M and the concentration of nanoceria was maintained constant at 5 x 10-3M. The electrodes were characterized by their cyclic voltammetry curves in...
Show morePlatinum-gold and nanoceria-modified platinum-gold electrodes were prepared on a platinum surface via electrochemical reduction of solutions of platinum and gold salts in the dispersion of nanoceria. The molar ratios of Pt and Au were varied in both PtAu and PtAu/CeO2 electrodes while the total concentration of the metals was maintained at 2 x 10-3M and the concentration of nanoceria was maintained constant at 5 x 10-3M. The electrodes were characterized by their cyclic voltammetry curves in 0.5M sulfuric acid solution. The electrochemically active area of the electrodes was determined using the copper underpotential deposition method. The linear sweep voltammograms of the PtAu and PtAu/CeO2 electrodes were plotted from -1V to 0V vs. Ag/AgCl, 3M KCl reference electrode using the rotating disk electrodes for the rotation speeds from 200 to 3600rpm in an oxygen saturated 0.1M sodium hydroxide solution. The values of the kinetic controlled current density were determined from the rotating disk voltammetry. The values of the limiting current density for each rotation speed were used to plot the Koutecky-Levich plots for the electrodes. The rate constants were obtained from the Koutecky-Levich plots for each composition of the electrode. The values of kinetic current density and the rate constants indicated that the addition of Au enhances the ORR rates in both the PtAu and the PtAu/CeO2 electrodes. The values of the kinetic current densities of the PtAu/CeO2 were lower than that of the PtAu electrodes owing to the poor electrical conductivity of ceria. The Koutecky-Levich plots for the PtAu and the PtAu/CeO2 electrodes are linear for the four-electron reduction of oxygen in the alkaline media, which indicates that the overall reaction follows the first order kinetics. The electron transfer rate constants obtained from the Koutecky-Levich plots for the PtAu and the PtAu/CeO2 electrodes both were found to increase in values with the addition of Au. The Tafel plots were plotted for the PtAu and PtAu/CeO2 electrodes and the values of Tafel slopes were found to be in a small range for lower amounts of Au which indicated that the ORR rates were enhanced in lower amounts of Au. The values of Tafel slopes were found to be much higher for the ceria-modified PtAu electrodes as compared to the PtAu electrodes, which indicate the lower rates of ORR after the modification with ceria. Also, the ORR rates for the electrodes with smaller amounts of Au in PtAu/CeO2 were higher than those in the larger amounts of Au.
Show less - Date Issued
- 2011
- Identifier
- CFE0003639, ucf:48860
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003639
- Title
- Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices.
- Creator
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Grummel, Brian, Shen, Zheng, Sundaram, Kalpathy, Yuan, Jiann-Shiun, University of Central Florida
- Abstract / Description
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Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor...
Show moreAdvances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) die-attach has shown in literature to be a promising bonding technique for this packaging need. In this work TLP has been comprehensively investigated and characterized to assess its viability for high-temperature power electronics applications. The reliability and durability of TLP die-attach was extensively investigated utilizing electrical resistivity measurement as an indicator of material diffusion in gold-indium TLP samples. Criteria of ensuring diffusive stability were also developed. Samples were fabricated by material deposition on glass substrates with variant Au(-)In compositions but identical barrier layers. They were stressed with thermal cycling to simulate their operating conditions then characterized and compared. Excess indium content in the die-attach was shown to have poor reliability due to material diffusion through barrier layers while samples containing suitable indium content proved reliable throughout the thermal cycling process. This was confirmed by electrical resistivity measurement, EDS, FIB, and SEM characterization. Thermal and mechanical characterization of TLP die-attached samples was also performed to gain a newfound understanding of the relationship between TLP design parameters and die-attach properties. Samples with a SiC diode chip TLP bonded to a copper metalized silicon nitride substrate were made using several different values of fabrication parameters such as gold and indium thickness, Au(-)In ratio, and bonding pressure. The TLP bonds were then characterized for die-attach voiding, shear strength, and thermal impedance. It was found that TLP die-attach offers high average shear force strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction to the substrate. The influence of various fabrication parameters on the bond characteristics were also compared, providing information necessary for implementing TLP die-attach into power electronic modules for high-temperature applications. The outcome of the investigation on TLP bonding techniques was incorporated into a new power module design utilizing TLP bonding. A full half-bridge inverter power module for low-power space applications has been designed and analyzed with extensive finite element thermo-mechanical modeling. In summary, TLP die-attach has investigated to confirm its reliability and to understand how to design effective TLP bonds, this information has been used to design a new high-temperature power electronic module.
Show less - Date Issued
- 2012
- Identifier
- CFE0004499, ucf:49276
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004499
- Title
- Structure, stability, vibrational, thermodynamic, and catalytic properties of metal nanostructures: size, shape, support, and adsorbate effects.
- Creator
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Behafarid, Farzad, Roldan Cuenya, Beatriz, Chow, Lee, Heinrich, Helge, Kara, Abdelkader, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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Recent advances in nanoscience and nanotechnology have provided the scientific community with exciting new opportunities to rationally design and fabricate materials at the nanometer scale with drastically different properties as compared to their bulk counterparts. In this dissertation, several challenges have been tackled in aspects related to nanoparticle (NP) synthesis and characterization, allowing us to make homogenous, size- and shape-selected NPs via the use of colloidal chemistry,...
Show moreRecent advances in nanoscience and nanotechnology have provided the scientific community with exciting new opportunities to rationally design and fabricate materials at the nanometer scale with drastically different properties as compared to their bulk counterparts. In this dissertation, several challenges have been tackled in aspects related to nanoparticle (NP) synthesis and characterization, allowing us to make homogenous, size- and shape-selected NPs via the use of colloidal chemistry, and to gain in depth understanding of their distinct physical and chemical properties via the synergistic use of a variety of ex situ, in situ, and operando experimental tools. A variety of phenomena relevant to nanosized materials were investigated, including the role of the NP size and shape in the thermodynamic and electronic properties of NPs, their thermal stability, NP-support interactions, coarsening phenomena, and the evolution of the NP structure and chemical state under different environments and reaction conditions.
Show less - Date Issued
- 2012
- Identifier
- CFE0004779, ucf:49796
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004779
