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- Title
- Chemistry and(&)nbsp;Structure of Ru/SiO2(&)nbsp;and Ru/Al2O3 Interfaces.
- Creator
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Ezzat, Sameer, Campiglia, Andres, Coffey, Kevin, Zou, Shengli, Frazer, Andrew, Harper, James, Coffey, Kevin, University of Central Florida
- Abstract / Description
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The resistivity size effect in nanoscale metals is of both scientific and technological interest, the latter due to its importance to interconnects between transistors in integrated circuits. In this work we report the variation of resistivity associated with surface scattering of ex-situ annealed single crystal Ru thin films grown on sapphire substrates by sputter deposition. A set of samples were overcoated with dielectric and subjected to a variety of reducing and oxidizing anneals. The...
Show moreThe resistivity size effect in nanoscale metals is of both scientific and technological interest, the latter due to its importance to interconnects between transistors in integrated circuits. In this work we report the variation of resistivity associated with surface scattering of ex-situ annealed single crystal Ru thin films grown on sapphire substrates by sputter deposition. A set of samples were overcoated with dielectric and subjected to a variety of reducing and oxidizing anneals. The changes in the chemistry and structure of the dielectric interface induced by the anneals, as determined by x-ray reflectivity and x-ray photoelectron spectroscopy measurements, are related to the changes in the specularity of the surface for electron scattering in the context of the Fuchs-Sondheimer semi-classical model of the resistivity size effect.
Show less - Date Issued
- 2019
- Identifier
- CFE0007454, ucf:52727
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007454
- Title
- EFFECT OF ANNEALING ON COPPER THIN FILMS:THE CLASSICAL SIZE EFFECT AND AGGLOMERATION.
- Creator
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Gadkari, Parag, Sundaram, Kalpathy, University of Central Florida
- Abstract / Description
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With continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising...
Show moreWith continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising from surface and grain boundaries. The total resistivity of metals depends on the electron scattering due to impurities, phonons, surfaces, grain boundaries, and other crystal defects. Managing the size effect in a practical and manufacturing way is of major concern to the microelectronics industry. Since each of the processes (phonon, surface and grain boundary scattering) adds to the resistivity and are interrelated, it further complicates managing the size effect. However, these effects have been separately studied. In this work, the effect of annealing on the classical size effect in Cu thin films deposited on SiO2 substrate is investigated. Polycrystalline Cu thin films having thicknesses in the range of 10nm to 200nm were ultra high vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. The un-annealed Cu thin films exhibit higher resistivity than the annealed films. The resistivities of un-annealed films were in good agreement with Mayadas and Shatzkes model. When annealed the films undergoes grain growth resulting in lowering the resistivities by about 20%-30% thereby confirming the role of grain size on resistivity of the film. However, there is a limit to annealing, i.e. agglomeration phenomenon. Agglomeration is a thermally activated process resulting in a reduction of the free energy of the film–substrate system and can occur well below the melting point of the material by surface and interfacial diffusion. The reduction of film-substrate interfacial energy, film-surface interfacial energy and stresses within the film are possible driving forces for agglomeration. This work also includes the study of agglomeration phenomenon. The agglomeration behavior of Cu is investigated and compared with that of Ru, Au and Pt thin films with thicknesses in the range of 10 nm to 100 nm UHV deposited on thermally grown SiO2 substrate. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play important part in deciding the mode of void growth in Au and Pt thin films. Lastly, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer, which in turn improves the resistivity of the thin film due to prolonged grain growth without film breakup.
Show less - Date Issued
- 2005
- Identifier
- CFE0000496, ucf:46363
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0000496
- Title
- X-ray Scattering Investigations of Metallic Thin Films.
- Creator
-
Warren, Andrew, Coffey, Kevin, Sohn, Yongho, Suryanarayana, Challapalli, Heinrich, Helge, Barmak, Katayun, Toney, Michael, University of Central Florida
- Abstract / Description
-
Nanometric thin films are used widely throughout various industries and for various applications. Metallic thin films, specifically, are relied upon extensively in the microelectronics industry, among others. For example, alloy thin films are being investigated for CMOS applications, tungsten films find uses as contacts and diffusion barriers, and copper is used often as interconnect material. Appropriate metrology methods must therefore be used to characterize the physical properties of...
Show moreNanometric thin films are used widely throughout various industries and for various applications. Metallic thin films, specifically, are relied upon extensively in the microelectronics industry, among others. For example, alloy thin films are being investigated for CMOS applications, tungsten films find uses as contacts and diffusion barriers, and copper is used often as interconnect material. Appropriate metrology methods must therefore be used to characterize the physical properties of these films. X-ray scattering experiments are well suited for the investigation of nano-scaled systems, and are the focus of this doctoral dissertation. Emphasis is placed on (1) phase identification of polycrystalline thin films, (2) the evaluation of the grain size and microstrain of metallic thin films by line profile analysis, and (3) the study of morphological evolution in solid/solid interfaces.To illustrate the continued relevance of x-ray diffraction for phase identification of simple binary alloy systems, Pt-Ru thin films, spanning the compositional range from pure Pt to pure Ru were investigated. In these experiments, a meta-stable extension of the HCP phase is observed in which the steepest change in the electronic work function coincides with a rapid change in the c/a ratio of the HCP phase.For grain size and microstrain analysis, established line profile methods are discussed in terms of Cu and W thin film analysis. Grain sizes obtained by x-ray diffraction are compared to transmission electron microscopy based analyses. Significant discrepancies between x-ray and electron microscopy are attributed to sub-grain misorientations arising from dislocation core spreading at the film/substrate interface. A novel "residual" full width half max parameter is introduced for examining the contribution of strain to x-ray peak broadening. The residual width is subsequently used to propose an empirical method of line profile analysis for thin films on substrates.X-ray reflectivity was used to study the evolution of interface roughness with annealing for a series of Cu thin films that were encapsulated in both SiO2 and Ta/SiO2. While all samples follow similar growth dynamics, notable differences in the roughness evolution with high temperature ex-situ annealing were observed. The annealing resulted in a smoothing of only one interface for the SiO2 encapsulated films, while neither interface of the Ta/SiO2 encapsulated films evolved significantly. The fact that only the upper Cu/SiO2 interface evolves is attributed to mechanical pinning of the lower interface to the rigid substrate. The lack of evolution of the Cu/Ta/SiO2 interface is consistent with the lower diffusivity expected of Cu in a Cu/Ta interface as compared to that in a Cu/SiO2 interface. The smoothing of the upper Cu/SiO2 interface qualitatively follows that expected for capillarity driven surface diffusion but with notable quantitative deviation.
Show less - Date Issued
- 2013
- Identifier
- CFE0004770, ucf:49784
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004770
