View All Items

Title: EFFECTS OF DEPOSITION TEMPERATURE AND POST DEPOSITION ANNEALING ON THE ELECTRICAL PROPERTIES OF BARIUM STRONTIUM TITANATE THIN FILM FOR EMBEDDED CAPACITOR APPLICATIONS.
Creator: Peelamedu Ranganathan, Raviprakash, Kalpathy. B, Sundaram, University of Central Florida
Abstract / Description: A higher degree of system level integration can be achieved by integrating the passive components into semiconductor devices, which seem to be an enabling technology for portable communication and modern electronic devices. Greater functionality, higher performance and increase in reliability can be achieved by miniaturizing and reducing the number of components in integrated circuits. The functional potential of small electronic devices can be enormously increased by implementing the...
Show moreA higher degree of system level integration can be achieved by integrating the passive components into semiconductor devices, which seem to be an enabling technology for portable communication and modern electronic devices. Greater functionality, higher performance and increase in reliability can be achieved by miniaturizing and reducing the number of components in integrated circuits. The functional potential of small electronic devices can be enormously increased by implementing the embedded capacitors, resistors and inductors. This would free up surface real estate allowing either a smaller footprint or more silicon devices to be placed on the same sized substrate. This thesis focuses on the effect of deposition temperature and post deposition annealing (PDA) in different gas ambient on the electrical properties of sputter deposited ferroelectric Barium Strontium Titanate (Ba0.5St0.5) TiO3 thin film capacitors. Approximately 2000Å of Barium Strontium Titanate (BST) thin film was deposited at different substrate temperatures (400,450,500 and 550◦C) on cleaned silicon substrates. These BST films were then annealed separately in 100% N2, 100% O2 and 10% O2 + 90% N2 at 575◦C in sputtering machine (PVD anneal) and a three zone annealing Lindberg furnace. The objective of this thesis was to compare the effect of PDA on the electrical properties of BST films deposited at different substrate temperatures between PVD annealing and furnace annealing. For this work, tantalum thin film was used as top and bottom electrode to fabricate the capacitors. BST thin film capacitors were fabricated and characterized for leakage current and dielectric breakdown. Roughness study on pre and post annealed BST films were done using optical profilometer. The capacitors were tested using HP impedance analyzer in the frequency range from 10Hz through 1 MHz. From the experiments, 100% O2 annealed furnace annealed BST thin film seem to have better dielectric constant, higher breakdown voltage and nominal capacitance density.
Show less
Date Issued: 2004
Identifier: CFE0000314, ucf:46310
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000314

Title: GRATING COUPLER FOR SURFACE WAVES BASED ON ELECTRICAL DISPLACEMENT CURRENTS.
Creator: Brescia, Jonathan R, Peale, Robert, University of Central Florida
Abstract / Description: Bound electromagnetic surface waves can be excited by free-space waves on a corrugated conduction surface. These electromagnetic surface waves, called surface plasmon polaritons (SPPs), are coupled to a plasma of free charges, which travel together with the wave. We investigated the effect of separating metal corrugations from the smooth metal ground plane with a thin dielectric layer and show that SPPs can be excited via displacement currents. However, the SPP excitation resonances broaden...
Show moreBound electromagnetic surface waves can be excited by free-space waves on a corrugated conduction surface. These electromagnetic surface waves, called surface plasmon polaritons (SPPs), are coupled to a plasma of free charges, which travel together with the wave. We investigated the effect of separating metal corrugations from the smooth metal ground plane with a thin dielectric layer and show that SPPs can be excited via displacement currents. However, the SPP excitation resonances broaden and disappear as the dielectric thickness approaches 1% of the wavelength.
Show less
Date Issued: 2019
Identifier: CFH2000457, ucf:45898
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFH2000457

Title: INVESTIGATION OF HIGH-K GATE DIELECTRICS AND METALS FOR MOSFET DEVICES.
Creator: Seshadri, Sriram, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: Progress in advanced microlithography and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS devices. This thesis gives an in-depth study of threshold voltages of PMOS and NMOS...
Show moreProgress in advanced microlithography and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS devices. This thesis gives an in-depth study of threshold voltages of PMOS and NMOS transistors using various high-k dielectric materials like Tantalum pent oxide (Ta2O5), Hafnium oxide (HfO2), Zirconium oxide (ZrO2) and Aluminum oxide (Al2O3) gate oxides. Higher dielectric constant may lead to high oxide capacitance (Cox), which affects the threshold voltage (VT) of the device. The working potential of MOS devices can be increased by high dielectric gate oxide and work function of gate metal which may also influence the threshold voltage (VT). High dielectric materials have low gate leakage current, high breakdown voltage and are thermally stable on Silicon Substrate (Si). Different kinds of deposition techniques for different gate oxides, gate metals and stability over silicon substrates are analyzed theoretically. The impact of the properties of gate oxides such as oxide thickness, interface trap charges, doping concentration on threshold voltage were simulated, plotted and studied. This study involved comparisons of oxides-oxides, metals-metals, and metals-oxides. Gate metals and alloys with work function of less than 5eV would be suitable candidates for aluminum oxide, hafnium oxide etc. based MOSFETs.
Show less
Date Issued: 2005
Identifier: CFE0000667, ucf:46549
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000667

Title: Investigation of different dielectric materials as gate insulator for MOSFETs.
Creator: Oswal, Ritika, Sundaram, Kalpathy, Kapoor, Vikram, Wahid, Parveen, University of Central Florida
Abstract / Description: The scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the silicon dioxide layer is reduced to increase the gate capacitance, thus increasing the drain current. If the thickness of the gate dielectric decreases below 2nm, the leakage current due to the tunneling increases drastically. Hence it is necessary to replace the gate dielectric, silicon dioxide, with a physically thicker oxide layer of high-k...
Show moreThe scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the silicon dioxide layer is reduced to increase the gate capacitance, thus increasing the drain current. If the thickness of the gate dielectric decreases below 2nm, the leakage current due to the tunneling increases drastically. Hence it is necessary to replace the gate dielectric, silicon dioxide, with a physically thicker oxide layer of high-k materials like Hafnium oxide and Titanium oxide. High-k dielectric materials allow the capacitance to increase without a huge leakage current. Hafnium oxide and Titanium oxide films are deposited by reactive magnetron sputtering from Hafnium and Titanium targets respectively. These oxide layers are used to create metal-insulator-metal (MIM) structures using aluminum as the top and bottom electrodes. The films are deposited at various O2/Ar gas flow ratios, substrate temperatures, and process pressures. After attaining an exact recipe for these oxide layers that exhibit the desired parameters, MOS capacitors are fabricated with n-Si and p-Si substrates having aluminum electrodes at the top and bottom of each. Comparing the parameters of Hafnium oxide- and Titanium oxide- based MOS capacitors, MOSFET devices are designed with Hafnium oxide as gate dielectric.
Show less
Date Issued: 2014
Identifier: CFE0005226, ucf:50612
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005226

Title: CIRCUIT DESIGN AND RELIABILITY OF A CMOS RECEIVER.
Creator: Yang, Hong, Yuan, Jiann, University of Central Florida
Abstract / Description: This dissertation explores CMOS RF design and reliability for portable wireless receivers. The objective behind this research is to achieve an increase in integration level, and gain more understanding for RF reliability. The fields covered include device, circuit and system. What is under investigation is a multi-band multi-mode receiver with GSM, DCS-1800 and CDMA compatibility. To my understanding, GSM and CDMA dual-mode mobile phones are progressively investigated in industries, and few...
Show moreThis dissertation explores CMOS RF design and reliability for portable wireless receivers. The objective behind this research is to achieve an increase in integration level, and gain more understanding for RF reliability. The fields covered include device, circuit and system. What is under investigation is a multi-band multi-mode receiver with GSM, DCS-1800 and CDMA compatibility. To my understanding, GSM and CDMA dual-mode mobile phones are progressively investigated in industries, and few commercial products are available. The receiver adopts direct conversion architecture. Some improved circuit design methods are proposed, for example, for low noise amplifier (LNA). Except for band filters, local oscillators, and analog-digital converters which are usually implemented by COTS SAW filters and ICs, all the remaining blocks such as switch, LNA, mixer, and local oscillator are designed in MOSIS TSMC 0.35ìm technology in one chip. Meanwhile, this work discusses related circuit reliability issues, which are gaining more and more attention. Breakdown (BD) and hot carrier (HC) effects are important issues in semiconductor industry. Soft-breakdown (SBD) and HC effects on device and RF performance has been reported. Hard-breakdown (HBD) effects on digital circuits have also been investigated. This work uniquely address HBD effects on the RF device and circuit performance, taking low noise amplifier and power amplifier as targets.
Show less
Date Issued: 2004
Identifier: CFE0000212, ucf:46259
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000212

Title: ALUMINA-ALUMINUM TITANATE-TITANIA NANOCOMPOSITE: SYNTHESIS, SINTERING STUDIES, ASSESSMENT OF BIOACTIVITY AND ITS MECHANICAL AND ELECTRICAL PROPERTIES.
Creator: Somani, Vikas, Kalita, Samar, University of Central Florida
Abstract / Description: This thesis reports the development, synthesis and characterization of a ceramic-ceramic nanocomposite system for its possible application as structural and electronic biomaterial in the biomedical industry. The study selected and synthesized alumina-aluminum titanate-titania (Al2O3-Al2TiO5-TiO2) nanoceramic composite using a simple Sol-Gel technique, which can be easily reproduced. Aluminum propoxide and titanium propoxide were used as precursor chemicals. Propanol and 2- methoxy ethanol...
Show moreThis thesis reports the development, synthesis and characterization of a ceramic-ceramic nanocomposite system for its possible application as structural and electronic biomaterial in the biomedical industry. The study selected and synthesized alumina-aluminum titanate-titania (Al2O3-Al2TiO5-TiO2) nanoceramic composite using a simple Sol-Gel technique, which can be easily reproduced. Aluminum propoxide and titanium propoxide were used as precursor chemicals. Propanol and 2- methoxy ethanol were used as solvent and stabilizer, respectively. Thermal analyses were performed for a systematic understanding of phase evolution from the synthesized gel. X-Ray diffraction technique was used to confirm the phase evolution, phase purity, crystallite size and crystal structure(s) of the phase(s). Calcination of the powder at low temperatures (700°C) leads to formation of Al2O3-TiO2 nanocomposite and at higher temperatures into Al2O3-Al2TiO5-TiO2 nanocomposite confirmed by XRD analysis. Electron microscopic techniques were used to investigate powder morphology, crystallite size and inter-planner spacing. High Resolution Transmission Electron Microscopy images of the calcined powder showed agglomerates of powder particles with particle size in 15-20 nm range. As-synthesized powder was uniaxially pressed into cylindrical pellets and sintered at elevated temperatures (1000-1400oC) to study the sintering behavior, densification characteristics, and measurement of mechanical and electrical properties and assessment of bioactivity. Phase transformation induced by the sintering process was analyzed by X-ray powder diffraction technique. The effects of nanosize of powder particles and multi-phases on densification, and mechanical and electrical properties were investigated. Vickers hardness and biaxial flexural strength tests were used to determine mechanical properties. Bioactivity of the nanocomposite was assessed in Simulated Body Fluid (SBF), which has the same ionic concentration as that of human plasma. Effects of biodegradation and change in mechanical properties of the composite when kept in SBF and maintained in a static condition were studied in terms of weight loss, change in the pH of the acellular solution and change in mechanical properties (hardness and biaxial strength). Scanning Electron Microscopy was used to observe the formation of apatite crystals on the surface of the nanocomposite specimens soaked in SBF. The results obtained throw light on biocompatibility and bioactivity of Al2TiO5 phase, which has not been reported so far in the literature to the best of our knowledge. Dielectric constant and dissipation factor of the sintered nanocomposite pellets were measured using HP 4284A impedance-capacitance-resistance meter and 16451 B dielectric test fixture at 1 MHz frequency. The effects of sintering time, temperature and phases present on the electrical properties were studied and are reported in the thesis.
Show less
Date Issued: 2006
Identifier: CFE0001092, ucf:46775
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001092

Title: Ultrafast Laser Material Processing For Photonic Applications.
Creator: Ramme, Mark, Richardson, Martin, Fathpour, Sasan, Sundaram, Kalpathy, Kar, Aravinda, University of Central Florida
Abstract / Description: Femtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of...
Show moreFemtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of this technique for introducing photonic structures into novel dielectric materials. Additionally, this work provides a deeper understanding of the light-matter interaction mechanism occurring at high pulse repetition rates. A novel structure on the sample surface in the form of nano-fibers was observed when the bulk material was irradiated with high repetition rate pulse trains.To utilize the advantages of the FLDW technique even further, a transfer of the technology from dielectric to semiconductor materials is investigated. However, this demands detailed insight of the absorption and modification processes themselves. Experiments and the results suggested that non-linear absorption, specifically avalanche ionization, is the limiting factor inhibiting the application of FLDW to bulk semiconductors with today's laser sources.
Show less
Date Issued: 2013
Identifier: CFE0004914, ucf:49626
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004914

Title: High-efficiency Blue Phase Liquid Crystal Displays.
Creator: Li, Yan, Wu, Shintson, Saleh, Bahaa, Zeldovich, Boris, Wu, Xinzhang, University of Central Florida
Abstract / Description: Blue phase liquid crystals (BPLCs) have a delicate lattice structure existing between chiral nematic and isotropic phases, with a stable temperature range of about 2 K. But due to short coherent length, these self-assembled nano-structured BPLCs have a fast response time. In the past three decades, the application of BPLC has been rather limited because of its narrow temperature range. In 2002, Kikuchi et al. developed a polymer stabilization method to extend the blue-phase temperature range...
Show moreBlue phase liquid crystals (BPLCs) have a delicate lattice structure existing between chiral nematic and isotropic phases, with a stable temperature range of about 2 K. But due to short coherent length, these self-assembled nano-structured BPLCs have a fast response time. In the past three decades, the application of BPLC has been rather limited because of its narrow temperature range. In 2002, Kikuchi et al. developed a polymer stabilization method to extend the blue-phase temperature range to more than 60 K. This opens a new gateway for display and photonic applications.In this dissertation, I investigate the material properties of polymer-stabilized BPLCs. According the Gerber's model, the Kerr constant of a BPLC is linearly proportional to the dielectric anisotropy of the LC host. Therefore, in the frequency domain, the relaxation of the Kerr constant follows the same trend as the dielectric relaxation of the host LC. I have carried out experiments to validate the theoretical predictions, and proposed a model called extended Cole-Cole model to describe the relaxation of the Kerr constant. On the other hand, because of the linear relationship, the Kerr constant should have the same sign as the dielectric anisotropy of the LC host; that is, a positive or negative Kerr constant results from positive or negative host LCs, respectively. BPLCs with a positive Kerr constant have been studied extensively, but there has been no study on negative polymer-stabilized BPLCs. Therefore, I have prepared a BPLC mixture using a negative dielectric anisotropy LC host and investigated its electro-optic properties. I have demonstrated that indeed the induced birefringence and Kerr constant are of negative sign. Due to the fast response time of BPLCs, color sequential display is made possible without color breakup. By removing the spatial color filters, the optical efficiency and resolution density are both tripled. With other advantages such as alignment free and wide viewing angle, polymer-stabilized BPLC is emerging as a promising candidate for next-generation displays.However, the optical efficiency of the BPLC cell is relatively low and the operating voltage is quite high using conventional in-plane-switching electrodes. I have proposed several device structures for improving the optical efficiency of transmissive BPLC cells. Significant improvement in transmittance is achieved by using enhanced protrusion electrodes, and a 100% transmittance is achievable using complementary enhanced protrusion electrode structure.For a conventional transmissive blue phase LCD, although it has superb performances indoor, when exposed to strong sunlight the displayed images could be washed out, leading to a degraded contrast ratio and readability. To overcome the sunlight readability problem, a common approach is to adaptively boost the backlight intensity, but the tradeoff is in the increased power consumption. Here, I have proposed a transflective blue phase LCD where the backlight is turned on in dark surroundings while ambient light is used to illuminate the displayed images in bright surroundings. Therefore, a good contrast ratio is preserved even for a strong ambient. I have proposed two transflective blue phase LCD structures, both of which have single cell gap, single gamma driving, reasonably wide view angle, low power consumption, and high optical efficiency. Among all the 3D technologies, integral imaging is an attractive approach due to its high efficiency and real image depth. However, the optimum observation distance should be adjusted as the displayed image depth changes. This requires a fast focal length change of an adaptive lens array. BPLC adaptive lenses are a good candidate because of their intrinsic fast response time. I have proposed several BPLC lens structures which are polarization independent and exhibit a parabolic phase profile in addition to fast response time.To meet the low power consumption requirement set by Energy Star, high optical efficiency is among the top lists of next-generation LCDs. In this dissertation, I have demonstrated some new device structures for improving the optical efficiency of a polymer-stabilized BPLC transmissive display and proposed sunlight readable transflective blue-phase LCDs by utilizing ambient light to reduce the power consumption. Moreover, we have proposed several blue-phase LC adaptive lenses for high efficiency 3D displays.
Show less
Date Issued: 2012
Identifier: CFE0004787, ucf:49725
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004787

Title: A LOW PHASE NOISE K-BAND OSCILLATOR UTILIZING AN EMBEDDED DIELECTRIC RESONATOR ON MULTILAYER HIGH FREQUENCY LAMINATES.
Creator: Subramanian, Ajay, Gong, Xun, University of Central Florida
Abstract / Description: K-Band (18 to 26 GHz) dielectric resonator oscillators are typically used as a local oscillator in most K-Band digital transmitter/receiver topologies. Traditionally, the oscillator itself is made up of an active device, a dielectric resonator termination network, and a passive load matching network. The termination network embodies a cylindrical high permittivity dielectric resonator that is coupled on the same plane as a current carrying transmission line. This configuration provides an...
Show moreK-Band (18 to 26 GHz) dielectric resonator oscillators are typically used as a local oscillator in most K-Band digital transmitter/receiver topologies. Traditionally, the oscillator itself is made up of an active device, a dielectric resonator termination network, and a passive load matching network. The termination network embodies a cylindrical high permittivity dielectric resonator that is coupled on the same plane as a current carrying transmission line. This configuration provides an adequate resonance needed for oscillation but has some limitations. In order to provide a high Q resonance the entire oscillator is placed in a metal box to prevent radiation losses. This increases the overall size of the device and makes it difficult to integrate in smaller transceiver topologies. Secondly, a tuning screw is required to help excite the dominant mode of the resonator to achieve the high Q response. This can cause problems in precision due to the mechanical jitter of the screw inherent in mobile devices. By embedding this resonator inside the substrate it is possible to realize a very high Q resonance at a desired frequency and remove the need for a metal cavity and tuning screw. An additional advantage can be seen in terms of overall size reduction of the oscillator circuit. To demonstrate the feasibility of utilizing a dielectric resonator embedded within a substrate, a K-Band oscillator proof of concept has been designed, fabricated, and tested. The oscillator is comprised of a low noise active transistor device, an embedded k-band dielectric resonator and a passive transmission line load network. All elements within the oscillator are optimized to produce a steady oscillation near 20 GHz. Preliminary investigations of a microstrip resonator S-band (2-3 GHz) oscillator are first discussed. Secondly, various challenges in design and fabrication are discussed. Thereafter, simulated and measured results of the embedded DRO structure are presented. Emphasis is placed on output oscillation power and low phase noise. With further development, the entire oscillator can be embedded within the substrate leaving only the active device on the surface. This allows for a considerable reduction in material cost and simple integration with miniaturized digital transmitter/receiver devices.
Show less
Date Issued: 2008
Identifier: CFE0002451, ucf:47718
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002451

Title: HIGH BIREFRINGENCE AND LOW VISCOSITY LIQUID CRYSTALS.
Creator: Wen, Chien-Hui, Wu, Shin-Tson, University of Central Florida
Abstract / Description: In this dissertation, liquid crystal (LC) materials and devices are investigated in order to meet the challenges for photonics and displays applications. We have studied three kinds of liquid crystal materials: positive dielectric anisotropic LCs, negative dielectric anisotropic LCs, and dual- frequency LCs. For the positive dielectric anisotropic LCs, we have developed some high birefringence isothiocyanato tolane LC compounds with birefringence ~0.4, and super high birefringence...
Show moreIn this dissertation, liquid crystal (LC) materials and devices are investigated in order to meet the challenges for photonics and displays applications. We have studied three kinds of liquid crystal materials: positive dielectric anisotropic LCs, negative dielectric anisotropic LCs, and dual- frequency LCs. For the positive dielectric anisotropic LCs, we have developed some high birefringence isothiocyanato tolane LC compounds with birefringence ~0.4, and super high birefringence isothiocyanato biphenyl-bistolane LC compounds with birefringence as high as ~0.7. Moreover, we have studied the photostability of several high birefringence LC compounds, mixtures, and LC alignment layers in order to determine the failure mechanism concerning the lifetime of LC devices. Although cyano and isothiocyanato LC compounds have similar absorption peaks, the isothiocyanato compounds are more stable than their cyano counterparts under the same illumination conditions. This ultraviolet-durable performance of isothiocyanato compounds originates from its molecular structure and the delocalized electron distribution. We have investigated the alignment performance of negative dielectric anisotropic LCs in homeotropic (vertical aligned, VA) LC cell. Some (2,3) laterally difluorinated biphenyls, terphenyls and tolanes are selected for this study. Due to the strong repulsive force between LCs and alignment layer, (2,3) laterally difluorinated terphenyls and tolanes do not align well in a VA cell resulting in a poor contrast ratio for the LC panel. We have developed a novel method to suppress the light leakage at dark state. By doping positive ƒ´ƒÕ or non-polar LC compounds/mixtures into the host negative LC mixtures, the repulsive force is reduced and the cell exhibits an excellent dark state. In addition, these dopants increase the birefringence and reduce the viscosity of the host LCs which leads to a faster response time. Dual-frequency liquid crystal exhibits a unique feature that its dielectric anisotropy changes from positive to negative when we increase the operating frequency. Submillisecond response time can be achieved by switching the frequency of a biased voltage, rather than switching the voltage at a given frequency. In this dissertation, we investigate the dielectric heating effect of dual-frequency LCs. Because the absorption peak of imaginary dielectric constant occurs at high frequency region (~ MHz), there is a heat generated when the LC cell is operated at a high frequency voltage. To measure the transient temperature change of the LC inside the cell, we have developed a non-contact method by utilizing the temperature-dependent birefringence property of the LC. Most importantly, we have formulated a new dual-frequency LC mixture which greatly reduces the dielectric heating effect while maintaining good physical properties. Another achievement in this thesis is that we have developed a polarization independent phase modulator by using a negative dielectric anisotropic LC gel. With ~20 % of polymer mixed in the LC host, the LC forms polymer network which, in turn, exerts a strong anchoring force to the neighboring LC molecules. As a result, the operating voltage increases but the response time is significantly decreased. On the phase shift point of view, our homeotropic LC gel has ~0.08 ƒàƒnphase shift, which is 2X larger than the previous nano-sized polymer-dispersed liquid crystal droplets. Moreover, it is free from light scattering and requires a lower operating voltage. In conclusion, this dissertation provides solutions to improve the performance of LC devices both in photonics and displays applications. These will have great impacts in defense and display systems such as optical phased array, LCD TVs, projectors, and LCD monitors.
Show less
Date Issued: 2006
Identifier: CFE0000970, ucf:46698
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000970

Title: ELECTROMECHANICAL LIFTING ACTUATION OF A MEMS CANTILEVER AND NANO-SCALE ANALYSIS OF DIFFUSION IN SEMICONDUCTOR DEVICE DIELECTRICS.
Creator: Rezadad, Imen, Peale, Robert, Del Barco, Enrique, Tetard, Laurene, Prenitzer, Brenda, University of Central Florida
Abstract / Description: This dissertation presents experimental and theoretical studies of physical phenomena in micro- and nano-electronic devices. Firstly, a novel and unproven means of electromechanical actuation in a micro-electro-mechanical system (MEMS) cantilever was investigated. In nearly all MEMS devices, electric forces cause suspended components to move toward the substrate. I demonstrated a design with the unusual and potentially very useful property of having a suspended MEMS cantilever lift away from...
Show moreThis dissertation presents experimental and theoretical studies of physical phenomena in micro- and nano-electronic devices. Firstly, a novel and unproven means of electromechanical actuation in a micro-electro-mechanical system (MEMS) cantilever was investigated. In nearly all MEMS devices, electric forces cause suspended components to move toward the substrate. I demonstrated a design with the unusual and potentially very useful property of having a suspended MEMS cantilever lift away from the substrate. The effect was observed by optical micro-videography, by electrical sensing, and it was quantified by optical interferometry. The results agree with predictions of analytic and numerical calculations. One potential application is infrared sensing in which absorbed radiation changes the temperature of the cantilever, changing the duty cycle of an electrically-driven, repetitively closing micro-relay.Secondly, ultra-thin high-k gate dielectric layers in two 22 nm technology node semiconductor devices were studied. The purpose of the investigation was to characterize the morphology and composition of these layers as a means to verify whether the transmission electron microscope (TEM) with energy dispersive spectroscopy (EDS) could sufficiently resolve the atomic diffusion at such small length scales. Results of analytic and Monte-Carlo numerical calculations were compared to empirical data to validate the ongoing viability of TEM EDS as a tool for nanoscale characterization of semiconductor devices in an era where transistor dimensions will soon be less than 10 nm.
Show less
Date Issued: 2015
Identifier: CFE0006228, ucf:51075
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006228

Title: ELECTRICAL CAPACITANCE VOLUME TOMOGRAPHY OF HIGH CONTRAST DIELECTRICS USING A CUBOID GEOMETRY.
Creator: Nurge, Mark, Schelling, Patrick, University of Central Florida
Abstract / Description: An Electrical Capacitance Volume Tomography system has been created for use with a new image reconstruction algorithm capable of imaging high contrast dielectric distributions. The electrode geometry consists of two 4 x 4 parallel planes of copper conductors connected through custom built switch electronics to a commercially available capacitance to digital converter. Typical electrical capacitance tomography (ECT) systems rely solely on mutual capacitance readings to reconstruct images of...
Show moreAn Electrical Capacitance Volume Tomography system has been created for use with a new image reconstruction algorithm capable of imaging high contrast dielectric distributions. The electrode geometry consists of two 4 x 4 parallel planes of copper conductors connected through custom built switch electronics to a commercially available capacitance to digital converter. Typical electrical capacitance tomography (ECT) systems rely solely on mutual capacitance readings to reconstruct images of dielectric distributions. This dissertation presents a method of reconstructing images of high contrast dielectric materials using only the self capacitance measurements. By constraining the unknown dielectric material to one of two values, the inverse problem is no longer ill-determined. Resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. Comparisons with standard two dimensional ECT systems highlight the capabilities and limitations of the electronics and reconstruction algorithm.
Show less
Date Issued: 2007
Identifier: CFE0001591, ucf:47119
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001591

Title: SCANNING FABRY-PEROT SPECTROMETER FOR TERAHERTZ AND GIGAHERTZ SPECTROSCOPY USING DIELECTRIC BRAGG MIRRORS.
Creator: Cleary, Justin, Peale, Robert, University of Central Florida
Abstract / Description: A scanning Fabry-Perot transmission filter composed of a pair of dielectric mirrors has been demonstrated at millimeter and sub-millimeter wavelengths. The mirrors are formed by alternating quarter-wave optical thicknesses of silicon and air in the usual Bragg configuration. Detailed theoretical considerations are presented for determining the optimum design including factors that affect achievable finesse. Fundamental loss by lattice and free carrier absorption are considered. High...
Show moreA scanning Fabry-Perot transmission filter composed of a pair of dielectric mirrors has been demonstrated at millimeter and sub-millimeter wavelengths. The mirrors are formed by alternating quarter-wave optical thicknesses of silicon and air in the usual Bragg configuration. Detailed theoretical considerations are presented for determining the optimum design including factors that affect achievable finesse. Fundamental loss by lattice and free carrier absorption are considered. High resistivity in the silicon layers was found important for achieving high transmittance and finesse, especially at the longer wavelengths. Also considered are technological factors such as surface roughness, bowing, and misalignment for various proposed manufacturing schemes. Characterization was performed at sub-mm wavelengths using a gas laser together with a Golay cell detector and at millimeter wavelengths using a backward wave oscillator and microwave power meter. A finesse value of 422 for a scanning Fabry-Perot cavity composed of three-period Bragg mirrors was experimentally demonstrated. Finesse values of several thousand are considered to be within reach. This suggests the possibility of a compact terahertz Fabry-Perot spectrometer that can operate in low resonance order to realize high free spectral range while simultaneously achieving a high spectral resolution. Such a device is directly suitable for airborne/satellite and man-portable sensing instrumentation.
Show less
Date Issued: 2007
Identifier: CFE0001563, ucf:47128
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001563

Title: ON THE NATURE OF THE FLOW IN A SEPARATED ANNULAR DIFFUSER.
Creator: Dunn, Jason, Kapat, Jayanta, University of Central Florida
Abstract / Description: The combustor-diffuser system remains one of the most studied sections of the turbomachine. Most of these investigations are due to the fact that quite a bit of flow diffusion is required in this section as the high speed flow exits the compressor and must be slowed down to enter the combustor. Like any diffusion process there is the chance for the development of an unfavorable adverse pressure gradient that can lead to flow separation; a cause of drastic losses within a turbine. There are...
Show moreThe combustor-diffuser system remains one of the most studied sections of the turbomachine. Most of these investigations are due to the fact that quite a bit of flow diffusion is required in this section as the high speed flow exits the compressor and must be slowed down to enter the combustor. Like any diffusion process there is the chance for the development of an unfavorable adverse pressure gradient that can lead to flow separation; a cause of drastic losses within a turbine. There are two diffusion processes in the combustor-diffuser system: The flow first exits the compressor into a pre-diffuser, or compressor discharge diffuser. This diffuser is responsible for a majority of the pressure recovery. The flow then exits the pre-diffuser by a sudden expansion into the dump diffuser. The dump diffuser comprises the majority of the losses, but is necessary to reduce the fluid velocity within acceptable limits for combustion. The topic of active flow control is gaining interest in the industry because such a technique may be able to alleviate some of the requirements of the dump diffuser. If a wider angle pre-diffuser with separation control were used the fluid velocity would be slowed more within that region without significant losses. Experiments were performed on two annular diffusers to characterize the flow separation to create a foundation for future active flow control techniques. Both diffusers had the same fully developed inlet flow condition, however, the expansion of the two diffusers differed such that one diffuser replicated a typical compressor discharge diffuser found in a real machine while the other would create a naturally separated flow along the outer wall. Both diffusers were tested at two Reynolds numbers, 5x104 and 1x105, with and without a vertical wall downstream of the exit to replicate the dump diffuser that re-directs the flow from the pre-diffuser outlet to the combustor. Static pressure measurements were obtained along the OD and ID wall of the diffusers to determine the recovered pressure throughout the diffuser. In addition to these measurements, tufts were used to visualize the flow. A turbulent CFD model was also created to compare against experimental results. In the end, the results were validated against empirical data as well as the CFD model. It was shown that the location of the vertical wall was directly related to the amount of separation as well as the separation characteristics. These findings support previous work and help guide future work for active flow control in a separated annular diffuser both computationally and experimentally.
Show less
Date Issued: 2009
Identifier: CFE0002953, ucf:47944
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002953

Title: Structure and Properties of Polymer-Derived SiBCN Ceramics.
Creator: Chen, Yaohan, An, Linan, Fang, Jiyu, Xu, Chengying, Zhai, Lei, Huo, Qun, Gong, Xun, University of Central Florida
Abstract / Description: Polymer-derived ceramics (PDCs) are a unique class of multifunctional materials synthesized by thermal decomposition of polymeric precursors. Due to their unique and excellent properties and flexible manufacturing capability, PDC is a promising technology to prepare ceramic fibers, coatings, composites and micro-sensors for high-temperature applications. However, the structure-property relationships of PDCs have not been well understood. The lack of such understandings drastically limited the...
Show morePolymer-derived ceramics (PDCs) are a unique class of multifunctional materials synthesized by thermal decomposition of polymeric precursors. Due to their unique and excellent properties and flexible manufacturing capability, PDC is a promising technology to prepare ceramic fibers, coatings, composites and micro-sensors for high-temperature applications. However, the structure-property relationships of PDCs have not been well understood. The lack of such understandings drastically limited the further developments and applications of the materials.In this dissertation, the structure and properties of amorphous polymer-derived silicon carbonitride (SiCN) and silicoboron carbonitride (SiBCN) have been studied. The SiCN was obtained using commercially available polysilazane as pre-ceramic precursor, and the SiBCN ceramics with varied Si-to-B ratio were obtained from polyborosilazanes, which were synthesized by the hydroboration and dehydrocoupling reaction of borane and polysilazane. The structural evolution of polymer-derived SiCN and SiBCN ceramics from polymer to ceramics was investigated by NMR, FTIR, Raman, EPR, TG/DTA, and XRD. The results show a phase-separation of amorphous matrix and a graphitization of (")free(") carbon phase, and suggest that the boron doping has a great influence on the structural evolution. The electric and dielectric properties of the SiCN and SiBCNs were studied by I-V curves, LCR Meter, and network analyzer. A new electronic conduction mechanism and structure model has been proposed to account for the relationships between the observed properties and microstructure of the materials. Furthermore, the SiBCN ceramics showed the improved dielectric properties at characterization temperature up to 1300 (&)#186;C, which allows the fabrication of ultrahigh-temperature wireless microsensors for extreme environments.
Show less
Date Issued: 2012
Identifier: CFE0004195, ucf:49014
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004195

Title: Investigation on electrical properties of RF sputtered deposited BCN thin films.
Creator: Prakash, Adithya, Sundaram, Kalpathy, Yuan, Jiann-Shiun, Lin, Mingjie, University of Central Florida
Abstract / Description: The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated...
Show moreThe ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance.Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B(&)#172;4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.
Show less
Date Issued: 2013
Identifier: CFE0004912, ucf:49625
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004912

Title: Three-phase contact line phenomena in droplets on solid and liquid surfaces: electrocapillary, pinning, wetting line velocity effect, and free liquid surface deformation.
Creator: Shabani, Roxana, Cho, Hyoung, Kumar, Ranganathan, Kapat, Jayanta, Chow, Louis, Zhai, Lei, University of Central Florida
Abstract / Description: In this dissertation, physical phenomena relevant to (i) an interface formed between two fluids and a solid phase (wettingline) and (ii) an interface between three fluids (triple contact line) were investigated. In the former case, the wetting line (WL)phenomena, which encompass the wetting line energy (WLE), the wetting line velocity (WLV), and the contact anglehysteresis, were studied using a micropump based on electrowetting on dielectric (EWOD). In the latter case, the air filmlubrication...
Show moreIn this dissertation, physical phenomena relevant to (i) an interface formed between two fluids and a solid phase (wettingline) and (ii) an interface between three fluids (triple contact line) were investigated. In the former case, the wetting line (WL)phenomena, which encompass the wetting line energy (WLE), the wetting line velocity (WLV), and the contact anglehysteresis, were studied using a micropump based on electrowetting on dielectric (EWOD). In the latter case, the air filmlubrication effect and the liquid free surface deformation were taken into account to explain the dual equilibrium states ofwater droplets on liquid free surfaces. A micropump based on droplet/meniscus pressure gradient generated by EWOD was designed and fabricated. By alteringthe contact angle between liquid and solid using an electric field a pressure gradient was induced and a small droplet waspumped into the channel. The flow rate in the channel was found to be constant in spite of the changes in the droplet'sradius. The WL phenomena were studied to unravel the physical concept behind the micropump constant flow rate. Theobservation and measurement reveal that the shrinking input droplet changes its shape in two modes in time sequence: (i)its contact angle decreases, while its wetting area remains constant, and (ii) its WL starts to move while its contact anglechanges. Contact angles were measured for the advancing and receding WLs at different velocities to capture a full pictureof contact angle behavior. The effects of the WLE on the static contact angle and the WLV on the dynamic contact angle inthe pump operation were investigated. Also the effect of EWOD voltage on the magnitude and uniformity of the micropumpflow rate was studied. Dynamic contact angles were used to accurately calculate the pressure gradient between the dropletand the meniscus, and estimate the flow rate. It was shown that neglecting either of these effects not only results in aconsiderable gap between the predicted and the measured flow rates but also in an unphysical instability in the flow rateanalysis. However, when the WLE and WLV effects were fully taken into account, an excellent agreement between thepredicted and the experimental flow rates was obtained.For the study of the TCL between three fluids, aqueous droplets were formed at oil-air interface and two stableconfigurations of (i) non-coalescent droplet and (ii) cap/bead droplet were observed. General solutions for energy and forceanalysis were obtained and were shown to be in good agreement with the experimental observations. Further the energybarrier obtained for transition from configuration (i) to (ii) was correlated to the droplet release height and the probability ofnon-coalescent droplet formation. Droplets formed on the solid surfaces and on the free surface of immiscible liquids have various applications indroplet-based microfluidic devices. This research provides an insight into their formation and manipulation.
Show less
Date Issued: 2013
Identifier: CFE0005253, ucf:50598
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005253

Title: Deposition and characterization studies of boron carbon nitride (BCN) thin films prepared by dual target sputtering.
Creator: Prakash, Adithya, Sundaram, Kalpathy, Kapoor, Vikram, Yuan, Jiann-Shiun, Jin, Yier, Chow, Louis, University of Central Florida
Abstract / Description: As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems related to circuit performance such as critical path signal delay are becoming a pressing issue. These delays are a result of resistance and capacitance product (RC time constant) of the interconnect circuit. A novel material with reduced dielectric constants may compromise both the thermal and mechanical properties that can lead to die cracking during package and other reliability issues. Boron...
Show moreAs complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems related to circuit performance such as critical path signal delay are becoming a pressing issue. These delays are a result of resistance and capacitance product (RC time constant) of the interconnect circuit. A novel material with reduced dielectric constants may compromise both the thermal and mechanical properties that can lead to die cracking during package and other reliability issues. Boron carbon nitride (BCN) compounds have been expected to combine the excellent properties of boron carbide (B4C), boron nitride (BN) and carbon nitride (C3N4), with their properties adjustable, depending on composition and structure. BCN thin film is a good candidate for being hard, dense, pore-free, low-k dielectric with values in the range of 1.9 to 2.1. Excellent mechanical properties such as adhesion, high hardness and good wear resistance have been reported in the case of sputtered BCN thin films. Problems posed by high hardness materials such as diamonds in high cutting applications and the comparatively lower hardness of c-BN gave rise to the idea of a mixed phase that can overcome these problems with a minimum compromise in its properties. A hybrid between semi-metallic graphite and insulating h-BN may show adjusted semiconductor properties. BCN exhibits the potential to control optical bandgap (band gap engineering) by atomic composition, hence making it a good candidate for electronic and photonic devices. Due to tremendous bandgap engineering capability and refractive index variability in BCN thin film, it is feasible to develop filters and mirrors for use in ultra violet (UV) wavelength region. It is of prime importance to understand process integration challenges like deposition rates, curing, and etching, cleaning and polishing during characterization of low-k films. The sputtering technique provides unique advantages over other techniques such as freedom to choose the substrate material and a uniform deposition over relatively large area. BCN films are prepared by dual target reactive magnetron sputtering from a B4C and BN targets using DC and RF powers respectively. In this work, an investigation of mechanical, optical, chemical, surface and device characterizations is undertaken. These holistic and thorough studies, will provide the insight into the capability of BCN being a hard, chemically inert, low-k, wideband gap material, as a potential leader in semiconductor and optics industry.
Show less
Date Issued: 2016
Identifier: CFE0006378, ucf:51496
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006378

dielectric properties (2)	+ -
3D display (1)	+ -
Advancing and receding wetting-lines (1)	+ -
Annealing (1)	+ -
BCN (1)	+ -

BCN etching (1)	+ -
BST (1)	+ -
Boron carbon nitride (BCN) (1)	+ -
Bragg mirror (1)	+ -
CATER (1)	+ -
Capacitor (1)	+ -
DRO (1)	+ -
Dielectric (1)	+ -
Dielectric Materials (1)	+ -
Dielectric Resonator (1)	+ -
Dielectrics (1)	+ -
Droplet (1)	+ -
Dual-Frequency (1)	+ -
Dynamic contact angle (1)	+ -
EDS (1)	+ -
Electrical Characterization (1)	+ -
Electrowetting on dielectric (1)	+ -
Embedded Oscillator (1)	+ -
FTIR (1)	+ -
Fabrication of MOSFET (1)	+ -
Fabry-Perot (1)	+ -
Gate Insulator (1)	+ -
Gate dielectrics (1)	+ -
Grating structures (1)	+ -
High Birefringence (1)	+ -

ETD Collection (17)	+ -
Honors Collection (1)	+ -

University of Central Florida (18)	+ -
Sundaram, Kalpathy (5)	+ -
Peale, Robert (3)	+ -
Chow, Louis (2)	+ -
Gong, Xun (2)	+ -

Kapat, Jayanta (2)	+ -
Kapoor, Vikram (2)	+ -
Prakash, Adithya (2)	+ -
Yuan, Jiann-Shiun (2)	+ -
Zhai, Lei (2)	+ -
An, Linan (1)	+ -
Brescia, Jonathan R (1)	+ -
Chen, Yaohan (1)	+ -
Cho, Hyoung (1)	+ -
Cleary, Justin (1)	+ -
Del Barco, Enrique (1)	+ -
Dunn, Jason (1)	+ -
Fang, Jiyu (1)	+ -
Fathpour, Sasan (1)	+ -
Huo, Qun (1)	+ -
Jin, Yier (1)	+ -
Kalita, Samar (1)	+ -
Kalpathy. B, Sundaram (1)	+ -
Kar, Aravinda (1)	+ -
Kumar, Ranganathan (1)	+ -
Li, Yan (1)	+ -
Lin, Mingjie (1)	+ -
Nurge, Mark (1)	+ -
Oswal, Ritika (1)	+ -
Peelamedu Ranganathan, Raviprakash (1)	+ -

Search In

Sort Results By:

Narrow results by:

Topical Subject

Collection

Type of Resource

Language

Creator

Format

Owner