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FABRICATION AND TRANSPORT STUDIES OF N-TYPE ORGANIC FIELD EFFECT TRANSISTORS USING ALIGNED ARRAY CARBON NANOTUBES ELECTRODES
Title
FABRICATION AND TRANSPORT STUDIES OF N-TYPE ORGANIC FIELD EFFECT TRANSISTORS USING ALIGNED ARRAY CARBON NANOTUBES ELECTRODES.
Creator
Jimenez, Edwards, Khondaker, Saiful, University of Central Florida
Abstract / Description
We present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between...
Show moreWe present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between the CNT source and drain electrodes, and compared against a controlled C60 OFET with gold electrodes. The electron transport measurements of the OFETs using CNT electrodes show better transistor characteristics compared to OFETs using gold electrodes due to improved charge injection from densely aligned and open-ended nanotube tips.
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Date Issued
2012
Identifier
CFH0004217, ucf:44941
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFH0004217
Nanoelectronic Devices using Carbon Nanotubes and Graphene Electrodes: Fabrication and Electronic Transport Investigations
Title
Nanoelectronic Devices using Carbon Nanotubes and Graphene Electrodes: Fabrication and Electronic Transport Investigations.
Creator
Kang, Narae, Khondaker, Saiful, Leuenberger, Michael, Zhai, Lei, University of Central Florida
Abstract / Description
Fabrication of high-performance electronic devices using the novel semiconductors is essential for developing future electronics which can be applicable in large-area, flexible and transparent displays, sensors and solar cells. One of the major bottlenecks in the fabrication of high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the...
Show moreFabrication of high-performance electronic devices using the novel semiconductors is essential for developing future electronics which can be applicable in large-area, flexible and transparent displays, sensors and solar cells. One of the major bottlenecks in the fabrication of high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the interface. Therefore, having a favorable contact at electrode/semiconductor is highly desirable for high-performance devices fabrication.In this dissertation, the fabrication of nanoelectronic devices and investigation of their transport properties using carbon nanotubes (CNTs) and graphene as electrode materials will be shown. I investigated two types of devices using (i) semiconducting CNTs, and (ii) organic semiconductors (OSC). In the first part of this thesis, I will demonstrate the fabrication of high-performance solution-processed highly enriched (99%) semiconducting CNT thin film transistors (s-CNT TFTs) using densely aligned arrays of metallic CNTs (m-CNTs) for source/drain electrodes. From the electronic transport measurements at room temperature, significant improvements of field-effect mobility, on-conductance, transconductance and current on/off ratio for m-CNT/s-CNT devices were found compared to control palladium (Pd contacted s-CNT devices. From the temperature dependent transport investigation, a lower Schottky barrier height for the m-CNT/s-CNT devices was found compared to the devices with control metal electrodes. The enhanced device performance can be attributed to the unique device geometry as well as strong ?- ? interaction at m-CNT/s-CNT interfaces. In addition, I also investigated s-CNT TFTs using reduced graphene oxide (RGO) electrodes.In the second part of my thesis, I will demonstrate high-performance organic field-effect transistors (OFETs) using different types of graphene electrodes. I show that the performance of OFETs with pentacene as OSC and RGO as electrode can be continuously improved by increasing the carbon sp2 fraction of RGO. The carbon sp2 fractions of RGO were varied by controlling the reduction time. When compared to control Pd electrodes, the mobility of the OFETs shows an improvement of ?200% for 61% sp2 fraction RGO, which further improves to ?500% for 80% RGO electrode. Similarly, I show that when the chemical vapor deposition (CVD) graphene film is used as electrodes in fabricating OFET, the better performance is observed in comparison to RGO electrodes. Our study suggests that, in addition to ?-? interaction at graphene/pentacene interface, the tunable electronic properties of graphene as electrode have a significant role in OFETs performance. For a fundamental understanding of the interface, we fabricated short-channel OFETs with sub-100nm channel length using graphene electrode. From the low temperature electronic transport measurements, a lower charge injection barrier was found compared to control metal electrode. The detailed investigations reported in this thesis clearly indicated that the use of CNT and graphene as electrodes can improve the performance of future nanoelectronic devices.
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Date Issued
2015
Identifier
CFE0006039, ucf:50982
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0006039
Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies
Title
Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies.
Creator
Liu, Wen, Liou, Juin, Yuan, Jiann-Shiun, Sundaram, Kalpathy, Shen, Zheng, Chen, Quanfang, University of Central Florida
Abstract / Description
Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and...
Show moreElectrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this research is to develop novel, effective and robust ESD protection solutions for both emerging technologies and modern complementary metal(-)oxide(-)semiconductor (CMOS) technologies.The Si nanowire field-effect transistors are projected by the International Technology Roadmap for Semiconductors as promising next-generation CMOS devices due to their superior DC and RF performances, as well as ease of fabrication in existing Silicon processing. Aiming at proposing ESD protection solutions for nanowire based circuits, the dimension parameters, fabrication process, and layout dependency of such devices under Human Body Mode (HBM) ESD stresses are studied experimentally in company with failure analysis revealing the failure mechanism induced by ESD. The findings, including design methodologies, failure mechanism, and technology comparisons should provide practical knowhow of the development of ESD protection schemes for the nanowire based integrated circuits. Organic thin-film transistors (OTFTs) are the basic elements for the emerging flexible, printable, large-area, and low-cost organic electronic circuits. Although there are plentiful studies focusing on the DC stress induced reliability degradation, the operation mechanism of OTFTs subject to ESD is not yet available in the literature and are urgently needed before the organic technology can be pushed into consumer market. In this work, the ESD operation mechanism of OTFT depending on gate biasing condition and dimension parameters are investigated by extensive characterization and thorough evaluation. The device degradation evolution and failure mechanism under ESD are also investigated by specially designed experiments. In addition to the exploration of ESD protection solutions in emerging technologies, efforts have also been placed in the design and analysis of a major ESD protection device, diode-triggered-silicon-controlled-rectifier (DTSCR), in modern CMOS technology (90nm bulk). On the one hand, a new type DTSCR having bi-directional conduction capability, optimized design window, high HBM robustness and low parasitic capacitance are developed utilizing the combination of a bi-directional silicon-controlled-rectifier and bi-directional diode strings. On the other hand, the HBM and Charged Device Mode (CDM) ESD robustness of DTSCRs using four typical layout topologies are compared and analyzed in terms of trigger voltage, holding voltage, failure current density, turn-on time, and overshoot voltage. The advantages and drawbacks of each layout are summarized and those offering the best overall performance are suggested at the end.
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Date Issued
2012
Identifier
CFE0004571, ucf:49199
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0004571
The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors
Title
The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors.
Creator
Kang, Narae, Khondaker, Saiful, Leuenberger, Michael, Zhai, Lei, University of Central Florida
Abstract / Description
Organic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display, integrated circuit, and radiofrequency identification tags. One of the major limiting factors in fabricating high-performance OFET is the large interfacial barrier between metal electrodes and OSC which...
Show moreOrganic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display, integrated circuit, and radiofrequency identification tags. One of the major limiting factors in fabricating high-performance OFET is the large interfacial barrier between metal electrodes and OSC which results in low charge injection from the metal electrodes to OSC. In order to overcome the challenge of low charge injection, carbon nanotubes (CNTs) have been suggested as a promising electrode material for organic electronic devices. In this dissertation, we study the effect of carbon nanotube (CNT) density in CNT electrodes on the performance of organic field effect transistor (OFETs). The devices were fabricated by thermal evaporation of pentacene on the Pd/single walled CNT (SWCNT) electrodes where SWCNTs of different density (0-30/um) were aligned on Pd using dielectrophoresis (DEP) and cut via oxygen plasma etching to keep the length of nanotube short compared to the channel length. From the electronic transport measurements of 40 devices, we show that the average saturation mobility of the devices increased from 0.02 for zero SWCNT to 0.06, 0.13 and 0.19 cm2/Vs for low (1-5 /(&)#181;m), medium (10-15 /(&)#181;m) and high (25-30 /(&)#181;m) SWCNT density in the electrodes, respectively. The increase is three, six and nine times for low, medium and high density SWCNTs in the electrode compared to the devices that did not contain any SWCNT. In addition, the current on-off ratio and on-current of the devices are increased up to 40 times and 20 times with increasing SWCNT density in the electrodes. Our study shows that although a few nanotubes in the electrode can improve the OFET device performance, significant improvement can be achieved by maximizing SWCNT/OSC interfacial area. The improved OFET performance can be explained due to a reduced barrier height of SWCNT/pentacene interface compared to metal/pentacene interface which provides more efficient charge injection pathways with increased SWCNT/pentacene interfacial area.
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Date Issued
2012
Identifier
CFE0004558, ucf:49252
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0004558
Fabrication and Study of Graphene-Based Nanocomposites for Sensing and Energy Applications
Title
Fabrication and Study of Graphene-Based Nanocomposites for Sensing and Energy Applications.
Creator
McInnis, Matthew, Zhai, Lei, Yestrebsky, Cherie, Zou, Shengli, Blair, Richard, Chen, Quanfang, University of Central Florida
Abstract / Description
Graphite is an allotrope of carbon made up of atomically thin sheets, each covalently bound together, forming a ?-conjugated network. An individual layer, called graphene, has extraordinary electrical, thermal and physical properties that provide the opportunity for innovating new functional composites. Graphene can be produced directly on a metallic substrate by chemical vapor deposition or by chemical oxidation of graphite, forming a stable aqueous suspension of graphene oxide (GO), which...
Show moreGraphite is an allotrope of carbon made up of atomically thin sheets, each covalently bound together, forming a ?-conjugated network. An individual layer, called graphene, has extraordinary electrical, thermal and physical properties that provide the opportunity for innovating new functional composites. Graphene can be produced directly on a metallic substrate by chemical vapor deposition or by chemical oxidation of graphite, forming a stable aqueous suspension of graphene oxide (GO), which allows for convenient solution processing techniques. For the latter, after thermal or chemical reduction, much of the properties of the starting graphene re-emerge due to the reestablishment of ?-conjugation. The ?-conjugated basal plane of graphene has been shown to influence the crystallization of ?-conjugated polymers, providing thermodynamically strong nucleation sites through the relatively strong ?-? interactions. These polymers can homocrystallize into 1-D filaments, but when nucleated from graphene, the orientation and geometry can be controlled producing hierarchical structures containing an electrical conductor decorated with wires of semi-conducting polymer. The resulting structures and crystallization kinetics of the conjugated polymer, poly(3-hexylthiophene-2,5-diyl) (P3HT) nucleated by graphene was studied. Further, field-effect transistors were developed using graphene as both the electrodes and the polymer crystallization surface to directly grow P3HT nanowires as the active material. This direct crystallization technique lead to higher charge mobility and higher on-off ratios, and this result was interpreted in terms of the morphology and polymer-graphene interface.Besides these thin-film technologies, neat GO suspensions can be lyophilized to produce monolithic, free-standing aerogels and then reduced to produce an electrically conductive porous material with a surface area greater than 1000 m2/g. The present research focuses on functionalizing the aerogel surfaces with metal nanoparticles to increase electrical conductivity and to impart functionality. Functionalization was carried out by adding a metal salt as a precursor and a chelating agent to inhibit GO flocculation. The GO and metal salt were simultaneously reduced to form rGO aerogels homogeneously loaded with metal nanoparticles. The size and distribution of these nanoparticles was controlled by concentration and chelating agent identity and abundance. Optimum aerogel formulations were used as a functioning and reversible conductometric hydrogen gas sensor and as an anode in an asymmetric supercapacitor with excellent properties.
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Date Issued
2015
Identifier
CFE0006227, ucf:51066
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0006227