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(1 - 13 of 13)
- Title
- Entangled Photon Pairs in Disordered Photonic Lattices.
- Creator
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Martin, Lane, Saleh, Bahaa, Abouraddy, Ayman, Christodoulides, Demetrios, Leuenberger, Michael, University of Central Florida
- Abstract / Description
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Photonic lattices consisting of arrays of evanescently coupled waveguides fabricated with precisely controlled parameters have enabled the study of discrete optical phenomena, both classical and quantum, and the simulation of other physical phenomena governed by the same dynamics. In this dissertation, I have experimentally demonstrated transverse Anderson localization of classical light in arrays with off-diagonal coupling disorder and investigated theoretically and experimentally the...
Show morePhotonic lattices consisting of arrays of evanescently coupled waveguides fabricated with precisely controlled parameters have enabled the study of discrete optical phenomena, both classical and quantum, and the simulation of other physical phenomena governed by the same dynamics. In this dissertation, I have experimentally demonstrated transverse Anderson localization of classical light in arrays with off-diagonal coupling disorder and investigated theoretically and experimentally the propagation of entangled photon pairs through such disordered systems. I discovered a new phenomenon, Anderson co-localization, in which a spatially entangled photon pair in a correlated transversally extended state localizes in the correlation space, though neither photon localizes on its own. When the photons of a pair are in an anti-correlated state, they maintain their anti-correlation upon transmission through the disordered lattice, exhibiting Anderson anti-localization. These states were generated by use of parametric down conversion in a nonlinear crystal. The transition between the correlated and anti-correlated states was also explored by using a lens system in a configuration intermediate between imaging and Fourier transforming. In the course of this research, I discovered a curious aspect of light transmission through such disordered discrete lattices. An excitation wave of a single spatial frequency (transverse momentum) is transmitted through the system and is accompanied by another wave with the same spatial frequency but opposite sign, indicating some form of internal reflection facilitated by the disordered structure.
Show less - Date Issued
- 2014
- Identifier
- CFE0005527, ucf:50312
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005527
- Title
- Thin-film Lithium Niobate Photonics for Electro-optics, Nonlinear Optics, and Quantum Optics on Silicon.
- Creator
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Rao, Ashutosh, Fathpour, Sasan, Delfyett, Peter, Li, Guifang, Thomas, Jayan, University of Central Florida
- Abstract / Description
-
Ion-sliced thin-film lithium niobate (LN) compact waveguide technology has facilitated the resurgence of integrated photonics based on lithium niobate. These thin-film LN waveguides offer over an order of magnitude improvement in optical confinement, and about two orders of magnitude reduction in waveguide bending radius, compared to conventional LN waveguides. Harnessing the improved confinement, a variety of miniaturized and efficient photonic devices are demonstrated in this work. First,...
Show moreIon-sliced thin-film lithium niobate (LN) compact waveguide technology has facilitated the resurgence of integrated photonics based on lithium niobate. These thin-film LN waveguides offer over an order of magnitude improvement in optical confinement, and about two orders of magnitude reduction in waveguide bending radius, compared to conventional LN waveguides. Harnessing the improved confinement, a variety of miniaturized and efficient photonic devices are demonstrated in this work. First, two types of compact electrooptic modulators are presented (-) microring modulators, and Mach-Zehnder modulators. Next, two distinct approaches to nonlinear optical frequency converters are implemented (-) periodically poled lithium niobate, and mode shape modulation (grating assisted quasi-phase matching). Following this, stochastic variations are added to the mode shape modulation approach to demonstrate random quasi-phase matching. Afterward, broadband photon-pair generation is demonstrated in the miniaturized periodically poled lithium niobate, and spectral correlations of the biphoton spectrum are reported. Finally, extensions of the aforementioned results suitable for future work are discussed.
Show less - Date Issued
- 2018
- Identifier
- CFE0007085, ucf:52013
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007085
- Title
- Two-photon absorption in bulk semiconductors and quantum well structures and its applications.
- Creator
-
Pattanaik, Himansu, Vanstryland, Eric, Hagan, David, Delfyett, Peter, Schoenfeld, Winston, Peale, Robert, University of Central Florida
- Abstract / Description
-
The purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled semiconductors. The use of END, where the two photons have very different energies gives strong enhancement comapared to degenerate 2PA. This END-2PA enhanced detection is also applied to mid-IR imaging...
Show moreThe purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled semiconductors. The use of END, where the two photons have very different energies gives strong enhancement comapared to degenerate 2PA. This END-2PA enhanced detection is also applied to mid-IR imaging and light detection and ranging (LIDAR) in uncooled direct-gap photodiodes. A theoretical study of degenerate 2PA (D-2PA) in quantum wells, QWs, is presented, along with a new theory of ND 2PA in QWs is developed. Pulsed mid-IR detection of femtosecond pulses is investigated in two different semiconductor p-i-n photodiodes (GaAs and GaN). With the smaller gap materials having larger ND-2PA, it is observed that they have better sensitivity to mid-IR detection, but unwanted background from D-2PA outweighs this advantage. A comparison of responsivity and signal-to-background ratio for GaAs and GaN in END-2PA based detection is presented. END-2PA enhancement is utilized for CW IR detection in uncooled GaAs and GaN p-i-n photodiodes. The pulsed mid-IR detection experiments are further extended to perform mid-IR imaging in uncooled GaN p-i-n photodetectors. A 3-D automated scanning gated imaging system is developed to obtain 3-D mid-IR images of various objects. The gated imaging system allows simultaneous 3-D and 2-D imaging of objects. The 3-D gated imaging system described in the dissertation could be used for examination of buried structures (microchannels, defects etc.) or laser written volumetric structures and could also be suitable for in-vivo imaging applications in biology in the mid-IR spectral region. As an example, 3-D imaging of buried semiconductor structures is presented.A theoretical study of D-2PA of QWs for transverse electric (TE) and transverse magnetic (TM) fields is carried out and an analytical expression for the D-2PA coefficient in QWs using second-order perturbation theory is derived. A theory for ND-2PA in QW semiconductor using second-order perturbation theory is developed for the first time and an analytical expression for the ND-2PA coefficient for TE, TM, and the mixed case of TE and TM is derived. The shape of the 2PA curve for the D-2PA and ND-2PA for QWs in the TE case is similar to that of bulk semiconductors. As governed by the selection rules both the D-2PA and ND-2PA curves for the TE case does not show a step-like signature for the density of states of the QWs whereas 2PA curve for the TM case shows such step like sharp features. The ND-2PA coefficient for TE, TM, and the mixed case is compared with that obtained for bulk semiconductors. Large enhancement in ND-2PA of QW semiconductors for the TM case over bulk semiconductors is predicted.
Show less - Date Issued
- 2015
- Identifier
- CFE0005684, ucf:50164
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005684
- Title
- ELECTRO-OPTICAL AND ALL-OPTICAL SWITCHING IN MULTIMODE INTERFERENCE WAVEGUIDES INCORPORATING SEMICONDUCTOR NANOSTRUCTURES.
- Creator
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Bickel, Nathan, LiKamWa, Patrick, University of Central Florida
- Abstract / Description
-
The application of epitaxially grown, III-V semiconductor-based nanostructures to the development of electro-optical and all-optical switches is investigated through the fabrication and testing of integrated photonic devices designed using multimode interference (MMI) waveguides. The properties and limitations of the materials are explored with respect to the operation of those devices through electrical carrier injection and optical pumping. MMI waveguide geometry was employed as it offered...
Show moreThe application of epitaxially grown, III-V semiconductor-based nanostructures to the development of electro-optical and all-optical switches is investigated through the fabrication and testing of integrated photonic devices designed using multimode interference (MMI) waveguides. The properties and limitations of the materials are explored with respect to the operation of those devices through electrical carrier injection and optical pumping. MMI waveguide geometry was employed as it offered advantages such as a very compact device footprint, low polarization sensitivity, large bandwidth and relaxed fabrication tolerances when compared with conventional single-mode waveguide formats. The first portion of this dissertation focuses on the characterization of the materials and material processing techniques for the monolithic integration of In0.15Ga0.85As/GaAs self-assembled quantum dots (SAQD) and InGaAsP/InGaAsP multiple quantum wells (MQW). Supplemental methods for post-growth bandgap tuning and waveguide formation were developed, including a plasma treatment process which is demonstrated to reliably inhibit thermally induced interdiffusion of Ga and In atoms in In0.15Ga0.85As/GaAs quantum dots. The process is comparable to the existing approach of capping the SAQD wafer with TiO2, while being simpler to implement along-side companion techniques such as impurity free vacancy disordering. Study of plasma-surface interactions in both wafer structures suggests that the effect may be dependent on the composition of the contact layer. The second portion of this work deals with the design, fabrication, and the testing of MMI switches which are used to investigate the limits of electrical current control when employing SAQD as the active core material. A variable power splitter based on a 3-dB MMI coupler is used to analyze the effects of sub-microsecond electrical current pulses in relation to carrier and thermal nonlinearities. Electrical current controlled switching of the variable power splitter and a tunable 2 x 2 MMI coupler is also demonstrated. The third part of this dissertation explores the response of In0.15Ga0.85As/GaAs SAQD waveguide structures to photogenerated carriers. Also presented is a simple, but effective, design modification to the 2 x 2 MMI cross-coupler switch that allows control over the carrier distribution within the MMI waveguide. This technique is combined with selective-area bandgap tuning to demonstrate a compact, working, all-optical MMI based switch.
Show less - Date Issued
- 2010
- Identifier
- CFE0003220, ucf:48568
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003220
- Title
- MODELING AND DESIGN OF A PHOTONIC CRYSTAL CHIP HOSTING A QUANTUM NETWORK MADE OF SINGLE SPINS IN QUANTUM DOTS THAT INTERACT VIA SINGLE PHOTONS.
- Creator
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Seigneur, Hubert, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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In this dissertation, the prospect of a quantum technology based on a photonic crystal chip hosting a quantum network made of quantum dot spins interacting via single photons is investigated. The mathematical procedure to deal with the Liouville-Von Neumann equation, which describes the time-evolution of the density matrix, was derived for an arbitrary system, giving general equations. Using this theoretical groundwork, a numerical model was then developed to study the spatiotemporal dynamics...
Show moreIn this dissertation, the prospect of a quantum technology based on a photonic crystal chip hosting a quantum network made of quantum dot spins interacting via single photons is investigated. The mathematical procedure to deal with the Liouville-Von Neumann equation, which describes the time-evolution of the density matrix, was derived for an arbitrary system, giving general equations. Using this theoretical groundwork, a numerical model was then developed to study the spatiotemporal dynamics of entanglement between various qubits produced in a controlled way over the entire quantum network. As a result, an efficient quantum interface was engineered allowing for storage qubits and traveling qubits to exchange information coherently while demonstrating little error and loss in the process; such interface is indispensable for the realization of a functional quantum network. Furthermore, a carefully orchestrated dynamic control over the propagation of the flying qubit showed high-efficiency capability for on-chip single-photon transfer. Using the optimized dispersion properties obtained quantum mechanically as design parameters, a possible physical structure for the photonic crystal chip was constructed using the Plane Wave Expansion and Finite-Difference Time-Domain numerical techniques, exhibiting almost identical transfer efficiencies in terms of normalized energy densities of the classical electromagnetic field. These promising results bring us one step closer to the physical realization of an integrated quantum technology combining both semiconductor quantum dots and sub-wavelength photonic structures.
Show less - Date Issued
- 2010
- Identifier
- CFE0003433, ucf:48391
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003433
- Title
- WAVELENGTH-DIVISION-MULTIPLEXED TRANSMISSION USING SEMICONDUCTOR OPTICAL AMPLIFIERS AND ELECTRONIC IMPAIRMENT COMPENSATION.
- Creator
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LI, XIAOXU, Li, Guifang, University of Central Florida
- Abstract / Description
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Over the last decade, rapid growth of broadband services necessitated research aimed at increasing transmission capacity in fiber-optic communication systems. Wavelength division multiplexing (WDM) technology has been widely used in fiber-optic systems to fully utilize fiber transmission bandwidth. Among optical amplifiers for WDM transmission, semiconductor optical amplifier (SOA) is a promising candidate, thanks to its broad bandwidth, compact size, and low cost. In transmission systems...
Show moreOver the last decade, rapid growth of broadband services necessitated research aimed at increasing transmission capacity in fiber-optic communication systems. Wavelength division multiplexing (WDM) technology has been widely used in fiber-optic systems to fully utilize fiber transmission bandwidth. Among optical amplifiers for WDM transmission, semiconductor optical amplifier (SOA) is a promising candidate, thanks to its broad bandwidth, compact size, and low cost. In transmission systems using SOAs, due to their large noise figures, high signal launching powers are required to ensure reasonable optical signal-to-noise ratio of the received signals. Hence the SOAs are operated in the saturation region and the signals will suffer from SOA impairments including self-gain modulation, self-phase modulation, and inter channel crosstalk effects such as cross-gain modulation, cross-phase modulation, and four-wave mixing in WDM. One possibility to circumvent these nonlinear impairments is to use constant-intensity modulation format in the 1310 nm window where dispersion is also negligible. In this dissertation, differential phase-shift keying (DPSK) WDM transmission in the 1310 nm window using SOAs was first considered to increase the capacity of existing telecommunication network. A WDM transmission of 4 × 10 Gbit/s DPSK signals over 540 km standard single mode fiber (SSMF) using cascaded SOAs was demonstrated in a recirculating loop. In order to increase the transmission reach of such WDM systems, those SOA impairments must be compensated. To do so, an accurate model for quantum-dot (QD) SOA must be established. In this dissertation, the QD-SOA was modeled with the assumption of overall charge neutrality. Static gain was calculated. Optical modulation response and nonlinear phase noise were studied semi-analytically based on small-signal analysis. The quantitative studies show that an ultrafast gain recovery time of ~0.1 ps can be achieved when QD-SOAs are under high current injection, which leads to high saturation output power. However more nonlinear phase noise is induced when the QD-SOAs are used in the transmission systems operating at 10 Gbit/s or 40 Gbit/s. Electronic post-compensation for SOA impairments using coherent detection and digital signal processing (DSP) was investigated next in this dissertation. An on-off keying transmission over 100 km SSMF using three SOAs at 1.3 um were demonstrated experimentally with direct detection and SOA impairment compensation. The data pattern effect of the signal was compensated effectively. Both optimum launching power and Q-factor were improved by 8 dB. For advanced modulation formats involving phase modulation or in transmission windows with large dispersion, coherent detection must be used and fiber impairments in WDM systems need to be compensated as well. The proposed fiber impairment compensation is based on digital backward propagation. The corresponding DSP implementation was described and the required calculations as well as system latency were derived. Finally joint SOA and fiber impairment compensations were experimentally demonstrated for an amplitude-phase-shift keying transmission.
Show less - Date Issued
- 2009
- Identifier
- CFE0002932, ucf:47960
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0002932
- Title
- On-Chip Optical Stabilization of High-Speed Mode-locked Quantum Dot Lasers for Next Generation Optical Networks.
- Creator
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Ardey, Abhijeet, Delfyett, Peter, Chow, Lee, Peale, Robert, Likamwa, Patrick, University of Central Florida
- Abstract / Description
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Monolithic passively mode-locked colliding pulse semiconductor lasers generating pico- to sub-picosecond terahertz optical pulse trains are promising sources for future applications in ultra-high speed data transmission systems and optical measurements. However, in the absence of external synchronization, these passively mode-locked lasers suffer from large amplitude and timing jitter instabilities resulting in broad comb linewidths, which precludes many applications in the field of coherent...
Show moreMonolithic passively mode-locked colliding pulse semiconductor lasers generating pico- to sub-picosecond terahertz optical pulse trains are promising sources for future applications in ultra-high speed data transmission systems and optical measurements. However, in the absence of external synchronization, these passively mode-locked lasers suffer from large amplitude and timing jitter instabilities resulting in broad comb linewidths, which precludes many applications in the field of coherent communications and signal processing where a much narrower frequency line set is needed. In this dissertation, a novel quantum dot based coupled cavity laser is presented, where for the first time, four-wave mixing (FWM) in the monolithically integrated saturable absorber is used to injection lock a monolithic colliding pulse mode-locked (CPM) laser with a mode-locked high-Q ring laser. Starting with a passively mode-locked master ring laser, a stable 30 GHz optical pulse train is generated with more than 10 dB reduction in the RF noise level at 20 MHz offset and close to 3-times reduction in the average optical linewidth of the injection locked CPM slave laser. The FWM process is subsequently verified experimentally and conclusively shown to be the primary mechanism responsible for the observed injection locking. Other linear scattering effects are found to be negligible, as predicted in the orthogonal waveguide configuration. The novel injection locking technique is further exploited by employing optical hybrid mode-locking and increasing the Q of the master ring cavity, to realize an improved stabilization architecture. Dramatic reduction is shown with more than 14-times reduction in the photodetected beat linewidth and almost 5-times reduction in the optical linewidth of the injection locked slave laser with generation of close to transform limited pulses at ~ 30 GHz. These results demonstrate the effectiveness of the novel injection locking technique for an all-on-chip stability transfer and provides a new way of stabilizing monolithic optical pulse sources for applications in future high speed optical networks.
Show less - Date Issued
- 2014
- Identifier
- CFE0005299, ucf:50518
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005299
- Title
- COMPUTATIONAL STUDY OF THE NEAR FIELD SPONTANEOUS CREATION OF PHOTONIC STATES COUPLED TO FEW LEVEL SYSTEMS.
- Creator
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Tafur, Sergio, Leuenberger, Michael, University of Central Florida
- Abstract / Description
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Models of the spontaneous emission and absorption of photons coupled to the electronic states of quantum dots, molecules, N-V (single nitrogen vacancy) centers in diamond, that can be modeled as artificial few level atoms, are important to the development of quantum computers and quantum networks. A quantum source modeled after an effective few level system is strongly dependent on the type and coupling strength the allowed transitions. These selection rules are subject to the Wigner-Eckert...
Show moreModels of the spontaneous emission and absorption of photons coupled to the electronic states of quantum dots, molecules, N-V (single nitrogen vacancy) centers in diamond, that can be modeled as artificial few level atoms, are important to the development of quantum computers and quantum networks. A quantum source modeled after an effective few level system is strongly dependent on the type and coupling strength the allowed transitions. These selection rules are subject to the Wigner-Eckert theorem which specifies the possible transitions during the spontaneous creation of a photonic state and its subsequent emission. The model presented in this dissertation describes the spatio-temporal evolution of photonic states by means of a Dirac-like equation for the photonic wave function within the region of interaction of a quantum source. As part of this aim, we describe the possibility to shift from traditional electrodynamics and quantum electrodynamics, in terms of electric and magnetic fields, to one in terms of a photonic wave function and its operators. The mapping between these will also be presented herein. It is further shown that the results of this model can be experimentally verified. The suggested method of verification relies on the direct comparison of the calculated density matrix or Wigner function, associated with the quantum state of a photon, to ones that are experimentally reconstructed through optical homodyne tomography techniques. In this non-perturbative model we describe the spontaneous creation of photonic state in a non-Markovian limit which does not implement the Weisskopf-Wigner approximation. We further show that this limit is important for the description of how a single photonic mode is created from the possibly infinite set of photonic frequencies $\nu_k$ that can be excited in a dielectric-cavity from the vacuum state. We use discretized central-difference approximations to the space and time partial derivatives, similar to finite-difference time domain models, to compute these results. The results presented herein show that near field effects need considered when describing adjacent quantum sources that are separated by distances that are small with respect to the wavelength of their spontaneously created photonic states. Additionally, within the future scope of this model,we seek results in the Purcell and Rabi regimes to describe enhanced spontaneous emission events from these few-level systems, as embedded in dielectric cavities. A final goal of this dissertation is to create novel computational and theoretical models that describe single and multiple photon states via single photon creation and annihilation operators.
Show less - Date Issued
- 2011
- Identifier
- CFE0003881, ucf:48739
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003881
- Title
- ULTRASHORT, HIGH POWER, AND ULTRALOW NOISE MODE-LOCKED OPTICAL PULSE GENERATION USING QUANTUM-DOT SEMICONDUCTOR LASERS.
- Creator
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Choi, Myoung-Taek, Delfyett, Peter, University of Central Florida
- Abstract / Description
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This dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section...
Show moreThis dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section devices. Short pulse generation from an external cavity mode-locked QD two-section diode laser is studied. High quality, sub-picosecond (960 fs), high peak power (1.2 W) pulse trains are obtained. The sign and magnitude of pulse chirp were measured for the first time. The role of the self-phase modulation and the linewidth enhancement factor in QD mode-locked lasers is addressed. The noise performance of two-section mode-locked lasers and a SOA-based ring laser was investigated. Significant reduction of the timing jitter under hybrid mode-locked operation was achieved owing to more than one order of magnitude reduction of the linewidth in QD gain media. Ultralow phase noise performance (integrated timing jitter of a few fs at a 10 GHz repetition rate) was demonstrated from an actively mode-locked unidirectional ring laser. These results show that quantum dot mode-locked lasers are strong competitors to conventional semiconductor lasers in noise performance. Finally we demonstrated an opto-electronic oscillator (OEO) and coupled opto-electronic oscillators (COEO) which have the potential for both high purity microwave and low noise optical pulse generation. The phase noise of the COEO is measured by the photonic delay line frequency discriminator method. Based on this study we discuss the prospects of the COEO as a low noise optical pulse source.
Show less - Date Issued
- 2006
- Identifier
- CFE0001410, ucf:47068
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001410
- Title
- The Consequences of a Reduced Superlattice Thickness on Quantum Cascade LASER Performance.
- Creator
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Figueiredo, Pedro, Lyakh, Arkadiy, Peale, Robert, Klemm, Richard, Fathpour, Sasan, University of Central Florida
- Abstract / Description
-
Coherent infrared radiation sources are essential for the operability of a wide range of scientific, industrial, military and commercial systems. The importance of the mid-infrared spectral region cannot be understated. Numerous molecules have some vibrational band in this range, allowing for identification of species by means of absorption, emission or some other form of spectroscopy. As such, spectroscopy alone has numerous applications ranging from industrial process control to disease...
Show moreCoherent infrared radiation sources are essential for the operability of a wide range of scientific, industrial, military and commercial systems. The importance of the mid-infrared spectral region cannot be understated. Numerous molecules have some vibrational band in this range, allowing for identification of species by means of absorption, emission or some other form of spectroscopy. As such, spectroscopy alone has numerous applications ranging from industrial process control to disease diagnosis utilizing breath analysis. However, despite the discovery of the LASER in the 60s, to this day the amount of coherent sources in this range is limited. It is for this reason that the quantum cascade laser has gained such momentum over the past 23 years.Quantum Cascade LASERS (QCL) are semiconductor LASERS which are based on the principle of bandgap engineering. This incredible technique is a testament to the technological maturity of the semiconductor industry. It has been demonstrated that by having precise control of individual material composition (band gap control), thicknesses on the order of monolayers, and doping levels for each individual layer in a superlattice, we have unprecedented flexibility in designing a LASER or detector in the infrared. And although the technology has matured since it's discovery, there still remain fundamental limitations on device performance. In particular, active region overheating limits QCL performance in a high duty cycle mode of operation.In this dissertation, along with general discussion on the background of the QCL, we propose a solution of where by limiting the growth of the superlattice to a fraction of typical devices, we allow for reduction of the average superlattice temperature under full operational conditions. The consequences of this reduction are explored in theory, experiment and system level applications.
Show less - Date Issued
- 2017
- Identifier
- CFE0006592, ucf:51273
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006592
- Title
- LONG CAVITY QUANTUM DOT LASER DIODE AND MONOLITHIC PASSIVELY MODE-LOCKED OPERATION.
- Creator
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Shavitranuruk, K, Deppe, Dennis, University of Central Florida
- Abstract / Description
-
Advantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented. The dissertation describes the development and the unique characteristics...
Show moreAdvantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented. The dissertation describes the development and the unique characteristics of single QD active layer laser with long cavity. The data are presented on single layer QD laser diodes that reach threshold current densities values of 11.7 A/cm2 in a p-up mounted 2 cm long cavity and as low as 10 A/cm2, with CW output power of 2 W in a p-down mounted 1.6 cm long cavity. The 8.8 A/cm2 in a p-down mounted 2 cm long cavity is reported. To our knowledge the value 8.8 A/cm2 is the lowest threshold current density ever reported for a room temperature laser diode. These single layer QD laser diodes reach an internal loss of ~0.25 cm-1, which is also the lowest ever reported for a room temperature laser diode. These unique characteristics of single layer QD and laser diode size are potentially promising for the monolithic mode-locked laser because of relatively high peak power with a low repetition rate that is on the order of a few GHz, which can be the novel device for external clocking in the optical interconnect applications. In this dissertation, the stable optical pulse train in a 40 µm wide stripe with a repetition rate of 3.75 GHz with 1.1 cm cavity length through the passive mode-locked onto the monolithic two-section device fabricated from this single layer QD laser is observed.
Show less - Date Issued
- 2010
- Identifier
- CFE0003145, ucf:48646
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003145
- Title
- INTEGRATED INP PHOTONIC SWITCHES.
- Creator
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May-Arrioja, Daniel, LiKamWa, Patrick, University of Central Florida
- Abstract / Description
-
Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and...
Show morePhotonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.
Show less - Date Issued
- 2006
- Identifier
- CFE0001368, ucf:47007
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001368
- Title
- Quantum Chemical Studies for the Engineering of Metal Organic Materials.
- Creator
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Rivera Jacquez, Hector, Masunov, Artem, Balaeff, Alexander, Harper, James, Heider, Emily, Zou, Shengli, Kaden, William, University of Central Florida
- Abstract / Description
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Metal Organic Materials (MOM) are composed of transition metal ions as connectors and organic ligands as linkers. MOMs have been found to have high porosity, catalytic, and optical properties. Here we study the gas adsorption, color change, and non-linear optical properties of MOMs. These properties can be predicted using theoretical methods, and the results may provide experimentalists with guidance for rational design and engineering of novel MOMs. The theory levels used include semi...
Show moreMetal Organic Materials (MOM) are composed of transition metal ions as connectors and organic ligands as linkers. MOMs have been found to have high porosity, catalytic, and optical properties. Here we study the gas adsorption, color change, and non-linear optical properties of MOMs. These properties can be predicted using theoretical methods, and the results may provide experimentalists with guidance for rational design and engineering of novel MOMs. The theory levels used include semi-empirical quantum mechanical calculations with the PM7 Hamiltonian and, Density Functional Theory (DFT) to predict the geometry and electronic structure of the ground state, and Time Dependent DFT (TD-DFT) to predict the excited states and the optical properties.The molecular absorption capacity of aldoxime coordinated Zn(II) based MOMs (previously measured experimentally) is predicted by using PM7 Theory level. The 3D structures were optimized with and without host molecules inside the pores. The absorption capacity of these crystals was predicted to be 8H2 or 3N2 per unit cell. When going beyond this limit, the structural integrity of the bulk material becomes fractured and microcrystals are observed both experimentally and theoretically.The linear absorption properties of Co(II) based complexes are known to change color when the coordination number is altered. In order to understand the mechanism of this color change TD-DFT methods are employed. The chromic behavior of the Co(II) based complexes studied was confirmed to be due to a chain in coordination number that resulted in lower metal to ligand distances. These distances destabilize the occupied metal d orbitals, and as a consequence of this, the metal to ligand transition energy is lowered enough to allow the crystals to absorb light at longer wavelengths.Covalent organic frameworks (COFs) present an extension of MOM principles to the main group elements. The synthesis of ordered COFs is possible by using predesigned structures andcarefully selecting the building blocks and their conditions for assembly. The crystals formed by these systems often possess non-linear optical (NLO) properties. Second Harmonic Generation (SHG) is one of the most used optical processes. Currently, there is a great demand for materials with NLO optical properties to be used for optoelectronic, imaging, sensing, among other applications. DFT calculations can predict the second order hyperpolarizability ?2 and tensor components necessary to estimate NLO. These calculations for the ?2 were done with the use of the Berry's finite field approach. An efficient material with high ?2 was designed and the resulting material was predicted to be nearly fivefold higher than the urea standard.Two-photon absorption (2PA) is another NLO effect. Unlike SHG, it is not limited to acentric material and can be used development of in vivo bio-imaging agents for the brain. Pt(II) complexes with porphyrin derivatives are theoretically studied for that purpose. The mechanism of 2PA enhancement was identified. For the most efficient porphyrin, the large 2PA cross-section was found to be caused by a HOMO-LUMO+2 transition. This transition is strongly coupled to 1PA allowed Q-band HOMO-LUMO states by large transition dipoles. Alkyl carboxyl substituents delocalize the LUMO+2 orbital due to their strong ?-acceptor effect, enhancing transition dipoles and lowering the 2PA transition to the desirable wavelengths range.The mechanism 2PA cross-section enhancement of aminoxime and aldoxime ligands upon metal addition of is studied with TD-DFT methods. This mechanism of enhancement is found to be caused by the polarization of the ligand orbitals by the metal cation. After polarization an increase in ligand to ligand transition dipole moment. This enhancement of dipole moment is related to the increase in 2PA cross-sections.
Show less - Date Issued
- 2015
- Identifier
- CFE0005990, ucf:50777
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005990
