Current Search: Single-electron transistors (x)
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(1 - 5 of 5)
- Title
- Development of an Efficient Molecular Single-Electron Transport Spectroscopy.
- Creator
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Rodriguez Garrigues, Alvar, Gonzalez Garcia, Enrique, Flitsiyan, Elena, Ishigami, Marsahir, University of Central Florida
- Abstract / Description
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In this thesis I present a complete and detailed guide for the development process and fabrication of efficient single-electron transistors (SETs) and a better single-molecule magnets (SMMs) deposition yield. Starting from a commercial Si/SiO2 wafer I show the steps for the deposition of different layers to fabricate a SET as well as the improvements achieved in those for a completely functional SET device. The development process is based on a combination of optical lithography and e-beam...
Show moreIn this thesis I present a complete and detailed guide for the development process and fabrication of efficient single-electron transistors (SETs) and a better single-molecule magnets (SMMs) deposition yield. Starting from a commercial Si/SiO2 wafer I show the steps for the deposition of different layers to fabricate a SET as well as the improvements achieved in those for a completely functional SET device. The development process is based on a combination of optical lithography and e-beam lithography with metal deposition in ultra-high vacuum. The improvements involve a better conductance in the Al gate component, with a controlled formation of the superficial oxide layer and a faster feedback electromigration-induced breaking of Au nanowires for the creation of nanogaps at room temperature. The gate component is improved by increasing its thickness and exposing it to plasma oxidation for the complete oxidation of its surface. The nanowire breaking is realized at room temperature to make use of the surface tension of Au, which, after a previous feedback procedure, eventually opens the final gap in the nanowire. Finally, I demonstrate a new technique that allows increasing the yield of having a SMM connected in the nanowire gap. This new technique is based on monitoring the resistance of the broken nanowires during the SMM deposition from a controlled liquid solution at room temperature. When the resistance ((>)G? for open gaps) drops to values below Mega-ohms (characteristic resistance of a molecule bridging the gap) for a number of nanowires in the chip, the device is then ready for low temperature measurements.
Show less - Date Issued
- 2013
- Identifier
- CFE0004742, ucf:49775
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004742
- Title
- Parallel fabrication and transport properties of carbon nanotube single electron transistors.
- Creator
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Islam, Muhammad, Khondaker, Saiful, Chow, Lee, Stolbov, Sergey, Zhai, Lei, University of Central Florida
- Abstract / Description
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Single electron transistors (SET) have attracted significant attention as a potential building block for post CMOS nanoelectronic devices. However, lack of reproducible and parallel fabrication approach and room temperature operation are the two major bottlenecks for practical realization of SET based devices. In this thesis, I demonstrate large scale single electron transistors fabrication techniques using solution processed single wall carbon nanotubes (SWNTs) and studied their electron...
Show moreSingle electron transistors (SET) have attracted significant attention as a potential building block for post CMOS nanoelectronic devices. However, lack of reproducible and parallel fabrication approach and room temperature operation are the two major bottlenecks for practical realization of SET based devices. In this thesis, I demonstrate large scale single electron transistors fabrication techniques using solution processed single wall carbon nanotubes (SWNTs) and studied their electron transport properties. The approach is based on the assembly of individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit and formation of tunnel barriers on SWNT. Two different techniques: i) metal-SWNT Schottky contact, and ii) mechanical templating of SWNTs were used for tunnel barrier creation.Low temperature (4.2K) transport measurement of 100 nm long metal-SWNT Schottky contact devices show that 93% of the devices with contact resistance (RT) (>) 100 K? show SET behavior. Majority (90%) of the devices with 100 K? (<) RT (<) 1 M?, show periodic, well-de?ned Coulomb diamonds with a charging energy ~ 15 meV, represents single electron tunnelling through a single quantum dot (QD), defined by the top contact. For high RT ((>) 1M?), devices show multiple QDs behaviors, while QD was not formed for low RT ((<) 100 K?) devices. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving an yield of 76%. I also demonstrate room temperature operating SET by using mechanical template technique. In mechanical template method individual SWNT is placed on top of a Al/Al2O3 local gate which bends the SWNT at the edge and tunnel barriers are created. SET devices fabricated with a template width of ~20 nm shows room temperature operation with a charging energy of ~150 meV. I also discussed the detailed transport spectroscopy of the devices.
Show less - Date Issued
- 2015
- Identifier
- CFE0006037, ucf:50987
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006037
- Title
- CONTROLLED ASSEMBLY AND ELECTRONIC TRANSPORT STUDIES OF SOLUTION PROCESSED CARBON NANOTUBE DEVICES.
- Creator
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Stokes, Paul, Khondaker, Saiful I., University of Central Florida
- Abstract / Description
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Developing techniques for the parallel fabrication of Complementary Metal Oxide Semiconductor (CMOS) compatible single walled carbon nanotube (SWNT) electronic devices is of great importance for nanoelectronic applications. In this thesis, solution processed SWNTs in combination with AC dielectrophoresis (DEP) were utilized to fabricate CMOS compatible SWNT field effect transistors (FETs) and single electron transistors (SETs) with high yield and their detailed electronic transport properties...
Show moreDeveloping techniques for the parallel fabrication of Complementary Metal Oxide Semiconductor (CMOS) compatible single walled carbon nanotube (SWNT) electronic devices is of great importance for nanoelectronic applications. In this thesis, solution processed SWNTs in combination with AC dielectrophoresis (DEP) were utilized to fabricate CMOS compatible SWNT field effect transistors (FETs) and single electron transistors (SETs) with high yield and their detailed electronic transport properties were studied. Solution processing of SWNTs is attractive not only for the high throughput and parallel manufacturing of SWNT devices but also due to the ease of processing at room temperature, and compatibility with various substrates. However, it is generally believed that solution processing introduces defects and can degrade electronic transport properties. The results presented in this dissertation show that devices assembled from stable solutions of SWNT can give rise to high quality FET devices at room temperature and relatively clean SET behavior at low temperature. This is a strong indication that there are no or few intrinsic defects in the SWNTs. The dissertation will also discuss the controlled fabrication of size tunable SWNT SET devices using a novel mechanical template approach which offers a route towards the parallel fabrication of room temperature SET devices. The approach is based on the formation of two tunnel barriers created in a SWNT a distance L apart by bending the SWNT at the edge of a local Al/Al2O3 bottom gate. The local gate tunes individual electrons one by one in the device and defines the size of the quantum dot though its width. By tuning both the back gate and local gate, it is possible to tune the transparency of tunnel barriers and the size of the quantum dot further. Detailed transport spectroscopy of these devices will be presented.
Show less - Date Issued
- 2010
- Identifier
- CFE0003061, ucf:48310
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003061
- Title
- SINGLE-ELECTRON TRANSPORT SPECTROSCOPY STUDIES OF MAGNETIC MOLECULES AND NANOPARTICLES.
- Creator
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Haque, Md. Firoze, del Barco, Enrique, University of Central Florida
- Abstract / Description
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Magnetic nanoparticles and molecules, in particular ferromagnetic noble metal nanoparticles, molecular magnet and single-molecule magnets (SMM), are perfect examples to investigate the role of quantum mechanics at the nanoscale. For example, SMMs are known to reverse their magnetization by quantum tunneling in the absence of thermal excitation and show a number of fundamental quantum mechanical manifestations, such as quantum interference effects. On the other hand, noble metal nanoparticles...
Show moreMagnetic nanoparticles and molecules, in particular ferromagnetic noble metal nanoparticles, molecular magnet and single-molecule magnets (SMM), are perfect examples to investigate the role of quantum mechanics at the nanoscale. For example, SMMs are known to reverse their magnetization by quantum tunneling in the absence of thermal excitation and show a number of fundamental quantum mechanical manifestations, such as quantum interference effects. On the other hand, noble metal nanoparticles are found to behave ferromagnetically for diameters below a few nanometers. Some of these manifestations are still intriguing, and novel research approaches are necessary to advance towards a more complete understanding of these exciting nanoscale systems. In particular, the ability to study an isolated individual nanoscale system (i.e just one molecule or nanoparticle) is both challenging technologically and fundamentally essential. It is expected that accessing to the energy landscape of an isolated molecule/nanoparticle will allow unprecedented knowledge of the basic properties that are usually masked by collective phenomena when the systems are found in large ensembles or in their crystal form. Several approaches to this problem are currently under development by a number of research groups. For instance, some groups are developing deposition techniques to create patterned thin films of isolated magnetic nanoparticles and molecular magnets by means of optical lithography, low-energy laser ablation, or pulsed-laser evaporation or specific chemical functionalization of metallic surfaces with special molecular ligands. However, it is still a challenge to access the properties of an individual molecule or nanoparticle within a film or substrate. I have studied molecular nanomagnets and ferromagnetic noble metal nanoparticles by means of a novel experimental approach that mixes the chemical functionalization of nano-systems with the use of single-electron transistors (SETs). I have observed the Coulomb-blockade single-electron transport response through magnetic gold nanoparticles and single-molecule magnet. In particular, Coulomb-blockade response of a Mn4-based SET device recorded at 240 mK revealed the appearance of two diamonds (two charge states) with a clear switch between one and the other is indicative of a conformational switching of the molecule between two different states. The excitations inside the diamonds move with magnetic field. The curvature of the excitations and the fact of having them not going down to zero energy for zero magnetic field, indicated the presence of magnetic anisotropy (zero-field splitting) in the molecule. In addition, the high magnetic field slope of the excitations indicates that transitions between charge states differ by a net spin value equal to 9 (dS = 9), as expected from the behavior of Mn4 molecules in their crystalline form. Anticrossings between different excitations are indicative of quantum superpositions of the molecular states, which are observed for the first time in transport measurements through and individual SMM.
Show less - Date Issued
- 2011
- Identifier
- CFE0003718, ucf:48776
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003718
- Title
- Electrostatic control over temperature-dependent tunneling across single-molecule junctions.
- Creator
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Rodriguez Garrigues, Alvar, Del Barco, Enrique, Flitsiyan, Elena, Ishigami, Masa, Hernandez, Eloy, University of Central Florida
- Abstract / Description
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The aim of the present dissertation is to improve the understanding and methodology of temperature-dependent tunnel conduction through individual molecules by single-electron transport spectroscopy. New advances in electrochemistry present individual molecular diodes as a realistic option for the implementation on molecular circuits thanks to their high current rectification ratios. Therefore, a major requisite in this field is to understand and control the conduction behaviors for a large...
Show moreThe aim of the present dissertation is to improve the understanding and methodology of temperature-dependent tunnel conduction through individual molecules by single-electron transport spectroscopy. New advances in electrochemistry present individual molecular diodes as a realistic option for the implementation on molecular circuits thanks to their high current rectification ratios. Therefore, a major requisite in this field is to understand and control the conduction behaviors for a large variety of conditions. This work focuses on the electric conduction through ferrocene-based molecules as a function of temperatures within a wide range of bias and gate voltages by means of three-terminal electromigrated-broken single-electron transistors (SETs).The results show that the temperature dependence of the current (from 80 to 260 K) depends strongly on the bias and gate voltages, with areas in where the current increases exponentially with temperature (at the Coulomb blockade regimes), and others where the increase of the temperature makes the current only to vary slightly (at resonance) or to decrease monotonically (at the charge degeneracy points). These different observed behaviors of the tunneling current with increasing temperatures can be well explained by a formal single-level coherent tunneling model where the temperature dependence relies on the thermal broadening of the Fermi distributions of the electrons in the leads. The model portraits the molecule as a localized electrostatic level capacitively coupled to the transistor leads, and the electrical conduction through the junction as coherent sequential tunneling.
Show less - Date Issued
- 2016
- Identifier
- CFE0006171, ucf:51132
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006171
