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CHARACTERIZATION OF ALUMINUM DOPED ZINC OXIDE THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS
Title
CHARACTERIZATION OF ALUMINUM DOPED ZINC OXIDE THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS.
Creator
Shantheyanda, Bojanna, Kalpathy, Sundaram, University of Central Florida
Abstract / Description
Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the...
Show moreGrowing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCOÂÂ's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film.The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
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Date Issued
2010
Identifier
CFE0003142, ucf:48623
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0003142
Transparent Oxide Semiconductor Gate based MOSFETs for Sensor Applications
Title
Transparent Oxide Semiconductor Gate based MOSFETs for Sensor Applications.
Creator
Saikumar, Ashwin Kumar, Sundaram, Kalpathy, Wu, Thomas, Kapoor, Vikram, University of Central Florida
Abstract / Description
Starting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields.The use of...
Show moreStarting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields.The use of transparent conducting oxide (TCO) in the field of sensor applications has increasedand has been the subject of extensive research. Good electrical properties, good optical properties, wide band gap, portability, easy processing, and low cost has led to the extensive research on TCO for sensor applications.For this research purpose two specific types of sensor applications namely, light sensing and humidity sensing were considered. For this purpose, two sets of metal-oxide-semiconductor field effect transistors (MOSFET) with one set having transparent aluminum doped zinc oxide and the other having indium tin oxide respectively as their gate metal was fabricated. The MOSFETs werefabricated using a four level mask and tested.
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Date Issued
2014
Identifier
CFE0005547, ucf:50297
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0005547