Current Search: cathodoluminescence (x)
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- Title
- Impact of Ionizing Radiation and Electron Injection on Carrier Transport Properties in Narrow and Wide Bandgap Semiconductors.
- Creator
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Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Peale, Robert, Orlovskaya, Nina, University of Central Florida
- Abstract / Description
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This study investigated the minority carrier properties of wide and narrow bandgap semiconductors. Included specifically are wide bandgap materials GaN and ?-Ga2O3, and narrow bandgap InAs/GaSb type-II strain-layer superlattice. The importance of minority carrier behavior in bipolar device performance is utmost because it is the limiting component in current conduction. The techniques used to determine minority carrier properties include electron beam induced current (EBIC) and...
Show moreThis study investigated the minority carrier properties of wide and narrow bandgap semiconductors. Included specifically are wide bandgap materials GaN and ?-Ga2O3, and narrow bandgap InAs/GaSb type-II strain-layer superlattice. The importance of minority carrier behavior in bipolar device performance is utmost because it is the limiting component in current conduction. The techniques used to determine minority carrier properties include electron beam induced current (EBIC) and cathodoluminescence (CL) spectroscopy. The CL spectroscopy is complemented with time-resolved CL (TRCL) for direct measurement of carrier radiative recombination lifetime. The minority carrier properties and effect of high energy radiation is explored. The GaN TRCL results suggested an activation energy effecting carrier lifetime of about 90 meV which is related to nitrogen vacancies. The effects of 60Co gamma radiation are demonstrated and related to the effects of electron injection in GaN-based devices. The effects of various high energy radiations upon Si-doped ?-Ga2O3 minority carrier diffusion length and radiative lifetime are measured. The non-irradiated sample thermal activation energies found for minority carrier diffusion length were 40.9 meV, related to shallow Si-donors in the material. The CL results demonstrate that the bandgap of 4.9 eV is slightly indirect. The thermal activation energy decreased on 1.5 MeV electron irradiation but increased for 10 MeV proton irradiation. The increase in energy was related to higher order defects and their complexes, and influenced recombination lifetime significantly. Finally, the diffusion length is reported for narrow bandgap InAs/GaSb superlattice structure and the effect of 60Co gamma radiation is demonstrated.In general, the defects introduced by high energy radiations decreased minority carrier diffusion length, except for 60Co gamma on AlGaN/GaN HEMT devices and high-temperature proton irradiated ?-Ga2O3.
Show less - Date Issued
- 2018
- Identifier
- CFE0007217, ucf:52239
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007217
- Title
- ELECTRON INJECTION-INDUCED EFFECTS IN III-NITRIDES: PHYSICS AND APPLICATIONS.
- Creator
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Burdett, William Charles, Chernyak, Leonid, University of Central Florida
- Abstract / Description
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This research investigated the effect of electron injection in III-Nitrides. The combination of electron beam induced current and cathodoluminescence measurements was used to understand the impact of electron injection on the minority carrier transport and optical properties. In addition, the application of the electron injection effect in optoelectronic devices was investigated.The impact of electron injection on the minority carrier diffusion length was studied at various temperatures in Mg...
Show moreThis research investigated the effect of electron injection in III-Nitrides. The combination of electron beam induced current and cathodoluminescence measurements was used to understand the impact of electron injection on the minority carrier transport and optical properties. In addition, the application of the electron injection effect in optoelectronic devices was investigated.The impact of electron injection on the minority carrier diffusion length was studied at various temperatures in Mg-doped p-GaN, p-AlxGa1-xN, and p-AlxGa1-x N/GaN superlattices. It was found that the minority carrier diffusion length experienced a multi-fold linear increase and that the rate of change of the diffusion length decreased exponentially with increasing temperature. The effect was attributed to a temperature-activated release of the electrons, which were trapped by the Mg levels.The activation energies for the electron injection effect in the Mg-doped (Al)GaN samples were found to range from 178 to 267 meV, which is close to the thermal ionization energy of the Mg acceptor. The activation energy observed for Al0.15Ga0.85N and Al0.2Ga0.8N was consistent with the deepening of the Mg acceptor level due to the incorporation of Al into the GaN lattice. The activation energy in the homogeneously doped Al0.2Ga0.8N/GaN superlattice indicates that the main contribution to the electron injection effect comes from the capture of injected electrons by the wells (GaN). The electron injection effect was successfully applied to GaN doped with an impurity (Mn) other than Mg. Electron injection into Mn-doped GaN resulted in a multi-fold increase of the minority carrier diffusion length and a pronounced decrease in the band-to-band cathodoluminescence intensity. The activation energy due to the electron injection effect was estimated from temperature-dependent cathodoluminescence measurements to be 360 meV. The decrease in the band-to-band cathodoluminescence is consistent with an increase in the diffusion length and these results are attributed to an increase in the minority carrier lifetime due to the trapping of injected electrons by the Mn levels.A forward bias was applied to inject electrons into commercially built p-i-n and Schottky barrier photodetectors. Up to an order of magnitude increase in the peak (360 nm) responsivity was observed. The enhanced photoresponse lasted for over four weeks and was attributed to an electron injection-induced increase of the minority carrier diffsuion length and the lifetime.
Show less - Date Issued
- 2004
- Identifier
- CFE0000080, ucf:46109
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0000080
- Title
- Radiation Effects on Wide Band Gap Semiconductor Transport Properties.
- Creator
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Schwarz, Casey, Flitsiyan, Elena, Chernyak, Leonid, Peale, Robert, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of...
Show moreIn this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minority carrier diffusion length, L, was shown to increase as it was subjected to increasing temperature as well as continuous electron irradiation. The near-band-edge (NBE) intensity in CL measurements was found to decay as a function of temperature and electron irradiation due to an increase in carrier lifetime. Electron injection through application of a forward bias also resulted in a similar increase of minority carrier diffusion length.Thermal and electron irradiation dependences were used to determine activation energies for the irradiation induced effects. This helps to further our understanding of the electron injection mechanism as well as to identify possible defects responsible for the observed effects. Thermal activation energies likely represent carrier delocalization energy and are related to the increase of diffusion length due to the reduction in recombination efficiency. The effect of electron irradiation on the minority carrier diffusion length and lifetime can be attributed to the trapping of non-equilibrium electrons on neutral acceptor levels. The effect of neutron irradiation on CL intensity can be attributed to an increase in shallow donor concentration. Thermal activation energies resulting from an increase in L or decay of CL intensity monitored through EBIC and CL measurements for p-type Sb doped ZnO were found to be the range of Ea = 112 to 145 meV. P-type Sb doped ZnO nanowires under the influence of temperature and electron injection either through continuous beam impacting or through forward bias, displayed an increase in L and corresponding decay of CL intensity when observed by EBIC or CL measurements. These measurements led to activation energies for the effect ranging from Ea = 217 to 233 meV. These values indicate the possible involvement of a SbZn-2VZn acceptor complex. For N-type unintentionally doped ZnO, CL measurements under the influence of temperature and electron irradiation by continuous beam impacting led to a decrease in CL intensity which resulted in an electron irradiation activation energy of approximately Ea = 259 meV. This value came close to the defect energy level of the zinc interstitial. CL measurements of neutron irradiated ZnO nanostructures revealed that intensity is redistributed in favor of the NBE transition indicating an increase of shallow donor concentration. With annealing contributing to the improvement of crystallinity, a decrease can be seen in the CL intensity due to the increase in majority carrier lifetime. Low energy emission seen from CL spectra can be due to oxygen vacancies and as an indicator of radiation defects.
Show less - Date Issued
- 2012
- Identifier
- CFE0004234, ucf:49018
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004234
- Title
- IMPACT OF GAMMA-IRRADIATION ON THE CHARACTERISTICS OF III-N/GaN BASED HIGH ELECTRON MOBILITY TRANSISTORS.
- Creator
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Yadav, Anupama, Flitsiyan, Elena, Chernyak, Leonid, Peale, Robert, Richie, Samuel, University of Central Florida
- Abstract / Description
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In this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices' transport and optical properties were analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a...
Show moreIn this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices' transport and optical properties were analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a significant role in development and design of radiation resistant semiconductor components for different applications. Electrical testing combined with temperature dependent Electron Beam Induced Current (EBIC) that we used in our investigations, provided critical information on defects induced in the material because of gamma-irradiation. It was shown that low dose (below ~250 Gy) and high doses (above ~250 Gy) of gamma-irradiation affects the AlGaN/GaN HEMTs due to different mechanisms. For low doses of gamma-irradiation, the improvement in minority carrier diffusion length is likely associated with the irradiation-induced growing lifetime of the non-equilibrium carriers. However, with the increased dose of irradiation (above ~ 250 Gy), the concentration of point defects, such as nitrogen vacancies, as well as the complexes involving native defects increases which results in the non-equilibrium carrier scattering. The impact of defect scattering is more pronounced at higher radiation, which leads to the degradation in the mobility and therefore the diffusion length. In addition for each device under investigation, the temperature dependent minority carrier diffusion length measurements were carried out. These measurements allowed the extraction of the activation energy for the temperature-induced enhancement of the minority carrier transport, which (activation energy) bears a signature of defect levels involved the carrier recombination process. Comparing the activation energy before and after gamma-irradiation identified the radiation-induced defect levels and their dependences. To complement EBIC measurements, spatially resolved Cathodoluminescence (CL) measurements were carried out at variable temperatures. Similar to the EBIC measurements, CL probing before and after the gamma-irradiation allowed the identification of possible defect levels generated as a result of gamma-bombardment. The observed decrease in the CL peak intensity after gamma-irradiation provides the direct evidence of the decrease in the number of recombination events. Based on the findings, the decay in the near-band-edge intensity after low-dose of gamma-irradiation (below ~250 Gy) was explained as a consequence of increased non-equilibrium carrier lifetime. For high doses (above ~250 Gy), decay in the CL intensity was observed to be related to the reduction in the mobility of charge carriers. The results of EBIC are correlated with the CL measurements in order to demonstrate that same underlying process is responsible for the changes induced by the gamma-irradiation. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate and drain characteristics. Exposure of AlGaN/GaN HEMTs to high dose of 60Co gamma-irradiation (above ~ 250 Gy) resulted in significant device degradation. Gamma-rays doses up to 1000 Gy are shown to result in positive shift in threshold voltage, a reduction in the drain current and transconductance due to increased trapping of carriers and dispersion of charge. In addition, a significant increase in the gate leakage current was observed in both forward and reverse directions after irradiation. Post-irradiation annealing at relatively low temperature was shown to restore the minority carrier transport as well as the electrical characteristics of the devices. The level of recovery of gamma-irradiated devices after annealing treatment depends on the dose of the irradiation. The devices that show most recovery for a particular annealing temperature are those exposed to the low doses of gamma-irradiation, while those exposed to the highest doses results in no recovery of performance. The latter fact indicates that a higher device annealing temperature is needed for larger doses of gamma-irradiation.
Show less - Date Issued
- 2016
- Identifier
- CFE0006424, ucf:51458
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006424