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(1 - 9 of 9)
- Title
- OPTIMIZATION OF PROCESS PARAMETERS FOR REDUCED THICKNESS CIGSES THIN FILM SOLAR CELLS.
- Creator
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Pethe, Shirish, Dhere, Neelkanth, University of Central Florida
- Abstract / Description
-
With the advent of the 21st century, one of the serious problems facing mankind is harmful effects of global warming. Add to that the ever increasing cost of fuel and the importance of development of clean energy resources as alternative to fossil fuel has becomes one of the prime and pressing challenges for modern science and technology in the 21st century. Recent studies have shown that energy related sources account for 50% of the total emission of carbon dioxide in the atmosphere. All...
Show moreWith the advent of the 21st century, one of the serious problems facing mankind is harmful effects of global warming. Add to that the ever increasing cost of fuel and the importance of development of clean energy resources as alternative to fossil fuel has becomes one of the prime and pressing challenges for modern science and technology in the 21st century. Recent studies have shown that energy related sources account for 50% of the total emission of carbon dioxide in the atmosphere. All research activities are focused on developing various technologies that are capable of converting sunlight into electricity with high efficiency and can be produced using a cost-effective process. One of such technologies is the CuIn1-xGaxSe2 (CIGS) and its alloys that can be produced using cost-effective techniques and also exhibit high photo-conversion efficiency. The work presented here discusses some of the fundamental issues related to high volume production of CIGS thin film solar cells. Three principal issues that have been addressed in this work are effect of reduction in absorber thickness on device performance, micrononuniformity involved with amount of sodium and its effect on device performance and lastly the effect of working distance on the properties of molybdenum back contact. An effort has been made to understand the effect of absorber thickness on PV parameters and optimize the process parameters accordingly. Very thin (<1 µm) absorber film were prepared by selenization using metallorganic selenium source in a conventional furnace and by RTP using Se vapor. Sulfurization was carried out using H2S gas. Devices with efficiencies reaching 9% were prepared for very thin (<1 µm) CIGS and CIGSeS thin films. It was shown through this work that the absorber thickness reduction of 64% results in the efficiency drop of only 32%. With further optimization of the reaction process of the absorber layer as well as the other layers higher efficiencies can be achieved. The effect of sodium on the device performance is experimentally verified in this work. To the best of our knowledge the detrimental effect of excess sodium has been verified by experimental data and effort has been made to correlate the variation in PV parameter to theoretical models of effect of sodium. It has been a regular practice to deposit thin barrier layer prior to molybdenum deposition to reduce the micrononuniformities caused due to nonuniform out diffusion of sodium from the soda lime glass. However, it was proven in this work that an optimally thick barrier layer is necessary to reduce the out diffusion of sodium to negligible quantities and thus reduce the micrononuniformities. Molybdenum back contact deposition is a bottleneck in high volume manufacturing due to the current state of art where multi layer molybdenum film needs to be deposited to achieve the required properties. In order to understand and solve this problem experiments were carried out. The effect of working distance (distance between the target and the substrate) on film properties was studied and is presented in this work. During the course of this work efforts were taken to carry out a systematic and detailed study of some of the fundamental issues related to CIGS technology and particular for high volume manufacturing of CIGS PV modules and lay a good foundation for further improvement of PV performance of CIGS thin film solar cells prepared by the two step process of selenization and sulfurization of sputtered metallic precursors.
Show less - Date Issued
- 2010
- Identifier
- CFE0003517, ucf:48940
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003517
- Title
- PREPARATION OF EFFICIENT CUIN1-XGAXSE2-YSY/CDS THIN-FILM SOLAR CELLS BY OPTIMIZING THE MOLYBDENUM BACK CONTACT AND USING DIETHYLSELENIDE AS SELENIUM PRECURSOR.
- Creator
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Kadam, Ankur, Dhere, Neelkanth, University of Central Florida
- Abstract / Description
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High efficiency CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells were prepared by optimizing the Mo back contact layer and optimizing the parameters for preparing CIGSS absorber layer using diethylselenide as selenium source. The Mo film was sputter deposited on 2.5 cm x 10 cm soda-lime glass using DC magnetron sputtering for studying the adhesion and chemical reactivity with selenium and sulfur containing gas at maximum film growth temperature. Mo being a refractory material develops...
Show moreHigh efficiency CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells were prepared by optimizing the Mo back contact layer and optimizing the parameters for preparing CIGSS absorber layer using diethylselenide as selenium source. The Mo film was sputter deposited on 2.5 cm x 10 cm soda-lime glass using DC magnetron sputtering for studying the adhesion and chemical reactivity with selenium and sulfur containing gas at maximum film growth temperature. Mo being a refractory material develops stresses, nature of which depends on the deposition power and argon pressure. It was found that the deposition sequence with two tensile stressed layers deposited at 200W and 5 x 10-3 Torr argon pressure when sandwiched between three compressively stressed layers deposited at 300 W power and 0.3 x 10-3 Torr argon pressure had the best adhesion, limited reactivity and compact nature. An organo-metallic compound, diethylselenide (DESe) was developed as selenium precursor to prepare CIGSS absorber layers. Metallic precursors Cu-In-Ga layers were annealing in the conventional furnace in the temperature range of 475oC to 515 oC and in the presence of a dilute DESe atmosphere. The films were grown in an indium rich regime. Systematic approaches lead to the optimization of each step involved in the preparation of the absorber layer. Initial experiments were focused on obtaining the range of maximum temperatures required for the growth of the film. The following experiments included optimization of soaking time at maximum temperature, quantity of metallic precursor, and amount of sodium in terms of NaF layer thickness required for selenization. The absorber surface was coated with a 50 to 60 nm thick layer of CdS as hetero-junction partner by chemical bath deposition. A window bi-layer of i:ZnO/ZnO:Al was deposited by RF magnetron sputtering. The thickness of i:ZnO was increased to reduce the shunt resistance to improve open circuit voltage. The cells were completed by depositing a Cr/Ag front contact by thermal evaporation. Efficiencies greater than 13% was achieved on glass substrates. The performance of the cells was co-related with the material properties.
Show less - Date Issued
- 2006
- Identifier
- CFE0001035, ucf:46822
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001035
- Title
- METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS.
- Creator
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Panjwani, Deep, Peale, Robert, University of Central Florida
- Abstract / Description
-
Metal nano particles are investigated as scattering centers on front surface of thin-film solar cells to improve efficiency. The principle is that scattering, which is enhanced near the plasmon resonance frequency of the particle and depends on particle size, increases the effective optical path length of incident light, leading to more light absorption in active layer of thin film solar cell. The particular types of particles investigated here are known as "metal-black", well known as an IR...
Show moreMetal nano particles are investigated as scattering centers on front surface of thin-film solar cells to improve efficiency. The principle is that scattering, which is enhanced near the plasmon resonance frequency of the particle and depends on particle size, increases the effective optical path length of incident light, leading to more light absorption in active layer of thin film solar cell. The particular types of particles investigated here are known as "metal-black", well known as an IR absorber for bolometric infrared detectors. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in a nitrogen ambient at pressures of ~1 Torr. We suggest that the broad range of length scales for gold black particles, as quantified by scanning electron microscopy, gives rise to efficient scattering over a broad range of wavelengths across the solar spectrum. The solar cell efficiency was determined both as a function of wavelength and for a solar spectrum produced by a Xe lamp and appropriate filters. Up to 20% increase in short-circuit photocurrent, and a 7% increase in efficiency at the maximum power point, were observed.
Show less - Date Issued
- 2011
- Identifier
- CFE0004047, ucf:49153
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004047
- Title
- CORRELATION BETWEEN PREPARATION PARAMETERS AND PROPERTIES OF MOLYBDENUM BACK CONTACT LAYER FOR CIGS THIN FILM SOLAR CELLS.
- Creator
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Takahashi, Eigo, Dhere, Neelkanth, University of Central Florida
- Abstract / Description
-
Molybdenum (Mo) thin film back contact layers for thin film CuIn(1-x)GaxSe2 (CIGS) solar cells were deposited onto soda lime glass substrates using a direct current (DC) planar magnetron sputtering deposition technique. Requirements for the Mo thin film as a back contact layer for CIGS solar cells are various. Sheet resistance, contact resistance to the CIGS absorber, optical reflectance, surface morphology, and adhesion to the glass substrate are the most important properties that the Mo...
Show moreMolybdenum (Mo) thin film back contact layers for thin film CuIn(1-x)GaxSe2 (CIGS) solar cells were deposited onto soda lime glass substrates using a direct current (DC) planar magnetron sputtering deposition technique. Requirements for the Mo thin film as a back contact layer for CIGS solar cells are various. Sheet resistance, contact resistance to the CIGS absorber, optical reflectance, surface morphology, and adhesion to the glass substrate are the most important properties that the Mo thin film back contact layer must satisfy. Experiments were carried out under various combinations of sputtering power and working gas pressure, for it is well known that mechanical, morphological, optical, and electrical property of a sputter-deposited Mo thin film are dependent on these process parameters. Various properties of each Mo film were measured and discussed. Sheet resistances were measured using a four-point probe equipment and minimum value of 0.25 Ω/sq was obtained for the 0.6 µm-thick Mo film. Average surface roughnesses of each Mo film ranged from 15 to 26 Å were measured by Dektak profilometer which was also employed to measure film thicknesses. Resistivities were calculated from the sheet resistance and film thickness of each film. Minimum resistivity of 11.9 µΩ∙cm was obtained with the Mo thin film deposited at 0.1 mTorr and 250 W. A residual stress analysis was conducted with a bending beam technique with very thin glass strips, and maximum tensile stress of 358 MPa was obtained; however, films did not exhibit a compressive stress. Adhesive strengths were examined for all films with a ÂÂ"Scotch-tapeÂÂ" test, and all films showed a good adhesion to the glass substrate. Sputter-deposited Mo thin films are commonly employed as a back contact layer for CIGS and CuInSe2 (CIS)-based solar cells; however, there are several difficulties in fabricating a qualified back contact layer. Generally, Mo thin films deposited at higher sputtering power and lower working gas pressure tend to exhibit lower resistivity; however, such films have a poor adhesion to the glass substrate. On the other hand, films deposited at lower power and higher gas pressure tend to have a higher resistivity, whereas the films exhibit an excellent adhesion to the glass substrate. Therefore, it has been a practice to employ multi-layered Mo thin film back contact layers to achieve the properties of good adhesion to the glass substrate and low resistivity simultaneously. However, multi layer processes have a lower throughput and higher fabricating cost, and requires more elaborated equipment compared to single layer processes, which are not desirable from the industrial point of view. As can be seen, above mentioned process parameters and the corresponding Mo thin film properties are at the two extreme ends of the spectrum. Hence experiments were conducted to find out the mechanisms which influence the properties of Mo thin films by changing the two process parameters of working gas pressure and sputtering power individually. The relationships between process parameters and above mentioned properties were studied and explained. It was found that by selecting the process parameters properly, less resistive, appropriate-surfaced, and highly adhesive single layer Mo thin films for CIGS solar cells can be achieved.
Show less - Date Issued
- 2010
- Identifier
- CFE0003031, ucf:48353
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003031
- Title
- STUDY OF THE EFFECTS OF SODIUM AND ABSORBER MICROSTRUCTURE FOR THE DEVELOPMENT OF CUIN1-XGAXSE2-YSY THIN FILM SOLAR CELL USING AN ALTERNATIVE SELENIUM PRECURSOR.
- Creator
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HADAGALI, VINAYKUMAR, DHERE, NEELKANTH, University of Central Florida
- Abstract / Description
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Thin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. CuInGaSe2 thin film solar cells have achieved the highest efficiency among all the thin film technologies. A steady progress has been made in the research and development of CuInSe2 based thin film solar cells. However, there are many issues that need to be addressed for the development of CuInSe2 based thin films solar cells. High price of PV modules has been a biggest...
Show moreThin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. CuInGaSe2 thin film solar cells have achieved the highest efficiency among all the thin film technologies. A steady progress has been made in the research and development of CuInSe2 based thin film solar cells. However, there are many issues that need to be addressed for the development of CuInSe2 based thin films solar cells. High price of PV modules has been a biggest factor impeding the growth of photovoltaic modules for terrestrial application. This thesis tries to address the effects of sodium on the CIGSe and CIGSeS thin film absorbers. A progressive increase in the grain size and the degree of preferred orientation for (112) was observed with the increase in the amount of sodium available during the absorber growth. The distribution of sulfur was also influenced by the microstructure of the film. The increase in the grain size influenced the diffusion of sulfur in the CIGSeS thin film absorber. Deposition of silicon nitride alkali barrier was successfully completed. A new selenium precursor, dimethyl selenide was successfully used for the preparation of CIGSe and CIGSeS thin film solar cells. Systematic approaches lead to the optimization process parameters for the fabrication of the thin films solar cells. CIGSeS thin film solar cell with a reduced thickness of ~2 micron and an efficiency of 9.95% was prepared on sodalime glass substrate. The research presented here proves the potential of dimethyl selenide as selenium precursor to prepare device quality CIGSe absorber. The process can be further optimized to prepare highly efficient absorbers. Electron backscattered diffraction technique was used for first time to analyze the CIGSeS thin film absorbers. Kikuchi patterns and EBSD maps were obtained on the polished CIGSeS thin film absorbers. Grains with various orientations in the EBSD maps were clearly observed. However, it can also be observed that some pixels have not been indexed by the software. This might be due to the departure of crystalline structure of the film from CuInSe2 or the presence of amorphous phases. Data files for indexing and grain orientation of CIGSeS does not exist. However, with the help of lattice parameters and the position of atoms in the base the data file can be created for CIGSeS material.
Show less - Date Issued
- 2009
- Identifier
- CFE0002647, ucf:48192
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0002647
- Title
- EFFECT OF COMPOSITION, MORPHOLOGY AND SEMICONDUCTING PROPERTIES ON THE EFFICIENCY OF CUIN1-XGAXSE2-YSY THIN-FILM SOLAR CELLS PREPARED BY RAPID THERMAL PROCESSING.
- Creator
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Kulkarni, Sachin, Dhere, Neelkanth, University of Central Florida
- Abstract / Description
-
A rapid thermal processing (RTP) reactor for the preparation of graded CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been designed, assembled and is being used at the Photovoltaic Materials Laboratory of the Florida Solar Energy Center. CIGSeS films having the optimum composition, morphology, and semiconducting properties were prepared using RTP. Initially films having various Cu/(In+Ga) ratios were prepared. In the next step selenium incorporation in these films was optimized,...
Show moreA rapid thermal processing (RTP) reactor for the preparation of graded CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been designed, assembled and is being used at the Photovoltaic Materials Laboratory of the Florida Solar Energy Center. CIGSeS films having the optimum composition, morphology, and semiconducting properties were prepared using RTP. Initially films having various Cu/(In+Ga) ratios were prepared. In the next step selenium incorporation in these films was optimized, followed by sulfur incorporation in the surface to increase the bandgap at the surface. The compositional gradient of sulfur was fine-tuned so as to increase the conversion efficiency. Materials properties of these films were characterized by optical microscopy, SEM, AFM, EDS, XRD, GIXRD, AES, and EPMA. The completed cells were extensively studied by electrical characterization. Current-voltage (I-V), external and internal quantum efficiency (EQE and IQE), capacitance-voltage (C-V), and light beam induced current (LBIC) analysis were carried out. Current Density (J)-Voltage (V) curves were obtained at different temperatures. The temperature dependence of the open circuit voltage and fill factor has been estimated. The bandgap value calculated from the intercept of the linear extrapolation was ~1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of ~4.0 x 1015 cm-3. Semiconductor properties analysis of CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been carried out. The values of various PV parameters determined using this analysis were as follows: shunt resistance (Rp) of ~510 Ohms-cm2 under illumination and ~1300 Ohms-cm2 in dark, series resistance (Rs) of ~0.8 Ohms-cm2 under illumination and ~1.7 Ohms-cm2 in dark, diode quality factor (A) of 1.87, and reverse saturation current density (Jo) of 1.5 x 10-7A cm-2. The efficiency of 12.78% obtained during this research is the highest efficiency obtained by any University or National Lab for copper chalcopyrite solar cells prepared by RTP. CIGS2 cells have a better match to the solar spectrum due to their comparatively higher band-gap as compared to CIGS cells. However, they are presently limited to efficiencies below 13% which is considerably lower than that of CIGS cells of 19.9%. One of the reasons for this lower efficiency is the conduction band offset between the CIGS2 absorber layer and the CdS heterojunction partner layer. The band offset value between CIGS2 and CdS was estimated by a combination of ultraviolet photoelectron spectroscopy (UPS) and Inverse Photoemission Spectroscopy (IPES) to be -0.45 eV, i.e. a cliff is present between these two layers, enhancing the recombination at the junction, this limits the efficiency of CIGS2 wide-gap chalcopyrite solar cells.
Show less - Date Issued
- 2008
- Identifier
- CFE0002467, ucf:47728
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0002467
- Title
- CHARACTERIZATION OF MICROSTRUCTURAL AND CHEMICAL FEATURES IN CU-IN-GA-SE-S-BASED THIN-FILM SOLAR CELLS.
- Creator
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Halbe, Ankush, Heinrich, Helge, University of Central Florida
- Abstract / Description
-
Thin-film solar cells are potentially low-cost devices to convert sunlight into electricity. Improvements in the conversion efficiencies of these cells reduce material utilization cost and make it commercially viable. Solar cells from the Thin-Film Physics Group, ETH Zurich, Switzerland and the Florida Solar Energy Center (FSEC), UCF were characterized for defects and other microstructural features within the thin-film structure and at the interfaces using transmission electron microscopy ...
Show moreThin-film solar cells are potentially low-cost devices to convert sunlight into electricity. Improvements in the conversion efficiencies of these cells reduce material utilization cost and make it commercially viable. Solar cells from the Thin-Film Physics Group, ETH Zurich, Switzerland and the Florida Solar Energy Center (FSEC), UCF were characterized for defects and other microstructural features within the thin-film structure and at the interfaces using transmission electron microscopy (TEM). The present thesis aims to provide a feedback to these groups on their deposition processes to understand the correlations between processing, resulting microstructures, and the conversion efficiencies of these devices. Also, an optical equipment measuring photocurrents from a solar cell was developed for the identification of defect-prone regions of a thin-film solar cell. The focused ion beam (FIB) technique was used to prepare TEM samples. Bright-field TEM along with scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) including elemental distribution line scans and maps were extensively used for characterizing the absorber layer and interfaces both above and below the absorber layer. Energy-filtered transmission electron microscopy (EFTEM) was applied in cases where EDS results were inconclusive due to the overlap of X-ray energies of certain elements, especially molybdenum and sulfur. Samples from ETH Zurich were characterized for changes in the CIGS (Cu(In,Ga)Se2) microstructure due to sodium incorporation from soda-lime glass or from a post-deposition treatment with NaF as a function of CIGS deposition temperature. The CIGS-CdS interface becomes smoother and the small columnar CIGS grains close to the Mo back contact disappear with increasing CIGS deposition temperature. At 773 K the two sodium incorporation routes result in large differences in the microstructures with a significantly larger grain size for the samples after post-deposition Na incorporation. Porosity was observed in the absorber layer close to the back contact in the samples from FSEC. The reason for porosity could be materials evaporation in the gallium beam of the FIB or a processing effect. The porosity certainly indicates heterogeneities of the composition of the absorber layer near the back contact. A Mo-Se rich layer (possibly MoSe2) was formed at the interface between CIGS/CIGSS and Mo improving the quality of the junction. Other chemical heterogeneities include un-sulfurized Cu-Ga deposits, residual Se from the selenization/ sulfurization chamber in CIGS2 and the formation of Cu-rich regions which are attributed to decomposition effects in the Ga beam of the FIB. Wavy absorber surfaces were observed for some of the cells with occasional discontinuities in the metal grids. The 50 nm thick CdS layer, however, remained continuous in all the samples under investigation. For a sample with a transparent back contact, a 10 nm Mo layer was deposited on ITO (indium tin oxide) before deposition of the CIGS2 (Cu(In,Ga)S2) layer. EFTEM maps indicate that a MoS2 layer does not form for such a Mo/MoS2-ITO back contact. Instead, absorber layer material diffuses through the thin Mo layer onto the ITO forming two layers of CIGS2 on either side of Mo with different compositions. Furthermore, an optical beam induced current (OBIC) system with micron level resolution was successfully developed and preliminary photocurrent maps were acquired to microscopically identify regions within a thin-film solar cell with undesirable microstructural features. Such a system, when fully operational, will provide the means for the identification of special regions from where samples for TEM analysis can be obtained using the FIB technique to study specifically the defects responsible for local variations in solar cell properties.
Show less - Date Issued
- 2006
- Identifier
- CFE0001022, ucf:46807
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001022
- Title
- CHARACTERIZATION OF ALUMINUM DOPED ZINC OXIDE THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS.
- Creator
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Shantheyanda, Bojanna, Kalpathy, Sundaram, University of Central Florida
- Abstract / Description
-
Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the...
Show moreGrowing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCOÂÂ's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film.The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
Show less - Date Issued
- 2010
- Identifier
- CFE0003142, ucf:48623
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003142
- Title
- Light Trapping in Thin Film Crystalline Silicon Solar Cells.
- Creator
-
Boroumand Azad, Javaneh, Chanda, Debashis, Peale, Robert, Del Barco, Enrique, Flitsiyan, Elena, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
-
This dissertation presents numerical and experimental studies of a unified light trapping approach that is extremely important for all practical solar cells. A 2D hexagonal Bravais lattice diffractive pattern is studied in conjunction with the verification of the reflection mechanisms of single and double layer anti-reflective coatings in the broad range of wavelength 400 nm - 1100 nm. By varying thickness and conformity, we obtained the optimal parameters which minimize the broadband...
Show moreThis dissertation presents numerical and experimental studies of a unified light trapping approach that is extremely important for all practical solar cells. A 2D hexagonal Bravais lattice diffractive pattern is studied in conjunction with the verification of the reflection mechanisms of single and double layer anti-reflective coatings in the broad range of wavelength 400 nm - 1100 nm. By varying thickness and conformity, we obtained the optimal parameters which minimize the broadband reflection from the nanostructured crystalline silicon surface over a wide range of angle 0(&)deg;-65(&)deg;. While the analytical design of broadband, angle independent anti-reflection coatings on nanostructured surfaces remains a scientific challenge, numerical optimization proves a viable alternative, paving the path towards practical implementation of the light trapping solar cells. A 3 (&)#181;m thick light trapping solar cell is modeled in order to predict and maximize combined electron-photon harvesting in ultrathin crystalline silicon solar cells. It is shown that the higher charge carrier generation and collection in this design compensates the absorption and recombination losses and ultimately results in an increase in energy conversion efficiency. Further, 20 (&)#181;m and 100 (&)#181;m thick functional solar cells with the light trapping scheme are studied. The efficiency improvement is observed numerically and experimentally due to photon absorption enhancement in the light trapping cells with respect to a bare cell of same thickness.
Show less - Date Issued
- 2017
- Identifier
- CFE0006936, ucf:51654
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006936
