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CONTROL AND STABILIZATION OF LASER PLASMASOURCES FOR EUV LITHOGRAPHY

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Date Issued:
2007
Abstract/Description:
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources consist of a small (30 μm diameter) droplet which is excited into plasma emitting EUV around 13.5 nm, the industry's chosen wavelength for EUV lithography (EUVL). These sources are the best candidates for the commercialization of EUVL allowing mass production of computer chips with 32 nm or even smaller feature size. However, the biggest challenges which EUV source developers encounter today are the issues of conversion efficiency (CE) and debris.In order to satisfy the technology requirements, the source will need to meet high levels of stability, performance, and lifetime. Our tin-doped droplet plasma has demonstrated high CE and low debris resulting in long lifetime. Long term stability is obtained through the use of novel tracking techniques and active feedback. The laser plasma targeting system combines optical illumination and imaging, droplet technology innovation, advanced electronics, and custom software which act in harmony to provide complete stabilization of the droplets. Thus, a stable, debris-free light source combined with suitable collection optics can provide useful EUV radiation power. Detailed description of the targeting system and the evaluation of the system will be presented.
Title: CONTROL AND STABILIZATION OF LASER PLASMASOURCES FOR EUV LITHOGRAPHY.
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Name(s): Cunado, Jose , Author
Richardson, Martin, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2007
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources consist of a small (30 μm diameter) droplet which is excited into plasma emitting EUV around 13.5 nm, the industry's chosen wavelength for EUV lithography (EUVL). These sources are the best candidates for the commercialization of EUVL allowing mass production of computer chips with 32 nm or even smaller feature size. However, the biggest challenges which EUV source developers encounter today are the issues of conversion efficiency (CE) and debris.In order to satisfy the technology requirements, the source will need to meet high levels of stability, performance, and lifetime. Our tin-doped droplet plasma has demonstrated high CE and low debris resulting in long lifetime. Long term stability is obtained through the use of novel tracking techniques and active feedback. The laser plasma targeting system combines optical illumination and imaging, droplet technology innovation, advanced electronics, and custom software which act in harmony to provide complete stabilization of the droplets. Thus, a stable, debris-free light source combined with suitable collection optics can provide useful EUV radiation power. Detailed description of the targeting system and the evaluation of the system will be presented.
Identifier: CFE0001790 (IID), ucf:47278 (fedora)
Note(s): 2007-08-01
M.S.E.E.
Engineering and Computer Science, School of Electrical Engineering and Computer Science
Masters
This record was generated from author submitted information.
Subject(s): EUVL
conversion efficiency
debris
laser plasma
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0001790
Restrictions on Access: private 2007-07-01
Host Institution: UCF

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