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REDISTRIBUTION OF MANGANESE ION IMPLANTED IN SILICON
| Title: | REDISTRIBUTION OF MANGANESE ION IMPLANTED IN SILICON. |
 25 views 12 downloads |
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| Name(s): |
Shunmugavelu, Arun, Author An, Linan, Committee Chair University of Central Florida, Degree Grantor |
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| Type of Resource: | text | |
| Date Issued: | 2007 | |
| Publisher: | University of Central Florida | |
| Language(s): | English | |
| Abstract/Description: | Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles. | |
| Identifier: | CFE0001909 (IID), ucf:47477 (fedora) | |
| Note(s): |
2007-12-01 M.S. Engineering and Computer Science, Department of Mechanical Materials and Aerospace Engineering Masters This record was generated from author submitted information. |
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| Subject(s): |
ion implantation silicon SIMS |
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| Persistent Link to This Record: | http://purl.flvc.org/ucf/fd/CFE0001909 | |
| Restrictions on Access: | public | |
| Host Institution: | UCF |
