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HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES

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Date Issued:
2008
Abstract/Description:
Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that must be enhanced to improve reliability. This thesis introduces new packaging that is thermally resilient and has reduced mechanical stress from temperature rise that also provides increased circuit lifetime and greater reliability for continued use to 300°C which is within operation ratings of these new semiconductors. The new module is also without problematic wirebonds that lead to a majority of traditional module failures which also introduce parasitic inductance and increase thermal resistance. Resultantly, the module also features a severely reduced form factor in mass and volume.
Title: HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES.
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Name(s): Grummel, Brian, Author
Shen, Z. John, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2008
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that must be enhanced to improve reliability. This thesis introduces new packaging that is thermally resilient and has reduced mechanical stress from temperature rise that also provides increased circuit lifetime and greater reliability for continued use to 300°C which is within operation ratings of these new semiconductors. The new module is also without problematic wirebonds that lead to a majority of traditional module failures which also introduce parasitic inductance and increase thermal resistance. Resultantly, the module also features a severely reduced form factor in mass and volume.
Identifier: CFE0002482 (IID), ucf:47690 (fedora)
Note(s): 2008-12-01
M.S.E.E.
Engineering and Computer Science, School of Electrical Engineering and Computer Science
Masters
This record was generated from author submitted information.
Subject(s): Electronics Packaging
Power Module
High Temperature Electronics
Hybrid Electric Vehicle
Motor Control
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0002482
Restrictions on Access: public
Host Institution: UCF

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