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LASER PLASMA RADIATION STUDIES FOR DROPLET SOURCES IN THE EXTREME ULTRAVIOLET

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Date Issued:
2010
Abstract/Description:
The advancement of laboratory based Extreme Ultraviolet (EUV) radiation has escalated with the desire to use EUV as a source for semiconductor device printing. Laser plasmas based on a mass-limited target concept, developed within the Laser Plasma Laboratory demonstrate a much needed versatility for satisfying rigorous source requirements. This concept produces minimal debris concerns and allows for the attainment of high repetition rates as well as the accommodation of various laser and target configurations. This work demonstrates the generation of EUV radiation by creating laser plasmas from mass-limited targets with indium, tin, and antimony doped droplets. Spectral emission from the laser plasmas is quantified using a flat-field spectrometer. COWAN code oscillator strength predications for each of the dopants were convolved with narrow Gaussian functions creating synthetic spectra for the EUV region between 10 nm - 20 nm. A preliminary comparison was made between the theoretical spectra and experimental results. From this comparison, ion stage transitions for each of the hot dense plasmas generated were assessed.
Title: LASER PLASMA RADIATION STUDIES FOR DROPLET SOURCES IN THE EXTREME ULTRAVIOLET.
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Name(s): Kamtaprasad, Reuvani, Author
Richardson, Martin, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2010
Publisher: University of Central Florida
Language(s): English
Abstract/Description: The advancement of laboratory based Extreme Ultraviolet (EUV) radiation has escalated with the desire to use EUV as a source for semiconductor device printing. Laser plasmas based on a mass-limited target concept, developed within the Laser Plasma Laboratory demonstrate a much needed versatility for satisfying rigorous source requirements. This concept produces minimal debris concerns and allows for the attainment of high repetition rates as well as the accommodation of various laser and target configurations. This work demonstrates the generation of EUV radiation by creating laser plasmas from mass-limited targets with indium, tin, and antimony doped droplets. Spectral emission from the laser plasmas is quantified using a flat-field spectrometer. COWAN code oscillator strength predications for each of the dopants were convolved with narrow Gaussian functions creating synthetic spectra for the EUV region between 10 nm - 20 nm. A preliminary comparison was made between the theoretical spectra and experimental results. From this comparison, ion stage transitions for each of the hot dense plasmas generated were assessed.
Identifier: CFE0003168 (IID), ucf:48597 (fedora)
Note(s): 2010-05-01
M.S.E.E.
Engineering and Computer Science, School of Electrical Engineering and Computer Science
Masters
This record was generated from author submitted information.
Subject(s): EUV
Extreme Ultraviolet
Lithography
Plasma
Laser
Spectrometer
Spectroscopy
Optics
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0003168
Restrictions on Access: private 2011-05-01
Host Institution: UCF

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