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LONG CAVITY QUANTUM DOT LASER DIODE AND MONOLITHIC PASSIVELY MODE-LOCKED OPERATION

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Date Issued:
2010
Abstract/Description:
Advantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented. The dissertation describes the development and the unique characteristics of single QD active layer laser with long cavity. The data are presented on single layer QD laser diodes that reach threshold current densities values of 11.7 A/cm2 in a p-up mounted 2 cm long cavity and as low as 10 A/cm2, with CW output power of 2 W in a p-down mounted 1.6 cm long cavity. The 8.8 A/cm2 in a p-down mounted 2 cm long cavity is reported. To our knowledge the value 8.8 A/cm2 is the lowest threshold current density ever reported for a room temperature laser diode. These single layer QD laser diodes reach an internal loss of ~0.25 cm-1, which is also the lowest ever reported for a room temperature laser diode. These unique characteristics of single layer QD and laser diode size are potentially promising for the monolithic mode-locked laser because of relatively high peak power with a low repetition rate that is on the order of a few GHz, which can be the novel device for external clocking in the optical interconnect applications. In this dissertation, the stable optical pulse train in a 40 µm wide stripe with a repetition rate of 3.75 GHz with 1.1 cm cavity length through the passive mode-locked onto the monolithic two-section device fabricated from this single layer QD laser is observed.
Title: LONG CAVITY QUANTUM DOT LASER DIODE AND MONOLITHIC PASSIVELY MODE-LOCKED OPERATION.
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Name(s): Shavitranuruk, K, Author
Deppe, Dennis, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2010
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Advantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented. The dissertation describes the development and the unique characteristics of single QD active layer laser with long cavity. The data are presented on single layer QD laser diodes that reach threshold current densities values of 11.7 A/cm2 in a p-up mounted 2 cm long cavity and as low as 10 A/cm2, with CW output power of 2 W in a p-down mounted 1.6 cm long cavity. The 8.8 A/cm2 in a p-down mounted 2 cm long cavity is reported. To our knowledge the value 8.8 A/cm2 is the lowest threshold current density ever reported for a room temperature laser diode. These single layer QD laser diodes reach an internal loss of ~0.25 cm-1, which is also the lowest ever reported for a room temperature laser diode. These unique characteristics of single layer QD and laser diode size are potentially promising for the monolithic mode-locked laser because of relatively high peak power with a low repetition rate that is on the order of a few GHz, which can be the novel device for external clocking in the optical interconnect applications. In this dissertation, the stable optical pulse train in a 40 µm wide stripe with a repetition rate of 3.75 GHz with 1.1 cm cavity length through the passive mode-locked onto the monolithic two-section device fabricated from this single layer QD laser is observed.
Identifier: CFE0003145 (IID), ucf:48646 (fedora)
Note(s): 2010-05-01
Ph.D.
Optics and Photonics, College of Optics and Photonics
Doctorate
This record was generated from author submitted information.
Subject(s): Single layer quantum dot
Semiconductor laser
lowest threshold current density
lowest internal optical loss
longest cavity length
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0003145
Restrictions on Access: public
Host Institution: UCF

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