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INVESTIGATION AND TRADE STUDY ON HOT CARRIER RELIABILITY OF THE PHEMT FOR DC AND RF PERFORMANCE

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Date Issued:
2011
Abstract/Description:
A unified study on the hot carrier reliability of the Pseudomorphic High Electron Mobility Transistor (PHEMT) is carried out through Sentaurus Device Simulation, measurement, and physical analyses. A trade study of devices with four various geometries are evaluated for DC and RF performance. The trade-off of DC I-V characteristics, transconductance, and RF parameters versus hot carrier induced gate current is assessed for each device. Ambient temperature variation is also evaluated to observe its impact on hot carrier effects. A commercial grade PHEMT is then evaluated and measured to demonstrate the performance degradation that occurs after a period of operation in an accelerated stress regime-one hour of high drain voltage, low drain current stress. This stress regime and normal operation regime are then modeled through Sentaurus. Output characteristics are shown along with stress mechanisms within the device. Lastly, a means of simulating a PHEMT post-stress is introduced. The approach taken accounts for the activation of dopants near the channel. Post-stress simulation results of DC and RF performance are then investigated.
Title: INVESTIGATION AND TRADE STUDY ON HOT CARRIER RELIABILITY OF THE PHEMT FOR DC AND RF PERFORMANCE.
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Name(s): Steighner, Jason, Author
Yuan, Jiann-Shiun, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2011
Publisher: University of Central Florida
Language(s): English
Abstract/Description: A unified study on the hot carrier reliability of the Pseudomorphic High Electron Mobility Transistor (PHEMT) is carried out through Sentaurus Device Simulation, measurement, and physical analyses. A trade study of devices with four various geometries are evaluated for DC and RF performance. The trade-off of DC I-V characteristics, transconductance, and RF parameters versus hot carrier induced gate current is assessed for each device. Ambient temperature variation is also evaluated to observe its impact on hot carrier effects. A commercial grade PHEMT is then evaluated and measured to demonstrate the performance degradation that occurs after a period of operation in an accelerated stress regime-one hour of high drain voltage, low drain current stress. This stress regime and normal operation regime are then modeled through Sentaurus. Output characteristics are shown along with stress mechanisms within the device. Lastly, a means of simulating a PHEMT post-stress is introduced. The approach taken accounts for the activation of dopants near the channel. Post-stress simulation results of DC and RF performance are then investigated.
Identifier: CFE0003994 (IID), ucf:48659 (fedora)
Note(s): 2011-08-01
M.S.
Engineering and Computer Science, School of Electrical Engineering and Computer Science
Masters
This record was generated from author submitted information.
Subject(s): PHEMT
HEMT
reliability
hot carrier
hot electron
gate current
stress
RF
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0003994
Restrictions on Access: public
Host Institution: UCF

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