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STUDY OF ESD EFFECTS ON RF POWER AMPLIFIERS

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Date Issued:
2011
Abstract/Description:
Today, ESD is a major consideration in the design and manufacture of ICs. ESD problems are increasing in the electronics industry because of the increasing trend toward higher speed and smaller device sizes. There is growing interest in knowing the effects of ESD protection circuit on the performance of semiconductor integrated circuits (ICs) because of the impact it has on core RF circuit performance. This study investigated the impact of ESD protection circuit on RF Power amplifiers. Even though ESD protection for digital circuits has been known for a while, RF-ESD is a challenge. From a thorough literature search on prior art ESD protection circuits, Silicon controlled rectifier was found to be most effective and reliable ESD protection for power amplifier circuit. A SCR based ESD protection was used to protect the power amplifier and a model was developed to gain better understanding of ESD protected power amplifiers. Simulated results were compared and contrasted against theoretically derived equations. A 5.2GHz fully ESD protected Class AB power amplifier was designed and simulated using TSMC 0.18 um technology. Further, the ESD protection circuit was added to a cascoded Class-E power amplifier operating at 5.2 GHz. ADS simulation results were used to analyze the PA's RF performance degradation. Various optimization techniques were used to improve the RF circuit performance.
Title: STUDY OF ESD EFFECTS ON RF POWER AMPLIFIERS.
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Name(s): Narasimha Raju, Divya, Author
Yuan, Jiann, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2011
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Today, ESD is a major consideration in the design and manufacture of ICs. ESD problems are increasing in the electronics industry because of the increasing trend toward higher speed and smaller device sizes. There is growing interest in knowing the effects of ESD protection circuit on the performance of semiconductor integrated circuits (ICs) because of the impact it has on core RF circuit performance. This study investigated the impact of ESD protection circuit on RF Power amplifiers. Even though ESD protection for digital circuits has been known for a while, RF-ESD is a challenge. From a thorough literature search on prior art ESD protection circuits, Silicon controlled rectifier was found to be most effective and reliable ESD protection for power amplifier circuit. A SCR based ESD protection was used to protect the power amplifier and a model was developed to gain better understanding of ESD protected power amplifiers. Simulated results were compared and contrasted against theoretically derived equations. A 5.2GHz fully ESD protected Class AB power amplifier was designed and simulated using TSMC 0.18 um technology. Further, the ESD protection circuit was added to a cascoded Class-E power amplifier operating at 5.2 GHz. ADS simulation results were used to analyze the PA's RF performance degradation. Various optimization techniques were used to improve the RF circuit performance.
Identifier: CFE0003630 (IID), ucf:48881 (fedora)
Note(s): 2011-05-01
M.S.
Engineering and Computer Science, School of Electrical Engineering and Computer Science
Masters
This record was generated from author submitted information.
Subject(s): ESD
RF Power Amplifiers
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0003630
Restrictions on Access: public
Host Institution: UCF

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