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Multiscale simulation of laser ablation and processing of semiconductor materials

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Date Issued:
2012
Abstract/Description:
We present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The potential predicts phonon spectra in good agreement with finite-temperature density-functional theory (DFT), including the lattice instability induced by the high electronic excitations. For 25fs pulse, a wide range of fluence values is simulated resulting in heterogeneous melting, homogenous melting, and ablation. The results presented demonstrate that phase transitions can usually be described by ordinary thermal processes even when the electronic temperature Te is much greater than the lattice temperature TL during the transition. However, the evolution of the system and details of the phase transitions depend strongly on Te and corresponding density of broken bonds. For high enough laser fluence, homogeneous melting is followed by rapid expansion of the superheated liquid and ablation. Rapid expansion of the superheated liquid occurs partly due to the high pressures generated by a high density of broken bonds. As a result, the system is readily driven into the liquid-vapor coexistence region, which initiates phase explosion. The results strongly indicates that phase explosion, generally thought of as an ordinary thermal process, can occur even under strong non-equilibrium conditions when Te (>)(>)TL. In summary, a detailed investigation of laser-solid interactions in silicon is presented for femtosecond laser pulse that yields strong far-from-equilibrium conditions.
Title: Multiscale simulation of laser ablation and processing of semiconductor materials.
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Name(s): Shokeen, Lalit, Author
Schelling, Patrick, Committee Chair
Kar, Aravinda, Committee Member
Vaidyanathan, Rajan, Committee Member
Su, Ming, Committee Member
Kara, Abdelkader, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2012
Publisher: University of Central Florida
Language(s): English
Abstract/Description: We present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The potential predicts phonon spectra in good agreement with finite-temperature density-functional theory (DFT), including the lattice instability induced by the high electronic excitations. For 25fs pulse, a wide range of fluence values is simulated resulting in heterogeneous melting, homogenous melting, and ablation. The results presented demonstrate that phase transitions can usually be described by ordinary thermal processes even when the electronic temperature Te is much greater than the lattice temperature TL during the transition. However, the evolution of the system and details of the phase transitions depend strongly on Te and corresponding density of broken bonds. For high enough laser fluence, homogeneous melting is followed by rapid expansion of the superheated liquid and ablation. Rapid expansion of the superheated liquid occurs partly due to the high pressures generated by a high density of broken bonds. As a result, the system is readily driven into the liquid-vapor coexistence region, which initiates phase explosion. The results strongly indicates that phase explosion, generally thought of as an ordinary thermal process, can occur even under strong non-equilibrium conditions when Te (>)(>)TL. In summary, a detailed investigation of laser-solid interactions in silicon is presented for femtosecond laser pulse that yields strong far-from-equilibrium conditions.
Identifier: CFE0004599 (IID), ucf:49206 (fedora)
Note(s): 2012-12-01
Ph.D.
Engineering and Computer Science, Materials Science Engineering
Doctoral
This record was generated from author submitted information.
Subject(s): simulations -- laser ablation -- semiconductors
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0004599
Restrictions on Access: public 2012-12-15
Host Institution: UCF

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