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Investigation on electrical properties of RF sputtered deposited BCN thin films

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Date Issued:
2013
Abstract/Description:
The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance.Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B(&)#172;4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.
Title: Investigation on electrical properties of RF sputtered deposited BCN thin films.
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Name(s): Prakash, Adithya, Author
Sundaram, Kalpathy, Committee Chair
Yuan, Jiann-Shiun, Committee Member
Lin, Mingjie, Committee Member
, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2013
Publisher: University of Central Florida
Language(s): English
Abstract/Description: The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance.Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B(&)#172;4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.
Identifier: CFE0004912 (IID), ucf:49625 (fedora)
Note(s): 2013-08-01
M.S.E.E.
Engineering and Computer Science, Electrical Engineering and Computer Science
Masters
This record was generated from author submitted information.
Subject(s): BCN -- Thin films -- Inter layer dielectrics (ILD) -- low-k materials -- Electrical Characterization -- Metal-Insulator-Metal (MIM)
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0004912
Restrictions on Access: public 2013-08-15
Host Institution: UCF

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