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Electronic Transport Investigation of Chemically Derived Reduced Graphene Oxide Sheets

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Date Issued:
2012
Abstract/Description:
Reduced graphene oxide (RGO) sheet, a chemically functionalized atomically thin carbon sheet, provides a convenient pathway for producing large quantities of graphene via solution processing. The easy processibility of RGO sheet and its composites offer interesting electronic, chemical and mechanical properties that are currently being explored for advanced electronics and energy based materials. However, a clear understanding of electron transport properties of RGO sheet is lacking which is of great significance for determining its potential application. In this dissertation, I demonstrate fabrication of high-yield solution based graphene field effects transistor (FET) using AC dielectrophoresis (DEP) and investigate the detailed electronic transport properties of the fabricated devices. The majority of the devices show ambipolar FET properties at room temperature. However, the mobility values are found to be lower than pristine graphene due to a large amount of residual defects in RGO sheets. I calculate the density of these defects by analyzing the low temperature (295 to 77K) charge transport data using space charge limited conduction (SCLC) with exponential trap distribution. At very low temperature (down to 4.2 K), I observe Coulomb blockade (CB) and Efros-Shklovskii variable range hopping (ES VRH) conduction in RGO implying that RGO can be considered as a graphene quantum dots (GQD) array, where graphene domains act like QDs while oxidized domains behave like tunnel barriers between QDs. This was further confirmed by studying RGO sheets of varying carbon sp2 fraction from 55 (-) 80 % and found that both the localization length and CB can be tuned. From the localization length and using confinement effect, we estimate tunable band gap of RGO sheets with varying carbon sp2 fraction. I then studied one dimensional RGO nanoribbon (RGONR) and found ES VRH and CB models are also applicable to the RGONR. However, in contrast to linear behavior of decrease in threshold voltage (Vt) with increasing temperature (T) in the RGO, sub linear dependence of Vt on T was observed in RGONR due to reduced transport pathways. Finally, I demonstrate synthesis and transport studies of RGO/nanoparticles (CdS and CeO2) composite and show that the properties of RGO can be further tuned by attaching the nanoparticles.
Title: Electronic Transport Investigation of Chemically Derived Reduced Graphene Oxide Sheets.
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Name(s): Joung, Daeha, Author
Khondaker, Saiful, Committee Chair
Chow, Lee, Committee Member
Leuenberger, Michael, Committee Member
Zhai, Lei, Committee Member
, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2012
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Reduced graphene oxide (RGO) sheet, a chemically functionalized atomically thin carbon sheet, provides a convenient pathway for producing large quantities of graphene via solution processing. The easy processibility of RGO sheet and its composites offer interesting electronic, chemical and mechanical properties that are currently being explored for advanced electronics and energy based materials. However, a clear understanding of electron transport properties of RGO sheet is lacking which is of great significance for determining its potential application. In this dissertation, I demonstrate fabrication of high-yield solution based graphene field effects transistor (FET) using AC dielectrophoresis (DEP) and investigate the detailed electronic transport properties of the fabricated devices. The majority of the devices show ambipolar FET properties at room temperature. However, the mobility values are found to be lower than pristine graphene due to a large amount of residual defects in RGO sheets. I calculate the density of these defects by analyzing the low temperature (295 to 77K) charge transport data using space charge limited conduction (SCLC) with exponential trap distribution. At very low temperature (down to 4.2 K), I observe Coulomb blockade (CB) and Efros-Shklovskii variable range hopping (ES VRH) conduction in RGO implying that RGO can be considered as a graphene quantum dots (GQD) array, where graphene domains act like QDs while oxidized domains behave like tunnel barriers between QDs. This was further confirmed by studying RGO sheets of varying carbon sp2 fraction from 55 (-) 80 % and found that both the localization length and CB can be tuned. From the localization length and using confinement effect, we estimate tunable band gap of RGO sheets with varying carbon sp2 fraction. I then studied one dimensional RGO nanoribbon (RGONR) and found ES VRH and CB models are also applicable to the RGONR. However, in contrast to linear behavior of decrease in threshold voltage (Vt) with increasing temperature (T) in the RGO, sub linear dependence of Vt on T was observed in RGONR due to reduced transport pathways. Finally, I demonstrate synthesis and transport studies of RGO/nanoparticles (CdS and CeO2) composite and show that the properties of RGO can be further tuned by attaching the nanoparticles.
Identifier: CFE0004785 (IID), ucf:49743 (fedora)
Note(s): 2012-12-01
Ph.D.
Sciences, Physics
Doctoral
This record was generated from author submitted information.
Subject(s): graphene -- graphene oxide -- field effect transistor -- electron transport
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0004785
Restrictions on Access: campus 2014-06-15
Host Institution: UCF

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