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Transparent Oxide Semiconductor Gate based MOSFETs for Sensor Applications
- Date Issued:
- 2014
- Abstract/Description:
- Starting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields.The use of transparent conducting oxide (TCO) in the field of sensor applications has increasedand has been the subject of extensive research. Good electrical properties, good optical properties, wide band gap, portability, easy processing, and low cost has led to the extensive research on TCO for sensor applications.For this research purpose two specific types of sensor applications namely, light sensing and humidity sensing were considered. For this purpose, two sets of metal-oxide-semiconductor field effect transistors (MOSFET) with one set having transparent aluminum doped zinc oxide and the other having indium tin oxide respectively as their gate metal was fabricated. The MOSFETs werefabricated using a four level mask and tested.
Title: | Transparent Oxide Semiconductor Gate based MOSFETs for Sensor Applications. |
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Name(s): |
Saikumar, Ashwin Kumar, Author Sundaram, Kalpathy, Committee Chair Wu, Thomas, Committee Member Kapoor, Vikram, Committee Member University of Central Florida, Degree Grantor |
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Type of Resource: | text | |
Date Issued: | 2014 | |
Publisher: | University of Central Florida | |
Language(s): | English | |
Abstract/Description: | Starting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields.The use of transparent conducting oxide (TCO) in the field of sensor applications has increasedand has been the subject of extensive research. Good electrical properties, good optical properties, wide band gap, portability, easy processing, and low cost has led to the extensive research on TCO for sensor applications.For this research purpose two specific types of sensor applications namely, light sensing and humidity sensing were considered. For this purpose, two sets of metal-oxide-semiconductor field effect transistors (MOSFET) with one set having transparent aluminum doped zinc oxide and the other having indium tin oxide respectively as their gate metal was fabricated. The MOSFETs werefabricated using a four level mask and tested. | |
Identifier: | CFE0005547 (IID), ucf:50297 (fedora) | |
Note(s): |
2014-12-01 M.S.E.E. Engineering and Computer Science, Electrical Engr and Comp Sci Masters This record was generated from author submitted information. |
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Subject(s): | MOSFET -- TCO -- ITO -- Al-Doped ZnO -- Light sensor | |
Persistent Link to This Record: | http://purl.flvc.org/ucf/fd/CFE0005547 | |
Restrictions on Access: | public 2014-12-15 | |
Host Institution: | UCF |