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HIGH QUALITY GATE DIELECTRIC/MoS2 INTERFACES PROBED BY THE CONDUCTANCE METHOD

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Date Issued:
2018
Abstract/Description:
Two-dimensional materials provide a versatile platform for various electronic and optoelectronic devices, due to their uniform thickness and pristine surfaces. We probe the superior quality of 2D/2D and 2D/3D interfaces by fabricating molybdenum disulfide (MoS2)-based field effect transistors having hexagonal boron nitride (h-BN) and Al2O3 as the top gate dielectrics. An extremely low trap density of ~7x10^10 states/cm2-eV is extracted at the 2D/2D interfaces with h-BN as the top gate dielectric on the MoS2 channel. 2D/3D interfaces with Al2O3 as the top gate dielectric and SiOx as the nucleation layer exhibit trap densities between 7x10^10 and 10^11 states/cm2-eV, which is lower than previously reported 2D-channel/high-k-dielectric interface trap densities. The comparable values of trap time constants for both interfaces imply that similar types of defects contribute to the interface traps. This work establishes the case for van der Waals systems where the superior quality of 2D/2D and 2D/high-k dielectric interfaces can produce high performance electronic and optoelectronic devices.
Title: HIGH QUALITY GATE DIELECTRIC/MoS2 INTERFACES PROBED BY THE CONDUCTANCE METHOD.
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Name(s): Krishnaprasad Sharada, Adithi Pandrahal, Author
Roy, Tania, Committee Chair
Abdolvand, Reza, Committee CoChair
Yuan, Jiann-Shiun, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2018
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Two-dimensional materials provide a versatile platform for various electronic and optoelectronic devices, due to their uniform thickness and pristine surfaces. We probe the superior quality of 2D/2D and 2D/3D interfaces by fabricating molybdenum disulfide (MoS2)-based field effect transistors having hexagonal boron nitride (h-BN) and Al2O3 as the top gate dielectrics. An extremely low trap density of ~7x10^10 states/cm2-eV is extracted at the 2D/2D interfaces with h-BN as the top gate dielectric on the MoS2 channel. 2D/3D interfaces with Al2O3 as the top gate dielectric and SiOx as the nucleation layer exhibit trap densities between 7x10^10 and 10^11 states/cm2-eV, which is lower than previously reported 2D-channel/high-k-dielectric interface trap densities. The comparable values of trap time constants for both interfaces imply that similar types of defects contribute to the interface traps. This work establishes the case for van der Waals systems where the superior quality of 2D/2D and 2D/high-k dielectric interfaces can produce high performance electronic and optoelectronic devices.
Identifier: CFE0007214 (IID), ucf:52209 (fedora)
Note(s): 2018-08-01
M.S.E.E.
Engineering and Computer Science, Electrical Engineering and Computer Engineering
Masters
This record was generated from author submitted information.
Subject(s): 2D materials -- MoS2 -- hBN -- density of interface traps -- conductance method
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0007214
Restrictions on Access: public 2018-08-15
Host Institution: UCF

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