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Room Temperature Operation of Quantum Cascade Lasers Monolithically Integrated Onto a Lattice-Mismatched Substrate

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Date Issued:
2018
Abstract/Description:
The experimental results of a 40-stage indium phosphide (InP) based quantum cascade laser (QCL) grown on a lattice-mismatched gallium arsenide (GaAs) substrate with metamorphic buffer (M-buffer) will be discussed. The QCL's strain-balanced active region was composed of Al0.78In0.22As/In0.73Ga0.27As and an 8 (&)#181;m-thick all-InP waveguide. Since the M-buffer was insulating, the wafer was processed into ridge-waveguide chips with lateral current injection scheme. Laser chips with high reflection (HR) coating delivered total peak power in excess of 200 mW at cryogenic temperature (78 K), and lasing was observed up to 230 K. Partial HR coating was then utilized on the front facet to extend lasing range up to 303 K. After 200 minutes of preliminary reliability testing at maximum power, no sign of performance degradation was observed. Initial results of InP-based QCL on germanium-coated silicon substrate with M-buffer will also be covered in this work.
Title: Room Temperature Operation of Quantum Cascade Lasers Monolithically Integrated Onto a Lattice-Mismatched Substrate.
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Name(s): Go, Rowel, Author
Lyakh, Arkadiy, Committee Chair
Delfyett, Peter, Committee Member
Likamwa, Patrick, Committee Member
Wu, Shintson, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2018
Publisher: University of Central Florida
Language(s): English
Abstract/Description: The experimental results of a 40-stage indium phosphide (InP) based quantum cascade laser (QCL) grown on a lattice-mismatched gallium arsenide (GaAs) substrate with metamorphic buffer (M-buffer) will be discussed. The QCL's strain-balanced active region was composed of Al0.78In0.22As/In0.73Ga0.27As and an 8 (&)#181;m-thick all-InP waveguide. Since the M-buffer was insulating, the wafer was processed into ridge-waveguide chips with lateral current injection scheme. Laser chips with high reflection (HR) coating delivered total peak power in excess of 200 mW at cryogenic temperature (78 K), and lasing was observed up to 230 K. Partial HR coating was then utilized on the front facet to extend lasing range up to 303 K. After 200 minutes of preliminary reliability testing at maximum power, no sign of performance degradation was observed. Initial results of InP-based QCL on germanium-coated silicon substrate with M-buffer will also be covered in this work.
Identifier: CFE0007568 (IID), ucf:52564 (fedora)
Note(s): 2018-08-01
M.S.
Optics and Photonics, Optics and Photonics
Masters
This record was generated from author submitted information.
Subject(s): Quantum Cascade Laser -- Monolithically Integrated -- Lattice Mismatched -- Silicon -- Gallium Arsenide -- Indium Phosphide
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0007568
Restrictions on Access: campus 2020-02-15
Host Institution: UCF

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