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Chemistry and(&)nbsp;Structure of Ru/SiO2(&)nbsp;and Ru/Al2O3 Interfaces

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Date Issued:
2019
Abstract/Description:
The resistivity size effect in nanoscale metals is of both scientific and technological interest, the latter due to its importance to interconnects between transistors in integrated circuits. In this work we report the variation of resistivity associated with surface scattering of ex-situ annealed single crystal Ru thin films grown on sapphire substrates by sputter deposition. A set of samples were overcoated with dielectric and subjected to a variety of reducing and oxidizing anneals. The changes in the chemistry and structure of the dielectric interface induced by the anneals, as determined by x-ray reflectivity and x-ray photoelectron spectroscopy measurements, are related to the changes in the specularity of the surface for electron scattering in the context of the Fuchs-Sondheimer semi-classical model of the resistivity size effect.
Title: Chemistry and(&)nbsp;Structure of Ru/SiO2(&)nbsp;and Ru/Al2O3 Interfaces.
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Name(s): Ezzat, Sameer, Author
Campiglia, Andres, Committee Chair
Coffey, Kevin, Committee CoChair
Zou, Shengli, Committee Member
Frazer, Andrew, Committee Member
Harper, James, Committee Member
Coffey, Kevin, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2019
Publisher: University of Central Florida
Language(s): English
Abstract/Description: The resistivity size effect in nanoscale metals is of both scientific and technological interest, the latter due to its importance to interconnects between transistors in integrated circuits. In this work we report the variation of resistivity associated with surface scattering of ex-situ annealed single crystal Ru thin films grown on sapphire substrates by sputter deposition. A set of samples were overcoated with dielectric and subjected to a variety of reducing and oxidizing anneals. The changes in the chemistry and structure of the dielectric interface induced by the anneals, as determined by x-ray reflectivity and x-ray photoelectron spectroscopy measurements, are related to the changes in the specularity of the surface for electron scattering in the context of the Fuchs-Sondheimer semi-classical model of the resistivity size effect.
Identifier: CFE0007454 (IID), ucf:52727 (fedora)
Note(s): 2019-05-01
Ph.D.
Sciences, Chemistry
Doctoral
This record was generated from author submitted information.
Subject(s): Ru thin films -- Ru interfaces -- Specularity -- resistivity
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0007454
Restrictions on Access: campus 2020-05-15
Host Institution: UCF

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