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Chemical Vapor Deposition Growth of Large Area 2D MoS2 Layers: Layer Orientation Control, Heterostructure Integration, And Applications for Stretchable Sensors.

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Date Issued:
2019
Abstract/Description:
Two-dimensional (2D)-layered MoS2 layers have exhibited a broad set of unusual and superior material properties unattainable in any traditional bulk materials, drawing significant research interests nowadays. For instance, they present excellent semiconducting properties accompanying high carrier mobility and large current ON/OFF ratio as well as extensive in-plane strain limit and thickness, projecting high suitably for emerging flexible and stretchable electronics. Such properties and applications strongly depend on the physical orientation and chemical composition of constituent 2D layers. 2D MoS2 layers chemically grown in two distinct orientations, e.g., horizontal alignment for electronics and optoelectronics, and vertical alignment for electrochemical and sensing applications. Moreover, 2D heterostructure layers composed of vertically stacked dissimilar 2D TMDs held via weak van der Waals (vdW) attractions offer unique 2D/2D interfaces, envisioned to display exotic material properties, unattainable in their monocomponent counterparts. However, the underlying principle of their layer orientation-controlled growth and integrations are not well suited for scalable production, leaving their projected technological opportunities far from being realized for various novel applications. Herein, I study various aspects of 2D MoS2 layers that were studied from their large-area layer-orientation controlled growth and heterostructures integration to applications in stretchable electronic devices. I developed a chemical vapor deposition (CVD) synthesis, which can grow large-area ((>) cm2) 2D MoS2 layers in a layer-controlled manner and investigated their underlying growth mechanism. I then developed a viable transfer approach of the as-grown 2D layers and integrated them into secondary target substrates to realize a new type of 2D MoS2-layers based heterostructures. To further extend their layer-controlled CVD growth and integration approach, a high-performance stretchable 2D MoS2-based electrical sensors were demonstrated on the elastomeric substrates with unconventional structural layouts. This study paves the way to explore this emerging atomically-thin material in realizing a wide range of unusual device and technologies which have been foreseen to be impossible otherwise.
Title: Chemical Vapor Deposition Growth of Large Area 2D MoS2 Layers: Layer Orientation Control, Heterostructure Integration, And Applications for Stretchable Sensors.
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Name(s): Islam, Md. Ashraful, Author
Jung, YeonWoong, Committee Chair
Sundaram, Kalpathy, Committee Member
Yuan, Jiann-Shiun, Committee Member
Roy, Tania, Committee Member
Cho, Hyoung Jin, Committee Member
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2019
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Two-dimensional (2D)-layered MoS2 layers have exhibited a broad set of unusual and superior material properties unattainable in any traditional bulk materials, drawing significant research interests nowadays. For instance, they present excellent semiconducting properties accompanying high carrier mobility and large current ON/OFF ratio as well as extensive in-plane strain limit and thickness, projecting high suitably for emerging flexible and stretchable electronics. Such properties and applications strongly depend on the physical orientation and chemical composition of constituent 2D layers. 2D MoS2 layers chemically grown in two distinct orientations, e.g., horizontal alignment for electronics and optoelectronics, and vertical alignment for electrochemical and sensing applications. Moreover, 2D heterostructure layers composed of vertically stacked dissimilar 2D TMDs held via weak van der Waals (vdW) attractions offer unique 2D/2D interfaces, envisioned to display exotic material properties, unattainable in their monocomponent counterparts. However, the underlying principle of their layer orientation-controlled growth and integrations are not well suited for scalable production, leaving their projected technological opportunities far from being realized for various novel applications. Herein, I study various aspects of 2D MoS2 layers that were studied from their large-area layer-orientation controlled growth and heterostructures integration to applications in stretchable electronic devices. I developed a chemical vapor deposition (CVD) synthesis, which can grow large-area ((>) cm2) 2D MoS2 layers in a layer-controlled manner and investigated their underlying growth mechanism. I then developed a viable transfer approach of the as-grown 2D layers and integrated them into secondary target substrates to realize a new type of 2D MoS2-layers based heterostructures. To further extend their layer-controlled CVD growth and integration approach, a high-performance stretchable 2D MoS2-based electrical sensors were demonstrated on the elastomeric substrates with unconventional structural layouts. This study paves the way to explore this emerging atomically-thin material in realizing a wide range of unusual device and technologies which have been foreseen to be impossible otherwise.
Identifier: CFE0007820 (IID), ucf:52812 (fedora)
Note(s): 2019-12-01
Ph.D.
Engineering and Computer Science, Electrical and Computer Engineering
Doctoral
This record was generated from author submitted information.
Subject(s): 2D materials -- TMD -- MoS2/WS2 -- van der Waals heterostructure -- layer transfer -- flexible device -- humidity sensor -- gas sensor
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0007820
Restrictions on Access: campus 2020-12-15
Host Institution: UCF

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