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PROCESS DEVELOPMENT FOR THE FABRICATION OF MESOSCALE ELECTROSTATIC VALVE ASSEMBLY
| Title: | PROCESS DEVELOPMENT FOR THE FABRICATION OF MESOSCALE ELECTROSTATIC VALVE ASSEMBLY. |
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| Name(s): |
Dhru, Shailini, Author Sundaram, Kalpathy, Committee Chair University of Central Florida, Degree Grantor |
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| Type of Resource: | text | |
| Date Issued: | 2007 | |
| Publisher: | University of Central Florida | |
| Language(s): | English | |
| Abstract/Description: | This study concentrates on two of the main processes involved in the fabrication of electrostatic valve assembly, thick resist photolithography and wet chemical etching of a polyamide film. The electrostatic valve has different orifice diameters of 25, 50, 75 and 100 μm. These orifice holes are to be etched in the silicon wafer with deep reactive ion etching. The photolithography process is developed to build a mask of 15 μm thick resist pattern on silicon wafer. This photo layer acts as a mask for deep reactive ion etching. Wet chemical etching process is developed to etch kapton polyamide film. This etched film is used as a stand off, gap between two electrodes of the electrostatic valve assembly. The criterion is to develop the processed using standard industry tools. Pre post etch effects, such as, surface roughness, etching pattern, critical dimensions on the samples are measured with Veeco profilometer. | |
| Identifier: | CFE0001828 (IID), ucf:47347 (fedora) | |
| Note(s): |
2007-08-01 M.S. Engineering and Computer Science, Other Masters This record was generated from author submitted information. |
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| Subject(s): |
Fabrication Cryogenic Photolithography Photoresist Wet Etching Deep Reactive Ion Etching Kapton Polyamide Profilometer |
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| Persistent Link to This Record: | http://purl.flvc.org/ucf/fd/CFE0001828 | |
| Restrictions on Access: | public | |
| Host Institution: | UCF |
