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REDISTRIBUTION OF MANGANESE ION IMPLANTED IN SILICON

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Date Issued:
2007
Abstract/Description:
Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.
Title: REDISTRIBUTION OF MANGANESE ION IMPLANTED IN SILICON.
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Name(s): Shunmugavelu, Arun, Author
An, Linan, Committee Chair
University of Central Florida, Degree Grantor
Type of Resource: text
Date Issued: 2007
Publisher: University of Central Florida
Language(s): English
Abstract/Description: Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.
Identifier: CFE0001909 (IID), ucf:47477 (fedora)
Note(s): 2007-12-01
M.S.
Engineering and Computer Science, Department of Mechanical Materials and Aerospace Engineering
Masters
This record was generated from author submitted information.
Subject(s): ion implantation
silicon
SIMS
Persistent Link to This Record: http://purl.flvc.org/ucf/fd/CFE0001909
Restrictions on Access: public
Host Institution: UCF

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