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(1 - 11 of 11)
- Title
- Wearable Passive Wireless MEMS Respiration Sensor.
- Creator
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Moradian, Sina, Abdolvand, Reza, Sundaram, Kalpathy, Kapoor, Vikram, University of Central Florida
- Abstract / Description
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In this study a passive sensor that wirelessly monitors the profile of the human respiratory system is presented. The sensor was designed to be wearable, weighs less than 10 grams and is durable. The sensor is made of a RF piezoelectric MEMS resonator and an ultra-high frequency antenna made of a thin metal film formed on a flexible substrate . The resonance frequency of the TPoS resonator shifts as a function of condensation and evaporation of water vapor on the surface of the resonator and...
Show moreIn this study a passive sensor that wirelessly monitors the profile of the human respiratory system is presented. The sensor was designed to be wearable, weighs less than 10 grams and is durable. The sensor is made of a RF piezoelectric MEMS resonator and an ultra-high frequency antenna made of a thin metal film formed on a flexible substrate . The resonance frequency of the TPoS resonator shifts as a function of condensation and evaporation of water vapor on the surface of the resonator and changes in resonator's temperature. These parameters change in each in response to inspiration and expiration and a wireless measurement system detects the frequency shift of the sensor and converts it into the respiration profile. The respiration profile of a healthy human subject is measured and presented for a transmitter to sensor to receiver distance of ~25cm.
Show less - Date Issued
- 2017
- Identifier
- CFE0006628, ucf:51279
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006628
- Title
- Work Function Extraction of Indium Tin Oxide Used As Transparent Gate Electrode For MOSFET.
- Creator
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Nehate, Shraddha, Sundaram, Kalpathy, Kapoor, Vikram, Yuan, Jiann-Shiun, University of Central Florida
- Abstract / Description
-
Recent commercialization has peaked interest in transparent conducting oxides being implemented in display technology. Indium Tin Oxide (ITO) is a popular transparent conducting oxide which has been utilized as high work function electrode in liquid crystal displays, solar cells, gas sensors and heat reflecting films. Indium Tin Oxide films exhibit excellent transmission characteristics in the visible and infrared spectrum while maintaining high electrical conductivity. High work function...
Show moreRecent commercialization has peaked interest in transparent conducting oxides being implemented in display technology. Indium Tin Oxide (ITO) is a popular transparent conducting oxide which has been utilized as high work function electrode in liquid crystal displays, solar cells, gas sensors and heat reflecting films. Indium Tin Oxide films exhibit excellent transmission characteristics in the visible and infrared spectrum while maintaining high electrical conductivity. High work function electrodes are used to inject holes into organic materials. In majority applications the ITO work function has an impact on the device performance as it affects the energy barrier height at the hetero-junction interface. Hence, the work function of ITO is of critical importance.In this thesis, the work function of ITO is extracted successfully from a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device for the first time. Two MOSFET devices are fabricated using a four level mask under exact same conditions. Aluminum metal is used as a drain and source contact for both MOSFETs. One of the MOSFET has aluminum gate contact and transparent conducting ITO is used as gate contact for the second MOSFET. From the threshold voltage equation of both the fabricated MOSFETs, work function of ITO is extracted. Further optical transmission studies of ITO performed in the visible spectra are also reported in this study.
Show less - Date Issued
- 2016
- Identifier
- CFE0006364, ucf:51534
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006364
- Title
- LDMOS Power Transistor Design and Evaluation using 2D and 3D Device Simulation.
- Creator
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Salih, Aiman, Yuan, Jiann-Shiun, Sundaram, Kalpathy, Kapoor, Vikram, University of Central Florida
- Abstract / Description
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The benefit of the super-junction (SJ) technique and the use of a floating P layer for low voltage (30 V) laterally double-diffused metal oxide semiconductor (LDMOS) transistors are investigated in this thesis using Sentaurus TCAD simulation software. Optimizations to the SJ LDMOS were attempted such as adding a buffer layer to the device, but simulation and theoretical evidence point out that the benefits of the SJ technique are marginal at the 30 V application. A replacement for the SJ...
Show moreThe benefit of the super-junction (SJ) technique and the use of a floating P layer for low voltage (30 V) laterally double-diffused metal oxide semiconductor (LDMOS) transistors are investigated in this thesis using Sentaurus TCAD simulation software. Optimizations to the SJ LDMOS were attempted such as adding a buffer layer to the device, but simulation and theoretical evidence point out that the benefits of the SJ technique are marginal at the 30 V application. A replacement for the SJ technique was sought, the floating P structure proved to be a good solution at the low voltage range due to its simpler cost effective process and performance gains achieved with optimization. A new idea of combining the floating P layer with shallow trench isolation is simulated yielding a low figure of merit (on state resistance (&)#215; gate charge) of 5.93 m?-nC.
Show less - Date Issued
- 2017
- Identifier
- CFE0006955, ucf:51673
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006955
- Title
- Transparent Oxide Semiconductor Gate based MOSFETs for Sensor Applications.
- Creator
-
Saikumar, Ashwin Kumar, Sundaram, Kalpathy, Wu, Thomas, Kapoor, Vikram, University of Central Florida
- Abstract / Description
-
Starting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields.The use of...
Show moreStarting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields.The use of transparent conducting oxide (TCO) in the field of sensor applications has increasedand has been the subject of extensive research. Good electrical properties, good optical properties, wide band gap, portability, easy processing, and low cost has led to the extensive research on TCO for sensor applications.For this research purpose two specific types of sensor applications namely, light sensing and humidity sensing were considered. For this purpose, two sets of metal-oxide-semiconductor field effect transistors (MOSFET) with one set having transparent aluminum doped zinc oxide and the other having indium tin oxide respectively as their gate metal was fabricated. The MOSFETs werefabricated using a four level mask and tested.
Show less - Date Issued
- 2014
- Identifier
- CFE0005547, ucf:50297
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005547
- Title
- Investigation of different dielectric materials as gate insulator for MOSFETs.
- Creator
-
Oswal, Ritika, Sundaram, Kalpathy, Kapoor, Vikram, Wahid, Parveen, University of Central Florida
- Abstract / Description
-
The scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the silicon dioxide layer is reduced to increase the gate capacitance, thus increasing the drain current. If the thickness of the gate dielectric decreases below 2nm, the leakage current due to the tunneling increases drastically. Hence it is necessary to replace the gate dielectric, silicon dioxide, with a physically thicker oxide layer of high-k...
Show moreThe scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the silicon dioxide layer is reduced to increase the gate capacitance, thus increasing the drain current. If the thickness of the gate dielectric decreases below 2nm, the leakage current due to the tunneling increases drastically. Hence it is necessary to replace the gate dielectric, silicon dioxide, with a physically thicker oxide layer of high-k materials like Hafnium oxide and Titanium oxide. High-k dielectric materials allow the capacitance to increase without a huge leakage current. Hafnium oxide and Titanium oxide films are deposited by reactive magnetron sputtering from Hafnium and Titanium targets respectively. These oxide layers are used to create metal-insulator-metal (MIM) structures using aluminum as the top and bottom electrodes. The films are deposited at various O2/Ar gas flow ratios, substrate temperatures, and process pressures. After attaining an exact recipe for these oxide layers that exhibit the desired parameters, MOS capacitors are fabricated with n-Si and p-Si substrates having aluminum electrodes at the top and bottom of each. Comparing the parameters of Hafnium oxide- and Titanium oxide- based MOS capacitors, MOSFET devices are designed with Hafnium oxide as gate dielectric.
Show less - Date Issued
- 2014
- Identifier
- CFE0005226, ucf:50612
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005226
- Title
- Design and Implementation of Silicon-Based MEMS Resonators for Application in Ultra Stable High Frequency Oscillators.
- Creator
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Shahraini, Sarah, Abdolvand, Reza, Gong, Xun, Sundaram, Kalpathy, Kapoor, Vikram, Rajaraman, Swaminathan, University of Central Florida
- Abstract / Description
-
The focus of this work is to design and implement resonators for ultra-stable high-frequency ((>)100MHz) silicon-based MEMS oscillators. Specifically, two novel types of resonators are introduced that push the performance of silicon-based MEMS resonators to new limits. Thin film Piezoelectric-on-Silicon (TPoS) resonators have been shown to be suitable for oscillator applications due to their combined high quality factor, coupling efficiency, power handling and doping-dependent temperature...
Show moreThe focus of this work is to design and implement resonators for ultra-stable high-frequency ((>)100MHz) silicon-based MEMS oscillators. Specifically, two novel types of resonators are introduced that push the performance of silicon-based MEMS resonators to new limits. Thin film Piezoelectric-on-Silicon (TPoS) resonators have been shown to be suitable for oscillator applications due to their combined high quality factor, coupling efficiency, power handling and doping-dependent temperature-frequency behavior. This thesis is an attempt to utilize the TPoS platform and optimize it for extremely stable high-frequency oscillator applications.To achieve the said objective, two main research venues are explored. Firstly, quality factor is systematically studied and anisotropy of single crystalline silicon (SCS) is exploited to enable high-quality factor side-supported radial-mode (aka breathing mode) TPoS disc resonators through minimization of anchor-loss. It is then experimentally demonstrated that in TPoS disc resonators with tethers aligned to [100], unloaded quality factor improves from ~450 for the second harmonic mode at 43 MHz to ~11,500 for the eighth harmonic mode at 196 MHz. Secondly, thickness quasi-Lam(&)#233; modes are studied and demonstrated in TPoS resonators for the first time. It is shown that thickness quasi-Lam(&)#233; modes (TQLM) could be efficiently excited in silicon with very high quality factor (Q). A quality factor of 23.2 k is measured in vacuum at 185 MHz for a fundamental TQLM-TPoS resonators designed within a circular acoustic isolation frame. Quality factor of 12.6 k and 6 k are also measured for the second- and third- harmonic TQLM TPoS resonators at 366 MHz and 555 MHz respectively. Turn-over temperatures between 40 (&)deg;C to 125 (&)deg;C are also designed and measured for TQLM TPoS resonators fabricated on degenerately N-doped silicon substrates. The reported extremely high quality factor, very low motional resistance, and tunable turn-over temperatures (>)80 (&)#186;C make these resonators a great candidate for ultra-stable oven-controlled high-frequency MEMS oscillators.
Show less - Date Issued
- 2019
- Identifier
- CFE0007861, ucf:52775
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007861
- Title
- GaN Power Devices: Discerning Application-Specific Challenges and Limitations in HEMTs.
- Creator
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Binder, Andrew, Yuan, Jiann-Shiun, Sundaram, Kalpathy, Roy, Tania, Kapoor, Vikram, Chow, Lee, University of Central Florida
- Abstract / Description
-
GaN power devices are typically used in the 600 V market, for high efficiency, high power-density systems. For these devices, the lateral optimization of gate-to-drain, gate, and gate-to-source lengths, as well as gate field-plate length are critical for optimizing breakdown voltage and performance. This work presents a systematic study of lateral scaling optimization for high voltage devices to minimize figure of merit and maximize breakdown voltage. In addition, this optimization is...
Show moreGaN power devices are typically used in the 600 V market, for high efficiency, high power-density systems. For these devices, the lateral optimization of gate-to-drain, gate, and gate-to-source lengths, as well as gate field-plate length are critical for optimizing breakdown voltage and performance. This work presents a systematic study of lateral scaling optimization for high voltage devices to minimize figure of merit and maximize breakdown voltage. In addition, this optimization is extended for low voltage devices ((<) 100 V), presenting results to optimize both lateral features and vertical features. For low voltage design, simulation work suggests that breakdown is more reliant on punch-through as the primary breakdown mechanism rather than on vertical leakage current as is the case with high-voltage devices. A fabrication process flow has been developed for fabricating Schottky-gate, and MIS-HEMT structures at UCF in the CREOL cleanroom. The fabricated devices were designed to validate the simulation work for low voltage GaN devices. The UCF fabrication process is done with a four layer mask, and consists of mesa isolation, ohmic recess etch, an optional gate insulator layer, ohmic metallization, and gate metallization. Following this work, the fabrication process was transferred to the National Nano Device Laboratories (NDL) in Hsinchu, Taiwan, to take advantage of the more advanced facilities there. Following fabrication, a study has been performed on defect induced performance degradation, leading to the observation of a new phenomenon: trap induced negative differential conductance (NDC). Typically NDC is caused by self-heating, however by implementing a substrate bias test in conjunction with pulsed I-V testing, the NDC seen in our fabricated devices has been confirmed to be from buffer traps that are a result of poor channel carrier confinement during the dc operating condition.
Show less - Date Issued
- 2019
- Identifier
- CFE0007885, ucf:52786
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007885
- Title
- X-ray Radiation Enabled Cancer Detection and Treatment with Nanoparticles.
- Creator
-
Hossain, Mainul, Su, Ming, Behal, Aman, Gong, Xun, Hu, Haiyan, Kapoor, Vikram, Deng, Weiwei, University of Central Florida
- Abstract / Description
-
Despite significant improvements in medical sciences over the last decade, cancer still continues to be a major cause of death in humans throughout the world. Parallel to the efforts of understanding the intricacies of cancer biology, researchers are continuously striving to develop effective cancer detection and treatment strategies. Use of nanotechnology in the modern era opens up a wide range of possibilities for diagnostics, therapies and preventive measures for cancer management....
Show moreDespite significant improvements in medical sciences over the last decade, cancer still continues to be a major cause of death in humans throughout the world. Parallel to the efforts of understanding the intricacies of cancer biology, researchers are continuously striving to develop effective cancer detection and treatment strategies. Use of nanotechnology in the modern era opens up a wide range of possibilities for diagnostics, therapies and preventive measures for cancer management. Although, existing strategies of cancer detection and treatment, using nanoparticles, have been proven successful in case of cancer imaging and targeted drug deliveries, they are often limited by poor sensitivity, lack of specificity, complex sample preparation efforts and inherent toxicities associated with the nanoparticles, especially in case of in-vivo applications. Moreover, the detection of cancer is not necessarily integrated with treatment. X-rays have long been used in radiation therapy to kill cancer cells and also for imaging tumors inside the body using nanoparticles as contrast agents. However, X-rays, in combination with nanoparticles, can also be used for cancer diagnosis by detecting cancer biomarkers and circulating tumor cells. Moreover, the use of nanoparticles can also enhance the efficacy of X-ray radiation therapy for cancer treatment.This dissertation describes a novel in vitro technique for cancer detection and treatment using X-ray radiation and nanoparticles. Surfaces of synthesized metallic nanoparticles have been modified with appropriate ligands to specifically target cancer cells and biomarkers in vitro. Characteristic X-ray fluorescence signals from the X-ray irradiated nanoparticles are then used for detecting the presence of cancer. The method enables simultaneous detection of multiple cancer biomarkers allowing accurate diagnosis and early detection of cancer. Circulating tumor cells, which are the primary indicators of cancer metastasis, have also been detected where the use of magnetic nanoparticles allows enrichment of rare cancer cells prior to detection. The approach is unique in that it integrates cancer detection and treatment under one platform, since, X-rays have been shown to effectively kill cancer cells through radiation induced DNA damage. Due to high penetrating power of X-rays, the method has potential applications for in vivo detection and treatment of deeply buried cancers in humans. The effect of nanoparticle toxicity on multiple cell types has been investigated using conventional cytotoxicity assays for both unmodified nanoparticles as well as nanoparticles modified with a variety of surface coatings. Appropriate surface modifications have significantly reduced inherent toxicity of nanoparticles, providing possibilities for future clinical applications. To investigate cellular damages caused by X-ray radiation, an on-chip biodosimeter has been fabricated based on three dimensional microtissues which allows direct monitoring of responses to X-ray exposure for multiple mammalian cell types. Damage to tumor cells caused by X-rays is known to be significantly higher in presence of nanoparticles which act as radiosensitizers and enhance localized radiation doses. An analytical approach is used to investigate the various parameters that affect the radiosensitizing properties of the nanoparticles. The results can be used to increase the efficacy of nanoparticle aided X-ray radiation therapy for cancer treatment by appropriate choice of X-ray beam energy, nanoparticle size, material composition and location of nanoparticle with respect to the tumor cell nucleus.
Show less - Date Issued
- 2012
- Identifier
- CFE0004547, ucf:49242
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004547
- Title
- Deposition and characterization studies of boron carbon nitride (BCN) thin films prepared by dual target sputtering.
- Creator
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Prakash, Adithya, Sundaram, Kalpathy, Kapoor, Vikram, Yuan, Jiann-Shiun, Jin, Yier, Chow, Louis, University of Central Florida
- Abstract / Description
-
As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems related to circuit performance such as critical path signal delay are becoming a pressing issue. These delays are a result of resistance and capacitance product (RC time constant) of the interconnect circuit. A novel material with reduced dielectric constants may compromise both the thermal and mechanical properties that can lead to die cracking during package and other reliability issues. Boron...
Show moreAs complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems related to circuit performance such as critical path signal delay are becoming a pressing issue. These delays are a result of resistance and capacitance product (RC time constant) of the interconnect circuit. A novel material with reduced dielectric constants may compromise both the thermal and mechanical properties that can lead to die cracking during package and other reliability issues. Boron carbon nitride (BCN) compounds have been expected to combine the excellent properties of boron carbide (B4C), boron nitride (BN) and carbon nitride (C3N4), with their properties adjustable, depending on composition and structure. BCN thin film is a good candidate for being hard, dense, pore-free, low-k dielectric with values in the range of 1.9 to 2.1. Excellent mechanical properties such as adhesion, high hardness and good wear resistance have been reported in the case of sputtered BCN thin films. Problems posed by high hardness materials such as diamonds in high cutting applications and the comparatively lower hardness of c-BN gave rise to the idea of a mixed phase that can overcome these problems with a minimum compromise in its properties. A hybrid between semi-metallic graphite and insulating h-BN may show adjusted semiconductor properties. BCN exhibits the potential to control optical bandgap (band gap engineering) by atomic composition, hence making it a good candidate for electronic and photonic devices. Due to tremendous bandgap engineering capability and refractive index variability in BCN thin film, it is feasible to develop filters and mirrors for use in ultra violet (UV) wavelength region. It is of prime importance to understand process integration challenges like deposition rates, curing, and etching, cleaning and polishing during characterization of low-k films. The sputtering technique provides unique advantages over other techniques such as freedom to choose the substrate material and a uniform deposition over relatively large area. BCN films are prepared by dual target reactive magnetron sputtering from a B4C and BN targets using DC and RF powers respectively. In this work, an investigation of mechanical, optical, chemical, surface and device characterizations is undertaken. These holistic and thorough studies, will provide the insight into the capability of BCN being a hard, chemically inert, low-k, wideband gap material, as a potential leader in semiconductor and optics industry.
Show less - Date Issued
- 2016
- Identifier
- CFE0006378, ucf:51496
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006378
- Title
- The Effect of Morphology on Reflectance in Silicon Nanowires Grown by Electroless Etching.
- Creator
-
Velez, Victor, Sundaram, Kalpathy, Kapoor, Vikram, Yuan, Jiann-Shiun, Abdolvand, Reza, Kar, Aravinda, University of Central Florida
- Abstract / Description
-
The strong light trapping properties of Silicon Nanowires have attracted much interest in the past few years for the conversion of sun energy into conventional electricity. Studies have been completed for many researchers to reduce the cost of fabrication and reflectance of solar light in these nanostructures to make a cheaper and more efficient solar cell technology by using less equipment for fabrication and employing different materials and solution concentrations. Silver, a conducting and...
Show moreThe strong light trapping properties of Silicon Nanowires have attracted much interest in the past few years for the conversion of sun energy into conventional electricity. Studies have been completed for many researchers to reduce the cost of fabrication and reflectance of solar light in these nanostructures to make a cheaper and more efficient solar cell technology by using less equipment for fabrication and employing different materials and solution concentrations. Silver, a conducting and stable metal is used these days as a precursor to react with silicon and then form the nanowires. Its adequate selection of solution concentration for a size of silicon substrate and the treatment for post-cleaning of silver dendrites make it a viable method among the others. It is an aim of this research to obtain significant low reflectance across the visible solar light range. Detailed concentration, fabrication and reflectance studies is carried out on silicon wafer in order to expand knowledge and understanding.In this study, electroless etching technique has been used as the growth mechanism of SiNWs at room temperature. Optimum ratios of solution concentration and duration for different sizes of exposed area to grow tall silicon nanowires derived from experimentation are presented. Surface imaging of the structures and dimension of length and diameter have been determined by Scanner Electron Microscopy (SEM) and the reflectance in the optical range in silicon nanowires has been make using UV-Visible Spectrophotometer.
Show less - Date Issued
- 2017
- Identifier
- CFE0006815, ucf:51807
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006815
- Title
- Integrated Microwave Resonator/Antenna Structures for Sensor and Filter Applications.
- Creator
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Cheng, Haitao, Gong, Xun, Wahid, Parveen, Wu, Thomas, Kapoor, Vikram, An, Linan, University of Central Florida
- Abstract / Description
-
This dissertation presents design challenges and promising solutions for temperature and pressure sensors which are highly desirable for harsh-environment applications, such as turbine engines. To survive the harsh environment consisting of high temperatures above 1000oC, high pressures around 300 psi, and corrosive gases, the sensors are required to be robust both electrically and mechanically. In addition, wire connection of the sensors is a challenging packaging problem, which remains...
Show moreThis dissertation presents design challenges and promising solutions for temperature and pressure sensors which are highly desirable for harsh-environment applications, such as turbine engines. To survive the harsh environment consisting of high temperatures above 1000oC, high pressures around 300 psi, and corrosive gases, the sensors are required to be robust both electrically and mechanically. In addition, wire connection of the sensors is a challenging packaging problem, which remains unresolved as of today. In this dissertation, robust ceramic sensors are demonstrated for both high temperature and pressure measurements. Also, the wireless sensors are achieved based on microwave resonators.Two types of temperature sensors are realized using integrated resonator/antennas and reflective patches, respectively. Both types of the sensors utilize alumina substrate which has a temperature-dependent dielectric constant. The temperature in the harsh environment is wirelessly detected by measuring the resonant frequency of the microwave resonator, which is dependent on the substrate permittivity. The integrated resonator/antenna structure minimizes the sensor dimension by adopting a seamless design between the resonator sensor and antenna. This integration technique can be also used to achieve an antenna array integrated with cavity filters. Alternatively, the aforementioned reflective patch sensor works simultaneously as a resonator sensor and a radiation element. Due to its planar structure, the reflective patch sensor is easy for design and fabrication. Both temperature sensors are measured above 1000oC.A pressure sensor is also demonstrated for high-temperature applications. Pressure is detected via the change in resonant frequency of an evanescent-mode resonator which corresponds to cavity deformation under gas pressure. A compact sensor size is achieved with a post loading the cavity resonator and a low-profile antenna connecting to the sensor. Polymer-Derived-Ceramic (PDC) is developed and used for the sensor fabrication. The pressure sensor is characterized under various pressures at high temperatures up to 800oC. In addition, to facilitate sensor characterizations, a robust antenna is developed in order to wirelessly interrogate the sensors. This specially-developed antenna is able to survive a record-setting temperature of 1300oC.
Show less - Date Issued
- 2014
- Identifier
- CFE0005473, ucf:50335
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005473
