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Title: LASER METALLIZATION AND DOPING FOR SILICON CARBIDE DIODE FABRICATION AND ENDOTAXY.
Creator: Tian, Zhaoxu, Kar, Aravinda, University of Central Florida
Abstract / Description: Silicon carbide is a promising semiconductor material for high voltage, high frequency and high temperature devices due to its wide bandgap, high breakdown electric field strength, highly saturated drift velocity of electrons and outstanding thermal conductivity. With the aim of overcoming some challenges in metallization and doping during the fabrication of silicon carbide devices, a novel laser-based process is provided to direct metallize the surface of silicon carbide without metal...
Show moreSilicon carbide is a promising semiconductor material for high voltage, high frequency and high temperature devices due to its wide bandgap, high breakdown electric field strength, highly saturated drift velocity of electrons and outstanding thermal conductivity. With the aim of overcoming some challenges in metallization and doping during the fabrication of silicon carbide devices, a novel laser-based process is provided to direct metallize the surface of silicon carbide without metal deposition and dope in silicon carbide without high temperature annealing, as an alternative to the conventional ion implantation, and find applications of this laser direct write metallization and doping technique on the fabrication of diodes, endotaxial layer and embedded optical structures on silicon carbide wafers. Mathematical models have been presented for the temperature distributions in the wafer during laser irradiation to optimize laser process parameters and understand the doping and metallization mechanisms in laser irradiation process. Laser irradiation of silicon carbide in a dopant-containing ambient allows to simultaneously heating the silicon carbide surface without melting and incorporating dopant atoms into the silicon carbide lattice. The process that dopant atoms diffuse into the bulk silicon carbide by laser-induced solid phase diffusion (LISPD) can be explained by considering the laser enhanced substitutional and interstitial diffusion mechanisms. Nitrogen and Trimethyaluminum (TMA) are used as dopants to produce n-type and p-type doped silicon carbide, respectively. Two laser doping methods, i.e., internal heating doping and surface heating doping are presented in this dissertation. Deep (800 nm doped junction for internal heating doping) and shallow (200 nm and 450 nm doped junction for surface heating doping) can be fabricated by different doping methods. Two distinct diffusion regions, near-surface and far-surface regions, were identified in the dopant concentration profiles, indicating different diffusion mechanisms in these two regions. The effective diffusion coefficients of nitrogen and aluminum were determined for both regions by fitting the diffusion equation to the measured concentration profiles. The calculated diffusivities are at least 6 orders of magnitude higher than the typical values for nitrogen and aluminum, which indicate that laser doping process enhances the diffusion of dopants in silicon carbide significantly. No amorphization was observed in laser-doped samples eliminating the need for high temperature annealing. Laser direct metallization can be realized on the surface of silicon carbide by generating metal-like conductive phases due to the decomposition of silicon carbide. The ohmic property of the laser direct metallized electrodes can be dramatically improved by fabricating such electrodes on laser heavily doped SiC substrate. This laser-induced solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectroscopic analysis shows that the thickness of endolayer is about 100 nm. High resolution transmission electron microscopic images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. Rutherford backscattering studies also show no amorphization and evident lattice disorder occur during this laser solid phase diffusion process. The resistivity of the endolayer formed in a 1.55 omega•cm silicon carbide wafer segment was found to be 1.1E5 omega•cm which is sufficient for device fabrication and isolation. Annealing at 1000 oC for 10 min to remove hydrogen resulted in a resistivity of 9.4E4 omega•cm. Prototype silicon carbide PIN diodes have been fabricated by doping the endolayer and parent silicon carbide epilayer with aluminum using this laser-induced solid phase diffusion technique to create p-regions on the top surfaces of the substrates. Laser direct metallized contacts were also fabricated on selected PIN diodes to show the effectiveness of these contacts. The results show that the PIN diode fabricated on a 30 nm thick endolayer can block 18 V, and the breakdown voltages and the forward voltages drop at 100 A/cm2 of the diodes fabricated on 4H-SiC with homoepilayer are 420 ~ 500 V and 12.5 ~ 20 V, respectively. The laser direct metallization and doping technique can also be used to synthesize embedded optical structures, which can increase 40% reflectivity compared to the parent wafer, showing potential for the creation of optical, electro-optical, opto-electrical, sensor devices and other integrated structures that are stable in high temperature, high-pressure, corrosive environments and deep space applications.
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Date Issued: 2006
Identifier: CFE0001061, ucf:46803
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001061

Title: ANNULAR BEAM SHAPING AND OPTICAL TREPANNING.
Creator: Zeng, Danyong, Kar, Aravinda, University of Central Florida
Abstract / Description: Percussion drilling and trepanning are two laser drilling methods. Percussion drilling is accomplished by focusing the laser beam to approximately the required diameter of the hole, exposing the material to one or a series of laser pulses at the same spot to melt and vaporize the material. Drilling by trepanning involves cutting a hole by rotating a laser beam with an optical element or an x–y galvo-scanner. Optical trepanning is a new laser drilling method using an annular beam. The...
Show morePercussion drilling and trepanning are two laser drilling methods. Percussion drilling is accomplished by focusing the laser beam to approximately the required diameter of the hole, exposing the material to one or a series of laser pulses at the same spot to melt and vaporize the material. Drilling by trepanning involves cutting a hole by rotating a laser beam with an optical element or an x–y galvo-scanner. Optical trepanning is a new laser drilling method using an annular beam. The annular beams allow numerous irradiance profiles to supply laser energy to the workpiece and thus provide more flexibility in affecting the hole quality than a traditional circular laser beam. Heating depth is important for drilling application. Since there are no good ways to measure the temperature inside substrate during the drilling process, an analytical model for optical trepanning has been developed by considering an axisymmetric, transient heat conduction equation, and the evolutions of the melting temperature isotherm, which is referred to as the melt boundary in this study, are calculated to investigate the influences of the laser pulse shapes and intensity profiles on the hole geometry. This mathematical model provides a means of understanding the thermal effect of laser irradiation with different annular beam shapes. To take account of conduction in the solid, vaporization and convection due to the melt flow caused by an assist gas, an analytical two-dimensional model is developed for optical trepanning. The influences of pulse duration, laser pulse length, pulse repetition rate, intensity profiles and beam radius are investigated to examine their effects on the recast layer thickness, hole depth and taper. The ray tracing technique of geometrical optics is employed to design the necessary optics to transform a Gaussian laser beam into an annular beam of different intensity profiles. Such profiles include half Gaussian with maximum intensities at the inner and outer surfaces of the annulus, respectively, and full Gaussian with maximum intensity within the annulus. Two refractive arrangements have been presented in this study. Geometric optics, or ray optics, describes light propagation in terms of rays. However, it is a simplification of optics, and fails to account for many important optical effects such as diffraction and polarization. The diffractive behaviors of this optical trepanning system are stimulated and analyzed based on the Fresnel diffraction integral. Diffraction patterns of the resulting optical system are measured using a laser beam analyzer and compared with the theoretical results. Based on the theoretical and experimental results, the effects of experimental parameters are discussed. We have designed the annular beam shaping optical elements and the gas delivery system to construct an optical trepanning system. Laser drilling experiments are performed on the Stainless Steel-316 (SS 316) plate and the Inconel 718 (IN 718) plate. The geometry of the trepanning holes with different sizes is presented in this study.
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Date Issued: 2006
Identifier: CFE0001333, ucf:46965
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001333

Title: LASER ENHANCED DOPING FOR SILICON CARBIDE WHITE LIGHTEMITTING DIODES.
Creator: Bet, Sachin, Kar, Aravinda, University of Central Florida
Abstract / Description: This work establishes a solid foundation for the use of indirect band gap semiconductors for light emitting application and presents the work on development of white light emitting diodes (LEDs) in silicon carbide (SiC). Novel laser doping has been utilized to fabricate white light emitting diodes in 6H-SiC (n-type N) and 4H-SiC (p-type Al) wafers. The emission of different colors to ultimately generate white light is tailored on the basis of donor acceptor pair (DAP) recombination mechanism...
Show moreThis work establishes a solid foundation for the use of indirect band gap semiconductors for light emitting application and presents the work on development of white light emitting diodes (LEDs) in silicon carbide (SiC). Novel laser doping has been utilized to fabricate white light emitting diodes in 6H-SiC (n-type N) and 4H-SiC (p-type Al) wafers. The emission of different colors to ultimately generate white light is tailored on the basis of donor acceptor pair (DAP) recombination mechanism for luminescence. A Q-switched Nd:YAG pulse laser (1064 nm wavelength) was used to carry out the doping experiments. The p and n regions of the white SiC LED were fabricated by laser doping an n-type 6H-SiC and p-type 4H-SiC wafer substrates with respective dopants. Cr, B and Al were used as p-type dopants (acceptors) while N and Se were used as n-type dopants (donors). Deep and shallow donor and acceptor impurity level states formed by these dopants tailor the color properties for pure white light emission. The electromagnetic field of lasers and non-equilibrium doping conditions enable laser doping of SiC with increased dopant diffusivity and enhanced solid solubility. A thermal model is utilized to determine the laser doping parameters for temperature distribution at various depths of the wafer and a diffusion model is presented including the effects of Fick's diffusion, laser electromagnetic field and thermal stresses due to localized laser heating on the mass flux of dopant atoms. The dopant diffusivity is calculated as a function of temperature at different depths of the wafer based on measured dopant concentration profile. The maximum diffusivities achieved in this study are 4.6110-10 cm2/s at 2898 K and 6.9210-12 cm2/s at 3046 K for Cr in 6H-SiC and 4H-SiC respectively. Secondary ion mass spectrometric (SIMS) analysis showed the concentration profile of Cr in SiC having a penetration depth ranging from 80 nm in p-type 4H-SiC to 1.5 m in n-type 6H-SiC substrates respectively. The SIMS data revealed enhanced solid solubility (2.291019 cm-3 in 6H-SiC and 1.421919 cm-3 in 4H-SiC) beyond the equilibrium limit (31017 cm-3 in 6H-SiC above 2500 C) for Cr in SiC. It also revealed similar effects for Al and N. The roughness, surface chemistry and crystalline integrity of the doped sample were examined by optical interferometer, energy dispersive X-ray spectrometry (EDS) and transmission electron microscopy (TEM) respectively. Inspite of the larger atomic size of Cr compared to Si and C, the non-equilibrium conditions during laser doping allow effective incorporation of dopant atoms into the SiC lattice without causing any damage to the surface or crystal lattice. Deep Level Transient Spectroscopy (DLTS) confirmed the deep level acceptor state of Cr with activation energies of Ev+0.80 eV in 4H-SiC and Ev+0.45 eV in 6H-SiC. The Hall Effect measurements showed the hole concentration to be 1.981019 cm-3 which is almost twice the average Cr concentration (11019 cm-3) obtained from the SIMS data. These data confirmed that almost all of the Cr atoms were completely activated to the double acceptor state by the laser doping process without requiring any subsequent annealing step. Electroluminescence studies showed blue (460-498 nm), blue-green (500-520 nm) green (521-575 nm), and orange (650-690 nm) wavelengths due to radiative recombination transitions between donor-acceptors pairs of N-Al, N-B, N-Cr and Cr-Al respectively, while a prominent violet (408 nm) wavelength was observed due to transitions from the nitrogen level to the valence band level. The red (698-738 nm) luminescence was mainly due to metastable mid-bandgap states, however under high injection current it was due to the quantum mechanical phenomenon pertaining to band broadening and overlapping. This RGB combination produced a broadband white light spectrum extending from 380 to 900 nm. The color space tri-stimulus values for 4H-SiC doped with Cr and N were X = 0.3322, Y = 0.3320 and Z = 0.3358 as per 1931 CIE (International Commission on Illumination) corresponding to a color rendering index of 96.56 and the color temperature of 5510 K. And for 6H-SiC n-type doped with Cr and Al, the color space tri-stimulus values are X = 0.3322, Y = 0.3320 and Z = 0.3358. The CCT was 5338 K, which is very close to the incandescent lamp (or black body) and lies between bright midday sun (5200 K) and average daylight (5500 K) while CRI was 98.32. Similar white LED's were also fabricated using Cr, Al, Se as one set of dopants and B, Al, N as another.
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Date Issued: 2008
Identifier: CFE0002362, ucf:47808
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002362

Title: THERMAL MODELING AND LASER BEAM SHAPING FOR MICROVIAS DRILLING IN HIGH DENSITY PACKAGING.
Creator: Zhang, Chong, Kar, Aravinda, University of Central Florida
Abstract / Description: Laser drilling of microvias for organic packaging applications is studied in present research. Thermal model is essential to understand the laser-materials interactions and to control laser drilling of blind micro holes through polymeric dielectrics in multilayer electronic substrates. In order to understand the profile of the drilling front irradiated with different laser beam profiles, a transient heat conduction model including vaporization parameters is constructed. The absorption length...
Show moreLaser drilling of microvias for organic packaging applications is studied in present research. Thermal model is essential to understand the laser-materials interactions and to control laser drilling of blind micro holes through polymeric dielectrics in multilayer electronic substrates. In order to understand the profile of the drilling front irradiated with different laser beam profiles, a transient heat conduction model including vaporization parameters is constructed. The absorption length in the dielectric is also considered in this model. Therefore, the volumetric heating source criteria are applied in the model and the equations are solved analytically. The microvia drilling speed, temperature distribution in the dielectric and the thickness of the residue along the microvia walls and at the bottom of the microvia are studied for different laser irradiation conditions. An overheated metastable state of material is found to exist inside the workpiece. The overheating parameters are calculated for various laser drilling parameters and are used to predict the onset of thermal damage and to minimize the residue. As soon as a small cavity is formed during the drilling process, the concave curvature of the drilling front acts as a concave lens that diverges the incident laser beam. This self-defocusing effect can greatly reduce the drilling speed. This effect makes the refractive index of the substrate at different wavelengths an important parameter for laser drilling. A numerical thermal model is built to study the effect of self-defocusing for laser microvias drilling in multilayer electronic substrates with Nd:YAG and CO2 lasers.. The laser ablation thresholds was calculated with this model for the CO2 and Nd:YAG lasers respectively. Due to the expulsion of materials because of high internal pressures in the case of Nd:YAG laser microvia drilling, the ablation threshold may be far below the calculated value. A particular laser beam shape, such as pitch fork, was found to drill better holes than the Gaussian beam in terms of residue and tapering angle. Laser beam shaping technique is used to produce the desired pitchfork beam. Laser beam shaping allows redistribution of laser power and phase across the cross-section of the beam for drilling perfectly cylindrical holes. An optical system, which is comprised of three lenses, is designed to transform a Gaussian beam into a pitchfork beam. The first two lenses are the phase elements through which a Gaussian laser beam is transformed into a super Gaussian beam. The ray tracing technique of geometrical optics is used to design these phase elements. The third lens is the transform element which produces a pitchfork profile at the focal plane due to the diffraction effect. A pinhole scanning power meter is used to measure the laser beam profile at the focal plane to verify the existence of the pitchfork beam. To account for diffraction effect, the above mentioned laser beam shaping system was optimized by iterative method using Adaptive Additive algorithm. Fresnel diffraction is used in the iterative calculation. The optimization was target to reduce the energy contained in the first order diffraction ring and to increase the depth of focus for the system. Two diffractive optical elements were designed. The result of the optimization was found dependent on the relation between the diameter of the designed beam shape and the airy disk diameter. If the diameter of the designed beam is larger, the optimization can generate better result. Drilling experiment is performed with a Q-switched CO2 laser at wavelength of 9.3 μm. Comparison among the drilling results from Gaussian beam, Bessel beam and Pitchfork beam shows that the pitchfork beam can produce microvias with less tapering angle and less residue at the bottom of the via. Laser parameters were evaluated experimentally to study their influences on the via quality. Laser drilling process was optimized based on the evaluation to give high quality of the via and high throughput rate. Nd:YAG laser at wavelengths of 1.06 μm and 532 nm were also used in this research to do microvias drilling. Experimental result is compared with the model. Experimental results show the formation of convex surfaces during laser irradiation. These surfaces eventually rupture and the material is removed explosively due to high internal pressures. Due to the short wavelength, high power, high efficiency and high repetition rate, these lasers exhibit large potentials for microvias drilling.
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Date Issued: 2008
Identifier: CFE0002363, ucf:47799
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002363

Title: moedling phase change heat transfer of liquid/vapor systems in free/porous media.
Creator: Wilson, James, Kumar, Ranganathan, Kar, Aravinda, Chow, Louis, University of Central Florida
Abstract / Description: Effective solvent extraction incorporating electromagnetic heating is a relatively new concept that relies on Radio Frequency heating and solvents to replace steam in current thermal processes for the purpose of extracting bitumen from oil rich sands. The work presented here will further the understanding of the near wellbore flow of this two phase system in order to better predict solvent vaporization dynamics and heat rates delivered to the pay zone. This numerical study details the aspects...
Show moreEffective solvent extraction incorporating electromagnetic heating is a relatively new concept that relies on Radio Frequency heating and solvents to replace steam in current thermal processes for the purpose of extracting bitumen from oil rich sands. The work presented here will further the understanding of the near wellbore flow of this two phase system in order to better predict solvent vaporization dynamics and heat rates delivered to the pay zone. This numerical study details the aspects of phase change of immiscible, two component, liquid/vapor systems confined in porous media heated by electromagnetic radiation, approximated by a spatially dependent volumetric heat source term in the energy equation.The objective of this work is to utilize the numerical methodology presented herein to predict maximum solvent delivery rates to a heated isotropic porous matrix to avoid the over-saturation of the heated pay zone. The total liquid mass content and mean temperature in the domain are monitored to assess whether the liquid phase is fully vaporized prior to flowing across the numerical domain boundary. The distribution of the volumetric heat generation rate used to emulate the physics of electromagnetic heating in the domain decays away from the well bore. Some of the heat generated acts to superheat the already vaporized solvent away from the interface, requiring heat delivery rates that are many times greater than the energy required to turn the liquid solvent to vapor determined by an energy balance. Results of the parametric study from the pay zone simulations demonstrate the importance of the Darcian flow resistance forces added by the porous media to stabilize the flow being pulled away from the wellbore in the presence of gravity. For all cases involving an increase in solvent delivery rate with a constant heat rate, the permeability range required for full vaporization must decrease in order to balance the gravitational forces pulling the solvent from the heated region. For all conditions of permeability and solvent delivery rates, sufficiently increasing the heat rate results in complete vaporization of the liquid solvent. For the case of decreasing solvent delivery rate, a wider range of higher permeabilities for a given heat rate can be utilized while achieving full vaporization. A three dimensional surface outlining the transition from partially vaporized to fully vaporized regimes is constructed relating the solvent delivery rate, the permeability of the porous near wellbore zone and the heat rate supplied to the domain. For the range of permeabilities ~3000mD observed in these types of well bores, low solvent delivery rates and high heat rates must be utilized in order to achieve full vaporization.
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Date Issued: 2015
Identifier: CFE0006018, ucf:50997
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006018

$Enhancement of Bandwidth and Laser Deflection Angle of Acousto-optic Deflectors by Dynamic Two-dimensional Refractive Index Modulation$

Title: Enhancement of Bandwidth and Laser Deflection Angle of Acousto-optic Deflectors by Dynamic Two-dimensional Refractive Index Modulation.
Creator: Wang, Tiansi, Kar, Aravinda, Likamwa, Patrick, Moharam, Jim, Vaidyanathan, Raj, University of Central Florida
Abstract / Description: Acousto-Optic Deflectors (AODs) are inertialess optical solid state devices that have advantages over conventional mechanically controlled mirror-based deflectors in numerous scientific and industrial applications. These applications include fluorescence microscopy, sensing, variable-focus lens, photolithography and laser materials processing. AODs are currently operated with a single piezoelectric transducer that modulates the refractive index only in one direction. This operating principle...
Show moreAcousto-Optic Deflectors (AODs) are inertialess optical solid state devices that have advantages over conventional mechanically controlled mirror-based deflectors in numerous scientific and industrial applications. These applications include fluorescence microscopy, sensing, variable-focus lens, photolithography and laser materials processing. AODs are currently operated with a single piezoelectric transducer that modulates the refractive index only in one direction. This operating principle limits the performance of AODs to a narrow acoustic bandwidth of the transducer and a small angle of laser deflection governed by the Bragg diffraction. To overcome these two limitations, the operation of AODs with phased array ultrasonic transducers is analyzed in this study. Only the amplitude and frequency of the acoustic waves are modulated in conventional AODs. The phased array mechanism enables modulating the acoustic phase in addition to the amplitude and frequency modulations. The latter two phenomena affect the refractive index variation and its periodicity in the AOD medium, respectively, and the phase modulation produces tilted wavefronts due to diffraction and interference of the ultrasonic waves. Consequently, a tilted phase grating is formed inside the AOD device and the tilt angle automatically modifies the laser incident angle on the grating compared to the original angle of incidence on the AOD device. The acoustic frequency and amplitude are, therefore, modulated to achieve the Bragg diffraction under the new angle of incidence and maximize the diffraction efficiency, respectively. The phase grating can be tilted at any arbitrary angle by steering the ultrasonic beam in different directions. The beam steering can be achieved by operating the transducers with various time delays to generate ultrasonic waves of different phases. Due to the diffraction pattern of the ultrasonic intensity distribution, the refractive index varies both longitudinally and transversely to the beam steering direction, and two-dimensional refractive index modulation occurs when the transducers are very long in the third dimension. The acoustic waves affect the refractive index through the photoelastic effect by inducing mechanical strain waves in the AOD medium. The ultrasonic beam steering and the mechanical strain are determined using a modified Rayleigh-Sommerfeld diffraction integral. This integral represents the mechanical displacement vector field produced by ultrasonic waves in solid media. An analytic expression is obtained for the displacement field and the resulting strain distribution is calculated using this expression. Based on the strain and the photoelastic constants, the two-dimensional variation in the refractive index is determined for single-crystal paratellurite TeO2 which is an excellent AOD material. Conventional two-dimensional coupled mode theory of AOD, which is based on only one-dimensional refractive index modulation, is extended in this study to analyze the effect of two-dimensional index variation on the performance of AODs. The diffraction efficiency and the laser beam deflection angle are determined for both plane waves and Gaussian laser beams by obtaining analytic solutions for the coupled mode equations. The diffraction efficiency is found to be nearly unity over a broad range of the acoustic frequency, and the deflection angle can also be increased by steering the ultrasonic beam at large angles.
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Date Issued: 2017
Identifier: CFE0006672, ucf:51219
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006672

Title: hydro-thermo-mechanical behavior of concrete at elevated temperatures.
Creator: Al Fadul, Manar, Mackie, Kevin, Makris, Nicos, Chopra, Manoj, Kar, Aravinda, University of Central Florida
Abstract / Description: In the light of recent tragic events, such as, natural disasters, arson and terrorism, studying the thermo mechanical behavior of concrete at elevated temperatures has become of special concern. In addition, the fact that concrete has been widely used as a structural material in many critical applications, such as high rise buildings, pressure vessels, and nuclear plants, enhances the potential risk of exposing concrete to high temperatures. Accordingly, the potential damage to large-scale...
Show moreIn the light of recent tragic events, such as, natural disasters, arson and terrorism, studying the thermo mechanical behavior of concrete at elevated temperatures has become of special concern. In addition, the fact that concrete has been widely used as a structural material in many critical applications, such as high rise buildings, pressure vessels, and nuclear plants, enhances the potential risk of exposing concrete to high temperatures. Accordingly, the potential damage to large-scale structures during the course of the fire, besides the possible loss of human life, emphasizes the necessity to better understand the thermo-structural behavior and failure mechanism of concrete exposed to elevated temperatures. In this study, a one-dimensional model that describes coupled heat and mass transfer phenomena in heated concrete was developed. The mathematical model is based on the fully implicit finite difference scheme. The control volume approach was employed in the formulation of the finite difference equations. The primary variables considered in the analysis are temperature, vapor density, and pore pressure of the gaseous mixture. Several phenomena have been taken into account, such as evaporation, condensation, and dehydration process. Temperature, pressure, and moisture dependent properties of both gaseous and solid phases were also considered. Moreover, the proposed model is capable of predicting pore pressure values with a sufficient accuracy, which could be significantly important for the prediction of spalling and fire resistance of concrete. The two dimensional coupled heat and mass transfer problem was then studied by extending the proposed one dimensional model so that it can be applicable in solving two-dimensional problems. Output from the numerical model showed that the maximum values of temperature, pressure, and moisture content occur in the corner zone of the concrete cross section, in which the pore pressure builds up right next to the moisture pocket towards the center. In addition, the model demonstrates the capability to solve the coupled problem in situations involving non symmetric boundary conditions, in which conducting a one dimensional analysis is of no use. The contour plots of the temperature, pressure, and moisture were also presented.Simulation results clearly indicate the capability of the proposed model to capture the complex behavior of the concrete exposed to elevated temperatures in two dimensional systems and to adequately predict the coupled heat and mass transfer phenomena of the heated concrete over the entire flow domain. In order to predict the structural behavior of reinforced concrete members exposed to elevated temperatures, a three-dimensional fiber beam model was developed in this study to compute the mechanical responses of reinforced concrete structures at elevated temperatures by using the well-known sectional analysis approach. The temperature distributions obtained from the two-dimensional coupled heat and mass transfer analysis were used as an input to the strength analysis. The model also accounts for the various strain components that might generate in concrete and steel due to the effect of high temperatures. The constitutive models that describe the structural behavior of concrete and steel at elevated temperatures were also presented. In order to establish the validity of the proposed fiber model, a sequentially coupled thermo mechanical analysis was implemented, in which the model predictions were compared against measured data from tests with good qualitative agreement. The developed model can be considered as an efficient and powerful tool to promptly assess the structural behavior and the integrity of the structure during emergency situations, such as fire events.
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Date Issued: 2017
Identifier: CFE0006551, ucf:51340
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006551

Title: Study of Transport Phenomena in Carbon-Based Materials.
Creator: Aboelsoud, Walid, Chow, Louis, Kumar, Ranganathan, Deng, Weiwei, Kar, Aravinda, University of Central Florida
Abstract / Description: In air-cooled heat exchangers, air-side thermal resistance is usually the largest compared to conduction and liquid-side thermal resistances. Thus, reducing the air-side thermal resistance with fin-like structures can greatly improve overall cooling performance. The performance of these structures is usually characterized by the rate of heat which can be transferred and the pumping power required. One promising solution is to use a high-thermal-conductivity material with a large surface per...
Show moreIn air-cooled heat exchangers, air-side thermal resistance is usually the largest compared to conduction and liquid-side thermal resistances. Thus, reducing the air-side thermal resistance with fin-like structures can greatly improve overall cooling performance. The performance of these structures is usually characterized by the rate of heat which can be transferred and the pumping power required. One promising solution is to use a high-thermal-conductivity material with a large surface per unit volume such as carbon foam. This study presents a method of utilizing V-shape corrugated carbon foam. The air-side heat transfer coefficient and the pressure drop across the foam have been investigated using different V-shape foam geometrical configurations obtained by varying its length and height. Based on design considerations and availability, the foam length has been chosen to be 25.4, 38.1 and 52.1 mm while its height is 4.4, 6.8 and 11.7 mm, resulting in nine different test pieces of foam with different heights and lengths.A total number of 81 experiments were carried out and results show that of the nine V-shape configurations, the foam with the shortest length and tallest height gives the best performance. Experimental results are also compared with the results of prior work using different carbon foam geometries. It is shown that V-shape corrugated carbon foam provides higher heat transfer coefficient and better overall performance.Numerical method is performed next. The effect of the foam length and height on thermal and hydraulic performance is demonstrated and discussed. There is excellent agreement between numerical and experimental results. An analysis is also made to better understand the transport phenomena that occur within the porous matrix. For laminar flow of air, one of the findings is the high heat transfer effectiveness of the foam which means a foam thickness of 1 mm or less is sufficient for heat transfer enhancement for air speed of up to 4 m/s. To demonstrate the feasibility of using carbon foam, an analytical case study of carbon foam heat exchanger was performed and compared to traditional heat exchanger with the same heat load. Results show that a volume saving of up to 55% can be obtained by using carbon foam instead of traditional aluminum fins.Another attractive carbon-based material is the highly oriented pyrolytic graphite (HOPG) which has an in-plane thermal conductivity of about 1700 W/m.K and an out-of-plane k of about 8 W/m.K at room temperature. HOPG is a graphite material with a high degree of preferred crystallographic orientation. HOPG can be very useful in thermal applications when axial conduction is critical and needed to be minimized as in recuperators used in cryocoolers and compact power generation. Also, an analysis of HOPG for micro-channel applications shows that the high in-plane thermal conductivity of HOPG, which is far greater than that of copper and aluminum, allows a taller height for the micro-channel. This translates to an increase in the heat flux removal rate by two to three times.
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Date Issued: 2013
Identifier: CFE0005081, ucf:50732
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005081

Title: Spray_Deposited Titanium-Oxide Films For Infrared Optics, Photonics, And Solar Cell Applications.
Creator: Alhasan, Sarmad, Peale, Robert, Sundaram, Kalpathy, Mikhael, Wasfy, Abdolvand, Reza, Kar, Aravinda, University of Central Florida
Abstract / Description: Self-assembled TiO2 foam-like films, were grown by the water based Streaming Process for ElectrodelessElectrochemical Deposition (SPEED). The morphology of the 1 m thick films consistsof a tangled ropy structure with individual strands of 200 nm diameter and open pores of 0.1to 3 micron dimensions. Such films are advantageous for proposed perovskite solar cell comprisingCH3NH3PbI3 absorber with additional inorganic films as contact and conduction layers,all deposited by SPEED. Lateral film...
Show moreSelf-assembled TiO2 foam-like films, were grown by the water based Streaming Process for ElectrodelessElectrochemical Deposition (SPEED). The morphology of the 1 m thick films consistsof a tangled ropy structure with individual strands of 200 nm diameter and open pores of 0.1to 3 micron dimensions. Such films are advantageous for proposed perovskite solar cell comprisingCH3NH3PbI3 absorber with additional inorganic films as contact and conduction layers,all deposited by SPEED. Lateral film resistivity is in the range 20 - 200 k-cm, increasing withgrowth temperature, while sheet resistance is in the range 2 ?? 20 108 /Sq. Xray diffractionconfirms presence of TiO2 crystals of orthorhombic class (Brookite). UV-vis spectroscopy showshigh transmission below the expected 3.2 eV TiO2 bandgap. Transmittance increases with growthtemperature. This is a Ropy TiO2 thin film.We also prepared a Smooth TiO2 thin film. Self-assembled TiO2 film deposited by aqueous-spraydeposition was investigated to evaluate morphology, crystalline phase, and infrared optical constants.The Anatase nano-crystalline film had 10 nm characteristic surface roughness sparselypunctuated by defects of not more than 200 nm amplitude. The film is highly transparent throughoutthe visible to wavelengths of 12 m. The indirect band gap was determined to be 3.2 eV. Importantfor long-wave infrared applications is that dispersion in this region is weak compared with themore commonly used dielectic SiO2 for planar structures. The low-cost, large-area, atmosphericpressure,chemical spray deposition method allows conformal fabrication on flexible substrates forlong-wave infrared photonics.For comparison TiO2 films deposited by electron-beam evaporation were evaluated to determinemorphology, crystalline phase, and optical transparency.The evaporated TiO2 film was amorphous but crystallized into Anatase phase after annealing.Such film is attractive as electron conductor of unprecedented thinness and flexibility for proposedperovskite solar cell comprising CH3NH3PbI3 absorber with additional inorganic films as contactand conduction layers. The spray deposition method would allow conformal solar cell fabricationon flexible substrates for wearable power generation. Band gap of Evaporated TiO2 film is 4.0 eV.We prepared BaTiO3 thin film to know infrared pyroelectric response.Self-assembled nano-crystalline BaTiO3 films on stainless steel foil substrates, were grown by thewater based Streaming Process for Electrodeless Electrochemical Deposition (SPEED). SPEED isan aqueous process that deposits self-assembled nano-crystalline inorganic thin films over largeareas, without a vacuum, providing a scalable and manufacturing friendly process to fabricatedurable films. The morphology of the 1m thick films comprises single crystals of micron dimensionsimbedded in a matrix of nanocrystals. XRD confirms presence of BaTiO3 crystals ofhexagonal phase for samples annealed at 500C. Subsequent annealing at 600C transforms thefilm to the cubic phase. Potential applications include dielectric layers, capacitors, waveguides,ferroelectric RAM, pyroelectric infrared detectors, and phosphors. Characterization of infraredpyroelectric response at 10m wavelength shows an initially good sensitivity that reversibly decaysover a period of days due to water vapor absorption. A short-lived photo-response due topoling of the hydrated sample is also observed. We studied BaTiO3 to know hysteresis loop.Pyroelectric photoresponse of aqueous spray deposited thin films containing BaTiO3 nano-crystalsis reported. X-ray diffraction data indicate the presence of hexagonal BaTiO3 nano-crystals with20 nm crystalline domains in a matrix of some as yet unidentified nano-crystalline material.When the film is annealed at 600C, the X-ray pattern changes significantly and indicates a conversionto one of the non-hexagonal phases of BaTiO3 as well as a complete change in the matrix.With suitable amplifier, the measured photoresponse was 40V/W.Ferroelectric hysteresis on a film with significant presence of hexagonal BaTiO3 shows saturatedpolarization which is about 5-times smaller than for the bulk tetragonal phase.
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Date Issued: 2017
Identifier: CFE0006710, ucf:51899
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006710

Title: Multiscale simulation of laser ablation and processing of semiconductor materials.
Creator: Shokeen, Lalit, Schelling, Patrick, Kar, Aravinda, Vaidyanathan, Rajan, Su, Ming, Kara, Abdelkader, University of Central Florida
Abstract / Description: We present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The...
Show moreWe present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The potential predicts phonon spectra in good agreement with finite-temperature density-functional theory (DFT), including the lattice instability induced by the high electronic excitations. For 25fs pulse, a wide range of fluence values is simulated resulting in heterogeneous melting, homogenous melting, and ablation. The results presented demonstrate that phase transitions can usually be described by ordinary thermal processes even when the electronic temperature Te is much greater than the lattice temperature TL during the transition. However, the evolution of the system and details of the phase transitions depend strongly on Te and corresponding density of broken bonds. For high enough laser fluence, homogeneous melting is followed by rapid expansion of the superheated liquid and ablation. Rapid expansion of the superheated liquid occurs partly due to the high pressures generated by a high density of broken bonds. As a result, the system is readily driven into the liquid-vapor coexistence region, which initiates phase explosion. The results strongly indicates that phase explosion, generally thought of as an ordinary thermal process, can occur even under strong non-equilibrium conditions when Te (>)(>)TL. In summary, a detailed investigation of laser-solid interactions in silicon is presented for femtosecond laser pulse that yields strong far-from-equilibrium conditions.
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Date Issued: 2012
Identifier: CFE0004599, ucf:49206
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004599

Title: Optimization of Process Parameters for Faster Deposition of CuIn1-xGaxS2 and CuIn1-xGaxSe2-ySy Thin Film Solar Cells.
Creator: Kaul, Ashwani, Dhere, Neelkanth, Heinrich, Helge, Kar, Aravinda, Chow, Lee, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: Thin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. Among all the thin film technologies, CuInGaSe2 (CIGS) thin film solar cells have achieved the highest efficiency. However, the high price of photovoltaic (PV) modules has been a major factor impeding their growth for terrestrial applications. Reduction in cost of PV modules can be realized by several ways including choosing scalable processes amenable to large area...
Show moreThin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. Among all the thin film technologies, CuInGaSe2 (CIGS) thin film solar cells have achieved the highest efficiency. However, the high price of photovoltaic (PV) modules has been a major factor impeding their growth for terrestrial applications. Reduction in cost of PV modules can be realized by several ways including choosing scalable processes amenable to large area deposition, reduction in the materials consumption of active layers, and attaining faster deposition rates suitable for in-line processing. Selenization-sulfurization of sputtered metallic Cu-In-Ga precursors is known to be more amenable to large area deposition. Sputter-deposited molybdenum thin film is commonly employed as a back contact layer for CIGS solar cells. However, there are several difficulties in fabricating an optimum back contact layer. It is known that molybdenum thin films deposited at higher sputtering power and lower gas pressure exhibit better electrical conductivity. However, such films exhibit poor adhesion to the soda-lime glass substrate. On the other hand, films deposited at lower discharge power and higher pressure although exhibit excellent adhesion show lower electrical conductivity. Therefore, a multilayer structure is normally used so as to get best from the two deposition regimes. A multi-pass processing is not desirable in high volume production because it prolongs total production time and correspondingly increases the manufacturing cost. In order to make manufacturing compliant with an in-line deposition, it is justifiable having fewer deposition sequences. Thorough analysis of pressure and power relationship of film properties deposited at various parameters has been carried out. It has been shown that it is possible to achieve a molybdenum back contact of desired properties in a single deposition pass by choosing the optimum deposition parameters. It is also shown that the film deposited in a single pass is actually a composite structure. CIGS solar cells have successfully been completed on the developed single layer back contact with National Renewable Energy Laboratory (NREL) certified device efficiencies (>)11%. The optimization of parameters has been carried out in such a way that the deposition of back contact and metallic precursors can be carried out in identical pressure conditions which is essential for in-line deposition without a need for load-lock. It is know that the presence of sodium plays a very critical role during the growth of CIGS absorber layer and is beneficial for the optimum device performance. The effect of sodium location during the growth of the absorber layer has been studied so as to optimize its quantity and location in order to get devices with improved performance. NREL certified devices with efficiencies (>)12% have been successfully completed.
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Date Issued: 2012
Identifier: CFE0004559, ucf:49261
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004559

Title: Phonon Modulation by Polarized Lasers for Material Modification.
Creator: Chen, Sen-Yong, Kar, Aravinda, Vaidyanathan, Rajan, Harvey, James, Likamwa, Patrick, University of Central Florida
Abstract / Description: Magnetic resonance imaging (MRI) has become one of the premier non-invasive diagnostic tools, with around 60 million MRI scans applied each year. However, there is a risk of thermal injury due to radiofrequency (RF) induction heating of the tissue and implanted metallic device for the patients with the implanted metallic devices. Especially, MRI of the patients with implanted elongated devices such as pacemakers and deep brain stimulation systems is considered contraindicated. Many efforts,...
Show moreMagnetic resonance imaging (MRI) has become one of the premier non-invasive diagnostic tools, with around 60 million MRI scans applied each year. However, there is a risk of thermal injury due to radiofrequency (RF) induction heating of the tissue and implanted metallic device for the patients with the implanted metallic devices. Especially, MRI of the patients with implanted elongated devices such as pacemakers and deep brain stimulation systems is considered contraindicated. Many efforts, such as determining preferred MRI parameters, modifying magnetic field distribution, designing new structure and exploring new materials, have been made to reduce the induction heating. Improving the MRI-compatibility of implanted metallic devices by modifying the properties of the existing materials would be valuable.To evaluate the temperature rise due to RF induction heating on a metallic implant during MRI procedure, an electromagnetic model and thermal model are studied. The models consider the shape of RF magnetic pulses, interaction of RF pulses with metal plate, thermal conduction inside the metal and the convection at the interface between the metal and the surroundings. Transient temperature variation and effects of heat transfer coefficient, reflectivity and MRI settings on the temperature change are studied.Laser diffusion is applied to some titanium sheets for a preliminary study. An electromagnetic and thermal model is developed to choose the proper diffusant. Pt is the diffusant in this study. An electromagnetic model is also developed based on the principles of inverse problems to calculate the electromagnetic properties of the metals from the measured magnetic transmittance. This model is used to determine the reflectivity, dielectric constant and conductivity of treated and as-received Ti sheets. The treated Ti sheets show higher conductivity than the as-received Ti sheets, resulting higher reflectivity.A beam shaping lens system which is designed based on vector diffraction theory is used in laser diffusion. Designing beam shaping lens based on the vector diffraction theory offers improved irradiance profile and new applications such as polarized beam shaping because the polarization nature of laser beams is considered. Laser Pt diffusion are applied on the titanium and tantalum substrates using different laser beam polarizations. The concentration of Pt and oxygen in those substrates are measured using Energy Dispersive X-Ray Spectroscopy (EDS). The magnetic transmittance and conductivity of those substrates are measured as well. The effects of laser beam polarizations on Pt diffusion and the magnetic transmittance and conductivity of those substrates are studied. Treated Ti sheets show lower magnetic transmittance due to the increased conductivity from diffused Pt atoms. On the other hand, treated Ta sheets show higher magnetic transmittance due to reduced conductivity from oxidation. Linearly polarized light can enhance the Pt diffusion because of the excitation of local vibration mode of atoms.Laser Pt diffusion and thermo-treatment were applied on the Ta and MP35N wires. The Pt concentration in laser platinized Ta and MP35N wires was determined using EDS. The ultimate tensile strength, fatigue lives and lead tip heating in real MRI environment of those wires were measured. The lead tip hating of the platinized Ta wires is 42 % less than the as-received Ta wire. The diffused Pt increases the conductivity of Ta wires, resulting in more reflection of magnetic field. In the case of the platinized MP35N wire, the reduction in lead tip heating was only 1 (&)deg;C due to low concentration of Pt. The weaker ultimate tensile strength and shorter fatigue lives of laser-treated Ta and MP35N wires may attribute to the oxidation and heating treatment.
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Date Issued: 2012
Identifier: CFE0004500, ucf:49269
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004500

Title: The Effect of Morphology on Reflectance in Silicon Nanowires Grown by Electroless Etching.
Creator: Velez, Victor, Sundaram, Kalpathy, Kapoor, Vikram, Yuan, Jiann-Shiun, Abdolvand, Reza, Kar, Aravinda, University of Central Florida
Abstract / Description: The strong light trapping properties of Silicon Nanowires have attracted much interest in the past few years for the conversion of sun energy into conventional electricity. Studies have been completed for many researchers to reduce the cost of fabrication and reflectance of solar light in these nanostructures to make a cheaper and more efficient solar cell technology by using less equipment for fabrication and employing different materials and solution concentrations. Silver, a conducting and...
Show moreThe strong light trapping properties of Silicon Nanowires have attracted much interest in the past few years for the conversion of sun energy into conventional electricity. Studies have been completed for many researchers to reduce the cost of fabrication and reflectance of solar light in these nanostructures to make a cheaper and more efficient solar cell technology by using less equipment for fabrication and employing different materials and solution concentrations. Silver, a conducting and stable metal is used these days as a precursor to react with silicon and then form the nanowires. Its adequate selection of solution concentration for a size of silicon substrate and the treatment for post-cleaning of silver dendrites make it a viable method among the others. It is an aim of this research to obtain significant low reflectance across the visible solar light range. Detailed concentration, fabrication and reflectance studies is carried out on silicon wafer in order to expand knowledge and understanding.In this study, electroless etching technique has been used as the growth mechanism of SiNWs at room temperature. Optimum ratios of solution concentration and duration for different sizes of exposed area to grow tall silicon nanowires derived from experimentation are presented. Surface imaging of the structures and dimension of length and diameter have been determined by Scanner Electron Microscopy (SEM) and the reflectance in the optical range in silicon nanowires has been make using UV-Visible Spectrophotometer.
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Date Issued: 2017
Identifier: CFE0006815, ucf:51807
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006815

Title: Ultrafast Laser Material Processing For Photonic Applications.
Creator: Ramme, Mark, Richardson, Martin, Fathpour, Sasan, Sundaram, Kalpathy, Kar, Aravinda, University of Central Florida
Abstract / Description: Femtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of...
Show moreFemtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of this technique for introducing photonic structures into novel dielectric materials. Additionally, this work provides a deeper understanding of the light-matter interaction mechanism occurring at high pulse repetition rates. A novel structure on the sample surface in the form of nano-fibers was observed when the bulk material was irradiated with high repetition rate pulse trains.To utilize the advantages of the FLDW technique even further, a transfer of the technology from dielectric to semiconductor materials is investigated. However, this demands detailed insight of the absorption and modification processes themselves. Experiments and the results suggested that non-linear absorption, specifically avalanche ionization, is the limiting factor inhibiting the application of FLDW to bulk semiconductors with today's laser sources.
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Date Issued: 2013
Identifier: CFE0004914, ucf:49626
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004914

Title: An uncooled mid-wave infrared detector based on optical response of laser-doped silicon carbide.
Creator: Lim, Geunsik, Kar, Aravinda, Coffey, Kevin, Vaidyanathan, Raj, Dhere, Neelkanth, Likamwa, Patrick, University of Central Florida
Abstract / Description: This dissertation focuses on an uncooled Mid-Wave Infra-Red (MWIR) detector was developed by doping an n-type 4H-SiC with Ga using the laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide, a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 um. The detection mechanism is based on the photoexcitation of electrons...
Show moreThis dissertation focuses on an uncooled Mid-Wave Infra-Red (MWIR) detector was developed by doping an n-type 4H-SiC with Ga using the laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide, a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 um. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refraction index and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless optical detector. The variation of refraction index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refraction index of the doped sample, indicating that the detector is suitable for applications at 4.21 um wavelength. The Ga dopant energy level in the substrate was confirmed by optical absorption spectroscopy. Secondary ion mass spectroscopy (SIMS) of the doped samples revealed an enhancement in the solid solubility of Ga in the substrate when doping is carried out by increasing the number of laser scans. Higher dopant concentration increases the number of holes in the dopant energy level, enabling photoexcitation of more electrons from the valence band by the incident MWIR photons. The detector performance improves as the dopant concentration increases from 1.15(&)#215;1019 to 6.25(&)#215;10^20 cm^-3. The detectivity of the optical photodetector is found to be 1.07(&)#215;10^10 cm?Hz^1/2/W for the case of doping with 4 laser passes. The noise mechanisms in the probe laser, silicon carbide MWIR detector and laser power meter affect the performance of the detector such as the responsivity, noise equivalent temperature difference (NETD) and detectivity. For the MWIR wavelength 4.21 and 4.63 um, the experimental detectivity of the optical photodetector of this study is found to be 1.07(&)#215;10^10 cm?Hz^1/2/W, while the theoretical value is 2.39(&)#215;10^10 cm?Hz^1/2/W. The values of NETD are found to be 404.03 and 15.48 mK based on experimental data for an MWIR radiation source of temperature 25(&)deg;C and theoretical calculation respectively.The doped SiC also has a capability of gas detection since gas emission spectra are in infrared range. Similarly, the sensor is based on the semiconductor optics principle, i.e., an energy gap is created in a semiconductor by doping it with an appropriate dopant to ensure that the energy gap matches with an emission spectral line of the gas of interest. Specifically four sensors have been fabricated by laser doping four quadrants of a 6H-SiC substrate with Ga, Al, Sc and P atoms to detect CO2, NO, CO and NO2 gases respectively. The photons, which are emitted by the gas, excite the electrons in the doped sample and consequently change the electron density in various energy states. This phenomenon affects the refraction index of the semiconductor and, therefore, the reflectivity of the semiconductor is altered by the gas. The optical response of this semiconductor sensor is the reflected power of a probe beam, which is a He-Ne laser beam in this study. The CO2, NO, CO and NO2 gases change the refraction indices of Ga-, Al-, Sc- and Al-doped 6H-SiC, respectively, more prominently than the other gases tested in this study. Hence these doped 6H-SiC samples can be used as CO2, NO, CO and NO2 gas sensors respectively.
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Date Issued: 2014
Identifier: CFE0005519, ucf:50310
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005519

Title: Theoretical and Experimental Studies for Tailoring the Electromagnetic Surface Properties of Conductive Materials.
Creator: Jennings, Jeffrey, Vaidyanathan, Raj, Kar, Aravinda, Coffey, Kevin, Challapalli, Suryanarayana, Brisbois, Elizabeth, Yu, Xiaoming, University of Central Florida
Abstract / Description: Induction in leaded, implanted medical devices exposed to radio frequency (RF) magnetic fields during magnetic resonance imaging (MRI) produce Joule heating in adjacent tissues causing various issues, including death. Given the importance of MRI as a diagnostic tool and the growth in leaded device-related treatments, identification of a solution ensuring their compatibility is of great interest. Electromagnetic (EM) surface property tailoring in lead materials to change their inductive...
Show moreInduction in leaded, implanted medical devices exposed to radio frequency (RF) magnetic fields during magnetic resonance imaging (MRI) produce Joule heating in adjacent tissues causing various issues, including death. Given the importance of MRI as a diagnostic tool and the growth in leaded device-related treatments, identification of a solution ensuring their compatibility is of great interest. Electromagnetic (EM) surface property tailoring in lead materials to change their inductive response by adding functionally-graded, heterogeneous surface layers is a possible solution. However, non-uniform EM properties introduce two challenges: the added complexity of analyses and characterization of the graded region. This dissertation addresses these complexities.An Helmholtz coil and other loops positioned in a coaxial array were used to create and monitor inductive fields that were mathematically related to the induced current in closed, circular loops with electrical conductivities ranging from 1.0 to 57 megaSiemens per meter. Magnetic flux densities up to 14 microTesla at frequencies from 30 to 100 MHz were evaluated for specimens with varying loop and wire diameters. Induced current results show a linear relationship with flux density and strongly depend on the sample geometry, but not on conductivity. Trends within the data matched well with those predicted by theory that considered such a loop.An equivalent length, semi-analytical approach modeled induced current through a graded EM property region and considered effective conductivities. Predicted results for transmissivity through Pt-doped titanium foils and effective conductivity in round wire Sn-modified Cu samples show good agreement with experimental data. The Joule heating experiment used for wire testing also demonstrates a means for characterizing conductor surface properties. Two new technologies derived from this research including an RF magnetic field imaging technique and a contoured loop array for applying therapeutic controlled RF magnetic fields are also described.
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Date Issued: 2018
Identifier: CFE0007756, ucf:52378
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007756

beam shaping (3)	+ -
laser drilling (2)	+ -
semiconductors (2)	+ -
Acousto-optic Deflectors (1)	+ -
BaTiO3 (1)	+ -

Bandwidth and Deflection Angle (1)	+ -
Black silicon (1)	+ -
CIGS2 (1)	+ -
CIGSeS (1)	+ -
Carbon foam (1)	+ -
DLTS (1)	+ -
Deposition (1)	+ -
Diffusion (1)	+ -
Electroless Metal Deposition (1)	+ -
Electromagnetic properties of conductors (1)	+ -
Endotaxy (1)	+ -
Fluid flow (1)	+ -
Hall Effect (1)	+ -
Heat transfer (1)	+ -
IR (1)	+ -
Infrared detector (1)	+ -
Laser Doping (1)	+ -
Laser doping (1)	+ -
Laser metallization (1)	+ -
MRI (1)	+ -
NIR (1)	+ -
Optics. (1)	+ -
Optimization (1)	+ -
PIN diode (1)	+ -
Photonics (1)	+ -

Kar, Aravinda (16)	+ -
University of Central Florida (16)	+ -
Sundaram, Kalpathy (4)	+ -
Likamwa, Patrick (3)	+ -
Vaidyanathan, Raj (3)	+ -

Abdolvand, Reza (2)	+ -
Chow, Louis (2)	+ -
Coffey, Kevin (2)	+ -
Dhere, Neelkanth (2)	+ -
Kumar, Ranganathan (2)	+ -
Vaidyanathan, Rajan (2)	+ -
Aboelsoud, Walid (1)	+ -
Al Fadul, Manar (1)	+ -
Alhasan, Sarmad (1)	+ -
Bet, Sachin (1)	+ -
Brisbois, Elizabeth (1)	+ -
Challapalli, Suryanarayana (1)	+ -
Chen, Sen-Yong (1)	+ -
Chopra, Manoj (1)	+ -
Chow, Lee (1)	+ -
Deng, Weiwei (1)	+ -
Fathpour, Sasan (1)	+ -
Harvey, James (1)	+ -
Heinrich, Helge (1)	+ -
Jennings, Jeffrey (1)	+ -
Kapoor, Vikram (1)	+ -
Kara, Abdelkader (1)	+ -
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Lim, Geunsik (1)	+ -
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