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FILM GROWTH OF NOVEL FREQUENCY AGILE COMPLEX-OXIDE PIEZOELECTRIC MATERIAL
Title
FILM GROWTH OF NOVEL FREQUENCY AGILE COMPLEX-OXIDE PIEZOELECTRIC MATERIAL.
Creator
Sreeramakavacham, Bindu, Klemenz, Christine, University of Central Florida
Abstract / Description
Piezoelectric materials are well known for their applications in surface (SAW) and bulk acoustic wave (BAW) devices such as oscillators, resonators and sensors. Quartz has been the main material used in such applications. Ternary calcium gallium germanate (CGG) structure-type materials, so-called langasites, recently emerged as very promising because of their piezoelectric properties superior to quartz. This thesis discusses the growth of langasite-type La3Ga5.5Ta0.5O14 (LGT) films by liquid...
Show morePiezoelectric materials are well known for their applications in surface (SAW) and bulk acoustic wave (BAW) devices such as oscillators, resonators and sensors. Quartz has been the main material used in such applications. Ternary calcium gallium germanate (CGG) structure-type materials, so-called langasites, recently emerged as very promising because of their piezoelectric properties superior to quartz. This thesis discusses the growth of langasite-type La3Ga5.5Ta0.5O14 (LGT) films by liquid phase epitaxy (LPE) technique and their chemical and structural characterization. In addition, the different techniques suitable for the growth of LGT are discussed and compared. To adjust the materials properties for given applications, doping by selected ions can be used. However, the dopants must be homogeneously distributed. In the current study, Al, Ti, Cr and Ca were investigated as dopants. In an earlier study, Al and Ti had been chosen because of their ability to substitute the octahedral site of LGT, normally occupied by Ga (CN=VI) with a segregation coefficient near unity in Czochralski growth. Doping with Ca and Cr has never been reported before, and therefore, the segregation behavior was unknown. In this study, Al, Ti and co-doping with Cr and Ca has been investigated for both X and Y-oriented films. The dopant distribution in the films was quantitatively evaluated by Secondary Ion Mass Spectroscopy (SIMS), using ion-implanted LGT substrates as standards. The drop of dopant concentration, in the SIMS profile, allows for the identification of the film-substrate interface and to accurately measure the thickness of the films. The film thickness is found to be typically of the order 0.5 to 2µm, depending on growth conditions. The solvent was found a reliable choice, as solvent ions were not incorporated in the films above the detection limits of the characterization techniques. A lead oxide solvent system is used as a solvent for the growth of LGT LPE films with different orientations. Extensive structural characterization was performed. The crystallinity of substrates and films grown with different orientations was compared by X-ray diffraction (XRD). The films show a very high structural perfection, with typically FWHM values of 0.035 for the (004) reflection of the XRD rocking curve. The films were also characterized by TEM. The optical transmittance of the films was characterized by Varian optical spectrophotometer, and the value obtained of approximately 80% is comparable with the transmittance value of the Czochralski grown polished substrate.
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Date Issued
2007
Identifier
CFE0001772, ucf:47284
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0001772
THERMODYNAMIC STUDIES ON THE SYNTHESIS OF NITRIDES AND EPITAXIAL GROWTH OF INGAN
Title
THERMODYNAMIC STUDIES ON THE SYNTHESIS OF NITRIDES AND EPITAXIAL GROWTH OF INGAN.
Creator
Monga, Zinki, Klemenz, Christine, University of Central Florida
Abstract / Description
Nitride semiconductor materials have been used in a variety of applications, such as LEDs, lasers, photovoltaic cells and medical applications. If incandescent bulbs could be replaced by white GaN LEDs, they would not only provide compactness and longer lifetime, but this would also result in huge energy savings. A renewed interest in InGaN emerged recently after it was discovered that the band gap for InN is 0.7eV, instead of the previously published value of 1.9eV. Thus InGaN solid...
Show moreNitride semiconductor materials have been used in a variety of applications, such as LEDs, lasers, photovoltaic cells and medical applications. If incandescent bulbs could be replaced by white GaN LEDs, they would not only provide compactness and longer lifetime, but this would also result in huge energy savings. A renewed interest in InGaN emerged recently after it was discovered that the band gap for InN is 0.7eV, instead of the previously published value of 1.9eV. Thus InGaN solid solutions cover almost the whole visible spectrum, from a band gap of 3.34eV for GaN and 0.7eV for InN. Hence, InGaN can have excellent applications for photovoltaic cells. The objective of this work was to investigate and search for new ways of synthesis of nitrides. We studied the thermodynamics and evaluated chemical compatibilities for the growth of AlN, GaN, InN and their solid solutions from metallic solvents. The compatibility between potential substrate, crucible and solvent materials and various growth atmospheres was evaluated from Gibbs free energy calculations. Most of the nitride synthesis experiments performed by other groups were at higher temperatures (around 2,000C) and pressures up to 1GPa using different growth methods. Therefore, their results could not be extrapolated to our growth system, as their growth conditions were significantly different from ours Moreover, to the best of our knowledge; no-one has ever evaluated such compatibilities by thermodynamic calculations. We used those calculations to design our experiments for further studies on nitrides. Experimentally, we encountered fewer issues such as corrosion problems than others observed with their growth procedures, because near-atmospheric pressures and temperatures not exceeding 1,000C could be used. Preliminary experiments were performed to confirm the thermodynamic computations and test the behavior of the chosen system. A suitable configuration was found that allowed to nucleate films of InGaN on the templates. Nitride templates or 'Buffer layers' were used to saturate the solution and grow the films. A relatively simpler configuration, to create a temperature gradient in the solution was used. Two templates were placed in the crucible, one at the top and the other one at the bottom. The temperature was raised to 950C and they were soaked there for 15-20hrs. After the growth the surface morphology was analyzed using an optical microscope and it was found to be entirely different for both the templates. The atoms from the top template dissolved and attached at the bottom template. This can be explained by the thermal gradient between the two templates: one at the bottom was at lower temperature than the top template, so there was diffusion from the top substrate towards the bottom one. AFM studies were carried out on the film to study the surface morphology of the top and the bottom templates. Growth hillocks having step height typically between 15 and 50 nm were observed. Such hillocks were not present on the templates before the experiment.
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Date Issued
2007
Identifier
CFE0001806, ucf:47376
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0001806
DELAY MODELING AND LONG-RANGE PREDICTIVE CONTROL OF CZOCHRALSKI GROWTH PROCESS
Title
DELAY MODELING AND LONG-RANGE PREDICTIVE CONTROL OF CZOCHRALSKI GROWTH PROCESS.
Creator
Shah, Dhaval, Klemenz, Christine, University of Central Florida
Abstract / Description
This work presents the Czochralski growth dynamics as time-varying delay based model, applied to the growth of La3Ga5.5Ta0.5O14 (LGT) piezoelectric crystals. The growth of high-quality large-diameter oxides by Czochralski technique requires the theoretical understanding and optimization of all relevant process parameters, growth conditions, and melts chemistry. Presently, proportional-integral- derivative (PID) type controllers are widely accepted for constant-diameter crystal growth by...
Show moreThis work presents the Czochralski growth dynamics as time-varying delay based model, applied to the growth of La3Ga5.5Ta0.5O14 (LGT) piezoelectric crystals. The growth of high-quality large-diameter oxides by Czochralski technique requires the theoretical understanding and optimization of all relevant process parameters, growth conditions, and melts chemistry. Presently, proportional-integral- derivative (PID) type controllers are widely accepted for constant-diameter crystal growth by Czochralski. Such control systems, however, do not account for aspects such as the transportation delay of the heat from crucible wall to the crystal solidification front, heat radiated from the crucible wall above the melt surface, and varying melt level. During crystal growth, these time delays play a dominant role, and pose a significant challenge to the control design. In this study, a time varying linear delay model was applied to the identification of nonlinearities of the growth dynamics. Initial results reveled the benefits of this model with actual growth results. These results were used to develop a long-range model predictive control system design. Two different control techniques using long range prediction are studied for the comparative study. Development and testing of the new control system on real time growth system are discussed in detail. The results are promising and suggest future work in this direction. Other discussion about the problems during the crystal growth, optimization of crystal growth parameters are also studied along with the control system design.
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Date Issued
2009
Identifier
CFE0002581, ucf:48250
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0002581