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Using Fluorescence to Characterize Four Day Simulated Distribution System Trihalomethane Content in Florida Groundwaters
Title
Using Fluorescence to Characterize Four Day Simulated Distribution System Trihalomethane Content in Florida Groundwaters.
Creator
Ousley, Jonathan, Duranceau, Steven, Lee, Woo Hyoung, Sadmani, A H M Anwar, University of Central Florida
Abstract / Description
The United States Environmental Protection Agency (USEPA) regulates public water systems and has established limits for certain disinfection by products (DBPs) that have been linked to health effects, such as bladder cancer. The regulation of DBPs, specifically total trihalomethanes (TTHMs) and haloacetic acids (HAAs), have encouraged water treatment professionals to assess the type and amount of organic precursors in their supplies. Three of the more common water quality parameters that are...
Show moreThe United States Environmental Protection Agency (USEPA) regulates public water systems and has established limits for certain disinfection by products (DBPs) that have been linked to health effects, such as bladder cancer. The regulation of DBPs, specifically total trihalomethanes (TTHMs) and haloacetic acids (HAAs), have encouraged water treatment professionals to assess the type and amount of organic precursors in their supplies. Three of the more common water quality parameters that are monitored as DBP surrogates include dissolved organic carbon (DOC), ultraviolet absorbance (UV254), and specific ultraviolet absorbance (SUVA). Although DOC, UV254, and SUVA have been effectively correlated to DBP formation, efforts to correlate fluorescence excitation emission matrices (FEEM) to DBP formation remains limited within the drinking water community. In this research, a fluorescence regional integration (FRI) approach was used to compare FEEM with DOC, UV254, and SUVA as an alternative surrogate for characterizing TTHMs for groundwater sources located in south central Florida. To quantitatively evaluate FEEM, DOC, UV254, and SUVA as TTHM precursor surrogate parameters, a statistical correlation analysis was employed. Thirteen groundwater samples were collected from various Central Florida groundwater wells in Lake County, Polk County, and Palm Beach County, and analyzed for FEEM, DOC, UV254, and SUVA prior to determining the four-day TTHM concentration using a simulated distribution system dosing procedure. The FRI method was then used to quantify FEEM by dividing the three-dimensional matrix into five distinct regions, each representing a unique organic constituent. The volume under each region was determined and used for the correlation analysis.It was determined that a combinations of regions III and V of the FEEM possessed a strong linear correlation to four day TTHM content (R2 = 0.95) as compared to DOC (R2 = 0.906), UV254 (R2= 0.84), SUVA (R2 = 0.640), and the individual regions of the FEEM. However, DOC showed the strongest correlation when a second order polynomial regression was used (R2 = 0.937). Results for the individual regions of the FEEM revealed four day simulated TTHM correlation coefficients of 0.25, 0.62, 0.86, 0.74, and 0.88 for regions I through V respectively. These values indicated that a combination of regions III and V, which represent the fulvic and humic-like organic fractions detected by FEEM respectively, was the most accurate four day simulated TTHM precursor surrogate parameter based on the groundwater supplies tested. These results reveal that although DOC is still one of the strongest surrogate parameters to TTHM formation, fluorescence has also shown to also be a potentially strong surrogate for groundwaters. The implications of these results signify that fluorescence monitoring could be a viable method of measuring organic content in groundwaters once the technology further develops.
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Date Issued
2016
Identifier
CFE0006839, ucf:51782
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0006839
Impact of Ionizing Radiation and Electron Injection on Carrier Transport Properties in Narrow and Wide Bandgap Semiconductors
Title
Impact of Ionizing Radiation and Electron Injection on Carrier Transport Properties in Narrow and Wide Bandgap Semiconductors.
Creator
Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Peale, Robert, Orlovskaya, Nina, University of Central Florida
Abstract / Description
This study investigated the minority carrier properties of wide and narrow bandgap semiconductors. Included specifically are wide bandgap materials GaN and ?-Ga2O3, and narrow bandgap InAs/GaSb type-II strain-layer superlattice. The importance of minority carrier behavior in bipolar device performance is utmost because it is the limiting component in current conduction. The techniques used to determine minority carrier properties include electron beam induced current (EBIC) and...
Show moreThis study investigated the minority carrier properties of wide and narrow bandgap semiconductors. Included specifically are wide bandgap materials GaN and ?-Ga2O3, and narrow bandgap InAs/GaSb type-II strain-layer superlattice. The importance of minority carrier behavior in bipolar device performance is utmost because it is the limiting component in current conduction. The techniques used to determine minority carrier properties include electron beam induced current (EBIC) and cathodoluminescence (CL) spectroscopy. The CL spectroscopy is complemented with time-resolved CL (TRCL) for direct measurement of carrier radiative recombination lifetime. The minority carrier properties and effect of high energy radiation is explored. The GaN TRCL results suggested an activation energy effecting carrier lifetime of about 90 meV which is related to nitrogen vacancies. The effects of 60Co gamma radiation are demonstrated and related to the effects of electron injection in GaN-based devices. The effects of various high energy radiations upon Si-doped ?-Ga2O3 minority carrier diffusion length and radiative lifetime are measured. The non-irradiated sample thermal activation energies found for minority carrier diffusion length were 40.9 meV, related to shallow Si-donors in the material. The CL results demonstrate that the bandgap of 4.9 eV is slightly indirect. The thermal activation energy decreased on 1.5 MeV electron irradiation but increased for 10 MeV proton irradiation. The increase in energy was related to higher order defects and their complexes, and influenced recombination lifetime significantly. Finally, the diffusion length is reported for narrow bandgap InAs/GaSb superlattice structure and the effect of 60Co gamma radiation is demonstrated.In general, the defects introduced by high energy radiations decreased minority carrier diffusion length, except for 60Co gamma on AlGaN/GaN HEMT devices and high-temperature proton irradiated ?-Ga2O3.
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Date Issued
2018
Identifier
CFE0007217, ucf:52239
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0007217