Current Search: LiKamWa, Patrick (x)
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- Title
- INTEGRATED INP PHOTONIC SWITCHES.
- Creator
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May-Arrioja, Daniel, LiKamWa, Patrick, University of Central Florida
- Abstract / Description
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Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and...
Show morePhotonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.
Show less - Date Issued
- 2006
- Identifier
- CFE0001368, ucf:47007
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001368
- Title
- DESIGN AND FABRICATION OF SPACE VARIANT MICRO OPTICAL ELEMENTS.
- Creator
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Srinivasan, Pradeep, LiKamWa, Patrick, University of Central Florida
- Abstract / Description
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A wide range of applications currently utilize conventional optical elements to individually transform the phase, polarization, and spectral transmission/reflection of the incident radiation to realize the desired system level function. The material properties and the feasibility of fabrication primarily impact the device and system functionality that can be realized. With the advancement in micro/nano patterning, growth, deposition and etching technology, devices with novel and multiplexed...
Show moreA wide range of applications currently utilize conventional optical elements to individually transform the phase, polarization, and spectral transmission/reflection of the incident radiation to realize the desired system level function. The material properties and the feasibility of fabrication primarily impact the device and system functionality that can be realized. With the advancement in micro/nano patterning, growth, deposition and etching technology, devices with novel and multiplexed optical functionalities have become feasible. As a result, it has become possible to engineer the device response in the near and far field by controlling the phase, polarization or spectral response at the micro scale. One of the methods that have been explored to realize unique optical functionalities is by varying the structural properties of the device as a function of spatial location at the sub-micron scale across the device aperture. Spatially varying the structural parameters of these devices is analogous to local modifications of the material properties. In this dissertation, the optical response of interference transmission filters, guided mode resonance reflection filters, and diffraction gratings operated in Littrow condition with strategically introduced spatial variation have been investigated. Spatial variations in optical interference filters were used to demonstrate wavelength tunable spatial filters. The effect was realized by integrating diffractive and continuous phase functions on the defect layer of a one-dimensional photonic crystal structure. Guided mode resonance filters are free space optical filters that provide narrow spectral reflection by combining grating and waveguide dispersion effects. Frequency dependent spatial reflection profiles were achieved by spatially varying the grating fill fraction in designed contours. Diffraction gratings with space variant fill fractions operating in Littrow condition were used to provide graded feedback profiles to improve the beam quality and spatial brightness of broad area diode lasers. The fabrication of space variant structures is challenging and has been accomplished primarily by techniques such as ruling, electron beam writing or complex deposition methods. In order to vary the desired structural parameter in a designed manner, a novel technique for the fabrication of space variant structures using projection lithography with a fidelity that rivals any of the current technologies was also developed as a part of this work. The devices exhibit wavelength dependent beam shaping properties in addition to spatial and spectral filtering and have potential applications in advanced imaging systems, graded reflectivity laser mirrors, and engineered illumination. The design, modeling, microfabrication and experimental characterization of space variant micro optical elements with novel optical functionalities are presented.
Show less - Date Issued
- 2009
- Identifier
- CFE0002843, ucf:48066
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0002843
- Title
- INTEGRATED OPTICAL SPR (SURFACE PLASMON RESONANCE) SENSOR BASED ON OPTOELECTRONIC PLATFORM.
- Creator
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Bang, Hyungseok, LiKamWa, Patrick, University of Central Florida
- Abstract / Description
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Current major demands in SPR sensor development are system miniaturization and throughput improvement. Structuring an array of integrated optical SPR sensor heads on a semiconductor based optoelectronic platform could be a promising solution for those issues, since integrated optical waveguides have highly miniaturized dimension and the optoelectronic platform enables on-chip optical-to-electrical signal conversion. Utilizing a semiconductor based platform to achieve optoelectronic...
Show moreCurrent major demands in SPR sensor development are system miniaturization and throughput improvement. Structuring an array of integrated optical SPR sensor heads on a semiconductor based optoelectronic platform could be a promising solution for those issues, since integrated optical waveguides have highly miniaturized dimension and the optoelectronic platform enables on-chip optical-to-electrical signal conversion. Utilizing a semiconductor based platform to achieve optoelectronic functionality poses requirements to the senor head; the sensor head needs to have reasonably small size while it should have reasonable sensitivity and fabrication tolerance. This research proposes a novel type of SPR sensor head and demonstrates a fabricated device with an array of integrated optical SPR sensor heads endowed with optoelectronic functionality. The novel integrated optical SPR sensor head relies on mode conversion efficiency for its operational principle. The beauty of this type of sensor head is it can produce clear contrast in SPR spectrum with a highly miniaturized and simple structure, in contrast to several-millimeter-scale conventional absorption type or interferometer type sensor heads. The integrated optical SPR sensor with optoelectronic functionality has been realized by structuring a dielectric waveguide based SPR sensor head on a photodetector-integrated semiconductor substrate. A large number of unit sensors have been fabricated on a substrate with a batch fabrication process, which promises a high throughput SPR sensor system or low-priced disposable sensors.
Show less - Date Issued
- 2008
- Identifier
- CFE0002312, ucf:47841
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0002312
- Title
- ELECTRO-OPTICAL AND ALL-OPTICAL SWITCHING IN MULTIMODE INTERFERENCE WAVEGUIDES INCORPORATING SEMICONDUCTOR NANOSTRUCTURES.
- Creator
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Bickel, Nathan, LiKamWa, Patrick, University of Central Florida
- Abstract / Description
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The application of epitaxially grown, III-V semiconductor-based nanostructures to the development of electro-optical and all-optical switches is investigated through the fabrication and testing of integrated photonic devices designed using multimode interference (MMI) waveguides. The properties and limitations of the materials are explored with respect to the operation of those devices through electrical carrier injection and optical pumping. MMI waveguide geometry was employed as it offered...
Show moreThe application of epitaxially grown, III-V semiconductor-based nanostructures to the development of electro-optical and all-optical switches is investigated through the fabrication and testing of integrated photonic devices designed using multimode interference (MMI) waveguides. The properties and limitations of the materials are explored with respect to the operation of those devices through electrical carrier injection and optical pumping. MMI waveguide geometry was employed as it offered advantages such as a very compact device footprint, low polarization sensitivity, large bandwidth and relaxed fabrication tolerances when compared with conventional single-mode waveguide formats. The first portion of this dissertation focuses on the characterization of the materials and material processing techniques for the monolithic integration of In0.15Ga0.85As/GaAs self-assembled quantum dots (SAQD) and InGaAsP/InGaAsP multiple quantum wells (MQW). Supplemental methods for post-growth bandgap tuning and waveguide formation were developed, including a plasma treatment process which is demonstrated to reliably inhibit thermally induced interdiffusion of Ga and In atoms in In0.15Ga0.85As/GaAs quantum dots. The process is comparable to the existing approach of capping the SAQD wafer with TiO2, while being simpler to implement along-side companion techniques such as impurity free vacancy disordering. Study of plasma-surface interactions in both wafer structures suggests that the effect may be dependent on the composition of the contact layer. The second portion of this work deals with the design, fabrication, and the testing of MMI switches which are used to investigate the limits of electrical current control when employing SAQD as the active core material. A variable power splitter based on a 3-dB MMI coupler is used to analyze the effects of sub-microsecond electrical current pulses in relation to carrier and thermal nonlinearities. Electrical current controlled switching of the variable power splitter and a tunable 2 x 2 MMI coupler is also demonstrated. The third part of this dissertation explores the response of In0.15Ga0.85As/GaAs SAQD waveguide structures to photogenerated carriers. Also presented is a simple, but effective, design modification to the 2 x 2 MMI cross-coupler switch that allows control over the carrier distribution within the MMI waveguide. This technique is combined with selective-area bandgap tuning to demonstrate a compact, working, all-optical MMI based switch.
Show less - Date Issued
- 2010
- Identifier
- CFE0003220, ucf:48568
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003220