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STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY
Title
STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY.
Creator
Liu, Yi, Yuan, Jiann.S., University of Central Florida
Abstract / Description
As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to...
Show moreAs CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to achieve high gain with low noise figure, a LO to generate low noise signal with sufficient output power, wide tuning range, and high stability, and a mixer to up-convert or down-convert the signal with good linearity. However, the RF front-end circuit performance is very sensitive to the variation of device parameters. The experimental results show that device performance is degraded significantly subject to HC stress and BD. Therefore, RF front-end performance is degraded by HC and BD effects. With scaling and increasing chip power dissipation, operating temperatures for device have also been increasing. Another reliability concern, which is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias, arises when the operation temperature of devices increases. NBTI has received much attention in recent year and it is found that NIT is present for all stress conditions and NOT is found to occur at high VG. Therefore, the probability of BD in pMOSFET increases with temperature since trapped charges during the NBTI process increase, thus resulting in percolation, a main cause of oxide degradation. The above effects can cause significant degradations in transistors, thus leading to the shifts of RF performance. This dissertation focuses on the following aspects: (1) RF performance degradation in nMOSFET and pMOSFET due to hot carrier and soft breakdown effects are examined experimentally and will be used for circuit application in the future. (2) A modeling method to analyze the gate oxide breakdown effects on RF nMOSFET has been proposed. The device performance drifts due to gate oxide breakdown are examined, breakdown spot resistance and total gate capacitance are extracted before and after stress for 0.16 um CMOS technology. (3) LC voltage controlled oscillator (VCO) performance degradation due to gate oxide breakdown effect is evaluated. (4) NBTI, HCI and BD combined effects on RF performance degradation are investigated. A physical picture illustrating the NBTI induced BD process is presented. A model to evaluate the time-to-failure (TTF) during NBTI is developed. DCIV method is used to extract the densities of NIT and NOT. Measurements show that there is direct correlation between the steplike increase in the gate current and the oxide-trapped charge (NOT). However, Breakdown has nothing to do with interface traps (NIT). (5) It is found that the degradation due to NSH stress is more severe than that of NS stress at high temperature. A model aiming to evaluate the stress-induced degradation is also developed.
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Date Issued
2005
Identifier
CFE0000505, ucf:46465
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0000505
CMOS RF CITUITS VARIABILITY AND RELIABILITY RESILIENT DESIGN, MODELING, AND SIMULATION
Title
CMOS RF CITUITS VARIABILITY AND RELIABILITY RESILIENT DESIGN, MODELING, AND SIMULATION.
Creator
Liu, Yidong, Yuan, Jiann-Shiun, University of Central Florida
Abstract / Description
The work presents a novel voltage biasing design that helps the CMOS RF circuits resilient to variability and reliability. The biasing scheme provides resilience through the threshold voltage (VT) adjustment, and at the mean time it does not degrade the PA performance. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. Power Amplifier (PA) and Low Noise Amplifier (LNA) are investigated case by case through modeling and experiment. PTM 65nm...
Show moreThe work presents a novel voltage biasing design that helps the CMOS RF circuits resilient to variability and reliability. The biasing scheme provides resilience through the threshold voltage (VT) adjustment, and at the mean time it does not degrade the PA performance. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. Power Amplifier (PA) and Low Noise Amplifier (LNA) are investigated case by case through modeling and experiment. PTM 65nm technology is adopted in modeling the transistors within these RF blocks. A traditional class-AB PA with resilient design is compared the same PA without such design in PTM 65nm technology. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. A traditional class-AB PA with resilient design is compared the same PA without such design in PTM 65nm technology. The results show that the biasing design helps improve the robustness of the PA in terms of linear gain, P1dB, Psat, and power added efficiency (PAE). Except for post-fabrication calibration capability, the design reduces the majority performance sensitivity of PA by 50% when subjected to threshold voltage (VT) shift and 25% to electron mobility (¼n) degradation. The impact of degradation mismatches is also investigated. It is observed that the accelerated aging of MOS transistor in the biasing circuit will further reduce the sensitivity of PA. In the study of LNA, a 24 GHz narrow band cascade LNA with adaptive biasing scheme under various aging rate is compared to LNA without such biasing scheme. The modeling and simulation results show that the adaptive substrate biasing reduces the sensitivity of noise figure and minimum noise figure subject to process variation and device aging such as threshold voltage shift and electron mobility degradation. Simulation of different aging rate also shows that the sensitivity of LNA is further reduced with the accelerated aging of the biasing circuit. Thus, for majority RF transceiver circuits, the adaptive body biasing scheme provides overall performance resilience to the device reliability induced degradation. Also the tuning ability designed in RF PA and LNA provides the circuit post-process calibration capability.
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Date Issued
2011
Identifier
CFE0003595, ucf:48861
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0003595
STUDY OF INGAAS LDMOS FOR POWER CONVERSION APPLICATIONS
Title
STUDY OF INGAAS LDMOS FOR POWER CONVERSION APPLICATIONS.
Creator
Liu, Yidong, Yuan, Jiann S., University of Central Florida
Abstract / Description
In this work an n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is investigated. Instead of using traditional Si process for LDMOS, we suggest In0.65Ga0.35As as substitute material due to its higher electron mobility and its promising for power applications. The proposed 0.5-μm channel-length LDMOS cell is studied through device TCAD simulation tools. Due to different gate dielectric, comprehensive comparisons between In0.65Ga0.35As LDMOS and Si LDMOS are made in two ways,...
Show moreIn this work an n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is investigated. Instead of using traditional Si process for LDMOS, we suggest In0.65Ga0.35As as substitute material due to its higher electron mobility and its promising for power applications. The proposed 0.5-μm channel-length LDMOS cell is studied through device TCAD simulation tools. Due to different gate dielectric, comprehensive comparisons between In0.65Ga0.35As LDMOS and Si LDMOS are made in two ways, structure with the same cross-sectional dimension, and structure with different thickness of gate dielectric to achieve the same gate capacitance. The on-resistance of the new device shows a big improvement with no degradation on breakdown voltage over traditional device. Also it is indicated from these comparisons that the figure of merit(FOM) Ron·Qg of In0.65Ga0.35As LDMOS shows an average of 91.9% improvement to that of Si LDMOS. To further explore the benefit of using In0.65Ga0.35As LDMOS as switch in power applications, DC-DC buck converter is utilized to observe the performance of LDMOS in terms of power efficiency. The LDMOS performance is experimented with operation frequency of the circuit sweeping in the range from 100 KHz to 100 MHz. It turns out InGaAs LDMOS is good candidate for power applications.
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Date Issued
2009
Identifier
CFE0002686, ucf:48217
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0002686
FREQUENCY DOMAIN INDEPENDENT COMPONENT ANALYSIS APPLIED TO WIRELESS COMMUNICATIONS OVER FREQUENCY-SELECTIVE CHANNELS
Title
FREQUENCY DOMAIN INDEPENDENT COMPONENT ANALYSIS APPLIED TO WIRELESS COMMUNICATIONS OVER FREQUENCY-SELECTIVE CHANNELS.
Creator
Liu, Yuan, Mikhael, Wasfy, University of Central Florida
Abstract / Description
In wireless communications, frequency-selective fading is a major source of impairment for wireless communications. In this research, a novel Frequency-Domain Independent Component Analysis (ICA-F) approach is proposed to blindly separate and deconvolve signals traveling through frequency-selective, slow fading channels. Compared with existing time-domain approaches, the ICA-F is computationally efficient and possesses fast convergence properties. Simulation results confirm the effectiveness...
Show moreIn wireless communications, frequency-selective fading is a major source of impairment for wireless communications. In this research, a novel Frequency-Domain Independent Component Analysis (ICA-F) approach is proposed to blindly separate and deconvolve signals traveling through frequency-selective, slow fading channels. Compared with existing time-domain approaches, the ICA-F is computationally efficient and possesses fast convergence properties. Simulation results confirm the effectiveness of the proposed ICA-F. Orthogonal Frequency Division Multiplexing (OFDM) systems are widely used in wireless communications nowadays. However, OFDM systems are very sensitive to Carrier Frequency Offset (CFO). Thus, an accurate CFO compensation technique is required in order to achieve acceptable performance. In this dissertation, two novel blind approaches are proposed to estimate and compensate for CFO within the range of half subcarrier spacing: a Maximum Likelihood CFO Correction approach (ML-CFOC), and a high-performance, low-computation Blind CFO Estimator (BCFOE). The Bit Error Rate (BER) improvement of the ML-CFOC is achieved at the expense of a modest increase in the computational requirements without sacrificing the system bandwidth or increasing the hardware complexity. The BCFOE outperforms the existing blind CFO estimator [25, 128], referred to as the YG-CFO estimator, in terms of BER and Mean Square Error (MSE), without increasing the computational complexity, sacrificing the system bandwidth, or increasing the hardware complexity. While both proposed techniques outperform the YG-CFO estimator, the BCFOE is better than the ML-CFOC technique. Extensive simulation results illustrate the performance of the ML-CFOC and BCFOE approaches.
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Date Issued
2005
Identifier
CFE0000756, ucf:46560
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0000756
Predictors of hospital quality and efficiency
Title
Predictors of hospital quality and efficiency.
Creator
Fotovvat, Hoda, Wan, Thomas, Liu, Albert Xinliang, Ramirez, Bernardo, Yu, Chia-Yuan, University of Central Florida
Abstract / Description
American hospitals have made serious efforts to implement and expand their health information technology capabilities and to integrate different specialized care or high-tech services in order to maximize the efficiency and quality of care. In providing a variety of HIT-related services, these hospitals expanded their national reputation in line with integrated care goals. As a result, hospitals are encouraged to establish effective communication channels to facilitate patient-physician...
Show moreAmerican hospitals have made serious efforts to implement and expand their health information technology capabilities and to integrate different specialized care or high-tech services in order to maximize the efficiency and quality of care. In providing a variety of HIT-related services, these hospitals expanded their national reputation in line with integrated care goals. As a result, hospitals are encouraged to establish effective communication channels to facilitate patient-physician sharing of the patient care experience, to enhance effective pain management, and to transform patient-centered care modalities to solidify the adequacy of patient care processes. By analyzing national data sets publicly available, this investigation explored the relationship of acute-care hospitals' performance to the contextual, organizational and patient characteristics, using a cross-sectional study design. This study developed and evaluated the quality and efficiency of hospitals with respects to the structural complexity, process adequacy, efficiency, and quality of care. The structure-process-outcome theory in quality of care developed by Donabedian (1980), is adopted for this investigation. Statistical methods such as confirmatory factor analysis (CFA) and covariance structure model are employed. The population surveyed by the American Hospital Association (AHA) are acute care hospitals throughout the United States, including more than 3000 acute care hospitals of all types of ownership. The data provided by HIMSS Analytics and AHA are available for 2015 and the data provided CMS quality indicators are available for 2016. The key finding of this research is that process adequacy mediates the relationship between hospital structure and performance variables. The efficiency variable played an important role in shaping quality. The location and hospital teaching status have a moderate impact in determining hospital performance by affecting the structure and process of hospitals.
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Date Issued
2019
Identifier
CFE0007888, ucf:52796
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0007888
Development of laser spectroscopy for elemental and molecular analysis
Title
Development of laser spectroscopy for elemental and molecular analysis.
Creator
Liu, Yuan, Richardson, Martin, Vanstryland, Eric, Bass, Michael, Sigman, Michael, University of Central Florida
Abstract / Description
Laser-Induced Breakdown Spectroscopy (LIBS) and Raman spectroscopy are still growing analytical and sensing spectroscopic techniques. They significantly reduce the time and labor cost in analysis with simplified instrumentation, and lead to minimal or no sample damage. In this dissertation, fundamental studies to improve LIBS analytical performance were performed and its fusion with Raman into one single sensor was explored.On the fundamental side, Thomson scattering was reported for the...
Show moreLaser-Induced Breakdown Spectroscopy (LIBS) and Raman spectroscopy are still growing analytical and sensing spectroscopic techniques. They significantly reduce the time and labor cost in analysis with simplified instrumentation, and lead to minimal or no sample damage. In this dissertation, fundamental studies to improve LIBS analytical performance were performed and its fusion with Raman into one single sensor was explored.On the fundamental side, Thomson scattering was reported for the first time to simultaneously measure the electron density and temperature of laser plasmas from a solid aluminum target at atmospheric pressure. Comparison between electron and excitation temperatures brought insights into the verification of local thermodynamic equilibrium condition in laser plasmas.To enhance LIBS emission, Microwave-Assisted LIBS (MA-LIBS) was developed and characterized. In MA-LIBS, a microwave field extends the emission lifetime of the plasma and stronger time integrated signal is obtained. Experimental results showed sensitivity improvement (more than 20-fold) and extension of the analytical range (down to a few tens of ppm) for the detection of copper traces in soil samples. Finally, laser spectroscopy systems that can perform both LIBS and Raman analysis were developed. Such systems provide two types of complimentary information (-) elemental composition from LIBS and structural information from Raman. Two novel approaches were reported for the first time for LIBS-Raman sensor fusion: (i) an Ultra-Violet system which combines Resonant Raman signal enhancement and high ablation efficiency from UV radiation, and (ii) a Ti:Sapphire laser based NIR system which reduces the fluorescence interference in Raman and takes advantage of femtosecond ablation for LIBS.
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Date Issued
2013
Identifier
CFE0005105, ucf:50729
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0005105
Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies
Title
Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies.
Creator
Liu, Wen, Liou, Juin, Yuan, Jiann-Shiun, Sundaram, Kalpathy, Shen, Zheng, Chen, Quanfang, University of Central Florida
Abstract / Description
Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and...
Show moreElectrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this research is to develop novel, effective and robust ESD protection solutions for both emerging technologies and modern complementary metal(-)oxide(-)semiconductor (CMOS) technologies.The Si nanowire field-effect transistors are projected by the International Technology Roadmap for Semiconductors as promising next-generation CMOS devices due to their superior DC and RF performances, as well as ease of fabrication in existing Silicon processing. Aiming at proposing ESD protection solutions for nanowire based circuits, the dimension parameters, fabrication process, and layout dependency of such devices under Human Body Mode (HBM) ESD stresses are studied experimentally in company with failure analysis revealing the failure mechanism induced by ESD. The findings, including design methodologies, failure mechanism, and technology comparisons should provide practical knowhow of the development of ESD protection schemes for the nanowire based integrated circuits. Organic thin-film transistors (OTFTs) are the basic elements for the emerging flexible, printable, large-area, and low-cost organic electronic circuits. Although there are plentiful studies focusing on the DC stress induced reliability degradation, the operation mechanism of OTFTs subject to ESD is not yet available in the literature and are urgently needed before the organic technology can be pushed into consumer market. In this work, the ESD operation mechanism of OTFT depending on gate biasing condition and dimension parameters are investigated by extensive characterization and thorough evaluation. The device degradation evolution and failure mechanism under ESD are also investigated by specially designed experiments. In addition to the exploration of ESD protection solutions in emerging technologies, efforts have also been placed in the design and analysis of a major ESD protection device, diode-triggered-silicon-controlled-rectifier (DTSCR), in modern CMOS technology (90nm bulk). On the one hand, a new type DTSCR having bi-directional conduction capability, optimized design window, high HBM robustness and low parasitic capacitance are developed utilizing the combination of a bi-directional silicon-controlled-rectifier and bi-directional diode strings. On the other hand, the HBM and Charged Device Mode (CDM) ESD robustness of DTSCRs using four typical layout topologies are compared and analyzed in terms of trigger voltage, holding voltage, failure current density, turn-on time, and overshoot voltage. The advantages and drawbacks of each layout are summarized and those offering the best overall performance are suggested at the end.
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Date Issued
2012
Identifier
CFE0004571, ucf:49199
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0004571
Experimental study and modeling of mechanical micro-machining of particle reinforced heterogeneous materials
Title
Experimental study and modeling of mechanical micro-machining of particle reinforced heterogeneous materials.
Creator
Liu, Jian, Xu, Chengying, An, Linan, Gordon, Ali, Bai, Yuanli, Gong, Xun, University of Central Florida
Abstract / Description
This study focuses on developing explicit analytical and numerical process models for mechanical micro-machining of heterogeneous materials. These models are used to select suitable process parameters for preparing and micro-machining of these advanced materials. The material system studied in this research is Magnesium Metal Matrix Composites (Mg-MMCs) reinforced with nano-sized and micro-sized silicon carbide (SiC) particles.This research is motivated by increasing demands of miniaturized...
Show moreThis study focuses on developing explicit analytical and numerical process models for mechanical micro-machining of heterogeneous materials. These models are used to select suitable process parameters for preparing and micro-machining of these advanced materials. The material system studied in this research is Magnesium Metal Matrix Composites (Mg-MMCs) reinforced with nano-sized and micro-sized silicon carbide (SiC) particles.This research is motivated by increasing demands of miniaturized components with high mechanical performance in various industries. Mg-MMCs become one of the best candidates due to its light weight, high strength, and high creep/wear resistance. However, the improved strength and abrasive nature of the reinforcements bring great challenges for the subsequent micro-machining process.Systematic experimental investigations on the machinability of Mg-MMCs reinforced with SiC nano-particles have been conducted. The nanocomposites containing 5 Vol.%, 10 Vol.% and 15 Vol.% reinforcements, as well as pure magnesium, are studied by using the Design of Experiment (DOE) method. Cutting forces, surface morphology and surface roughness are characterized to understand the machinability of the four materials. Based on response surface methodology (RSM) design, experimental models and related contour plots have been developed to build a connection between different materials properties and cutting parameters. Those models can be used to predict the cutting force, the surface roughness, and then optimize the machining process.An analytical cutting force model has been developed to predict cutting forces of Mg-MMCs reinforced with nano-sized SiC particles in the micro-milling process. This model is different from previous ones by encompassing the behaviors of reinforcement nanoparticles in three cutting scenarios, i.e., shearing, ploughing and elastic recovery. By using the enhanced yield strength in the cutting force model, three major strengthening factors are incorporated, including load-bearing effect, enhanced dislocation density strengthening effect and Orowan strengthening effect. In this way, the particle size and volume fraction, as significant factors affecting the cutting forces, are explicitly considered. In order to validate the model, various cutting conditions using different size end mills (100 (&)#181;m and 1 mm dia.) have been conducted on Mg-MMCs with volume fraction from 0 (pure magnesium) to 15 Vol.%. The simulated cutting forces show a good agreement with the experimental data. The proposed model can predict the major force amplitude variations and force profile changes as functions of the nanoparticles' volume fraction. Next, a systematic evaluation of six ductile fracture models has been conducted to identify the most suitable fracture criterion for micro-scale cutting simulations. The evaluated fracture models include constant fracture strain, Johnson-Cook, Johnson-Cook coupling criterion, Wilkins, modified Cockcroft-Latham, and Bao-Wierzbicki fracture criterion. By means of a user material subroutine (VUMAT), these fracture models are implemented into a Finite Element (FE) orthogonal cutting model in ABAQUS/Explicit platform. The local parameters (stress, strain, fracture factor, velocity fields) and global variables (chip morphology, cutting forces, temperature, shear angle, and machined surface integrity) are evaluated. Results indicate that by coupling with the damage evolution, the capability of Johnson-Cook and Bao-Wierzbicki can be further extended to predict accurate chip morphology. Bao-Wierzbiki-based coupling model provides the best simulation results in this study. The micro-cutting performance of MMCs materials has also been studied by using FE modeling method. A 2-D FE micro-cutting model has been constructed. Firstly, homogenized material properties are employed to evaluate the effect of particles' volume fraction. Secondly, micro-structures of the two-phase material are modeled in FE cutting models. The effects of the existing micro-sized and nano-sized ceramic particles on micro-cutting performance are carefully evaluated in two case studies. Results show that by using the homogenized material properties based on Johnson-Cook plasticity and fracture model with damage evolution, the micro-cutting performance of nano-reinforced Mg-MMCs can be predicted. Crack generation for SiC particle reinforced MMCs is different from their homogeneous counterparts; the effect of micro-sized particles is different from the one of nano-sized particles.In summary, through this research, a better understanding of the unique cutting mechanism for particle reinforced heterogeneous materials has been obtained. The effect of reinforcements on micro-cutting performance is obtained, which will help material engineers tailor suitable material properties for special mechanical design, associated manufacturing method and application needs. Moreover, the proposed analytical and numerical models provide a guideline to optimize process parameters for preparing and micro-machining of heterogeneous MMCs materials. This will eventually facilitate the automation of MMCs' machining process and realize high-efficiency, high-quality, and low-cost manufacturing of composite materials.
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Date Issued
2012
Identifier
CFE0004570, ucf:49196
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0004570
High Volume Fraction Mg-based Nanocomposites: Processing, Microstructure and Mechanical Behavior
Title
High Volume Fraction Mg-based Nanocomposites: Processing, Microstructure and Mechanical Behavior.
Creator
Liu, Jinling, An, Linan, Suryanarayana, Challapalli, Fang, Jiyu, Bai, Yuanli, Lin, Kuo-Chi, University of Central Florida
Abstract / Description
Mg-based metal matrix nanocomposites (MMNCs) with mechanical properties, superior to those of coarse-grained composites, are promising structural materials for applications in the automotive and aerospace industries. The research in this area was primarily focused earlier on either micro-scaled reinforcements or nano-scaled reinforcements with very low volume fractions. MMNCs with high volume fractions have not been explored yet. In this research, we study the processing, microstructures and...
Show moreMg-based metal matrix nanocomposites (MMNCs) with mechanical properties, superior to those of coarse-grained composites, are promising structural materials for applications in the automotive and aerospace industries. The research in this area was primarily focused earlier on either micro-scaled reinforcements or nano-scaled reinforcements with very low volume fractions. MMNCs with high volume fractions have not been explored yet. In this research, we study the processing, microstructures and properties of MMNCs containing ceramic nanoparticles up to 30 vol.%.We first investigated the mechanical alloying of Al2O3 nanoparticles and pure Mg under high-energy ball milling conditions. The phase evolution and their distribution were evaluated as a function of milling time. Then, the thermal stability of the formed nanocomposites was investigated by annealing it at high temperatures. It indicated that an exchange reaction had occurred to a large extent between Mg and Al2O3 resulting in the formation of Al and MgO phases. Additionally, the reaction between Al and un-reacted Mg led to the formation of Mg-Al intermetallics.Due to the reaction between Mg and Al2O3 during the milling and annealing process, we attempted to synthesize Mg/SiC nanocomposites. The mixed powders containing 0, 5, 10 and 15 vol.% SiC were produced by high energy ball milling and then the powders were consolidated via spark plasma sintering. The phase constitutions and microstructures of the Mg/SiC nanocomposites were characterized. SiC nanoparticles (average particle size ~14 nm) appear to be homogeneously dispersed within the matrix, and the average inter-particle spacings of all the Mg/SiC nanocomposites were smaller than 50 nm. Microscopic methods, even at high magnifications did not reveal any significant porosity in the as-processed MMNCs.Mechanical characterization of the Mg/SiC nanocomposites was conducted using the microindentation test. Besides the microhardness test, different intermediate pause times and loading rates were used to evaluate the stiffness and loading rate sensitivity of our samples. The abnormal microhardness and loading rate sensitivity were showed for the Mg-15 vol.% SiC samples. At the same time, the monotonic increase of stiffness with volume fraction was exhibited in the Mg/SiC nanocomposites.Finally, we investigated the quasi-static and dynamic response of Mg/SiC nanocomposites and microcomposites, and discussed the underlying mechanisms. Strain softening was noticed in the milled Mg sample under quasi-static compression. Similarly, the strengthening effect leveling off was also observed in the Mg-15 vol.% SiC samples under either quasi-static or high-strain rate uniaxial compression conditions. No significant plastic deformation was observed in the Mg/SiC nanocomposites. The estimated strain rate sensitivity of all the Mg/SiC nanocomposites in this work was around 0.03, which is much smaller than 0.3 and 0.6, observed for 100 nm and 45 nm grain size pure Mg individually. In particular, the existing models fail in predicting the inverse volume fraction effect, and other mechanisms are yet to be explored. The presence of SiC nanoparticles may play an important role that leads to this difference.
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Date Issued
2013
Identifier
CFE0004879, ucf:49672
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0004879
RF Energy Harvesting for Implantable ICs with On-chip Antenna
Title
RF Energy Harvesting for Implantable ICs with On-chip Antenna.
Creator
Liu, Yu-chun, Yuan, Jiann-Shiun, Gong, Xun, Jones, W, University of Central Florida
Abstract / Description
Nowadays, as aging population increasing yearly, the health care technologies for elder people who commonly have high blood pressure or Glaucoma issues have attracted much attention. In order to care of those people, implantable integrated circuits (ICs) in human body are the direct solution to have 24/7 days monitoring with real-time data for diagnosis by patients themselves or doctors. However, due to the small size requirement for the implanted ICs located in human organs, it's quite...
Show moreNowadays, as aging population increasing yearly, the health care technologies for elder people who commonly have high blood pressure or Glaucoma issues have attracted much attention. In order to care of those people, implantable integrated circuits (ICs) in human body are the direct solution to have 24/7 days monitoring with real-time data for diagnosis by patients themselves or doctors. However, due to the small size requirement for the implanted ICs located in human organs, it's quite challenging to integrate with transmitting and receiving antenna in a single chip, especially operating in 5.8-GHz ISM band. This research proposes a new idea to solve the issue of integrating an on-chip antenna with implanted ICs. By adding an additional dielectric substrate upon the layer of silicon oxide in CMOS technology, utilizing the metal-6, it can form an extremely compact 3D-structure on-chip antenna which is able to be placed in human eye, heart or even in a few mm-diameter vessels. The proposed 3D on-chip antenna is only 1(&)#215;1(&)#215;2.8 mm3 with -10 dB gain and 10% efficiency, which has capability to communicate at least within 5 cm distance. The entire implanted battery-less wireless system has also been developed in this research. A designed 30% efficiency Native NMOS rectifier could generate 1 V and 1 mA to supply the designed low power transmitter including voltage-controlled oscillator (VCO) and power amplifier (PA). The entire system performance is well evaluated by link budget analysis and the simulation result demonstrates the possibility and feasibility of future on-demand easy-to-design implantable SoC.
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Date Issued
2014
Identifier
CFE0005202, ucf:50652
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0005202