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- Title
- ASSESSING THE VIABILITY OF SOL-GEL NIMGO FILMS FOR SOLAR BLIND DETECTION.
- Creator
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Scheurer, Amber, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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Wide bandgap semiconductors have been broadly investigated for their potential to detect and emit high energy ultraviolet (UV) photons. Advancements in deep UV optoelectronic materials would enable the efficient and affordable realization of many medical, industrial and consumer UV optical devices. The traditional growth method, vacuum deposition, is an extremely complicated and expensive process. Sol-gel processing dramatically simplifies facility requirements and can be scaled to industrial...
Show moreWide bandgap semiconductors have been broadly investigated for their potential to detect and emit high energy ultraviolet (UV) photons. Advancements in deep UV optoelectronic materials would enable the efficient and affordable realization of many medical, industrial and consumer UV optical devices. The traditional growth method, vacuum deposition, is an extremely complicated and expensive process. Sol-gel processing dramatically simplifies facility requirements and can be scaled to industrial size. The work presented here involves a novel study of the ternary wide bandgap material Ni1-xMgxO. Films were developed by sol-gel spin coating for investigation of material and electrical properties. This method produced films 200-600 nm thick with surface roughness below 4 nm RMS. Sintered films indicated an improvement from 60% to 90% transmission near the band edge. Additionally, compositional analysis was performed by X-ray Photoelectron Spectroscopy and film defects were characterized by photoluminescence using a continuous wave He-Cd UV laser, revealing the expected oxygen defect at 413nm. This film growth technique has produced thin polycrystalline films with low surface roughness and a high degree of crystalline orientation; crucial characteristics for semiconductor devices. These films have demonstrated the ability to be tuned over the full compositional range from the bandgap of NiO (3.6 eV) to that of MgO (7.8 eV). Optoelectronic devices produced by standard photolithographic techniques are discussed as well as the electrical transport properties of their metal contacts. Based on initial results, these films have demonstrated strong potential as solar blind detectors of UV radiation.
Show less - Date Issued
- 2011
- Identifier
- CFH0003800, ucf:44768
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFH0003800
- Title
- EPITAXIAL GROWTH, CHARACTERIZATION AND APPLICATION OF NOVEL WIDE BANDGAP OXIDE SEMICONDUCTORS.
- Creator
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Mares, Jeremy, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning...
Show moreIn this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited - and possibly even juxtaposed - to realize novel wide band gap optoelectronic technologies. The results of the research conducted presented herein overwhelmingly support this hypothesis in that they confirm the possibility to grow these films with sufficient quality by this technique, as conjectured. NixMg1-xO films with varying Nickel concentrations ranging from x = 0 to x = 1 have been grown on lattice matched MgO substrates (lattice mismatch ε < 0.01) and characterized structurally, morphologically, optically and electrically. Similarly, cubic ZnxMg1-xO films with Zinc concentrations ranging from x = 0 to x ≈ 0.53, as limited by phase segregation, have also been grown and characterized. Photoconductive devices have been designed and fabricated from these films and characterized. Successfully engineered films in both categories exhibit the desired deep ultraviolet photoresponse and therefore verify the hypothesis. While the culminating work of interest here focuses on the two compounds discussed above, the investigation has also involved the characterization or exploitation of related films including hexagonal phase ZnxMg1-xO, ZnO, CdxZn1-xO and hybrid structures based on these compounds used in conjunction with GaN. These works were critical precursors to the growth of cubic oxides, however, and are closely relevant. Viewed in its entirety, this document can therefore be considered a multifaceted interrogation of several novel oxide compounds and structures, both cubic and wurtzite in structure. The conclusions of the research can be stated succinctly as a quantifiably successful effort to validate the use of these compounds and structures for wide bandgap optoelectronic technologies.
Show less - Date Issued
- 2010
- Identifier
- CFE0003125, ucf:48625
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003125
- Title
- DESIGN, FABRICATION, AND TESTING OF HIGH-TRANSPARENCY DEEP ULTRA-VIOLETCONTACTS USING SURFACE PLASMON COUPLING IN SUBWAVELENGTH ALUMINUM MESHES.
- Creator
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Mazuir, Clarisse, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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The present work aims at enhancing the external quantum efficiencies of ultra-violet (UV) sensitive photodetectors (PDs) and light emitting diodes (LEDs)for any light polarization. Deep UV solid state devices are made out of AlGaN or MgZnO and their performances suffer from the high resistivity of their p-doped regions. They require transparent p-contacts; yet the most commonly used transparent contacts have low transmission in the UV: indium tin oxide (ITO) and nickel-gold (Ni/Au 5/5 nms)...
Show moreThe present work aims at enhancing the external quantum efficiencies of ultra-violet (UV) sensitive photodetectors (PDs) and light emitting diodes (LEDs)for any light polarization. Deep UV solid state devices are made out of AlGaN or MgZnO and their performances suffer from the high resistivity of their p-doped regions. They require transparent p-contacts; yet the most commonly used transparent contacts have low transmission in the UV: indium tin oxide (ITO) and nickel-gold (Ni/Au 5/5 nms) transmit less than 50% and 30% respectively at 300 nm. Here we investigate the use of surface plasmons (SPs) to design transparent p-contacts for AlGaN devices in the deep UV region of the spectrum. The appeal of using surface plasmon coupling arose from the local electromagnetic field enhancement near the metal surface as well as the increase in interaction time between the field and semiconductor if placed on top of a semiconductor. An in/out-coupling mechanism is achieved by using a grating consisting of two perpendicularly oriented sets of parallel aluminum lines with periods as low as 250 nm. The incident light is first coupled into SPs at the air/aluminum interface which then re-radiate at the aluminum/AlGaN interface and the photons energy is transferred to SP polaritons (SPPs) and back to photons. High transmission can be achieved not only at normal incidence but for a wider range of incident angles. A finite difference time domain (FDTD) package from R-Soft was used to simulate and design such aluminum gratings with transparency as high as 100% with tunable peak wavelength, bandwidth and angular acceptance. A rigorous coupled wave analysis (RCWA) was developed in Matlab to validate the FDTD results. The high UV transparency meshes were then fabricated using an e-beam assisted lithography lift-off process. Their electrical and optical properties were investigated. The electrical characterization was very encouraging; the sheet resistances of these meshes were lower than those of the conventionally used transparent contacts. The optical transmissions were lower than expected and the causes for the lower measurements have been investigated. The aluminum oxidation, the large metal grain size and the line edge roughness were identified as the main factors of inconsistency and solutions are proposed to improve these shortcomings. The effect of aluminum oxidation was calculated and the passivation of aluminum with SiO2 was evaluated as a solution. A cold deposition of aluminum reduced the aluminum grain size from 60 nm to 20 nm and the roughness from 5 nm to 0.5 nm. Furthermore, replacing the conventional lift-off process by a dry back-etch process led to much smoother metal line edges and much high optical transparency. The optical measurements were consistent with the simulations. Therefore, reduced roughness and smooth metal line edges were found to be especially critical considerations for deep UV application of the meshes.
Show less - Date Issued
- 2011
- Identifier
- CFE0003645, ucf:48893
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003645
- Title
- MODELING AND DESIGN OF A PHOTONIC CRYSTAL CHIP HOSTING A QUANTUM NETWORK MADE OF SINGLE SPINS IN QUANTUM DOTS THAT INTERACT VIA SINGLE PHOTONS.
- Creator
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Seigneur, Hubert, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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In this dissertation, the prospect of a quantum technology based on a photonic crystal chip hosting a quantum network made of quantum dot spins interacting via single photons is investigated. The mathematical procedure to deal with the Liouville-Von Neumann equation, which describes the time-evolution of the density matrix, was derived for an arbitrary system, giving general equations. Using this theoretical groundwork, a numerical model was then developed to study the spatiotemporal dynamics...
Show moreIn this dissertation, the prospect of a quantum technology based on a photonic crystal chip hosting a quantum network made of quantum dot spins interacting via single photons is investigated. The mathematical procedure to deal with the Liouville-Von Neumann equation, which describes the time-evolution of the density matrix, was derived for an arbitrary system, giving general equations. Using this theoretical groundwork, a numerical model was then developed to study the spatiotemporal dynamics of entanglement between various qubits produced in a controlled way over the entire quantum network. As a result, an efficient quantum interface was engineered allowing for storage qubits and traveling qubits to exchange information coherently while demonstrating little error and loss in the process; such interface is indispensable for the realization of a functional quantum network. Furthermore, a carefully orchestrated dynamic control over the propagation of the flying qubit showed high-efficiency capability for on-chip single-photon transfer. Using the optimized dispersion properties obtained quantum mechanically as design parameters, a possible physical structure for the photonic crystal chip was constructed using the Plane Wave Expansion and Finite-Difference Time-Domain numerical techniques, exhibiting almost identical transfer efficiencies in terms of normalized energy densities of the classical electromagnetic field. These promising results bring us one step closer to the physical realization of an integrated quantum technology combining both semiconductor quantum dots and sub-wavelength photonic structures.
Show less - Date Issued
- 2010
- Identifier
- CFE0003433, ucf:48391
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003433
- Title
- Excellent Surface Passivation for High Efficiency C_Si Solar Cells.
- Creator
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Bakhshi, Sara, Schoenfeld, Winston, Abdolvand, Reza, Sundaram, Kalpathy, Davis, Kristopher, University of Central Florida
- Abstract / Description
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Semiconductor surface clean is sometimes perceived as costly but long recognized as pivotal in determining the final semiconductor device performance and yield. In this contribution, we investigated the effectiveness of crystalline silicon surface cleaning by a simple UV-ozone process in comparison to the industry standard RCA clean for silicon photovoltaic applications. We present a unique method of processing the silicon surface effectively by UV-ozone cleaning. Despite being simple, UV...
Show moreSemiconductor surface clean is sometimes perceived as costly but long recognized as pivotal in determining the final semiconductor device performance and yield. In this contribution, we investigated the effectiveness of crystalline silicon surface cleaning by a simple UV-ozone process in comparison to the industry standard RCA clean for silicon photovoltaic applications. We present a unique method of processing the silicon surface effectively by UV-ozone cleaning. Despite being simple, UV-ozone cleaning results in a superior surface passivation quality that is comparable to high-quality RCA clean. When used as a stack dielectric(-)UV-ozone oxide overlaid by aluminum oxide(-)the thickness of UV-ozone oxide plays an important role in determining the passivation quality. Of all treatment times, 15 min of UV-ozone treatment results in an outstanding passivation quality, achieving the effective carrier lifetime of 3 ms and saturation current density of 5 fA/cm2. In addition, we present a simple and effective technique to extract values of electron/hole capture cross-section for the purpose of analyzing the interface passivation quality from already measured surface recombination parameters of saturation current density, interfacial trap density and total fixed charge, instead of measuring on the separately prepared metal-insulated-semiconductor (MIS) samples by the techniques: frequency-dependent parallel conductance or deep-level transient spectroscopy.
Show less - Date Issued
- 2018
- Identifier
- CFE0007154, ucf:52313
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007154
- Title
- Cryogenic performance projections for ultra-small oxide-free vertical-cavity surface-emitting lasers.
- Creator
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Bayat, Mina, Deppe, Dennis, Li, Guifang, Schoenfeld, Winston, Lyakh, Arkadiy, University of Central Florida
- Abstract / Description
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Small-sized vertical-cavity surface-emitting laser (VCSEL) may offer very low power consumption along with high reliability for cryogenic data transfer. Cryogenic data transfer has application in supercomputers and superconducting for efficient computing and also focal plane array cameras operating at 77 K, and at the lower temperature of 4 K for data extraction from superconducting circuits. A theoretical analysis is presented for 77 K and 4 K operation based on small cavity, oxide-free...
Show moreSmall-sized vertical-cavity surface-emitting laser (VCSEL) may offer very low power consumption along with high reliability for cryogenic data transfer. Cryogenic data transfer has application in supercomputers and superconducting for efficient computing and also focal plane array cameras operating at 77 K, and at the lower temperature of 4 K for data extraction from superconducting circuits. A theoretical analysis is presented for 77 K and 4 K operation based on small cavity, oxide-free VCSEL sizes of 2 to 6 (&)#181;m, that have been shown to operate efficiently at room temperature. Temperature dependent operation for optimally-designed VCSELs are studied by calculating the response of the laser at 77 K and 4 K to estimate their bias conditions needed to reach modulation speed for cryogenic optical links. The temperature influence is to decrease threshold for reducing temperature, and to increase differential gain for reducing temperature. The two effects predict very low bias currents for small cavity VCSELs to reach needed data speed for cryogenic optical data links. Projections are made for different cavity structures (half-wave cavity and full-wave cavity) shown that half-wave cavity structure has better performance. Changing the number of top-mirror pairs has also been studied to determine how cavity design impacts speed and bit energy. Our design and performance predictions paves the way for realizing highly efficient, ultra-small VCSEL arrays with applications in optical interconnects.
Show less - Date Issued
- 2019
- Identifier
- CFE0007782, ucf:52330
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007782
- Title
- Radiation Effects on Wide Band Gap Semiconductor Transport Properties.
- Creator
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Schwarz, Casey, Flitsiyan, Elena, Chernyak, Leonid, Peale, Robert, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of...
Show moreIn this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minority carrier diffusion length, L, was shown to increase as it was subjected to increasing temperature as well as continuous electron irradiation. The near-band-edge (NBE) intensity in CL measurements was found to decay as a function of temperature and electron irradiation due to an increase in carrier lifetime. Electron injection through application of a forward bias also resulted in a similar increase of minority carrier diffusion length.Thermal and electron irradiation dependences were used to determine activation energies for the irradiation induced effects. This helps to further our understanding of the electron injection mechanism as well as to identify possible defects responsible for the observed effects. Thermal activation energies likely represent carrier delocalization energy and are related to the increase of diffusion length due to the reduction in recombination efficiency. The effect of electron irradiation on the minority carrier diffusion length and lifetime can be attributed to the trapping of non-equilibrium electrons on neutral acceptor levels. The effect of neutron irradiation on CL intensity can be attributed to an increase in shallow donor concentration. Thermal activation energies resulting from an increase in L or decay of CL intensity monitored through EBIC and CL measurements for p-type Sb doped ZnO were found to be the range of Ea = 112 to 145 meV. P-type Sb doped ZnO nanowires under the influence of temperature and electron injection either through continuous beam impacting or through forward bias, displayed an increase in L and corresponding decay of CL intensity when observed by EBIC or CL measurements. These measurements led to activation energies for the effect ranging from Ea = 217 to 233 meV. These values indicate the possible involvement of a SbZn-2VZn acceptor complex. For N-type unintentionally doped ZnO, CL measurements under the influence of temperature and electron irradiation by continuous beam impacting led to a decrease in CL intensity which resulted in an electron irradiation activation energy of approximately Ea = 259 meV. This value came close to the defect energy level of the zinc interstitial. CL measurements of neutron irradiated ZnO nanostructures revealed that intensity is redistributed in favor of the NBE transition indicating an increase of shallow donor concentration. With annealing contributing to the improvement of crystallinity, a decrease can be seen in the CL intensity due to the increase in majority carrier lifetime. Low energy emission seen from CL spectra can be due to oxygen vacancies and as an indicator of radiation defects.
Show less - Date Issued
- 2012
- Identifier
- CFE0004234, ucf:49018
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004234
- Title
- Infrared Tapered Slot Antennas Coupled to Tunnel Diodes.
- Creator
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Florence, Louis, Boreman, Glenn, Likamwa, Patrick, Schoenfeld, Winston, Lail, Brian, University of Central Florida
- Abstract / Description
-
Tapered slot antennas (TSAs) have seen considerable application in the millimeter-wave portion of the spectrum. Desirable characteristics of TSAs include symmetric E- and H-plane antenna patterns, and broad non-resonant bandwidths. We investigate extension of TSA operation toward higher frequencies in the thermal infrared (IR), using a metal-oxide-metal diode as the detector. Several different infrared TSA design forms are fabricated using electron-beam lithography and specially developed...
Show moreTapered slot antennas (TSAs) have seen considerable application in the millimeter-wave portion of the spectrum. Desirable characteristics of TSAs include symmetric E- and H-plane antenna patterns, and broad non-resonant bandwidths. We investigate extension of TSA operation toward higher frequencies in the thermal infrared (IR), using a metal-oxide-metal diode as the detector. Several different infrared TSA design forms are fabricated using electron-beam lithography and specially developed thin-film processes. The angular antenna patterns of TSA-coupled diodes are measured at 10.6 micrometer wavelength in both E- and H-planes, and are compared to results of finite-element electromagnetic modeling using Ansoft HFSS. Parameter studies are carried out, correlating the geometric and material properties of several TSA design forms to numerical-model results and to measurements. A significant increase in antenna gain is noted for a dielectric-overcoat design. The traveling-wave behavior of the IR TSA structure is investigated using scattering near-field microscopy. The measured near-field data is compared to HFSS results. Suggestions for future research are included.
Show less - Date Issued
- 2012
- Identifier
- CFE0004376, ucf:49395
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004376
- Title
- Frequency Selective Detection of Infrared Radiation in Uncooled Optical Nano-Antenna Array.
- Creator
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Modak, Sushrut, Chanda, Debashis, Schoenfeld, Winston, Fathpour, Sasan, University of Central Florida
- Abstract / Description
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Mid-infrared (mid-IR) detection and imaging over atmospheric transparent 3-5 ?m and 8-12 ?m bands are increasingly becoming important for various space, defense and civilian applications. Various kinds of microbolometers offer uncooled detection of IR radiation. However, broadband absorption of microbolometers makes them less sensitive to spectrally resolved detection of infrared radiation and the fabrication is also very tedious involving multiple complex lithography steps. In this study, we...
Show moreMid-infrared (mid-IR) detection and imaging over atmospheric transparent 3-5 ?m and 8-12 ?m bands are increasingly becoming important for various space, defense and civilian applications. Various kinds of microbolometers offer uncooled detection of IR radiation. However, broadband absorption of microbolometers makes them less sensitive to spectrally resolved detection of infrared radiation and the fabrication is also very tedious involving multiple complex lithography steps. In this study, we designed an optical nano-antenna array based detector with narrow frequency band of operation. The structure consists of a two-element antenna array comprised of a perforated metallic hole array coupled with an underneath disk array which trap incident radiation as dipole currents. The energy is dissipated as electron plasma loss on the hole-disk system inducing close to ~100% absorption of the incident radiation. This near perfect absorption originates from simultaneous zero crossing of real component of permittivity and permeability due to the geometrical arrangement of the two antenna elements which nullifies overall charge and current distributions, prohibiting existence of any propagating electromagnetic modes at resonance. Moreover, the continuous perforated film allows probing of the induced (")micro-current(") plasma loss on each nano hole-disk pair via a weak bias current. Such optical antenna design enables flexible scaling of detector response over the entire mid-infrared regime by change in the antenna dimensions. Furthermore, the development of simple nanoimprint lithography based large area optical antenna array fabrication technique facilitates formation of low cost frequency selective infrared detectors.
Show less - Date Issued
- 2014
- Identifier
- CFE0005845, ucf:50932
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005845
- Title
- High Efficiency and Wide Color Gamut Liquid Crystal Displays.
- Creator
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Luo, Zhenyue, Wu, Shintson, Kik, Pieter, Schoenfeld, Winston, Fang, Jiyu, University of Central Florida
- Abstract / Description
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Liquid crystal display (LCD) has become ubiquitous and indispensable in our daily life. Recently, it faces strong competition from organic light emitting diode (OLED). In order to maintain a strong leader position, LCD camp has an urgent need to enrich the color performance and reduce the power consumption. This dissertation focuses on solving these two emerging and important challenges. In the first part of the dissertation we investigate the quantum dot (QD) technology to improve the both...
Show moreLiquid crystal display (LCD) has become ubiquitous and indispensable in our daily life. Recently, it faces strong competition from organic light emitting diode (OLED). In order to maintain a strong leader position, LCD camp has an urgent need to enrich the color performance and reduce the power consumption. This dissertation focuses on solving these two emerging and important challenges. In the first part of the dissertation we investigate the quantum dot (QD) technology to improve the both the color gamut and the light efficiency of LCD. QD emits saturated color and grants LCD the capability to reproduce color vivid images. Moreover, the QD emission spectrum can be custom designed to match to transmission band of color filters. To fully take advantage of QD's unique features, we propose a systematic modelling of the LCD backlight and optimize the QD spectrum to simultaneously maximize the color gamut and light efficiency. Moreover, QD enhanced LCD demonstrates several advantages: excellent ambient contrast, negligible color shift and controllable white point. Besides three primary LCD, We also present a spatiotemporal four-primary QD enhanced LCD. The LCD's color is generated partially from time domain and partially from spatial domain. As a result, this LCD mode offers 1.5(&)#215; increment in spatial resolution, 2(&)#215; brightness enhancement, slightly larger color gamut and mitigated LC response requirement (~4ms). It can be employed in the commercial TV to meet the challenging Energy star 6 regulation. Besides conventional LCD, we also extend the QD applications to liquid displays and smart lighting devices. The second part of this dissertation focuses on improving the LCD light efficiency. Conventional LCD system has fairly low light efficiency (4%~7%) since polarizers and color filters absorb 50% and 67% of the incoming light respectively. We propose two approaches to reduce the light loss within polarizers and color filters. The first method is a polarization preserving backlight system. It can be combined with linearly polarized light source to boost the LCD efficiency. Moreover, this polarization preserving backlight offers high polarization efficiency (~77.8%), 2.4(&)#215; on-axis luminance enhancement, and no need for extra optics films. The second approach is a LCD backlight system with simultaneous color/polarization recycling. We design a novel polarizing color filter with high transmittance ((>)90%), low absorption loss (~3.3%), high extinction ratio ((>)10,000:1) and large angular tolerance (up to (&)#177;50?). This polarizing color filter can be used in LCD system to introduce the color/polarization recycling and accordingly boost LCD efficiency by ~3 times. These two approaches open new gateway for ultra-low power LCDs. In the final session of this dissertation, we demonstrate a low power and color vivid reflective liquid crystal on silicon (LCOS) display with low viscosity liquid crystal mixture. Compared with commercial LC material, the new LC mixture offers ~4X faster response at 20oC and ~8X faster response at ?20oC. This fast response LC material enables the field-sequential-color (FSC) driving for power saving. It also leads to several attractive advantages: sub-millisecond response time at room temperature, vivid color even at ?20oC, high brightness, excellent ambient contrast ratio, and suppressed color breakup. With this material improvement, LCOS display can be promising for the emerging wearable display market.
Show less - Date Issued
- 2015
- Identifier
- CFE0006225, ucf:51078
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006225
- Title
- Atmospheric Pressure Chemical Vapor Deposition of Functional Oxide Materials for Crystalline Silicon Solar Cells.
- Creator
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Davis, Kristopher, Schoenfeld, Winston, Likamwa, Patrick, Moharam, Jim, Habermann, Dirk, University of Central Florida
- Abstract / Description
-
Functional oxides are versatile materials that can simultaneously enable efficiency gains and cost reductions in crystalline silicon (c-Si) solar cells. In this work, the deposition of functional oxide materials using atmospheric pressure chemical vapor deposition (APCVD) and the integration of these materials into c-Si solar cells are explored. Specifically, thin oxide films and multi-layer film stacks are utilized for the following purposes: (1) to minimize front surface reflectance without...
Show moreFunctional oxides are versatile materials that can simultaneously enable efficiency gains and cost reductions in crystalline silicon (c-Si) solar cells. In this work, the deposition of functional oxide materials using atmospheric pressure chemical vapor deposition (APCVD) and the integration of these materials into c-Si solar cells are explored. Specifically, thin oxide films and multi-layer film stacks are utilized for the following purposes: (1) to minimize front surface reflectance without increasing parasitic absorption within the anti-reflection coating(s); (2) to maximize internal back reflectance of rear passivated cells, thereby increasing optical absorption of weakly absorbed long wavelength photons (? (>) 900 nm); (3) to minimize recombination losses by providing excellent surface passivation; and (4) to improve doping processes during cell manufacturing (e.g., emitter and surface field formation) by functioning as highly controllable dopant sources compatible with in-line diffusion processes. The oxide materials deposited by APCVD include amorphous and polycrystalline titanium oxide, aluminum oxide, boron-doped aluminum oxide, silicon oxide, phosphosilicate glass, and borosilicate glass. The microstructure, optical properties, and electronic properties of these films are characterized for different deposition conditions. Additionally, the impact of these materials on the performance of different types of c-Si solar cells is presented using both simulated and experimental current-voltage curves.
Show less - Date Issued
- 2015
- Identifier
- CFE0005599, ucf:50267
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005599
- Title
- Advanced liquid crystal materials for display and photonic applications.
- Creator
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Chen, Yuan, Wu, Shintson, Zeldovich, Boris, Schoenfeld, Winston, Fang, Jiyu, University of Central Florida
- Abstract / Description
-
Thin-film-transistor (TFT) liquid crystal display (LCD) has been widely used in smartphones, pads, laptops, computer monitors, and large screen televisions, just to name a few. A great deal of effort has been delved into wide viewing angle, high resolution, low power consumption, and vivid color. However, relatively slow response time and low transmittance remain as technical challenges. To improve response time, several approaches have been developed, such as low viscosity liquid crystals,...
Show moreThin-film-transistor (TFT) liquid crystal display (LCD) has been widely used in smartphones, pads, laptops, computer monitors, and large screen televisions, just to name a few. A great deal of effort has been delved into wide viewing angle, high resolution, low power consumption, and vivid color. However, relatively slow response time and low transmittance remain as technical challenges. To improve response time, several approaches have been developed, such as low viscosity liquid crystals, overdrive and undershoot voltage schemes, thin cell gap with a high birefringence liquid crystal, and elevated temperature operation. The state-of-the-art gray-to-gray response time of a nematic LC device is about 5 ms, which is still not fast enough to suppress the motion picture image blur. On the other hand, the LCD panel's transmittance is determined by the backlight, polarizers, TFT aperture ratio, LC transmittance, and color filters. Recently, a fringe-field-switching mode using a negative dielectric anisotropy (??) LC (n-FFS) has been demonstrated, showing high transmittance (98%), single gamma curve, and cell gap insensitivity. It has potential to replace the commonly used p-FFS (FFS using positive ?? LC) for mobile displays.With the urgent need of submillisecond response time for enabling color sequential displays, polymer-stabilized blue phase liquid crystal (PS-BPLC) has become an increasingly important technology trend for information display and photonic applications. BPLCs exhibit several attractive features, such as reasonably wide temperature range, submillisecond gray-to-gray response time, no need for alignment layer, optically isotropic voltage-off state, and large cell gap tolerance. However, some bottlenecks such as high operation voltage, hysteresis, residual birefringence, and slow charging issue due to the large capacitance, remain to be overcome before their widespread applications can be realized. The material system of PS-BPLC, including nematic LC host, chiral dopant, and polymer network, are discussed in detail. Each component plays an essential role affecting the electro-optic properties and the stability of PS-BPLC.In a PS-BPLC system, in order to lower the operation voltage the host LC usually has a very large dielectric anisotropy (??(>)100), which is one order of magnitude larger than that of a nematic LC. Such a large ?? not only leads to high viscosity but also results in a large capacitance. High viscosity slows down the device fabrication process and increases device response time. On the other hand, large capacitance causes slow charging time to each pixel and limits the frame rate. To reduce viscosity, we discovered that by adding a small amount (~6%) of diluters, the response time of the PS-BPLC is reduced by 2X-3X while keeping the Kerr constant more or less unchanged. Besides, several advanced PS-BPLC materials and devices have been demonstrated. By using a large ?? BPLC, we have successfully reduced the voltage to (<)10V while maintaining submillisecond response time. Finally we demonstrated an electric field-indeced monodomain PS-BPLC, which enables video-rate reflective display with vivid colors. The highly selective reflection in polarization makes it promising for photonics application.Besides displays in the visible spectral region, LC materials are also very useful electro-optic media for near infrared and mid-wavelength infrared (MWIR) devices. However, large absorption has impeded the widespread application in the MWIR region. With delicate molecular design strategy, we balanced the absorption and liquid crystal phase stability, and proposed a fluoro-terphenyl compound with low absorption in both MWIR and near IR regions. This compound serves as an important first example for future development of low-loss MWIR liquid crystals, which would further expand the application of LCs for amplitude and/or phase modulation in MWIR region.
Show less - Date Issued
- 2014
- Identifier
- CFE0005314, ucf:50531
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005314
- Title
- Multifunctional, Multimaterial Particle Fabrication Via an In-Fiber Fluid Instability.
- Creator
-
Kaufman, Joshua, Abouraddy, Ayman, Schoenfeld, Winston, Christodoulides, Demetrios, Seal, Sudipta, University of Central Florida
- Abstract / Description
-
Spherical micro- and nano-particles have found widespread use in many various applications from paint to cosmetics to medicine. Due to the multiplicity of desired particle material(s), structure, size range, and functionality, many approaches exist for generating such particles. Bottom-up methods such as chemical synthesis have a high yield and work with a wide range of materials; however, these processes typically lead to large polydispersity and cannot produce structured particles. Top-down...
Show moreSpherical micro- and nano-particles have found widespread use in many various applications from paint to cosmetics to medicine. Due to the multiplicity of desired particle material(s), structure, size range, and functionality, many approaches exist for generating such particles. Bottom-up methods such as chemical synthesis have a high yield and work with a wide range of materials; however, these processes typically lead to large polydispersity and cannot produce structured particles. Top-down approaches such as microfluidics overcome the polydispersity issue and may produce a few different structures in particles, but at lower rates and only at the micro-scale. A method that can efficiently produce uniformly-sized, structured particles out of a variety of materials and at both the micro- and nano-scales does not yet exist.Over the past few years, I have developed an in-fiber particle fabrication method that relies on a surface tension-driven fluid instability, the Plateau-Rayleigh capillary instability (PRI). Thermal treatment of a multimaterial core/cladding fiber induces the PRI, causing the initially intact core to break up into a periodic array of uniformly-sized spherical particles. During this time, I have demonstrated that this method can produce particles from both polymers and glasses, in a multiplicity of structures, and from diameters of over 1 mm down to 20 nm. Furthermore, by using a stack-and-draw method, a high density of cores may be incorporated into a single fiber, making the in-fiber PRI approach a highly scalable process. Finally, I have shown that it is possible to add dopants to the particles to give them functionality. By structuring the particles, it is thus possible to fabricate multi-functional particles whose functionalities may be allocated arbitrarily throughout the volume of the particles.
Show less - Date Issued
- 2014
- Identifier
- CFE0005357, ucf:50479
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005357
- Title
- Fabrication of Metallic Antenna Arrays using Nanoimprint Lithography.
- Creator
-
Lin, Yu-wei, Kik, Pieter, Schoenfeld, Winston, Fathpour, Sasan, University of Central Florida
- Abstract / Description
-
This Thesis describes the development of a cost-effective process for patterning nanoscale metal antenna arrays. Soft ultraviolet (UV) Nanoimprint Lithography (NIL) into bilayer resist was chosen since it enables repeatable large-scale replication of nanoscale patterns with good lift-off properties using a simple low-cost process. Nanofabrication often involves the use of Electron Beam Lithography (EBL) which enables the definition of nanoscale patterns on small sample regions, typically (
Show moreThis Thesis describes the development of a cost-effective process for patterning nanoscale metal antenna arrays. Soft ultraviolet (UV) Nanoimprint Lithography (NIL) into bilayer resist was chosen since it enables repeatable large-scale replication of nanoscale patterns with good lift-off properties using a simple low-cost process. Nanofabrication often involves the use of Electron Beam Lithography (EBL) which enables the definition of nanoscale patterns on small sample regions, typically (<) 1 mm2. However its sequential nature makes the large scale production of nanostructured substrates using EBL cost-prohibitive. NIL is a pattern replication method that can reproduce nanoscale patterns in a parallel fashion, allowing the low-cost and rapid production of a large number of nano-patterned samples based on a single nanostructured master mold.Standard NIL replicates patterns by pressing a nanostructured hard mold into a soft resist layer on a substrate resulting in exposed substrate regions, followed by an optional Reactive Ion Etching (RIE) step and the subsequent deposition of e.g. metal onto the exposed substrate area. However, non-vertical sidewalls of the features in the resist layer resulting from an imperfect hard mold, from reflow of the resist layer, or from isotropic etching in the RIE step may cause imperfect lift-off. To overcome this problem, a bilayer resist method can be used. Using stacked resist layers with different etch rates, undercut structures can be obtained after the RIE step, allowing for easy lift-off even when using a mold with non-vertical sidewalls. Experiments were carried out using a nanostructured negative SiO2 master mold. Various material combinations and processing methods were explored. The negative master mold was transferred to a positive soft mold, leaving the original master mold unaltered. The soft mold consisted of a 5 ?m thick top Poly(methyl methacrylate) (PMMA), or Polyvinyl alcohol (PVA) layer, a 1.5 mm thick Polydimethylsiloxane (PDMS) buffer layer, and a glass supporting substrate. The soft mold was pressed into a bilayer of 300 nm PMMA and 350 nm of silicon based UV-curable resist that was spin-coated onto a glass slide, and cured using UV radiation. The imprinted patterns were etched using RIE, exposing the substrate, followed by metal deposition and lift-off. The experiments show that the use of soft molds enables successful pattern transfer even in the presence of small dust particles between the mold and the resist layer. Feature sizes down to 280 nm were replicated successfully.
Show less - Date Issued
- 2013
- Identifier
- CFE0005026, ucf:49990
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005026
- Title
- fast-response liquid crystals for photonic and display applications.
- Creator
-
Sun, Jie, Wu, Shintson, Likamwa, Patrick, Schoenfeld, Winston, Wu, Xinzhang, University of Central Florida
- Abstract / Description
-
Liquid crystals (LCs) are attractive for many applications such as information displays, spatial light modulators, and adaptive optics because the optical properties of these devices are electrically tunable. For most display and photonic applications, response time is a critical parameter especially for spatial light modulators that requires at least 2? phase change. This problem gets more severe as the wavelength increases because a thicker LC layer is needed, which results in a slower...
Show moreLiquid crystals (LCs) are attractive for many applications such as information displays, spatial light modulators, and adaptive optics because the optical properties of these devices are electrically tunable. For most display and photonic applications, response time is a critical parameter especially for spatial light modulators that requires at least 2? phase change. This problem gets more severe as the wavelength increases because a thicker LC layer is needed, which results in a slower response time. A typical E7 nematic liquid crystal cell with 2? phase change shows a response time longer than 100 ms at room temperature, which is too slow. Therefore, solutions for achieving fast response time are in high demand.In this dissertation, several approaches for achieving submillisecond response time are investigated. In Chapter 2, we begin by introducing dual frequency liquid crystals (DFLCs) which provide possibility to achieve submillisecond rise time and decay time. We developed a DFLC mixture with a record-high birefringence (?n=0.39 at ?=633nm) based on phenyl-tolane compounds, which exhibit a positive dielectric anisotropy (??) and modest dielectric relaxation frequency. In Chapter 3, a phase modulator with 4? phase change and 400 (&)#181;s average gray-to-gray response time is demonstrated using a sheared polymer network liquid crystal (SPNLC). This device exhibits a low scattering at ?=532 nm due to the employed material set and shearing technique. We also discuss the application of SPNLCs for 3D displays.In Chapter 4, we studied the temperature effect on the splay elastic constant of polymer network liquid crystal (PNLC). Due to the existence of polymer network, the temperature dependent splay elastic constant of the LC cell deviates from the model for nematic LCs. In Chapter 5, we focus on PNLC light modulators. This technology is attractive because it can achieve submillisecond response time while maintaining a large phase change. However, the light scattering loss caused by grain boundaries of liquid crystal multi-domains at voltage-on state hinders the widespread application of PNLCs. By optimizing liquid crystal host, polymer, and proper curing process, we successfully eliminate light scattering from short wave infrared region (1.55 ?m) to visible range. In Chapter 6, we introduce a reconfigurable fabrication technique of tunable liquid crystal devices. Based on this technique and our scattering-free PNLCs, we developed a series of fast switching LC devices such as LC prism, grating and lens. The application of this technology in 3D lenticular lens development is also discussed. This technique provides a great flexibility for designing and fabricating LC photonic devices with desired refractive index profile.
Show less - Date Issued
- 2013
- Identifier
- CFE0005063, ucf:49968
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005063
- Title
- Photonic Filtering for Applications in Microwave Generation and Metrology.
- Creator
-
Bagnell, Marcus, Delfyett, Peter, Schoenfeld, Winston, Li, Guifang, Peale, Robert, University of Central Florida
- Abstract / Description
-
This work uses the photonic filtering properties of Fabry-Perot etalons to show improvements in the electrical signals created upon photodetection of the optical signal. First, a method of delay measurement is described which uses multi-heterodyne detection to find correlations in white light signals at 20 km of delay to sub millimeter resolution. By filtering incoming white light with a Fabry-Perot etalon, the pseudo periodic signal is suitable for measurement by combining and photodetecting...
Show moreThis work uses the photonic filtering properties of Fabry-Perot etalons to show improvements in the electrical signals created upon photodetection of the optical signal. First, a method of delay measurement is described which uses multi-heterodyne detection to find correlations in white light signals at 20 km of delay to sub millimeter resolution. By filtering incoming white light with a Fabry-Perot etalon, the pseudo periodic signal is suitable for measurement by combining and photodetecting it with an optical frequency comb. In this way, optical data from a large bandwidth can be downconverted and sampled on low frequency electronics. Second, a high finesse etalon is used as a photonic filter inside an optoelectronic oscillator (OEO). The etalon's narrow filter function allows the OEO loop length to be extremely long for a high oscillator quality factor while still suppressing unwanted modes below the noise floor. The periodic nature of the etalon allows it to be used to generate a wide range of microwave and millimeter wave tones without degradation of the RF signal.
Show less - Date Issued
- 2014
- Identifier
- CFE0005457, ucf:50396
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005457
- Title
- Optically isotropic liquid crystals for display and photonic applications.
- Creator
-
Yan, Jin, Wu, Shintson, Zeldovich, Boris, Schoenfeld, Winston, Fang, Jiyu, University of Central Florida
- Abstract / Description
-
For the past few decades, tremendous progress has been made on liquid crystal display (LCD) technologies in terms of stability, resolution, contrast ratio, and viewing angle. The remaining challenge is response time. The state-of-the-art response time of a nematic liquid crystal is a few milliseconds. Faster response time is desirable in order to reduce motion blur and to realize color sequential display using RGB LEDs, which triples the optical efficiency and resolution density. Polymer...
Show moreFor the past few decades, tremendous progress has been made on liquid crystal display (LCD) technologies in terms of stability, resolution, contrast ratio, and viewing angle. The remaining challenge is response time. The state-of-the-art response time of a nematic liquid crystal is a few milliseconds. Faster response time is desirable in order to reduce motion blur and to realize color sequential display using RGB LEDs, which triples the optical efficiency and resolution density. Polymer-stabilized blue phase liquid crystal (PS-BPLC) is a strong candidate for achieving fast response time because its self-assembled cubic structure greatly reduces the coherence length. The response time is typically in the submillisecond range and can even reach microsecond under optimized conditions. Moreover, it exhibit several attractive features, such as no need for surface alignment layer, intrinsic wide viewing angle, and cell gap insensitivity if an in-plane-switching (IPS) cell is employed. In this dissertation, recent progresses in polymer-stabilized blue phases, or more generally optically-isotropic liquid crystals, are presented. Potential applications in display and photonic devices are also demonstrated.In Chapter 1, a brief introduction of optically isotropic liquid crystals is given. In Chapter 2, we investigate each component of polymer-stabilized blue phase materials and provide guidelines for material preparation and optimization. In Chapter 3, the electro-optical properties of PS-BPLCs, including electric-field-induced birefringence and dynamic behaviors are characterized. Theoretical models are proposed to explain the physical phenomena. Good agreements between experimental data and models are obtained. The proposed models also provide useful guidelines for both material and device optimizations. Four display and photonic devices using PS-BPLCs are demonstrated in Chapter 4. First, by red-shifting the Bragg reflection and using circular polarizers, we reduce the LCD driving voltage by 35% as compared to a short-pitch BPLC while maintaining high contrast ratio and submillisecond response time. Second, a turning film which is critically needed for widening the viewing angle of a vertical field switching (VFS) BPLC mode is designed. With this film, the viewing angle of VFS is widened to (&)#177; 80(&)deg; in horizontal direction and (&)#177; 50(&)deg; in vertical direction. Without this turning film, the viewing angle is only (&)#177;30(&)deg;, which is too narrow for most applications. Third, a reflective BPLC display with vivid colors, submillisecond response time, and natural grayscales is demonstrated for the first time. The proposed BPLC reflective display opens a new gateway for 3D reflective displays; it could make significant impact to display industry. Finally, we demonstrate a tunable phase grating with a high diffraction efficiency of 40% and submillisecond response time. This tunable grating exhibits great potential for photonic and display applications, such as optical interconnects, beam steering, and projection displays.
Show less - Date Issued
- 2013
- Identifier
- CFE0005279, ucf:50551
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005279
- Title
- monolithically Integrated Broadly Tunable Light Emitters based on Selectively Intermixed Quantum Wells.
- Creator
-
Zakariya, Abdullah, Likamwa, Patrick, Li, Guifang, Wahid, Parveen, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
-
A monolithically integrated broadly tunable MQW laser that utilizes a combined impurity-free vacancy disordering (IFVD) of quantum wells and optical beam steering techniques is proposed and investigated experimentally. The device consists of a beam-steering section and an optical amplifier section fabricated on a GaAs/AlGaAs quantum well (QW) p-i-n heterostructure. The beam steering section forms a reconfigurable optical waveguide that can be moved laterally by applying separately controlled...
Show moreA monolithically integrated broadly tunable MQW laser that utilizes a combined impurity-free vacancy disordering (IFVD) of quantum wells and optical beam steering techniques is proposed and investigated experimentally. The device consists of a beam-steering section and an optical amplifier section fabricated on a GaAs/AlGaAs quantum well (QW) p-i-n heterostructure. The beam steering section forms a reconfigurable optical waveguide that can be moved laterally by applying separately controlled electrical currents to two parallel contact stripes. The active core of the gain section is divided in into selectively intermixed regions. The selective intermixing of the QW in the gain section results in neighboring regions with different optical bandgaps. The wavelength tuning is accomplished by steering the amplified optical beam through the selected region where it experiences a peak in the gain spectrum determined by the degree of intermixing of the QW. The laser wavelength tunes to the peak in the gain spectrum of that region. The IFVD technique relies on a silica (SiO2) capped rapid thermal annealing and it has been found that the degree of intermixing of the QW with the barrier material is dependent on the thickness of the SiO2 film. The QW sample is first encapsulated with a 400nm thick SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD). In the gain section, the SiO2 film is selectively etched using multiple photolithographic and reactive ion etching steps whereas the SiO2 film is left intact in all the remaining areas including the beam-steering section. The selective area quantum well intermixing is then induced by a single rapid thermal annealing step at 975(&)deg;C for a 20s duration to realize a structure with quantum well that has different bandgaps in the key regions. Optical characterizations of the intermixed regions have shown a blue shift of peak of the electroluminescence emission of 5nm, 16nm and 33nm for the uncapped, 100nm and 200nm respectively when compared to the as grown sample. The integrated laser exhibited a wavelength tuning range of 17nm (799nm to 816nm). Based on the same principle of QW selective intermixing, we have also designed and fabricated a monolithically integrated multi-wavelength light emitting diode (LED). The LED emits multiple wavelength optical beams from one compact easy to fabricate QW structure. Each wavelength has an independent optical power control, allowing the LED to emit one or more wavelengths at once. The material for the LED is the same AlGaAs/GaAs QW p-i-n heterostructure described above. The device is divided into selectively intermixed regions on a single QW structure using IFVD technique to create localized intermixed regions. Two different designs have been implemented to realize either an LED with multiple output beams of different wavelengths or an LED with a single output beam that has dual wavelength operation capabilities. Experimental results of the multiple output beams LED have demonstrated electrically controlled optical emission of 800nm, 789nm and 772nm. The single output LED has experimentally been shown to produce wavelength emission of 800nm and/or 772nm depending on electrical activation of the two aligned intermixed regions.
Show less - Date Issued
- 2013
- Identifier
- CFE0005284, ucf:50560
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005284
- Title
- The Impact of Growth Conditions on Cubic ZnMgO Ultraviolet Sensors.
- Creator
-
Boutwell, Ryan, Schoenfeld, Winston, Likamwa, Patrick, Kik, Pieter, Chernyak, Leonid, University of Central Florida
- Abstract / Description
-
Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated....
Show moreCubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into the plasma. Material review includes the effect of changing conditions on the film's optical transmission, surface morphology, growth rate, crystalline phase, and stoichiometric composition. Oxygen plasma composition was investigated by spectroscopic analysis under varying oxygen flow rate and applied RF power and is correlated to device performance. Ni/Mg/Au interdigitated metal-semiconductor-metal detectors were formed to explore spectral responsivity and UV-Visible rejection ratio (RR). Zn1-xMgxO films ranged in Mg composition from x = 0.45 - 1.0. Generally, x increased with increasing substrate temperature and Mg source flux, and decreased with increasing oxygen flow rate and RF power. Increasing x was correlated with decreased peak responsivity intensity and increased RR. Device performance was improved by increasing the ratio of O to O+ atoms and minimizing O2+ in the plasma. Peak responsivity as high as 500 A/W was observed in visible-blind phase-segregated Zn1-xMgxO devices, while cubic phase solar-blind devices demonstrated peak responsivity as high as 12.6 mA/W, and RR of three orders of magnitude. Optimal conditions are predicted for the formation of DUV Zn1-xMgxO sensors.
Show less - Date Issued
- 2013
- Identifier
- CFE0005087, ucf:50735
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005087
- Title
- Spin and Charge Transport in Graphene Based Devices.
- Creator
-
Anguera Antonana, Marta, Del Barco, Enrique, Peale, Robert, Bhattacharya, Aniket, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
-
The present dissertation is comprehended in two main parts. The first part is focused on understanding the mechanisms behind spin current to charge current interconversion (i.e. the spin Hall angle), where the spin current is generated by means of spin pumping. The measurement of a positive spin Hall angle of magnitude 0.004 in Uranium is reported in Chapter 2. These results support the idea that the electronic configuration may be at least as important as the atomic number in governing spin...
Show moreThe present dissertation is comprehended in two main parts. The first part is focused on understanding the mechanisms behind spin current to charge current interconversion (i.e. the spin Hall angle), where the spin current is generated by means of spin pumping. The measurement of a positive spin Hall angle of magnitude 0.004 in Uranium is reported in Chapter 2. These results support the idea that the electronic configuration may be at least as important as the atomic number in governing spin Hall effects. In Chapter 3, the design of a spintronics device designed to interconvert charge and spin currents in CVD graphene is presented. The second part of the thesis is centered in the study of transport through single molecules with the use of three-terminal devices. The first evidence of a molecular double quantum dot is detailed in Chapter 5. The conclusions are supported by self-assembled monolayers (SAMs) and single-electron transistors (SETs) measurements. Using gold electrodes for SETs measurements has its disadvantages, two of the main ones being: the junctions are not stable at room temperature and it does not allow for transport measurements in the presence of light. Graphene electrodes, on the other hand, have been reported to be stable at temperatures above room temperature and have no absorption in the visible range. Along those lines, the development of a multilayer graphene-based SET is reported in Chapter 6. Finally, a new technique, based on CVD graphene transistors, that will allow three-terminal measurements on an STM is described in Chapter 7.
Show less - Date Issued
- 2017
- Identifier
- CFE0006715, ucf:51897
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006715
