Current Search: Shunmugavelu, Arun (x)
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Title
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REDISTRIBUTION OF MANGANESE ION IMPLANTED IN SILICON.
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Creator
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Shunmugavelu, Arun, An, Linan, University of Central Florida
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Abstract / Description
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Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.
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Date Issued
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2007
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Identifier
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CFE0001909, ucf:47477
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0001909
