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Title: ELECTRICAL PROPERTIES OF REACTIVE MAGNETRON SPUTTERED VANADIUM OXIDE THIN FILMS.
Creator: Lam, Vu, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: It is well known that vanadium oxide can take many different forms. However for this study, only the amorphous phase was investigated. Amorphous vanadium oxide (VOx) thin films were deposited on thermally grown silicon dioxide by DC magnetron sputtering using a vanadium metal target in an argon / oxygen atmosphere. The driving force of this study was to investigate the temperature coefficient of resistance (TCR) and low resistivity in the amorphous films. Sheet resistance is very sensitive to...
Show moreIt is well known that vanadium oxide can take many different forms. However for this study, only the amorphous phase was investigated. Amorphous vanadium oxide (VOx) thin films were deposited on thermally grown silicon dioxide by DC magnetron sputtering using a vanadium metal target in an argon / oxygen atmosphere. The driving force of this study was to investigate the temperature coefficient of resistance (TCR) and low resistivity in the amorphous films. Sheet resistance is very sensitive to small changes in temperature, making amorphous VOx very attractive to thermal sensor applications such as infrared detectors. To form the vanadium oxide, physical vapor deposition of vanadium metal at 200 Watts of DC power was used with varied amounts of oxygen in a primary argon atmosphere. During deposition, the concentration of oxygen was controlled by using a 20:80 mixture of O2 and Ar in conjunction with high purity Ar supply. Flow control techniques were derived and calculated to predict the percentage of oxygen before and during deposition to understand the reaction between the vanadium metal and oxygen. Concentrations of O2 in the deposition chamber were varied from 0.025% to 3.000% with the purpose of gaining an understanding of the affects of O2 concentration in amorphous VOx films. TCR and resistivity measurements were performed to characterize the films. The results showed a resistivity decrement with decreasing oxygen concentration. The films with lower concentrations of oxygen were found to have better TCR values then those with higher percentages of oxygen. To further reduce the resistivity of the VOx and maintain the TCR value, co-sputtering of noble metals (gold and platinum) with VOx was studied. The metals were co-sputtered at various power settings with the vanadium oxide reactive process at a fixed percentage of oxygen. The TCR and resistivity results showed that the additions of Au and Pt into VOx reduced the resistivity. However, only Au was found to improve TCR value. The results of these experiments showed that by reducing the amount of oxygen in the film, the ratio between TCR and resistivity further improved. Mechanical limits of the gas delivery system and the relatively low sensitivity to oxygen detection, gas flow control is limited when sputtering with only a single target. Several targets were therefore used during sputtering to allow for higher gas flows thereby increasing the effective sensitivity of the oxygen control. To increase the amount of available vanadium and still have a sufficient amount of detectable oxygen present, four vanadium targets were sputtered simultaneously. The measurements appeared to have a trend of increase in TCR values with a decrease in resistivity. For an ideal case, thermal sensor material should incorporate high TCR and low resistivity for better sensitivity. The amorphous vanadium oxide deposited by 4 vanadium targets seems to satisfy that requirement. In conclusion, a novel method has been established to fabricate amorphous vanadium oxide thin films with high TCR and low resistivity for infrared detectors.
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Date Issued: 2006
Identifier: CFE0001424, ucf:47049
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001424

Title: GIANT MAGNETO-IMPEDANCE EFFECT IN THIN FILM LAYERED STRUCTURES.
Creator: Borge, Amruta, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: Recently, the giant magneto impedance (GMI) effect has been studied extensively because of its potential applications in sensor elements. The focus of this thesis work is to explore different compositions and processing conditions for CoSiB and NiFe thin films to obtain the soft magnetic properties and to evaluate their potential use in GMI sensor applications. Prior to this study, an MH Looper was constructed, which was extremely important and provided the basic magnetic characterization of...
Show moreRecently, the giant magneto impedance (GMI) effect has been studied extensively because of its potential applications in sensor elements. The focus of this thesis work is to explore different compositions and processing conditions for CoSiB and NiFe thin films to obtain the soft magnetic properties and to evaluate their potential use in GMI sensor applications. Prior to this study, an MH Looper was constructed, which was extremely important and provided the basic magnetic characterization of the many ferromagnetic thin films deposited during this work. The CoSiB films were co-sputter deposited in an ultra high vacuum chamber. Films with different relative compositions of Co, Si and B were deposited by varying respective target powers. Different substrate bias conditions were also studied. Also, NiFe films were studied by varying relative composition by variation of target powers and also by variation deposition pressure. The effect of annealing was also studied. The magnetic and electrical characterization of these films was done using the MH Looper, Quad-pro four-point probe resistivity measurement, and Low Frequency Impedance analyzer HP4192A. Finally, CoSiB films with soft magnetic properties were obtained with optimized set of deposition parameters. A sample for GMI measurement was prepared, consisting of a multilayer thin film structure: CoSiB 200nm/ Cu 400nm / CoSiB 200nm. A serpentine pattern was generated on this film by photolithography technique. After obtaining the pattern, GMI studies were performed using LF impedance analyzer. This instrument was capable of providing the drive frequency in the range of 5Hz to 13MHz, but the impedance mis-match of the test fixture limited useful measurements to 9MHz. The highest GMI ratio observed was 6.2% at a 21 Oe longitudinal magnetic bias field at an 8MHz drive frequency. Transverse permeability measurements were performed by the use of two magnetic field axes of the MH Looper. The permeability behavior of the device reflects the impedance behavior with the external field. Permeability measurements were also performed on NiFe GMI Device with NiFe 600nm/ Cu 1200nm / NiFe 600nm sandwich structure. This sample was not successfully patterned and hence the impedance measurements could not be performed. Correlation of the magnetic properties of the structures was studied with the impedance responses.
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Date Issued: 2005
Identifier: CFE0000454, ucf:46394
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000454

Title: EFFECT OF ANNEALING ON COPPER THIN FILMS:THE CLASSICAL SIZE EFFECT AND AGGLOMERATION.
Creator: Gadkari, Parag, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: With continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising...
Show moreWith continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising from surface and grain boundaries. The total resistivity of metals depends on the electron scattering due to impurities, phonons, surfaces, grain boundaries, and other crystal defects. Managing the size effect in a practical and manufacturing way is of major concern to the microelectronics industry. Since each of the processes (phonon, surface and grain boundary scattering) adds to the resistivity and are interrelated, it further complicates managing the size effect. However, these effects have been separately studied. In this work, the effect of annealing on the classical size effect in Cu thin films deposited on SiO2 substrate is investigated. Polycrystalline Cu thin films having thicknesses in the range of 10nm to 200nm were ultra high vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. The un-annealed Cu thin films exhibit higher resistivity than the annealed films. The resistivities of un-annealed films were in good agreement with Mayadas and Shatzkes model. When annealed the films undergoes grain growth resulting in lowering the resistivities by about 20%-30% thereby confirming the role of grain size on resistivity of the film. However, there is a limit to annealing, i.e. agglomeration phenomenon. Agglomeration is a thermally activated process resulting in a reduction of the free energy of the film–substrate system and can occur well below the melting point of the material by surface and interfacial diffusion. The reduction of film-substrate interfacial energy, film-surface interfacial energy and stresses within the film are possible driving forces for agglomeration. This work also includes the study of agglomeration phenomenon. The agglomeration behavior of Cu is investigated and compared with that of Ru, Au and Pt thin films with thicknesses in the range of 10 nm to 100 nm UHV deposited on thermally grown SiO2 substrate. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play important part in deciding the mode of void growth in Au and Pt thin films. Lastly, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer, which in turn improves the resistivity of the thin film due to prolonged grain growth without film breakup.
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Date Issued: 2005
Identifier: CFE0000496, ucf:46363
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000496

Title: EFFECTS OF DEPOSITION TEMPERATURE AND POST DEPOSITION ANNEALING ON THE ELECTRICAL PROPERTIES OF BARIUM STRONTIUM TITANATE THIN FILM FOR EMBEDDED CAPACITOR APPLICATIONS.
Creator: Peelamedu Ranganathan, Raviprakash, Kalpathy. B, Sundaram, University of Central Florida
Abstract / Description: A higher degree of system level integration can be achieved by integrating the passive components into semiconductor devices, which seem to be an enabling technology for portable communication and modern electronic devices. Greater functionality, higher performance and increase in reliability can be achieved by miniaturizing and reducing the number of components in integrated circuits. The functional potential of small electronic devices can be enormously increased by implementing the...
Show moreA higher degree of system level integration can be achieved by integrating the passive components into semiconductor devices, which seem to be an enabling technology for portable communication and modern electronic devices. Greater functionality, higher performance and increase in reliability can be achieved by miniaturizing and reducing the number of components in integrated circuits. The functional potential of small electronic devices can be enormously increased by implementing the embedded capacitors, resistors and inductors. This would free up surface real estate allowing either a smaller footprint or more silicon devices to be placed on the same sized substrate. This thesis focuses on the effect of deposition temperature and post deposition annealing (PDA) in different gas ambient on the electrical properties of sputter deposited ferroelectric Barium Strontium Titanate (Ba0.5St0.5) TiO3 thin film capacitors. Approximately 2000Å of Barium Strontium Titanate (BST) thin film was deposited at different substrate temperatures (400,450,500 and 550◦C) on cleaned silicon substrates. These BST films were then annealed separately in 100% N2, 100% O2 and 10% O2 + 90% N2 at 575◦C in sputtering machine (PVD anneal) and a three zone annealing Lindberg furnace. The objective of this thesis was to compare the effect of PDA on the electrical properties of BST films deposited at different substrate temperatures between PVD annealing and furnace annealing. For this work, tantalum thin film was used as top and bottom electrode to fabricate the capacitors. BST thin film capacitors were fabricated and characterized for leakage current and dielectric breakdown. Roughness study on pre and post annealed BST films were done using optical profilometer. The capacitors were tested using HP impedance analyzer in the frequency range from 10Hz through 1 MHz. From the experiments, 100% O2 annealed furnace annealed BST thin film seem to have better dielectric constant, higher breakdown voltage and nominal capacitance density.
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Date Issued: 2004
Identifier: CFE0000314, ucf:46310
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000314

Title: GATE STACK AND CHANNEL ENGINEERING:STUDY OF METAL GATES AND GERMANIUM CHANNEL DEVICES.
Creator: Todi, Ravi, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: The continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technology within the sub-100 nm region requires an alternative high dielectric constant (high-κ) oxide layer to counter high tunneling leakage currents, a metallic gate electrode to address polysilicon depletion, boron penetration and high polysilicon sheet resistance, and high mobility channel materials to boost the CMOS performance. Metal gates can also offer improved thermal and chemical...
Show moreThe continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technology within the sub-100 nm region requires an alternative high dielectric constant (high-κ) oxide layer to counter high tunneling leakage currents, a metallic gate electrode to address polysilicon depletion, boron penetration and high polysilicon sheet resistance, and high mobility channel materials to boost the CMOS performance. Metal gates can also offer improved thermal and chemical stability, but their use requires that we improve our understanding of how the metal alloy phase, crystallographic orientation, and composition affect the electronic properties of the metal alloy-oxide interface. To replace n++ and p++ polysilicon gate electrodes and maintain scaled device performance requires metal gate electrodes with work functions within 0.2 eV of the silicon conduction and valence band edges, i.e., 5.0-5.2 and 4.1-4.3 eV, for PMOS and NMOS devices, respectively. In addition to work function and thermal/chemical stability, metal gates must be integrated into the CMOS process flow. It is the aim of this work to significantly expand our knowledge base in alloys for dual metal gates by carrying out detailed electrical and materials studies of the binary alloy systems of Ru with p-type metal Pt. Three n-type metals systems, Ru-Ta, Ru-Hf and Ru-Nb have also been partially investigated. This work also focuses on high mobility Ge p-MOSFETs for improved CMOS performance. DC magnetron sputtering has been used to deposit binary alloy films on thermally grown SiO2. The composition of the alloy films have been determined by Rutherford backscattering spectrometry and the identification of phases present have been made using x-ray and electron diffraction of samples. The microstructure of the phases of interest has been examined in the transmission electron microscope and film texture was characterized via x-ray diffraction. The electrical characterization includes basic resistivity measurements, and work function extraction. The work function has been determined from MOS capacitor and Schottky diodes. The need for electron and hole mobility enhancement and the progress in the development of high-κ gate stacks, has lead to renewed interest in Ge MOSFETs. The p-MOS mobility data for Ge channel devices have been reported. The results indicate greater than 2 x improvements in device mobility as compared to standard Si device. A low frequency noise assessment of silicon passivated Ge p-MOSFETs with a TiN/TaN/HfO2 gate stack has been made. For the first time we also report results on low frequency noise characterisation for a Ge P+- n junctions with and without Ni germanidation.
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Date Issued: 2007
Identifier: CFE0001554, ucf:47122
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001554

Title: PROCESS DEVELOPMENT FOR THE FABRICATION OF MESOSCALE ELECTROSTATIC VALVE ASSEMBLY.
Creator: Dhru, Shailini, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: This study concentrates on two of the main processes involved in the fabrication of electrostatic valve assembly, thick resist photolithography and wet chemical etching of a polyamide film. The electrostatic valve has different orifice diameters of 25, 50, 75 and 100 μm. These orifice holes are to be etched in the silicon wafer with deep reactive ion etching. The photolithography process is developed to build a mask of 15 μm thick resist pattern on silicon wafer. This photo layer...
Show moreThis study concentrates on two of the main processes involved in the fabrication of electrostatic valve assembly, thick resist photolithography and wet chemical etching of a polyamide film. The electrostatic valve has different orifice diameters of 25, 50, 75 and 100 μm. These orifice holes are to be etched in the silicon wafer with deep reactive ion etching. The photolithography process is developed to build a mask of 15 μm thick resist pattern on silicon wafer. This photo layer acts as a mask for deep reactive ion etching. Wet chemical etching process is developed to etch kapton polyamide film. This etched film is used as a stand off, gap between two electrodes of the electrostatic valve assembly. The criterion is to develop the processed using standard industry tools. Pre post etch effects, such as, surface roughness, etching pattern, critical dimensions on the samples are measured with Veeco profilometer.
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Date Issued: 2007
Identifier: CFE0001828, ucf:47347
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001828

Title: INVESTIGATION OF REACTIVELY SPUTTERED SILICON CARBON BORON NITRIDE (SICBN) THIN FILMS FOR HIGH TEMPERATURE APPLICATIONS.
Creator: Vijayakumar, Arun, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: The increasing demand for efficient energy systems in the last decade has brought about the development of advanced sensor systems that utilize advance detection methods to help in preventive maintenance of these essential systems. These usually are needed in hard to access environments where conditions are extreme and unfit for human interaction. Thin film based sensors deposited directly on the surfaces exposed to harsh environments can serve as ideal means of measuring the temperature of...
Show moreThe increasing demand for efficient energy systems in the last decade has brought about the development of advanced sensor systems that utilize advance detection methods to help in preventive maintenance of these essential systems. These usually are needed in hard to access environments where conditions are extreme and unfit for human interaction. Thin film based sensors deposited directly on the surfaces exposed to harsh environments can serve as ideal means of measuring the temperature of the component during operation. They provide the basic advantage of proximity to the surface and hence accurate measurement of the surface temperature. The low mass size ratio provides the additional advantage of least interference to system operation. The four elements consisting of Si, C, B, and N can be used to form binary, ternary and quaternary compounds like carbides, nitrides, which are chemically and thermally stable with extreme hardness, thermal conductivity and can be doped n- and p-type. Hence these compounds can be potential candidates for high temperature applications. This research is focused on studying sputtering as a candidate to obtain thin SiCBN films. The deposition and characterization of amorphous thin films of silicon boron carbon nitride (SiCBN) is reported. The SiCBN thin films were deposited in a radio frequency (rf) magnetron sputtering system using reactive co-sputtering of silicon carbide (SiC) and boron nitride (BN) targets. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform SiCBN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 900ºC. Electrical and optical characteristics are also investigated with interesting results. Finally a metal semiconductor metal structure based optoelectronic device is demonstrated with excellent performance improvement over standard silicon based devices under higher temperature conditions.
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Date Issued: 2007
Identifier: CFE0001914, ucf:47490
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001914

Title: INVESTIGATION OF HIGH-K GATE DIELECTRICS AND METALS FOR MOSFET DEVICES.
Creator: Seshadri, Sriram, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: Progress in advanced microlithography and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS devices. This thesis gives an in-depth study of threshold voltages of PMOS and NMOS...
Show moreProgress in advanced microlithography and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS devices. This thesis gives an in-depth study of threshold voltages of PMOS and NMOS transistors using various high-k dielectric materials like Tantalum pent oxide (Ta2O5), Hafnium oxide (HfO2), Zirconium oxide (ZrO2) and Aluminum oxide (Al2O3) gate oxides. Higher dielectric constant may lead to high oxide capacitance (Cox), which affects the threshold voltage (VT) of the device. The working potential of MOS devices can be increased by high dielectric gate oxide and work function of gate metal which may also influence the threshold voltage (VT). High dielectric materials have low gate leakage current, high breakdown voltage and are thermally stable on Silicon Substrate (Si). Different kinds of deposition techniques for different gate oxides, gate metals and stability over silicon substrates are analyzed theoretically. The impact of the properties of gate oxides such as oxide thickness, interface trap charges, doping concentration on threshold voltage were simulated, plotted and studied. This study involved comparisons of oxides-oxides, metals-metals, and metals-oxides. Gate metals and alloys with work function of less than 5eV would be suitable candidates for aluminum oxide, hafnium oxide etc. based MOSFETs.
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Date Issued: 2005
Identifier: CFE0000667, ucf:46549
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000667

Title: INTERCONNECTION, INTERFACE AND INSTRUMENTATION FOR MICROMACHINED CHEMICAL SENSORS.
Creator: Palsandram, Naveenkumar, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: In realizing a portable chemical analysis system, adequate partitioning of a reusable component and a disposable is required. For successful implementation of micromachined sensors in an instrument, reliable methods for interconnection and interface are in great demand between these two major parts. This thesis work investigates interconnection methods of micromachined chip devices, a hybrid fluidic interface system, and measurement circuitry for completing instrumentation. The...
Show moreIn realizing a portable chemical analysis system, adequate partitioning of a reusable component and a disposable is required. For successful implementation of micromachined sensors in an instrument, reliable methods for interconnection and interface are in great demand between these two major parts. This thesis work investigates interconnection methods of micromachined chip devices, a hybrid fluidic interface system, and measurement circuitry for completing instrumentation. The interconnection method based on micromachining and injection molding techniques was developed and an interconnecting microfluidic package was designed, fabricated and tested. Alternatively, a plug-in type design for a large amount of sample flow was designed and demonstrated. For the hybrid interface, sequencing of the chemical analysis was examined and accordingly, syringe containers, a peristaltic pump and pinch valves were assembled to compose a reliable meso-scale fluidic control unit. A potentiostat circuit was modeled using a simulation tool. The simulated output showed its usability toward three-electrode electrochemical microsensors. Using separately fabricated microsensors, the final instrument with two different designs--flow-through and plug-in type was tested for chlorine detection in water samples. The chemical concentration of chlorine ions could be determined from linearly dependent current signals from the instrument.
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Date Issued: 2005
Identifier: CFE0000673, ucf:46516
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000673

Title: SUPER HIGH-SPEED MINIATURIZED PERMANENT MAGNET SYNCHRONOUS MOTOR.
Creator: Zheng, Liping, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: This dissertation is concerned with the design of permanent magnet synchronous motors (PMSM) to operate at super-high speed with high efficiency. The designed and fabricated PMSM was successfully tested to run upto 210,000 rpm The designed PMSM has 2000 W shaft output power at 200,000 rpm and at the cryogenic temperature of 77 K. The test results showed the motor to have an efficiency reaching above 92%. This achieved efficiency indicated a significant improvement compared to commercial...
Show moreThis dissertation is concerned with the design of permanent magnet synchronous motors (PMSM) to operate at super-high speed with high efficiency. The designed and fabricated PMSM was successfully tested to run upto 210,000 rpm The designed PMSM has 2000 W shaft output power at 200,000 rpm and at the cryogenic temperature of 77 K. The test results showed the motor to have an efficiency reaching above 92%. This achieved efficiency indicated a significant improvement compared to commercial motors with similar ratings. This dissertation first discusses the basic concept of electrical machines. After that, the modeling of PMSM for dynamic simulation is provided. Particular design strategies have to be adopted for super-high speed applications since motor losses assume a key role in the motor drive performance limit. The considerations of the PMSM structure for cryogenic applications are also discussed. It is shown that slotless structure with multi-strand Litz-wire is favorable for super-high speeds and cryogenic applications. The design, simulation, and test of a single-sided axial flux pancake PMSM is presented. The advantages and disadvantages of this kind of structure are discussed, and further improvements are suggested and some have been verified by experiments. The methodologies of designing super high-speed motors are provided in details. Based on these methodologies, a super high-speed radial-flux PMSM was designed and fabricated. The designed PMSM meets our expectation and the tested results agree with the design specifications. 2-D and 3-D modeling of the complicated PMSM structure for the electromagnetic numerical simulations of motor performance and parameters such as phase inductors, core losses, rotor eddy current loss, torque, and induced electromotive force (back-EMF) are also presented in detail in this dissertation. Some mechanical issues such as thermal analysis, bearing pre-load, rotor stress analysis, and rotor dynamics analysis are also discussed. Different control schemes are presented and suitable control schemes for super high- speed PMSM are also discussed in detail.
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Date Issued: 2005
Identifier: CFE0000762, ucf:46562
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000762

Title: A test of supported characters.
Creator: Stephens, Blake, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: What follows is every charecter from ASCII Value 32 through 255. The entire lower and upper ASCII character set converted to ANSI. !"#$%&'()*+,-./0123456789:;<=>?@ABCDEFGHIJKLMNOPQRSTUVWXYZ[\]^_`abcdefghijklmnopqrstuvwxyz{|}~¦ÇüéâäàåçêëèïîìÄÅÉæÆôöòûùÿÖÜ¢£¥PáíóúñÑªº¿¬¬½¼¡«»¦¦¦¦¦¦¦++¦¦++++++--+-+¦¦++--¦-+----++++++++¦_¦¦¯aßGpSsµtFTOd8fen=±==()÷°··vn²¦
Date Issued: 2011
Identifier: CFE8001337, ucf:52834
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE8001337

Title: INVESTIGATION OF REACTIVELY SPUTTERED BORON CARBON NITRIDE THIN FILMS.
Creator: Todi, Vinit, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For...
Show moreResearch efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B4C, [two]-C3N4. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC2N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with K<3. BCN shows promise as a low dielectric constant material with good mechanical strength suitable to be used in newer CMOS technologies. For optical applications, the deposition of BCN coatings on polymers is a promising method for protecting the polymer surface against wear and scratching. BCN films have high optical transparency and thus can be used as mask substrates for X-ray lithography. Most of the efforts from different researchers were focused to deposit cubic boron nitride and boron carbide films. Several methods of preparing boron carbon nitride films have been reported, such as chemical vapor deposition (CVD), plasma assisted CVD, pulsed laser ablation and ion beam deposition. Very limited studies could be found focusing on the effect of nitrogen incorporation into boron carbide structure by sputtering. In this work, the deposition and characterization of amorphous thin films of boron carbon nitride (BCN) is reported. The BCN thin films were deposited by radio frequency (rf) magnetron sputtering system. The BCN films were deposited by sputtering from a high purity B4C target with the incorporation of nitrogen gas in the sputtering ambient. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform BCN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 700[degrees]C. Electrical and optical characteristics are also investigated with interesting results. The optical band gap of the films ranged from 2.0 eV - 3.1 eV and increased with N2/Ar gas flow ratio except at the highest ratio. The optical band gap showed an increasing trend when annealed at higher temperatures. The effect of deposition temperature on the optical and chemical compositions of the BCN films was also studied. The band gap increased with the deposition temperature and the films deposited at 500oC had the highest band gap. Dielectric constant was calculated from the Capacitance-Voltage curves obtained for the MOS structures with BCN as the insulating material. Aluminum was used as the top electrode and the substrate was p-type Si. Effect of N2/Ar gas flow ratio and annealing on the values of dielectric constant was studied and the dielectric constant of 2.5 was obtained for the annealed BCN films. This by far is the lowest value of dielectric constant reported for BCN film deposited by sputtering. Lastly, the future research work on the BCN films that will be carried out as a part of the dissertation is proposed.
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Date Issued: 2011
Identifier: CFE0004033, ucf:49181
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004033

Title: CHARACTERIZATION OF ALUMINUM DOPED ZINC OXIDE THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS.
Creator: Shantheyanda, Bojanna, Kalpathy, Sundaram, University of Central Florida
Abstract / Description: Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the...
Show moreGrowing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCOÃ‚Â's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film.The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
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Date Issued: 2010
Identifier: CFE0003142, ucf:48623
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003142

Title: End to End Brain Fiber Orientation Estimation Using Deep Learning.
Creator: Puttashamachar, Nandakishore, Bagci, Ulas, Shah, Mubarak, Rahnavard, Nazanin, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: In this work, we explore the various Brain Neuron tracking techniques, one of the most significant applications of Diffusion Tensor Imaging. Tractography is a non-invasive method to analyze underlying tissue micro-structure. Understanding the structure and organization of the tissues facilitates a diagnosis method to identify any aberrations which can occurwithin tissues due to loss of cell functionalities, provides acute information on the occurrences of brain ischemia or stroke, the...
Show moreIn this work, we explore the various Brain Neuron tracking techniques, one of the most significant applications of Diffusion Tensor Imaging. Tractography is a non-invasive method to analyze underlying tissue micro-structure. Understanding the structure and organization of the tissues facilitates a diagnosis method to identify any aberrations which can occurwithin tissues due to loss of cell functionalities, provides acute information on the occurrences of brain ischemia or stroke, the mutation of certain neurological diseases such as Alzheimer, multiple sclerosis and so on. Under all these circumstances, accurate localization of the aberrations in efficient manner can help save a life. Following up with the limitations introduced by the current Tractography techniques such as computational complexity, reconstruction errors during tensor estimation and standardization, we aim to elucidate these limitations through our research findings. We introduce an End to End Deep Learning framework which can accurately estimate the most probable likelihood orientation at each voxel along a neuronal pathway. We use Probabilistic Tractography as our baseline model to obtain the training data and which also serve as a Tractography Gold Standard for our evaluations. Through experiments we show that our Deep Network can do a significant improvement over current Tractography implementations by reducing the run-time complexity to a significant new level. Our architecture also allows for variable sized input DWI signals eliminating the need to worry about memory issues as seen with the traditional techniques. The advantageof this architecture is that it is perfectly desirable to be processed on a cloud setup and utilize the existing multi GPU frameworks to perform whole brain Tractography in minutes rather than hours. The proposed method is a good alternative to the current state of the art orientation estimation technique which we demonstrate across multiple benchmarks.
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Date Issued: 2017
Identifier: CFE0007292, ucf:52156
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007292

Title: Artificial Neuron using MoS2/Graphene Threshold Switching Memristor.
Creator: Kalita, Hirokjyoti, Roy, Tania, Sundaram, Kalpathy, Yuan, Jiann-Shiun, University of Central Florida
Abstract / Description: With the ever-increasing demand for low power electronics, neuromorphic computing has garnered huge interest in recent times. Implementing neuromorphic computing in hardware will be a severe boost for applications involving complex processes such as pattern recognition. Artificial neurons form a critical part in neuromorphic circuits, and have been realized with complex complementary metal(-)oxide(-)semiconductor (CMOS) circuitry in the past. Recently, insulator-to-metal-transition (IMT)...
Show moreWith the ever-increasing demand for low power electronics, neuromorphic computing has garnered huge interest in recent times. Implementing neuromorphic computing in hardware will be a severe boost for applications involving complex processes such as pattern recognition. Artificial neurons form a critical part in neuromorphic circuits, and have been realized with complex complementary metal(-)oxide(-)semiconductor (CMOS) circuitry in the past. Recently, insulator-to-metal-transition (IMT) materials have been used to realize artificial neurons. Although memristors have been implemented to realize synaptic behavior, not much work has been reported regarding the neuronal response achieved with these devices. In this work, we study the IMT in 1T-TaS2 and the volatile threshold switching behavior in vertical-MoS2 (v-MoS2) and graphene van der Waals heterojunction system. The v-MoS2/graphene threshold switching memristor (TSM) is used to produce the integrate-and-fire response of a neuron. We use large area chemical vapor deposited (CVD) graphene and MoS2, enabling large scale realization of these devices. These devices can emulate the most vital properties of a neuron, including the all or nothing spiking, the threshold driven spiking of the action potential, the post-firing refractory period of a neuron and strength modulated frequency response. These results show that the developed artificial neuron can play a crucial role in neuromorphic computing.
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Date Issued: 2018
Identifier: CFE0007203, ucf:52291
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007203

Title: Excellent Surface Passivation for High Efficiency C_Si Solar Cells.
Creator: Bakhshi, Sara, Schoenfeld, Winston, Abdolvand, Reza, Sundaram, Kalpathy, Davis, Kristopher, University of Central Florida
Abstract / Description: Semiconductor surface clean is sometimes perceived as costly but long recognized as pivotal in determining the final semiconductor device performance and yield. In this contribution, we investigated the effectiveness of crystalline silicon surface cleaning by a simple UV-ozone process in comparison to the industry standard RCA clean for silicon photovoltaic applications. We present a unique method of processing the silicon surface effectively by UV-ozone cleaning. Despite being simple, UV...
Show moreSemiconductor surface clean is sometimes perceived as costly but long recognized as pivotal in determining the final semiconductor device performance and yield. In this contribution, we investigated the effectiveness of crystalline silicon surface cleaning by a simple UV-ozone process in comparison to the industry standard RCA clean for silicon photovoltaic applications. We present a unique method of processing the silicon surface effectively by UV-ozone cleaning. Despite being simple, UV-ozone cleaning results in a superior surface passivation quality that is comparable to high-quality RCA clean. When used as a stack dielectric(-)UV-ozone oxide overlaid by aluminum oxide(-)the thickness of UV-ozone oxide plays an important role in determining the passivation quality. Of all treatment times, 15 min of UV-ozone treatment results in an outstanding passivation quality, achieving the effective carrier lifetime of 3 ms and saturation current density of 5 fA/cm2. In addition, we present a simple and effective technique to extract values of electron/hole capture cross-section for the purpose of analyzing the interface passivation quality from already measured surface recombination parameters of saturation current density, interfacial trap density and total fixed charge, instead of measuring on the separately prepared metal-insulated-semiconductor (MIS) samples by the techniques: frequency-dependent parallel conductance or deep-level transient spectroscopy.
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Date Issued: 2018
Identifier: CFE0007154, ucf:52313
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007154

Title: Categorical range reporting in 2D using Wavelet tree.
Creator: Kanthareddy Sumithra, Swathi, Valliyil Thankachan, Sharma, Sundaram, Kalpathy, Jha, Sumit Kumar, University of Central Florida
Abstract / Description: The research involved optimizing the space and bounding the output time by the output size in categorical range reporting of points within the given rectangle query Q in two dimension using wavelet trees and range counting. The time taken to report those points and space to tore n points in set S can be done using wavelet tree and range counting. Consider set S consisting of n points in two-dimension. An orthogonal range reporting query rectangle Q = [a,b] x [c,d] on set S is sent to report...
Show moreThe research involved optimizing the space and bounding the output time by the output size in categorical range reporting of points within the given rectangle query Q in two dimension using wavelet trees and range counting. The time taken to report those points and space to tore n points in set S can be done using wavelet tree and range counting. Consider set S consisting of n points in two-dimension. An orthogonal range reporting query rectangle Q = [a,b] x [c,d] on set S is sent to report the set of points in S which interacts with the query rectangle[Q]. The time taken to report these points is dependent on the output size. The categorical range reporting is an extension of orthogonal range reporting, where each point (xi; yi) in S is associated with a category c[i] belongs to [sigma] and the query is to report the set of distinct categories within the query region [a,b] x [c,d] once. In this paper, we present a new solution for this problem using wavelet trees. The points in S associated with categories are stored in a wavelet tree structure. Wavelet tree structure consists of bit map for these categories. To report the categories in the given rectangle queryQ, rank and select operations on the wavelet tree is applied. It was observed that the space taken by the structure was O(n log sigma) space and query time is O(k log n log sigma). Notice that the new result is more efficient in space when log sigma = O(log n). The study provides a new and efficient way of storing large dataset and also bounds the time complexity by the output size k.
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Date Issued: 2018
Identifier: CFE0007204, ucf:52275
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007204

Title: "Design and Simulation of CMOS RF Active Mixers".
Creator: Gibson, Allen, Yuan, Jiann-Shiun, Wei, Lei, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: This paper introduces a component of the Radio Frequency transceiver called the mixer. The mixer is a critical component in the RF systems, because of its ability for frequency conversion. This passage focuses on the design analysis and simulation of multiple topologies for the active down-conversion mixer. This mixer is characterized by its important design properties which consist of conversion gain, linearity, noise figure, and port isolation. The topologies that are given in this passage...
Show moreThis paper introduces a component of the Radio Frequency transceiver called the mixer. The mixer is a critical component in the RF systems, because of its ability for frequency conversion. This passage focuses on the design analysis and simulation of multiple topologies for the active down-conversion mixer. This mixer is characterized by its important design properties which consist of conversion gain, linearity, noise figure, and port isolation. The topologies that are given in this passage range from the most commonly known mixer design, to implemented design techniques that are used to increase the mixers important design properties as the demand of CMOS technology and the overall RF system rises. All mixer topologies were designed and simulated using TSMC 0.18 (&)#181;m CMOS technology in Advanced Design Systems, a simulator used specifically for RF designs.
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Date Issued: 2011
Identifier: CFE0004112, ucf:49086
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004112

Title: Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices.
Creator: Grummel, Brian, Shen, Zheng, Sundaram, Kalpathy, Yuan, Jiann-Shiun, University of Central Florida
Abstract / Description: Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor...
Show moreAdvances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) die-attach has shown in literature to be a promising bonding technique for this packaging need. In this work TLP has been comprehensively investigated and characterized to assess its viability for high-temperature power electronics applications. The reliability and durability of TLP die-attach was extensively investigated utilizing electrical resistivity measurement as an indicator of material diffusion in gold-indium TLP samples. Criteria of ensuring diffusive stability were also developed. Samples were fabricated by material deposition on glass substrates with variant Au(-)In compositions but identical barrier layers. They were stressed with thermal cycling to simulate their operating conditions then characterized and compared. Excess indium content in the die-attach was shown to have poor reliability due to material diffusion through barrier layers while samples containing suitable indium content proved reliable throughout the thermal cycling process. This was confirmed by electrical resistivity measurement, EDS, FIB, and SEM characterization. Thermal and mechanical characterization of TLP die-attached samples was also performed to gain a newfound understanding of the relationship between TLP design parameters and die-attach properties. Samples with a SiC diode chip TLP bonded to a copper metalized silicon nitride substrate were made using several different values of fabrication parameters such as gold and indium thickness, Au(-)In ratio, and bonding pressure. The TLP bonds were then characterized for die-attach voiding, shear strength, and thermal impedance. It was found that TLP die-attach offers high average shear force strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction to the substrate. The influence of various fabrication parameters on the bond characteristics were also compared, providing information necessary for implementing TLP die-attach into power electronic modules for high-temperature applications. The outcome of the investigation on TLP bonding techniques was incorporated into a new power module design utilizing TLP bonding. A full half-bridge inverter power module for low-power space applications has been designed and analyzed with extensive finite element thermo-mechanical modeling. In summary, TLP die-attach has investigated to confirm its reliability and to understand how to design effective TLP bonds, this information has been used to design a new high-temperature power electronic module.
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Date Issued: 2012
Identifier: CFE0004499, ucf:49276
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004499

Title: Wearable Passive Wireless MEMS Respiration Sensor.
Creator: Moradian, Sina, Abdolvand, Reza, Sundaram, Kalpathy, Kapoor, Vikram, University of Central Florida
Abstract / Description: In this study a passive sensor that wirelessly monitors the profile of the human respiratory system is presented. The sensor was designed to be wearable, weighs less than 10 grams and is durable. The sensor is made of a RF piezoelectric MEMS resonator and an ultra-high frequency antenna made of a thin metal film formed on a flexible substrate . The resonance frequency of the TPoS resonator shifts as a function of condensation and evaporation of water vapor on the surface of the resonator and...
Show moreIn this study a passive sensor that wirelessly monitors the profile of the human respiratory system is presented. The sensor was designed to be wearable, weighs less than 10 grams and is durable. The sensor is made of a RF piezoelectric MEMS resonator and an ultra-high frequency antenna made of a thin metal film formed on a flexible substrate . The resonance frequency of the TPoS resonator shifts as a function of condensation and evaporation of water vapor on the surface of the resonator and changes in resonator's temperature. These parameters change in each in response to inspiration and expiration and a wireless measurement system detects the frequency shift of the sensor and converts it into the respiration profile. The respiration profile of a healthy human subject is measured and presented for a transmitter to sensor to receiver distance of ~25cm.
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Date Issued: 2017
Identifier: CFE0006628, ucf:51279
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006628

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