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- Title
- Injection-Locked Vertical Cavity Surface Emitting Lasers (VCSELs) for Optical Arbitrary Waveform Generation.
- Creator
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Bhooplapur, Sharad, Delfyett, Peter, Li, Guifang, Christodoulides, Demetrios, Malocha, Donald, University of Central Florida
- Abstract / Description
-
Complex optical pulse shapes are typically generated from ultrashort laser pulses by manipulating the optical spectrum of the input pulses. This generates complex but periodic time-domain waveforms. Optical Arbitrary Waveform Generation (OAWG) builds on the techniques of ultrashort pulse?shaping, with the goal of making non?periodic, truly arbitrary optical waveforms. Some applications of OAWG are coherently controlling chemical reactions on a femtosecond time scale, improving the performance...
Show moreComplex optical pulse shapes are typically generated from ultrashort laser pulses by manipulating the optical spectrum of the input pulses. This generates complex but periodic time-domain waveforms. Optical Arbitrary Waveform Generation (OAWG) builds on the techniques of ultrashort pulse?shaping, with the goal of making non?periodic, truly arbitrary optical waveforms. Some applications of OAWG are coherently controlling chemical reactions on a femtosecond time scale, improving the performance of LADAR systems, high?capacity optical telecommunications and ultra wideband signals processing.In this work, an array of Vertical Cavity Surface Emitting Lasers (VCSELs) are used as modulators, by injection-locking each VCSEL to an individual combline from an optical frequency comb source. Injection-locking ensures that the VCSELs' emission is phase coherent with the input combline, and modulating its current modulates mainly the output optical phase. The multi-GHz modulation bandwidth of VCSELs updates the output optical pulse shape on a pulse-to-pulse time scale, which is an important step towards true OAWG. In comparison, it is about a million times faster than the liquid-crystal modulator arrays typically used for pulse shaping! Novel components and subsystems of Optical Arbitrary Waveform Generation (OAWG) are developed and demonstrated in this work. They include:1.Modulators An array of VCSELs is packaged and characterized for use as a modulator for rapid?update pulse?shaping at GHz rates. The amplitude and phase modulation characteristics of an injection?locked VCSEL are simultaneously measured at GHz modulation rates.2.Optical Frequency Comb SourcesAn actively mode?locked semiconductor laser was assembled, with a 12.5 GHz repetition rate, ~ 200 individually resolvable comblines directly out of the laser, and high frequency stability. In addition, optical frequency comb sources are generated by modulation of a single frequency laser.3.High-resolution optical spectral demultiplexersThe demultiplexers are implemented using bulk optics, and are used to spatially resolve individual optical comblines onto the modulator array. 4.Optical waveform measurement techniques Several techniques are used to measure generated waveforms, especially for spectral phase measurements, including multi-heterodyne phase retrieval. In addition, an architecture for discriminating between ultrashort encoded optical pulses with record high sensitivity is demonstrated.
Show less - Date Issued
- 2014
- Identifier
- CFE0005466, ucf:50402
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005466
- Title
- True linearized intensity modulation for photonic analog to digital conversion using an injection-locked mode-locked laser.
- Creator
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Sarailou, Edris, Delfyett, Peter, Likamwa, Patrick, Fathpour, Sasan, Malocha, Donald, University of Central Florida
- Abstract / Description
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A true linearized interferometric intensity modulator for pulsed light has been proposed and experimentally presented in this thesis. This has been achieved by introducing a mode-locked laser into one of the arms of a Mach-Zehnder interferometer and injection-locking it to the input light (which is pulsed and periodic). By modulating the injection-locked laser, and combining its output light with the light from the other arm of interferometer in quadrature, one can achieve true linearized...
Show moreA true linearized interferometric intensity modulator for pulsed light has been proposed and experimentally presented in this thesis. This has been achieved by introducing a mode-locked laser into one of the arms of a Mach-Zehnder interferometer and injection-locking it to the input light (which is pulsed and periodic). By modulating the injection-locked laser, and combining its output light with the light from the other arm of interferometer in quadrature, one can achieve true linearized intensity modulator. This linearity comes from the arcsine phase response of the injection-locked mode-locked laser (as suggested by steady-state solution of Adler's equation) when it is being modulated. Mode-locked lasers are fabricated using a novel AlGaInAs-InP material system. By using the BCB for planarization and minimizing the metal pad size and directly modulating the laser, we have achieved very effective fundamental hybrid mode-locking at the repetition rate of ~ 23 GHz. This laser also provided the short pulses of 860 fs and 280 fs timing jitter integrated from 1 Hz- 100 MHz.The linearized intensity modulator has been built by using two identical two-section mode-locked lasers with the same length, one as the slave laser in one of the arms of the Mach-Zehnder interferometer injection-locked to the other one as the master which is the input light to the modulator. A low V? of 8.5 mV is achieved from this modulator. Also the current of the gain section or the voltage of the saturable absorber section of the slave laser has been used to apply the modulation signal. A spur free dynamic range of 70 dB.Hz2/3 is achieved when modulating the modulator through the saturable absorber. Modulating the saturable absorber provides a reduced third-order intermodulation tone with respect to modulating the gain. This is simply because of the unwanted amplitude modulation created when modulating the gain section current.Finally an improved design is proposed and demonstrated to improve the modulator performance. This is achieved by introducing a third section to the laser. Using the impurity free vacancy disordering technique the photoluminescence peak of this section is blue-shifted selectively and therefore there would not be any absorption in that passive section. By applying the modulation signal to this passive section rather than applying it to the gain section or saturable absorber section, the amplitude and phase modulation could be decoupled. The experimental results have presented here and an almost six-fold reduction in V? and 5 dB improvement in spur free dynamic range have been achieved. The proposed and demonstrated configuration as an analog optical link has the potential to increase the performance and resolution of photonic analog-to-digital converters.
Show less - Date Issued
- 2015
- Identifier
- CFE0005707, ucf:50118
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005707
- Title
- Novel Photonic Resonance Arrangements Using Non-Hermitian Exceptional Points.
- Creator
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Hodaeiesfahani, Seyedhossein, Khajavikhan, Mercedeh, Christodoulides, Demetrios, Likamwa, Patrick, Abdolvand, Reza, University of Central Florida
- Abstract / Description
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In recent years, non-Hermitian degeneracies also known as exceptional points (EPs) have emerged as a new paradigm for engineering the response of optical systems. EPs can appear in a wide class of open non-Hermitian configurations. Among different types of non-conservative photonic systems, parity-time (PT) symmetric arrangements are of particular interest since they provide an excellent platform to explore the physics of exceptional points. In this work, the intriguing properties of...
Show moreIn recent years, non-Hermitian degeneracies also known as exceptional points (EPs) have emerged as a new paradigm for engineering the response of optical systems. EPs can appear in a wide class of open non-Hermitian configurations. Among different types of non-conservative photonic systems, parity-time (PT) symmetric arrangements are of particular interest since they provide an excellent platform to explore the physics of exceptional points. In this work, the intriguing properties of exceptional points are utilized to address two of the long standing challenges in the field of integrated photonics- enforcing single mode lasing in intrinsically multimode cavities and enhancing the sensitivity of micro-resonators.In the first part of this work, I will describe how stable single mode lasing can be readily achieved in longitudinally and transversely multi-moded microring cavities through the systematic utilization of abrupt phase transitions at exceptional points. This technique will be first demonstrated in a parity-time laser that is comprised of a gain cavity coupled to an identical but lossy counterpart. A detailed study of the behavior of this system around the exceptional point will be presented. Furthermore, we report the first experimental realization of a dark state laser in which by strategically designing the spectral locations of exceptional points, widely tunable single-mode lasing can be attained even at high pump levels. Despite the presence of loss in such open laser systems, the slope efficiency remains virtually intact. Our results demonstrate the potential of exceptional points as a versatile design tool for mode management in on-chip laser configurations.In the second part of my dissertation, I will show how the exceptional points and their underlying degeneracies can be used to significantly boost the intrinsic sensitivity of microcavities. I will demonstrate the enhanced sensitivity in a binary PT-symmetric coupled cavity arrangement that is biased at an exceptional point. Then I will report the first observation of higher-order exceptional points in a ternary parity-time symmetric microring laser system with a judiciously tailored gain-loss distribution. The enhanced response associated with this ternary system follows a cubic root dependence on externally introduced perturbation, which can in turn be detected in the spectral domain. Using such arrangements, more than one order of magnitude enhancement in the sensitivity is observed experimentally. These results can pave the way towards improving the performance of current on-chip micro-cavity sensors.
Show less - Date Issued
- 2017
- Identifier
- CFE0006947, ucf:51627
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006947
- Title
- Injection Locking of Semiconductor Mode-Locked Lasers for Long-Term Stability of Widely Tunable Frequency Combs.
- Creator
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Williams, Charles, Delfyett, Peter, Hagan, David, Likamwa, Patrick, Vanstryland, Eric, DeSalvo, Richard, University of Central Florida
- Abstract / Description
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Harmonically mode-locked semiconductor lasers with external ring cavities offer high repetition rate pulse trains while maintaining low optical linewidth via long cavity storage times. Single frequency injection locking generates widely-spaced and tunable frequency combs from these harmonically mode-locked lasers, while stabilizing the optical frequencies. The output is stabilized long-term with the help of a feedback loop utilizing either a novel technique based on Pound-Drever-Hall...
Show moreHarmonically mode-locked semiconductor lasers with external ring cavities offer high repetition rate pulse trains while maintaining low optical linewidth via long cavity storage times. Single frequency injection locking generates widely-spaced and tunable frequency combs from these harmonically mode-locked lasers, while stabilizing the optical frequencies. The output is stabilized long-term with the help of a feedback loop utilizing either a novel technique based on Pound-Drever-Hall stabilization or by polarization spectroscopy. Error signals of both techniques are simulated and compared to experimentally obtained signals. Frequency combs spaced by 2.5 GHz and ~10 GHz are generated, with demonstrated optical sidemode suppression of unwanted modes of 36 dB, as well as RF supermode noise suppression of 14 dB for longer than 1 hour. In addition to the injection locking of actively harmonically mode-locked lasers, the injection locking technique for regeneratively mode-locked lasers, or Coupled Opto-Electronic Oscillators (COEOs), is also demonstrated and characterized extensively.
Show less - Date Issued
- 2013
- Identifier
- CFE0004774, ucf:49805
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004774
- Title
- ALL-SEMICONDUCTOR HIGH POWER MODE-LOCKED LASER SYSTEM.
- Creator
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Kim, Kyungbum, Delfyett, Peter, University of Central Florida
- Abstract / Description
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The objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the...
Show moreThe objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the concept of X-CPA are addressed. Based on theoretical and experimental study, an all-semiconductor mode-locked X-CPA system consisting of a mode-locked master oscillator, an optical pulse pre-stretcher, a semiconductor optical amplifier (SOA) pulse picker, an extreme pulse stretcher/compressor, cascaded optical amplifiers, and a bulk grating compressor is successfully demonstrated and generates >kW record peak power. A potential candidate for generating high average power from an X-CPA system, novel grating coupled surface emitting semiconductor laser (GCSEL) devices, are studied experimentally. The first demonstration of mode-locking with GCSELs and associated amplification characteristics of grating coupled surface emitting SOAs will be presented. In an effort to go beyond the record setting results of the X-CPA system, a passive optical cavity amplification technique in conjunction with the X-CPA system is constructed, and studied experimentally and theoretically.
Show less - Date Issued
- 2006
- Identifier
- CFE0001069, ucf:46767
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001069
- Title
- ULTRASHORT, HIGH POWER, AND ULTRALOW NOISE MODE-LOCKED OPTICAL PULSE GENERATION USING QUANTUM-DOT SEMICONDUCTOR LASERS.
- Creator
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Choi, Myoung-Taek, Delfyett, Peter, University of Central Florida
- Abstract / Description
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This dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section...
Show moreThis dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section devices. Short pulse generation from an external cavity mode-locked QD two-section diode laser is studied. High quality, sub-picosecond (960 fs), high peak power (1.2 W) pulse trains are obtained. The sign and magnitude of pulse chirp were measured for the first time. The role of the self-phase modulation and the linewidth enhancement factor in QD mode-locked lasers is addressed. The noise performance of two-section mode-locked lasers and a SOA-based ring laser was investigated. Significant reduction of the timing jitter under hybrid mode-locked operation was achieved owing to more than one order of magnitude reduction of the linewidth in QD gain media. Ultralow phase noise performance (integrated timing jitter of a few fs at a 10 GHz repetition rate) was demonstrated from an actively mode-locked unidirectional ring laser. These results show that quantum dot mode-locked lasers are strong competitors to conventional semiconductor lasers in noise performance. Finally we demonstrated an opto-electronic oscillator (OEO) and coupled opto-electronic oscillators (COEO) which have the potential for both high purity microwave and low noise optical pulse generation. The phase noise of the COEO is measured by the photonic delay line frequency discriminator method. Based on this study we discuss the prospects of the COEO as a low noise optical pulse source.
Show less - Date Issued
- 2006
- Identifier
- CFE0001410, ucf:47068
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001410
- Title
- Non-Hermitian Optics.
- Creator
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Ulhassan, Absar, Christodoulides, Demetrios, Khajavikhan, Mercedeh, Likamwa, Patrick, Kaup, David, University of Central Florida
- Abstract / Description
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From the viewpoint of quantum mechanics, a system must always be Hermitian since all its corresponding eigenvalues must be real. In contrast, the eigenvalues of open systems-unrestrained because of either decay or amplification-can be in general complex. Not so long ago, a certain class of non-Hermitian Hamiltonians was discovered that could have a completely real eigenvalue spectrum. This special class of Hamiltonians was found to respect the property of commutation with the parity-time (PT)...
Show moreFrom the viewpoint of quantum mechanics, a system must always be Hermitian since all its corresponding eigenvalues must be real. In contrast, the eigenvalues of open systems-unrestrained because of either decay or amplification-can be in general complex. Not so long ago, a certain class of non-Hermitian Hamiltonians was discovered that could have a completely real eigenvalue spectrum. This special class of Hamiltonians was found to respect the property of commutation with the parity-time (PT) operator. Translated into optics, this implies a balance between regions exhibiting gain and loss. Traditionally, loss has been perceived as a foe in optics and something that needs to be avoided at all costs. As we will show, when used in conjunction with gain, the presence of loss can lead to a host of counterintuitive outcomes in such non-Hermitian configurations that would have been otherwise unattainable in standard arrangements. We will study PT symmetric phase transitions in various optical settings that include semiconductor microrings and coupled fiber cavities, and show how they can allow mode-selectivity in lasers. One of the key outcomes of this effort was the realization of higher order degeneracies in a three-cavity laser configuration that can exhibit orders-of-magnitude larger sensitivity to external perturbations. We will also consider systems that display nonlinear effects such as gain saturation, thus allowing novel phase transitions. Some interesting properties associated with degeneracies in non-Hermitian settings will be investigated as well. Such degeneracies, called exceptional points (EPs), are much more drastic compared to standard degeneracies of eigenvalues because the corresponding eigenvectors also coalesce, which in turn reduces the dimensionality of the phase space. We will show that dynamic parameter contours enclosing or close to EPs can lead to a robust chiral mode conversion process (-) something that can be potentially used to realize omni-polarizing optical devices.
Show less - Date Issued
- 2018
- Identifier
- CFE0007259, ucf:52182
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007259
- Title
- Injection-locked semiconductor lasers for realization of novel RF photonics components.
- Creator
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Hoghooghi, Nazanin, Delfyett, Peter, Likamwa, Patrick, Li, Guifang, Malocha, Donald, University of Central Florida
- Abstract / Description
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This dissertation details the work has been done on a novel resonant cavity linear interferometric modulator and a direct phase detector with channel filtering capability using injection-locked semiconductor lasers for applications in RF photonics. First, examples of optical systems whose performance can be greatly enhanced by using a linear intensity modulator are presented and existing linearized modulator designs are reviewed. The novel linear interferometric optical intensity modulator...
Show moreThis dissertation details the work has been done on a novel resonant cavity linear interferometric modulator and a direct phase detector with channel filtering capability using injection-locked semiconductor lasers for applications in RF photonics. First, examples of optical systems whose performance can be greatly enhanced by using a linear intensity modulator are presented and existing linearized modulator designs are reviewed. The novel linear interferometric optical intensity modulator based on an injection-locked laser as an arcsine phase modulator is introduced and followed by numerical simulations of the phase and amplitude response of an injection-locked semiconductor laser. The numerical model is then extended to study the effects of the injection ratio, nonlinear cavity response, depth of phase and amplitude modulation on the spur-free dynamic range of a semiconductor resonant cavity linear modulator. Experimental results of the performance of the linear modulator implemented with a multi-mode Fabry-Perot semiconductor laser as the resonant cavity are shown and compared with the theoretical model. The modulator performance using a vertical cavity surface emitting laser as the resonant cavity is investigated as well. Very low V? in the order of 1 mV, multi-gigahertz bandwidth (-10 dB bandwidth of 5 GHz) and a spur-free dynamic range of 120 dB.Hz2/3 were measured directly after the modulator. The performance of the modulator in an analog link is experimentally investigated and the results show no degradation of the modulator linearity after a 1 km of SMF.The focus of the work then shifts to applications of an injection-locked semiconductor laser as a direct phase detector and channel filter. This phase detection technique does not require a local oscillator. Experimental results showing the detection and channel filtering capability of an injection-locked semiconductor diode laser in a three channel system are shown. The detected electrical signal has a signal-to-noise ratio better than 60 dB/Hz. In chapter 4, the phase noise added by an injection-locked vertical cavity surface emitting laser is studied using a self-heterodyne technique. The results show the dependency of the added phase noise on the injection ratio and detuning frequency. The final chapter outlines the future works on the linear interferometric intensity modulator including integration of the modulator on a semiconductor chip and the design of the modulator for input pulsed light.
Show less - Date Issued
- 2012
- Identifier
- CFE0004385, ucf:49368
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004385
- Title
- monolithically Integrated Broadly Tunable Light Emitters based on Selectively Intermixed Quantum Wells.
- Creator
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Zakariya, Abdullah, Likamwa, Patrick, Li, Guifang, Wahid, Parveen, Schoenfeld, Winston, University of Central Florida
- Abstract / Description
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A monolithically integrated broadly tunable MQW laser that utilizes a combined impurity-free vacancy disordering (IFVD) of quantum wells and optical beam steering techniques is proposed and investigated experimentally. The device consists of a beam-steering section and an optical amplifier section fabricated on a GaAs/AlGaAs quantum well (QW) p-i-n heterostructure. The beam steering section forms a reconfigurable optical waveguide that can be moved laterally by applying separately controlled...
Show moreA monolithically integrated broadly tunable MQW laser that utilizes a combined impurity-free vacancy disordering (IFVD) of quantum wells and optical beam steering techniques is proposed and investigated experimentally. The device consists of a beam-steering section and an optical amplifier section fabricated on a GaAs/AlGaAs quantum well (QW) p-i-n heterostructure. The beam steering section forms a reconfigurable optical waveguide that can be moved laterally by applying separately controlled electrical currents to two parallel contact stripes. The active core of the gain section is divided in into selectively intermixed regions. The selective intermixing of the QW in the gain section results in neighboring regions with different optical bandgaps. The wavelength tuning is accomplished by steering the amplified optical beam through the selected region where it experiences a peak in the gain spectrum determined by the degree of intermixing of the QW. The laser wavelength tunes to the peak in the gain spectrum of that region. The IFVD technique relies on a silica (SiO2) capped rapid thermal annealing and it has been found that the degree of intermixing of the QW with the barrier material is dependent on the thickness of the SiO2 film. The QW sample is first encapsulated with a 400nm thick SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD). In the gain section, the SiO2 film is selectively etched using multiple photolithographic and reactive ion etching steps whereas the SiO2 film is left intact in all the remaining areas including the beam-steering section. The selective area quantum well intermixing is then induced by a single rapid thermal annealing step at 975(&)deg;C for a 20s duration to realize a structure with quantum well that has different bandgaps in the key regions. Optical characterizations of the intermixed regions have shown a blue shift of peak of the electroluminescence emission of 5nm, 16nm and 33nm for the uncapped, 100nm and 200nm respectively when compared to the as grown sample. The integrated laser exhibited a wavelength tuning range of 17nm (799nm to 816nm). Based on the same principle of QW selective intermixing, we have also designed and fabricated a monolithically integrated multi-wavelength light emitting diode (LED). The LED emits multiple wavelength optical beams from one compact easy to fabricate QW structure. Each wavelength has an independent optical power control, allowing the LED to emit one or more wavelengths at once. The material for the LED is the same AlGaAs/GaAs QW p-i-n heterostructure described above. The device is divided into selectively intermixed regions on a single QW structure using IFVD technique to create localized intermixed regions. Two different designs have been implemented to realize either an LED with multiple output beams of different wavelengths or an LED with a single output beam that has dual wavelength operation capabilities. Experimental results of the multiple output beams LED have demonstrated electrically controlled optical emission of 800nm, 789nm and 772nm. The single output LED has experimentally been shown to produce wavelength emission of 800nm and/or 772nm depending on electrical activation of the two aligned intermixed regions.
Show less - Date Issued
- 2013
- Identifier
- CFE0005284, ucf:50560
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0005284
- Title
- HIGH-SPEED MODELOCKED SEMICONDUCTOR LASERS AND APPLICATIONS IN COHERENT PHOTONIC SYSTEMS.
- Creator
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Lee, Wangkuen, Delfyett, Peter, University of Central Florida
- Abstract / Description
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1.55-µm high-speed modelocked semiconductor lasers are theoretically and experimentally studied for various coherent photonic system applications. The modelocked semiconductor lasers (MSLs) are designed with high-speed (>5 GHz) external cavity configurations utilizing monolithic two-section curved semiconductor optical amplifiers. By exploiting the saturable absorber section of the monolithic device, passive or hybrid mode-locking techniques are used to generate short optical pulses with...
Show more1.55-µm high-speed modelocked semiconductor lasers are theoretically and experimentally studied for various coherent photonic system applications. The modelocked semiconductor lasers (MSLs) are designed with high-speed (>5 GHz) external cavity configurations utilizing monolithic two-section curved semiconductor optical amplifiers. By exploiting the saturable absorber section of the monolithic device, passive or hybrid mode-locking techniques are used to generate short optical pulses with broadband optical frequency combs. Laser frequency stability is improved by applying the Pound-Drever-Hall (PDH) frequency stabilization technique to the MSLs. The improved laser performance after the frequency stabilization (a frequency drifting of less than 350 MHz), is extensively studied with respect to the laser linewidth (~ 3 MHz), the relative intensity noise (RIN) (< -150 dB/Hz), as well as the modal RIN (~ 3 dB reduction). MSL to MSL, and tunable laser to MSL synchronization is demonstrated by using a dual-mode injection technique and a modulation sideband injection technique, respectively. Dynamic locking behavior and locking bandwidth are experimentally and theoretically studied. Stable laser synchronization between two MSLs is demonstrated with an injection seed power on the order of a few microwatt. Several coherent heterodyne detections based on the synchronized MSL systems are demonstrated for applications in microwave photonic links and ultra-dense wavelength division multiplexing (UD-WDM) system. In addition, efficient coherent homodyne balanced receivers based on synchronized MSLs are developed and demonstrated for a spectrally phase-encoded optical CDMA (SPE-OCDMA) system.
Show less - Date Issued
- 2007
- Identifier
- CFE0001703, ucf:47326
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001703
- Title
- LONG CAVITY QUANTUM DOT LASER DIODE AND MONOLITHIC PASSIVELY MODE-LOCKED OPERATION.
- Creator
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Shavitranuruk, K, Deppe, Dennis, University of Central Florida
- Abstract / Description
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Advantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented. The dissertation describes the development and the unique characteristics...
Show moreAdvantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented. The dissertation describes the development and the unique characteristics of single QD active layer laser with long cavity. The data are presented on single layer QD laser diodes that reach threshold current densities values of 11.7 A/cm2 in a p-up mounted 2 cm long cavity and as low as 10 A/cm2, with CW output power of 2 W in a p-down mounted 1.6 cm long cavity. The 8.8 A/cm2 in a p-down mounted 2 cm long cavity is reported. To our knowledge the value 8.8 A/cm2 is the lowest threshold current density ever reported for a room temperature laser diode. These single layer QD laser diodes reach an internal loss of ~0.25 cm-1, which is also the lowest ever reported for a room temperature laser diode. These unique characteristics of single layer QD and laser diode size are potentially promising for the monolithic mode-locked laser because of relatively high peak power with a low repetition rate that is on the order of a few GHz, which can be the novel device for external clocking in the optical interconnect applications. In this dissertation, the stable optical pulse train in a 40 µm wide stripe with a repetition rate of 3.75 GHz with 1.1 cm cavity length through the passive mode-locked onto the monolithic two-section device fabricated from this single layer QD laser is observed.
Show less - Date Issued
- 2010
- Identifier
- CFE0003145, ucf:48646
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003145
- Title
- MONTE CARLO SIMULATION OF HOLE TRANSPORT AND TERAHERTZ AMPLIFICATION IN MULTILAYER DELTA DOPED SEMICONDUCTOR STRUCTURES.
- Creator
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Dolguikh, Maxim, Peale, Robert, University of Central Florida
- Abstract / Description
-
Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers...
Show moreMonte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or in-plane hole transport in the presence of a perpendicular in-plane magnetic field. Inversion population on intersubband transitions arises due to light hole accumulation in E B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions. The same device structure is considered in GaAs. The case of Si is much more complicated due to strong anisotropy of the valence band. The primary new result for Si is the first consideration of the anisotropy of optical phonon scattering for hot holes.
Show less - Date Issued
- 2005
- Identifier
- CFE0000863, ucf:46672
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0000863
