Current Search: Thin film (x)
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Title
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EFFECT OF COMPOSITION, MORPHOLOGY AND SEMICONDUCTING PROPERTIES ON THE EFFICIENCY OF CUIN1-XGAXSE2-YSY THIN-FILM SOLAR CELLS PREPARED BY RAPID THERMAL PROCESSING.
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Creator
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Kulkarni, Sachin, Dhere, Neelkanth, University of Central Florida
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Abstract / Description
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A rapid thermal processing (RTP) reactor for the preparation of graded CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been designed, assembled and is being used at the Photovoltaic Materials Laboratory of the Florida Solar Energy Center. CIGSeS films having the optimum composition, morphology, and semiconducting properties were prepared using RTP. Initially films having various Cu/(In+Ga) ratios were prepared. In the next step selenium incorporation in these films was optimized,...
Show moreA rapid thermal processing (RTP) reactor for the preparation of graded CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been designed, assembled and is being used at the Photovoltaic Materials Laboratory of the Florida Solar Energy Center. CIGSeS films having the optimum composition, morphology, and semiconducting properties were prepared using RTP. Initially films having various Cu/(In+Ga) ratios were prepared. In the next step selenium incorporation in these films was optimized, followed by sulfur incorporation in the surface to increase the bandgap at the surface. The compositional gradient of sulfur was fine-tuned so as to increase the conversion efficiency. Materials properties of these films were characterized by optical microscopy, SEM, AFM, EDS, XRD, GIXRD, AES, and EPMA. The completed cells were extensively studied by electrical characterization. Current-voltage (I-V), external and internal quantum efficiency (EQE and IQE), capacitance-voltage (C-V), and light beam induced current (LBIC) analysis were carried out. Current Density (J)-Voltage (V) curves were obtained at different temperatures. The temperature dependence of the open circuit voltage and fill factor has been estimated. The bandgap value calculated from the intercept of the linear extrapolation was ~1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of ~4.0 x 1015 cm-3. Semiconductor properties analysis of CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been carried out. The values of various PV parameters determined using this analysis were as follows: shunt resistance (Rp) of ~510 Ohms-cm2 under illumination and ~1300 Ohms-cm2 in dark, series resistance (Rs) of ~0.8 Ohms-cm2 under illumination and ~1.7 Ohms-cm2 in dark, diode quality factor (A) of 1.87, and reverse saturation current density (Jo) of 1.5 x 10-7A cm-2. The efficiency of 12.78% obtained during this research is the highest efficiency obtained by any University or National Lab for copper chalcopyrite solar cells prepared by RTP. CIGS2 cells have a better match to the solar spectrum due to their comparatively higher band-gap as compared to CIGS cells. However, they are presently limited to efficiencies below 13% which is considerably lower than that of CIGS cells of 19.9%. One of the reasons for this lower efficiency is the conduction band offset between the CIGS2 absorber layer and the CdS heterojunction partner layer. The band offset value between CIGS2 and CdS was estimated by a combination of ultraviolet photoelectron spectroscopy (UPS) and Inverse Photoemission Spectroscopy (IPES) to be -0.45 eV, i.e. a cliff is present between these two layers, enhancing the recombination at the junction, this limits the efficiency of CIGS2 wide-gap chalcopyrite solar cells.
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Date Issued
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2008
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Identifier
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CFE0002467, ucf:47728
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0002467
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Title
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N MULTILAYER THIN FILM REACTIONS TO FORM L10 FEPT AND EXCHANGE SPRING MAGNETS.
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Creator
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Yao, Bo, Coffey, Kevin, University of Central Florida
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Abstract / Description
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FePt films with the L10 phase have potential applications for magnetic recording and permanent magnets due to its high magnetocrystalline anisotropy energy density. Heat treatment of n multilayer films is one approach to form the L10 FePt phase through a solid state reaction. This thesis has studied the diffusion and reaction of n multilayer films to form the L10 FePt phase and has used this understanding to construct exchange spring magnets. The process-structure-property relations of n...
Show moreFePt films with the L10 phase have potential applications for magnetic recording and permanent magnets due to its high magnetocrystalline anisotropy energy density. Heat treatment of n multilayer films is one approach to form the L10 FePt phase through a solid state reaction. This thesis has studied the diffusion and reaction of n multilayer films to form the L10 FePt phase and has used this understanding to construct exchange spring magnets. The process-structure-property relations of n multilayer films were systematically examined. The transmission electron microscopy (TEM) study of the annealed multilayers indicates that the Pt layer grows at the expense of Fe during annealing, forming a disordered fcc FePt phase by the interdiffusion of Fe into Pt. This thickening of the fcc Pt layer can be attributed to the higher solubilities of Fe into fcc Pt, as compared to the converse. For the range of film thickness studied, a continuous L10 FePt product layer that then thickens with further annealing is not found. Instead, the initial L10 FePt grains are distributed mainly on the grain boundaries within the fcc FePt layer and at the Fe/Pt interfaces and further transformation of the sample to the ordered L10 FePt phase proceeds coupled with the growth of the initial L10 FePt grains. A comprehensive study of annealed n films is provided concerning the phase fraction, grain size, nucleation/grain density, interdiffusivity, long-range order parameter, and texture, as well as magnetic properties. A method based on hollow cone dark field TEM is introduced to measure the volume fraction, grain size, and density of ordered L10 FePt phase grains in the annealed films, and low-angle X-ray diffraction is used to measure the effective Fe-Pt interdiffusivity. The process-structure-properties relations of two groups of samples with varying substrate temperature and periodicity are reported. The results demonstrate that the processing parameters (substrate temperature, periodicity) have a strong influence on the structure (effective interdiffusivity, L10 phase volume fraction, grain size, and density) and magnetic properties. The correlation of these parameters suggests that the annealed n multilayer films have limited nuclei, and the subsequent growth of L10 phase is very important to the extent of ordered phase formed. A correlation between the grain size of fcc FePt phase, grain size of the L10 FePt phase, the L10 FePt phase fraction, and magnetic properties strongly suggests that the phase transformation of fccL10 is highly dependent on the grain size of the parent fcc FePt phase. A selective phase growth model is proposed to explain the phenomena observed. An investigation of the influence of total film thickness on the phase formation of the L10 FePt phase in n multilayer films and a comparison of this to that of FePt co-deposited alloy films is also conducted. A general trend of greater L10 phase formation in thicker films was observed in both types of films. It was further found that the thickness dependence of the structure and of the magnetic properties in n multilayer films is much stronger than that in FePt alloy films. This is related to the greater chemical energy contained in n films than FePt alloy films, which is helpful for the L10 FePt phase growth. However, the initial nucleation temperature of n multilayers and co-deposited alloy films was found to be similar. An investigation of L10 FePt-based exchange spring magnets is presented based on our understanding of the L10 formation in n multilayer films. It is known that exchange coupling is an interfacial magnetic interaction and it was experimentally shown that this interaction is limited to within several nanometers of the interface. A higher degree of order of the hard phase is shown to increase the length scale slightly. Two approaches can be used to construct the magnets. For samples with composition close to stoichiometric L10 FePt, the achievement of higher energy product is limited by the average saturation magnetization, and therefore, a lower annealing temperature is beneficial to increase the energy product, allowing a larger fraction of disordered phase. For samples with higher Fe concentration, the (BH)max is limited by the low coercivity of annealed sample, and a higher annealing temperature is beneficial to increase the energy product.
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Date Issued
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2008
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Identifier
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CFE0002416, ucf:47749
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0002416
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Title
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MAGNETIC PROPERTIES OF SPUTTER DEPOSITED FE-BASED AMORPHOUS THIN FILMS FOR RESONATOR APPLICATION.
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Creator
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China, Chaitali, Coffey, Kevin, University of Central Florida
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Abstract / Description
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In this study we investigate the magnetic properties of Fe-based amorphous thin films. Fe1-x-y-zBxSiyCz, Fe80-xNixB20, Fe80-xMnxB20, and Fe73-xMnxB27 films were deposited on silicon and glass substrates in a DC and RF magnetron sputtering system. Inductive magnetic measurements were performed to investigate the magnetic properties, including induced anisotropy and magnetostriction, of the as-deposited and annealed films using an M-H Looper. The chemical composition of the films was...
Show moreIn this study we investigate the magnetic properties of Fe-based amorphous thin films. Fe1-x-y-zBxSiyCz, Fe80-xNixB20, Fe80-xMnxB20, and Fe73-xMnxB27 films were deposited on silicon and glass substrates in a DC and RF magnetron sputtering system. Inductive magnetic measurements were performed to investigate the magnetic properties, including induced anisotropy and magnetostriction, of the as-deposited and annealed films using an M-H Looper. The chemical composition of the films was characterized using secondary ion mass spectroscopy (SIMS). The physical thickness of the films was determined by use of a stylus profilometer. The M-H Looper studies indicated that the induced anisotropy (Hk) depends strongly on the nickel concentration as well as on the annealing conditions, specifically the time and temperature of the annealing process. For the same metalloid concentration, the induced anisotropy has a maximum as a function of Ni. For the same nickel concentration and annealing time, it was found that the value of Hk decreases with the increase in annealing temperature. For each composition studied, low temperature long time annealing showed a higher value of Hk compared to high temperature short time annealing. From the magnetostriction values of Fe80-xNixB20 alloys, it was found that the sputter deposited films show similar trend but differ in magnitude when compared with ribbon samples. The magnetostriction of annealed thin films is found to be representative of ribbon samples. A potential composition modification to improve the strength of the field induced anisotropy is the addition of low levels of Mn.
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Date Issued
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2006
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Identifier
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CFE0001275, ucf:46896
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0001275
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Title
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CHARACTERIZATION OF MICROSTRUCTURAL AND CHEMICAL FEATURES IN CU-IN-GA-SE-S-BASED THIN-FILM SOLAR CELLS.
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Creator
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Halbe, Ankush, Heinrich, Helge, University of Central Florida
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Abstract / Description
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Thin-film solar cells are potentially low-cost devices to convert sunlight into electricity. Improvements in the conversion efficiencies of these cells reduce material utilization cost and make it commercially viable. Solar cells from the Thin-Film Physics Group, ETH Zurich, Switzerland and the Florida Solar Energy Center (FSEC), UCF were characterized for defects and other microstructural features within the thin-film structure and at the interfaces using transmission electron microscopy ...
Show moreThin-film solar cells are potentially low-cost devices to convert sunlight into electricity. Improvements in the conversion efficiencies of these cells reduce material utilization cost and make it commercially viable. Solar cells from the Thin-Film Physics Group, ETH Zurich, Switzerland and the Florida Solar Energy Center (FSEC), UCF were characterized for defects and other microstructural features within the thin-film structure and at the interfaces using transmission electron microscopy (TEM). The present thesis aims to provide a feedback to these groups on their deposition processes to understand the correlations between processing, resulting microstructures, and the conversion efficiencies of these devices. Also, an optical equipment measuring photocurrents from a solar cell was developed for the identification of defect-prone regions of a thin-film solar cell. The focused ion beam (FIB) technique was used to prepare TEM samples. Bright-field TEM along with scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) including elemental distribution line scans and maps were extensively used for characterizing the absorber layer and interfaces both above and below the absorber layer. Energy-filtered transmission electron microscopy (EFTEM) was applied in cases where EDS results were inconclusive due to the overlap of X-ray energies of certain elements, especially molybdenum and sulfur. Samples from ETH Zurich were characterized for changes in the CIGS (Cu(In,Ga)Se2) microstructure due to sodium incorporation from soda-lime glass or from a post-deposition treatment with NaF as a function of CIGS deposition temperature. The CIGS-CdS interface becomes smoother and the small columnar CIGS grains close to the Mo back contact disappear with increasing CIGS deposition temperature. At 773 K the two sodium incorporation routes result in large differences in the microstructures with a significantly larger grain size for the samples after post-deposition Na incorporation. Porosity was observed in the absorber layer close to the back contact in the samples from FSEC. The reason for porosity could be materials evaporation in the gallium beam of the FIB or a processing effect. The porosity certainly indicates heterogeneities of the composition of the absorber layer near the back contact. A Mo-Se rich layer (possibly MoSe2) was formed at the interface between CIGS/CIGSS and Mo improving the quality of the junction. Other chemical heterogeneities include un-sulfurized Cu-Ga deposits, residual Se from the selenization/ sulfurization chamber in CIGS2 and the formation of Cu-rich regions which are attributed to decomposition effects in the Ga beam of the FIB. Wavy absorber surfaces were observed for some of the cells with occasional discontinuities in the metal grids. The 50 nm thick CdS layer, however, remained continuous in all the samples under investigation. For a sample with a transparent back contact, a 10 nm Mo layer was deposited on ITO (indium tin oxide) before deposition of the CIGS2 (Cu(In,Ga)S2) layer. EFTEM maps indicate that a MoS2 layer does not form for such a Mo/MoS2-ITO back contact. Instead, absorber layer material diffuses through the thin Mo layer onto the ITO forming two layers of CIGS2 on either side of Mo with different compositions. Furthermore, an optical beam induced current (OBIC) system with micron level resolution was successfully developed and preliminary photocurrent maps were acquired to microscopically identify regions within a thin-film solar cell with undesirable microstructural features. Such a system, when fully operational, will provide the means for the identification of special regions from where samples for TEM analysis can be obtained using the FIB technique to study specifically the defects responsible for local variations in solar cell properties.
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Date Issued
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2006
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Identifier
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CFE0001022, ucf:46807
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0001022
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Title
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CLASSICAL SIZE EFFECT IN CU THIN FILMS: IMPACT OF SURFACE AND GRAIN BOUNDARY SCATTERING ON RESISTIVITY.
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Creator
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Sun, Tik, Coffey, Kevin, University of Central Florida
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Abstract / Description
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Surface and grain boundary electron scattering contribute significantly to resistivity as the dimensions of polycrystalline metallic conductors are reduced to, and below, the electron mean free path. A quantitative measurement of the relative contributions of surface and grain boundary scattering to resistivity is very challenging, requiring not only the preparation of suitably small conductors having independent variation of the two relevant length scales, namely, the sample critical...
Show moreSurface and grain boundary electron scattering contribute significantly to resistivity as the dimensions of polycrystalline metallic conductors are reduced to, and below, the electron mean free path. A quantitative measurement of the relative contributions of surface and grain boundary scattering to resistivity is very challenging, requiring not only the preparation of suitably small conductors having independent variation of the two relevant length scales, namely, the sample critical dimension and the grain size, but also independent experimental quantification of these two length scales. In most work to date the sample grain size has been either assumed equal to conductor dimension or measured for only a small number of grains. Thus, the quantification of the classical size effect still suffers from an uncertainty in the relative contributions of surface and grain boundary scattering. In this work, a quantitative analysis of both surface and grain boundary scattering in Cu thin films with independent variation of film thickness (27 nm to 158 nm) and grain size (35 nm to 425 nm) in samples prepared by sub-ambient temperature film deposition followed by annealing is reported. Film resistivities of carefully characterized samples were measured at both room temperature and at 4.2 K and were compared with several scattering models that include the effects of surface and grain boundary scattering. Grain boundary scattering is found to provide the strongest contribution to the resistivity increase. However, a weaker, but significant, role is also observed for surface scattering. Several of the published models for grain boundary and surface scattering are explored and the Matthiessen's rule combination of the Mayadas and Shatzkes' model of grain boundary scattering and Fuchs and Sondheimer's model of surface scattering resistivity contributions is found to be most appropriate. It is found that the experimental data are best described by a grain boundary reflection coefficient of 0.43 and a surface specularity coefficient of 0.52. This analysis finds a significantly lower contribution from surface scattering than has been reported in previous works, which is in part due to the careful quantitative microstructural characterization of samples performed. The data does suggest that there is a roughness dependence to the surface scattering, but this was not conclusively demonstrated. Voids and impurities were found to have negligible impact on the measured resistivities of the carefully prepared films.
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Date Issued
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2009
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Identifier
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CFE0002959, ucf:47949
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0002959
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Title
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Surface Acoustic Wave (SAW) Cryogenic Liquid and Hydrogen Gas Sensors.
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Creator
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Fisher, Brian, Malocha, Donald, Gong, Xun, Likamwa, Patrick, Richie, Samuel, Youngquist, Robert, University of Central Florida
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Abstract / Description
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This research was born from NASA Kennedy Space Center's (KSC) need for passive, wireless and individually distinguishable cryogenic liquid and H2 gas sensors in various facilities. The risks of catastrophic accidents, associated with the storage and use of cryogenic fluids may be minimized by constant monitoring. Accidents involving the release of H2 gas or LH2 were responsible for 81% of total accidents in the aerospace industry. These problems may be mitigated by the implementation of a...
Show moreThis research was born from NASA Kennedy Space Center's (KSC) need for passive, wireless and individually distinguishable cryogenic liquid and H2 gas sensors in various facilities. The risks of catastrophic accidents, associated with the storage and use of cryogenic fluids may be minimized by constant monitoring. Accidents involving the release of H2 gas or LH2 were responsible for 81% of total accidents in the aerospace industry. These problems may be mitigated by the implementation of a passive (or low-power), wireless, gas detection system, which continuously monitors multiple nodes and reports temperature and H2 gas presence. Passive, wireless, cryogenic liquid level and hydrogen (H2) gas sensors were developed on a platform technology called Orthogonal Frequency Coded (OFC) surface acoustic wave (SAW) radio frequency identification (RFID) tag sensors. The OFC-SAW was shown to be mechanically resistant to failure due to thermal shock from repeated cycles between room to liquid nitrogen temperature. This suggests that these tags are ideal for integration into cryogenic Dewar environments for the purposes of cryogenic liquid level detection. Three OFC-SAW H2 gas sensors were simultaneously wirelessly interrogated while being exposed to various flow rates of H2 gas. Rapid H2 detection was achieved for flow rates as low as 1ccm of a 2% H2, 98% N2 mixture. A novel method and theory to extract the electrical and mechanical properties of a semiconducting and high conductivity thin-film using SAW amplitude and velocity dispersion measurements were also developed. The SAW device was shown to be a useful tool in analysis and characterization of ultrathin and thin films and physical phenomena such as gas adsorption and desorption mechanisms.?
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Date Issued
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2012
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Identifier
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CFE0004536, ucf:49258
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0004536
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Title
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INVESTIGATION OF REACTIVELY SPUTTERED BORON CARBON NITRIDE THIN FILMS.
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Creator
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Todi, Vinit, Sundaram, Kalpathy, University of Central Florida
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Abstract / Description
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Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For...
Show moreResearch efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B4C, [two]-C3N4. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC2N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with K<3. BCN shows promise as a low dielectric constant material with good mechanical strength suitable to be used in newer CMOS technologies. For optical applications, the deposition of BCN coatings on polymers is a promising method for protecting the polymer surface against wear and scratching. BCN films have high optical transparency and thus can be used as mask substrates for X-ray lithography. Most of the efforts from different researchers were focused to deposit cubic boron nitride and boron carbide films. Several methods of preparing boron carbon nitride films have been reported, such as chemical vapor deposition (CVD), plasma assisted CVD, pulsed laser ablation and ion beam deposition. Very limited studies could be found focusing on the effect of nitrogen incorporation into boron carbide structure by sputtering. In this work, the deposition and characterization of amorphous thin films of boron carbon nitride (BCN) is reported. The BCN thin films were deposited by radio frequency (rf) magnetron sputtering system. The BCN films were deposited by sputtering from a high purity B4C target with the incorporation of nitrogen gas in the sputtering ambient. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform BCN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 700[degrees]C. Electrical and optical characteristics are also investigated with interesting results. The optical band gap of the films ranged from 2.0 eV - 3.1 eV and increased with N2/Ar gas flow ratio except at the highest ratio. The optical band gap showed an increasing trend when annealed at higher temperatures. The effect of deposition temperature on the optical and chemical compositions of the BCN films was also studied. The band gap increased with the deposition temperature and the films deposited at 500oC had the highest band gap. Dielectric constant was calculated from the Capacitance-Voltage curves obtained for the MOS structures with BCN as the insulating material. Aluminum was used as the top electrode and the substrate was p-type Si. Effect of N2/Ar gas flow ratio and annealing on the values of dielectric constant was studied and the dielectric constant of 2.5 was obtained for the annealed BCN films. This by far is the lowest value of dielectric constant reported for BCN film deposited by sputtering. Lastly, the future research work on the BCN films that will be carried out as a part of the dissertation is proposed.
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Date Issued
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2011
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Identifier
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CFE0004033, ucf:49181
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0004033
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Title
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EPITAXIAL GROWTH, CHARACTERIZATION AND APPLICATION OF NOVEL WIDE BANDGAP OXIDE SEMICONDUCTORS.
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Creator
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Mares, Jeremy, Schoenfeld, Winston, University of Central Florida
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Abstract / Description
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In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning...
Show moreIn this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited - and possibly even juxtaposed - to realize novel wide band gap optoelectronic technologies. The results of the research conducted presented herein overwhelmingly support this hypothesis in that they confirm the possibility to grow these films with sufficient quality by this technique, as conjectured. NixMg1-xO films with varying Nickel concentrations ranging from x = 0 to x = 1 have been grown on lattice matched MgO substrates (lattice mismatch ε < 0.01) and characterized structurally, morphologically, optically and electrically. Similarly, cubic ZnxMg1-xO films with Zinc concentrations ranging from x = 0 to x ≈ 0.53, as limited by phase segregation, have also been grown and characterized. Photoconductive devices have been designed and fabricated from these films and characterized. Successfully engineered films in both categories exhibit the desired deep ultraviolet photoresponse and therefore verify the hypothesis. While the culminating work of interest here focuses on the two compounds discussed above, the investigation has also involved the characterization or exploitation of related films including hexagonal phase ZnxMg1-xO, ZnO, CdxZn1-xO and hybrid structures based on these compounds used in conjunction with GaN. These works were critical precursors to the growth of cubic oxides, however, and are closely relevant. Viewed in its entirety, this document can therefore be considered a multifaceted interrogation of several novel oxide compounds and structures, both cubic and wurtzite in structure. The conclusions of the research can be stated succinctly as a quantifiably successful effort to validate the use of these compounds and structures for wide bandgap optoelectronic technologies.
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Date Issued
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2010
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Identifier
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CFE0003125, ucf:48625
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0003125
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Title
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CHARACTERIZATION OF ALUMINUM DOPED ZINC OXIDE THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS.
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Creator
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Shantheyanda, Bojanna, Kalpathy, Sundaram, University of Central Florida
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Abstract / Description
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Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the...
Show moreGrowing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCOÃÂ's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film.The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
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Date Issued
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2010
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Identifier
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CFE0003142, ucf:48623
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0003142
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Title
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Characteristics of Hydrogel-Wetted Thin Films.
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Creator
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Owens, James, Putnam, Shawn, Chow, Louis, Xu, Yunjun, University of Central Florida
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Abstract / Description
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The meniscus region of a thin film is known to have high heat transfer properties due to high evaporation rates and activation of latent heat. The region known as the thin film meniscus (?_film(
Show moreThe meniscus region of a thin film is known to have high heat transfer properties due to high evaporation rates and activation of latent heat. The region known as the thin film meniscus (?_film(<)2 (&)#181;m ) can account for more than half of the total heat transfer of a droplet or film. This study focuses on the potential elongation and curvature amplification of the thin film meniscus region by the implementation of a layer of high hydrogen bonding (hydrogel) film on which the liquid meniscus is built. Forced wetting via liquid propagation though this hydrogel layer in the radial direction increases the surface area of the film. By analyzing the mass flux of liquid lost through evaporation and using both spectroscopic and optical methods to obtain the curvature of the film, relationships between hydrogel thickness and the resulting mass flux were made. Isothermal and steady state assumptions were used to relate hydrogel thickness layers to meniscus curvature, evaporative mass flux, and overall heat transfer coefficients. The experimental results demonstrate, that steady state conditions are achievable with small percentage change in film profile over time. These results are promising toward the addition of the hydrogel coatings and further advancements in heat piping and high heat flux cooling systems for micro electronic devices.
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Date Issued
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2017
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Identifier
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CFE0006634, ucf:51257
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0006634
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Title
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Performance optimization of lateral-mode thin-film piezoelectric-on-substrate resonant systems.
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Creator
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Fatemi, Hedy, Abdolvand, Reza, Sundaram, Kalpathy, Malocha, Donald, Gong, Xun, Cho, Hyoung Jin, University of Central Florida
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Abstract / Description
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The main focus of this dissertation is to characterize and improve the performance of thin-film piezoelectric-on-substrate (TPoS) lateral-mode resonators and filters. TPoS is a class of piezoelectric MEMS devices which benefits from the high coupling coefficient of the piezoelectric transduction mechanism while taking advantage of superior acoustic properties of a substrate. The use of lateral-mode TPoS designs allows for fabrication of dispersed-frequency filters on a single substrate, thus...
Show moreThe main focus of this dissertation is to characterize and improve the performance of thin-film piezoelectric-on-substrate (TPoS) lateral-mode resonators and filters. TPoS is a class of piezoelectric MEMS devices which benefits from the high coupling coefficient of the piezoelectric transduction mechanism while taking advantage of superior acoustic properties of a substrate. The use of lateral-mode TPoS designs allows for fabrication of dispersed-frequency filters on a single substrate, thus significantly reducing the size and manufacturing cost of devices. TPoS filters also offer a lower temperature coefficient of frequency, and better power handling capability compared to rival technologies all in a very small footprint.Design and fabrication process of the TPoS devices is discussed. Both silicon and diamond substrates are utilized for fabrication of TPoS devices and results are compared. Specifically, the superior acoustic properties of nanocrystalline diamond in scaling the frequency and energy density of the resonators is highlighted in comparison with silicon. The performance of TPoS devices in a variety of applications is reported. These applications include lateral-mode TPoS filters with record low IL values (as low as 2dB) and fractional bandwidth up to 1%, impedance transformers, very low phase noise oscillators, and passive wireless temperature sensors.
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Date Issued
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2015
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Identifier
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CFE0005945, ucf:50805
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0005945
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Title
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Light Trapping in Thin Film Crystalline Silicon Solar Cells.
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Creator
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Boroumand Azad, Javaneh, Chanda, Debashis, Peale, Robert, Del Barco, Enrique, Flitsiyan, Elena, Schoenfeld, Winston, University of Central Florida
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Abstract / Description
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This dissertation presents numerical and experimental studies of a unified light trapping approach that is extremely important for all practical solar cells. A 2D hexagonal Bravais lattice diffractive pattern is studied in conjunction with the verification of the reflection mechanisms of single and double layer anti-reflective coatings in the broad range of wavelength 400 nm - 1100 nm. By varying thickness and conformity, we obtained the optimal parameters which minimize the broadband...
Show moreThis dissertation presents numerical and experimental studies of a unified light trapping approach that is extremely important for all practical solar cells. A 2D hexagonal Bravais lattice diffractive pattern is studied in conjunction with the verification of the reflection mechanisms of single and double layer anti-reflective coatings in the broad range of wavelength 400 nm - 1100 nm. By varying thickness and conformity, we obtained the optimal parameters which minimize the broadband reflection from the nanostructured crystalline silicon surface over a wide range of angle 0(&)deg;-65(&)deg;. While the analytical design of broadband, angle independent anti-reflection coatings on nanostructured surfaces remains a scientific challenge, numerical optimization proves a viable alternative, paving the path towards practical implementation of the light trapping solar cells. A 3 (&)#181;m thick light trapping solar cell is modeled in order to predict and maximize combined electron-photon harvesting in ultrathin crystalline silicon solar cells. It is shown that the higher charge carrier generation and collection in this design compensates the absorption and recombination losses and ultimately results in an increase in energy conversion efficiency. Further, 20 (&)#181;m and 100 (&)#181;m thick functional solar cells with the light trapping scheme are studied. The efficiency improvement is observed numerically and experimentally due to photon absorption enhancement in the light trapping cells with respect to a bare cell of same thickness.
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Date Issued
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2017
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Identifier
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CFE0006936, ucf:51654
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0006936
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Title
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Non-Oxide Porous Ceramics from Polymer Precursor.
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Creator
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Yang, Xueping, An, Linan, Fang, Jiyu, Zhai, Lei, Huo, Qun, Wu, Shintson, University of Central Florida
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Abstract / Description
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Non-oxide porous ceramics exhibit many unique and superior properties, such as better high-temperature stability, improved chemical inertness/corrosive resistance, as well as wide band-gap semiconducting behavior, which lead to numerous potential applications in catalysis, high temperature electronic and photonic devices, and micro-electromechanical systems. Currently, most mesoporous non-oxide ceramics (e.g. SiC) are formed by two-step templating methods, which are hard to adjust the pore...
Show moreNon-oxide porous ceramics exhibit many unique and superior properties, such as better high-temperature stability, improved chemical inertness/corrosive resistance, as well as wide band-gap semiconducting behavior, which lead to numerous potential applications in catalysis, high temperature electronic and photonic devices, and micro-electromechanical systems. Currently, most mesoporous non-oxide ceramics (e.g. SiC) are formed by two-step templating methods, which are hard to adjust the pore sizes, and require a harmful etching step or a high temperature treatment to remove the templates.In this dissertation, we report a novel technique for synthesizing hierarchically mesoporous non-oxide SiC ceramic from a block copolymer precursor. The copolymer precursors with vairing block length were synthesized by reversible addition fragmentation chain transfer polymerization. The block copolymers self-assemble into nano-scaled micelles with a core-shell structure in toluene. With different operation processes, hollow SiC nanospheres and bulk mesoporous SiC ceramics were synthesized after the subsequent pyrolysis of precorsur micelles. The resultant SiC ceramics have potential applications in catalysis, solar cells, separation, and puri?cation processes.The polymer synthesis and pyrolysis process will investigated by NMR, FTIR, GPC, TEM, and TGA/DSC. The morphology and structure of synthesised SiC hollow spheres and mesoporous ceramics were analyzed by SEM, TGA/DSC and BET/BJH analysis.Besides forming core shell micelles in selective solvent Toluene, we found that PVSZ-b-PS could also exhibit this property in the air water interface. By inducing the Langmuir-Blodgett deposition, a precursor monolayer with homogeously distributed povinylsilazane particles deposited on silicon wafer synthesized by spreading the diblock copolymer PVSZ-b-PS in the air water interface. After the pyrolysis process, orderly arranging SiC nano particles formed from the polymer precursor monolayer doped on the surface of silicon wafer, which shows great potential as an optoelectronic material. The deposition process and the relationship between compress pressure and monolayer morphology were studies, and the structure of monolayer and SiC dots were investigated by AFM, SEM.
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Date Issued
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2014
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Identifier
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CFE0005564, ucf:50274
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0005564
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Title
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THEORETICAL TAILORING OF PERFORATED THIN SILVER FILMS FOR AFFINITY SURFACE PLASMON RESONANCE BIOSENSOR APPLICATIONS.
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Creator
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Gongora Jr., Renan, Zou, Shengli, University of Central Florida
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Abstract / Description
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Metallic films, in conjunction with biochemical-targeted probes, are expected to provide early diagnosis, targeted therapy and non-invasive monitoring for epidemiology applications. The resonance wavelength peaks, both plasmonic and Wood-Rayleigh Anomalies (WRAs), in the scattering spectra are affected by the metallic architecture. As of today, much research has been devoted to extinction efficiency in the plasmonic region. However, Wood Rayleigh Anomalies (WRAs) typically occur at...
Show moreMetallic films, in conjunction with biochemical-targeted probes, are expected to provide early diagnosis, targeted therapy and non-invasive monitoring for epidemiology applications. The resonance wavelength peaks, both plasmonic and Wood-Rayleigh Anomalies (WRAs), in the scattering spectra are affected by the metallic architecture. As of today, much research has been devoted to extinction efficiency in the plasmonic region. However, Wood Rayleigh Anomalies (WRAs) typically occur at wavelengths associated with the periodic distance of the structures. A significant number of papers have already focused on the plasmonic region of the visible spectrum, but a less explored area of research was presented here; the desired resonance wavelength region was 400-500nm, corresponding to the WRA for the silver film with perforated hole with a periodic distance of 400nm. Simulations obtained from the discrete dipole approximation (DDA) method, show sharp spectral bands (either high or low scattering efficiencies) in both wavelength regions of the visible spectrum simulated from Ag film with cylindrical hole arrays In addition, surprising results were obtained in the parallel scattering spectra,where the electric field is contained in the XY plane, when the angle between the metallic surface and the incident light was adjusted to 14 degrees; a bathochromic shift was observed for the WRA peak suggesting a hybrid resonance mode. Metallic films have the potential to be used in instrumental techniques for use as sensors, i.e. surface plasmon resonance affinity biosensors, but are not limited to such instrumental techniques. Although the research here was aimed towards affinity biosensors, other sensory designs can benefit from the optimized Ag film motifs. The intent of the study was to elucidate metal film motifs, when incorporated into instrumental analysis, allowing the quantification of genetic material in the visible region. Any research group that routinely benefits from quantification of various analytes in solution matrices will also benefit from this study, as there are a bewildering number of instrumental sensory methods and setups available.
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Date Issued
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2014
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Identifier
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CFH0004538, ucf:45155
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Format
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Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFH0004538
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Title
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PROBING AND TUNING THE SIZE, MORPHOLOGY, CHEMISTRY AND STRUCTURE OF NANOSCALE CERIUM OXIDE.
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Creator
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Kuchibhatla, Satyanarayana, Seal, Sudipta, University of Central Florida
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Abstract / Description
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Cerium oxide (ceria)-based materials in the nanoscale regime are of significant fundamental and technological interest. Nanoceria in pure and doped forms has current and potential use in solid oxide fuel cells, catalysis, UV- screening, chemical mechanical planarization, oxygen sensors, and bio-medical applications. The characteristic feature of Ce to switch between the +3 and + 4 oxidation states renders oxygen buffering capability to ceria. The ease of this transformation was expected to be...
Show moreCerium oxide (ceria)-based materials in the nanoscale regime are of significant fundamental and technological interest. Nanoceria in pure and doped forms has current and potential use in solid oxide fuel cells, catalysis, UV- screening, chemical mechanical planarization, oxygen sensors, and bio-medical applications. The characteristic feature of Ce to switch between the +3 and + 4 oxidation states renders oxygen buffering capability to ceria. The ease of this transformation was expected to be enhanced in the nanoceria. In most the practical scenarios, it is necessary to have a stable suspension of ceria nanoparticles (CNPs) over longer periods of time. However, the existing literature is confined to short term studies pertaining to synthesis and property evaluation. Having understood the need for a comprehensive understanding of the CNP suspensions, this dissertation is primarily aimed at understanding the behavior of CNPs in various chemical and physical environments. We have synthesized CNPs in the absence of any surfactants at room temperature and studied the aging characteristics. After gaining some understanding about the behavior of this functional oxide, the synthesis environment and aging temperature were varied, and their affects were carefully analyzed using various materials analysis techniques such as high resolution transmission electron microscopy (HRTEM), UV-Visible spectroscopy (UV-Vis), and X-ray photoelectron spectroscopy (XPS). When the CNPs were aged at room temperature in as-synthesized condition, they were observed to spontaneously assemble and evolve as fractal superoctahedral structures. The reasons for this unique polycrystalline morphology were attributed to the symmetry driven assembly of the individual truncated octahedral and octahedral seed of the ceria. HRTEM and Fast Fourier Transform (FFT) analyses were used to explain the agglomeration behavior and evolution of the octahedral morphology. Some of the observations were supported by molecular dynamic simulations. Poly (ethylene glycol) (PEG) and ethylene glycol (EG) were used to control the kinetics of this morphology evolution. The ability to control the agglomeration of CNPs in these media stems from the lower dielectric constant and an increased viscosity of the EG and PEG based solvents. CNPs when synthesized and aged in frozen conditions, i.e. in ice, were found to form one dimensional, high aspect ratio structures. A careful analysis has provided some evidence that the CNPs use the porous channels in ice as a template and undergo oriented attachment to form nanorods. When the aging treatment was done near freezing temperature in solution, the nanorods were not observed, confirming the role of channels in ice. When synthesized in aqueous media such as DI water, PEG and EG; CNPs were observed to exhibit a reversible oxidation state switching between +3 and +4. Band gap values were computed from the optical absorption data. The changes in the band gap values observed were attributed to the changes in the oxidation state of CNPs as opposed to the quantum confinement effects, as expected in other nanoparticle systems. The work presented in this dissertation demonstrates, with evidence, that in order to obtain a comprehensive understanding of the properties of nanoscale materials it is of paramount importance to monitor their behavior over relatively longer periods of time under various ambient environments. While the solution based techniques offer a versatility and low cost route to study the fundamental properties of nanomaterials, they suffer some inherent problems such as precursor contamination and uncontrolled chemical reactions. Especially when analyzing the behavior of ceria-based materials for applications like solid oxide fuel cells, a great control in the density and crystalline quality are desired. In order to achieve this, as a first step pure ceria thin films were synthesized using oxygen plasma assisted molecular beam epitaxy (OPA-MBE). The ceria films were analyzed using various in situ and ex situ techniques to study the crystal structure, growth mode and epitaxial quality of the films. It was observed that the epitaxial orientation of the ceria films could be tuned by varying the deposition rate. When the films were grown at low deposition rate (< 8 Å/min) ceria films with epitaxial (200) orientation were observed where as the films grown at high deposition rates (up to 30 Å/min) showed (111) orientation. Theoretical simulations were used to confirm some of the experimental facts observed in both nanoparticles and thin films.
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Date Issued
-
2008
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Identifier
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CFE0002163, ucf:47499
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Format
-
Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0002163
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Title
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A Linear Multiplexed Electrospray Thin Film Deposition System.
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Creator
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Lojewski, Brandon, Deng, Weiwei, Chen, Ruey-Hung, Chen, Quanfang, University of Central Florida
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Abstract / Description
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Liquid spray is essential to industries requiring processes such as spray coating, spray drying, spray pyrolysis, or spray cooling. This thesis reports the design, fabrication, and characterization of a thin film deposition system which utilizes a linear multiplexed electrospray (LINES) atomizer. First, a thorough review of the advantages and limitations of prior multiplexed electrospray systems leads to discussion of the design rationale for this work. Next, the line of charge model was...
Show moreLiquid spray is essential to industries requiring processes such as spray coating, spray drying, spray pyrolysis, or spray cooling. This thesis reports the design, fabrication, and characterization of a thin film deposition system which utilizes a linear multiplexed electrospray (LINES) atomizer. First, a thorough review of the advantages and limitations of prior multiplexed electrospray systems leads to discussion of the design rationale for this work. Next, the line of charge model was extended to prescribe the operating conditions for the experiments and to estimate the spray profile. The spray profile was then simulated using a Lagrangian model and solved using a desktop supercomputer based on Graphics Processing Units (GPUs). The simulation was extended to estimate the droplet number density flux during deposition. Pure ethanol was electrosprayed in the cone-jet mode from a 51-nozzle aluminum LINES atomizer with less than 3% relative standard deviation in the D10 average droplet diameter as characterized using Phase Doppler Interferometry (PDI). Finally a 25-nozzle LINES was integrated into a thin film deposition system with a heated, motion controlled stage, to deposit TiO2 thin films onto silicon wafers from an ethanol based nanoparticle suspension. The resulting deposition pattern was analyzed using SEM, optical profilometry, and macro photography and compared with the numerical simulation results. The LINES tool developed here is a step forward to enabling the power of electrospray for industrial manufacturing applications in clean energy, health care, and electronics.
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Date Issued
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2013
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Identifier
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CFE0005106, ucf:50745
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Format
-
Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0005106
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Title
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Investigation on electrical properties of RF sputtered deposited BCN thin films.
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Creator
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Prakash, Adithya, Sundaram, Kalpathy, Yuan, Jiann-Shiun, Lin, Mingjie, University of Central Florida
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Abstract / Description
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The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated...
Show moreThe ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance.Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B(&)#172;4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.
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Date Issued
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2013
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Identifier
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CFE0004912, ucf:49625
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Format
-
Document (PDF)
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PURL
-
http://purl.flvc.org/ucf/fd/CFE0004912
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Title
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Theoretical Studies of Nanostructure Formation and Transport on Surfaces.
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Creator
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Aminpour, Maral, Rahman, Talat, Stolbov, Sergey, Roldan Cuenya, Beatriz, Blair, Richard, University of Central Florida
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Abstract / Description
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This dissertation undertakes theoretical and computational research to characterize and understand in detail atomic configurations and electronic structural properties of surfaces and interfaces at the nano-scale, with particular emphasis on identifying the factors that control atomic-scale diffusion and transport properties. The overarching goal is to outline, with examples, a predictive modeling procedure of stable structures of novel materials that, on the one hand, facilitates a better...
Show moreThis dissertation undertakes theoretical and computational research to characterize and understand in detail atomic configurations and electronic structural properties of surfaces and interfaces at the nano-scale, with particular emphasis on identifying the factors that control atomic-scale diffusion and transport properties. The overarching goal is to outline, with examples, a predictive modeling procedure of stable structures of novel materials that, on the one hand, facilitates a better understanding of experimental results, and on the other hand, provide guidelines for future experimental work. The results of this dissertation are useful in future miniaturization of electronic devices, predicting and engineering functional novel nanostructures. A variety of theoretical and computational tools with different degrees of accuracy is used to study problems in different time and length scales. Interactions between the atoms are derived using both ab-initio methods based on Density Functional Theory (DFT), as well as semi-empirical approaches such as those embodied in the Embedded Atom Method (EAM), depending on the scale of the problem at hand. The energetics for a variety of surface phenomena (adsorption, desorption, diffusion, and reactions) are calculated using either DFT or EAM, as feasible. For simulating dynamic processes such as diffusion of ad-atoms on surfaces with dislocations the Molecular Dynamics (MD) method is applied. To calculate vibrational mode frequencies, the infinitesimal displacement method is employed. The combination of non-equilibrium Green's function (NEGF) and DFT is used to calculate electronic transport properties of molecular devices as well as interfaces and junctions.
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Date Issued
-
2013
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Identifier
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CFE0005298, ucf:50504
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Format
-
Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0005298
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Title
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SPECTRAL SIGNATURE MODIFICATION BY APPLICATION OF INFRARED FREQUENCY-SELECTIVE SURFACES.
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Creator
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Monacelli, Brian, Boreman, Glenn, University of Central Florida
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Abstract / Description
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It is desirable to modify the spectral signature of a surface, particularly in the infrared (IR) region of the electromagnetic spectrum. To alter the surface signature in the IR, two methods are investigated: thin film application and antenna array application. The former approach is a common and straightforward incorporation of optically-thin film coatings on the surface designated for signature modification. The latter technique requires the complex design of a periodic array of passive...
Show moreIt is desirable to modify the spectral signature of a surface, particularly in the infrared (IR) region of the electromagnetic spectrum. To alter the surface signature in the IR, two methods are investigated: thin film application and antenna array application. The former approach is a common and straightforward incorporation of optically-thin film coatings on the surface designated for signature modification. The latter technique requires the complex design of a periodic array of passive microantenna elements to cover the surface in order to modify its signature. This technology is known as frequency selective surface (FSS) technology and is established in the millimeter-wave spectral regime, but is a challenging technology to scale for IR application. Incorporation of thin films and FSS antenna elements on a surface permits the signature of a surface to be changed in a deterministic manner. In the seminal application of this work, both technologies are integrated to comprise a circuit-analog absorbing IR FSS. The design and modeling of surface treatments are accomplished using commercially-available electromagnetic simulation software. Fabrication of microstructured antenna arrays is accomplished via microlithographic technology, particularly using an industrial direct-write electron-beam lithography system. Comprehensive measurement methods are utilized to study the patterned surfaces, including infrared spectral radiometry and Fourier-transform infrared spectrometry. These systems allow for direct and complementary spectral signature measurements--the radiometer measures the absorption or emission of the surface, and the spectrometer measures its transmission and reflection. For the circuit-analog absorbing square-loop IR FSS, the spectral modulation in emission is measured to be greater than 85% at resonance. Other desirable modifications of surface signature are also explored; these include the ability to filter radiation based on its polarization orientation and the ability to dynamically tune the surface signature. An array of spiral FSS elements allows for circular polarization conditioning. Three techniques for tuning the IR FSS signature via voltage application are explored, including the incorporation of a pn junction substrate, a piezoelectric substrate and a liquid crystal superstrate. These studies will ignite future explorations of IR FSS technology, enabling various unique applications.
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Date Issued
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2005
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Identifier
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CFE0000589, ucf:46471
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Format
-
Document (PDF)
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PURL
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http://purl.flvc.org/ucf/fd/CFE0000589
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Title
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Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies.
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Creator
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Liu, Wen, Liou, Juin, Yuan, Jiann-Shiun, Sundaram, Kalpathy, Shen, Zheng, Chen, Quanfang, University of Central Florida
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Abstract / Description
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Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and...
Show moreElectrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this research is to develop novel, effective and robust ESD protection solutions for both emerging technologies and modern complementary metal(-)oxide(-)semiconductor (CMOS) technologies.The Si nanowire field-effect transistors are projected by the International Technology Roadmap for Semiconductors as promising next-generation CMOS devices due to their superior DC and RF performances, as well as ease of fabrication in existing Silicon processing. Aiming at proposing ESD protection solutions for nanowire based circuits, the dimension parameters, fabrication process, and layout dependency of such devices under Human Body Mode (HBM) ESD stresses are studied experimentally in company with failure analysis revealing the failure mechanism induced by ESD. The findings, including design methodologies, failure mechanism, and technology comparisons should provide practical knowhow of the development of ESD protection schemes for the nanowire based integrated circuits. Organic thin-film transistors (OTFTs) are the basic elements for the emerging flexible, printable, large-area, and low-cost organic electronic circuits. Although there are plentiful studies focusing on the DC stress induced reliability degradation, the operation mechanism of OTFTs subject to ESD is not yet available in the literature and are urgently needed before the organic technology can be pushed into consumer market. In this work, the ESD operation mechanism of OTFT depending on gate biasing condition and dimension parameters are investigated by extensive characterization and thorough evaluation. The device degradation evolution and failure mechanism under ESD are also investigated by specially designed experiments. In addition to the exploration of ESD protection solutions in emerging technologies, efforts have also been placed in the design and analysis of a major ESD protection device, diode-triggered-silicon-controlled-rectifier (DTSCR), in modern CMOS technology (90nm bulk). On the one hand, a new type DTSCR having bi-directional conduction capability, optimized design window, high HBM robustness and low parasitic capacitance are developed utilizing the combination of a bi-directional silicon-controlled-rectifier and bi-directional diode strings. On the other hand, the HBM and Charged Device Mode (CDM) ESD robustness of DTSCRs using four typical layout topologies are compared and analyzed in terms of trigger voltage, holding voltage, failure current density, turn-on time, and overshoot voltage. The advantages and drawbacks of each layout are summarized and those offering the best overall performance are suggested at the end.
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Date Issued
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2012
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Identifier
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CFE0004571, ucf:49199
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Format
-
Document (PDF)
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PURL
-
http://purl.flvc.org/ucf/fd/CFE0004571
Pages