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Title: Intermodulation Analysis of Class C Transistorized Amplifiers with Applications for V.H.F. Amplifiers.
Creator: Wollam, Robert H., McCarter, Ed. R., Engineering
Abstract / Description: Florida Technological University College of Engineering Thesis; The paper discusses the theoretical analysis and the experimental work done to describe the cause of intermodulation distortion in class C transistorized amplifiers. A mathematical basis for the intermodulation was derived using a single frequency input and a second frequency introduced into the output of the amplifier. It was followed by experimental work performed to justify the theory. These experiments used both pulsed and...
Show moreFlorida Technological University College of Engineering Thesis; The paper discusses the theoretical analysis and the experimental work done to describe the cause of intermodulation distortion in class C transistorized amplifiers. A mathematical basis for the intermodulation was derived using a single frequency input and a second frequency introduced into the output of the amplifier. It was followed by experimental work performed to justify the theory. These experiments used both pulsed and sinusoidal drives as amplifier inputs. Also, a feedback method along with the transistor's operating poing was shown to reduce the intermodulation distortion produced by the amplifer. Finally, a short discussion on the results and some of the applications of this research to V.H.F. amplifiers was presented.
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Date Issued: 1974
Identifier: CFR0004780, ucf:52963
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFR0004780

Title: FOUR TERMINAL JUNCTION FIELD-EFFECT TRANSISTOR MODEL FOR COMPUTER-AIDED DESIGN.
Creator: Ding, Hao, Liou, Juin J., University of Central Florida
Abstract / Description: A compact model for four-terminal (independent top and bottom gates) junction field-effect transistor (JFET) is presented in this dissertation. The model describes the steady-state characteristics with a unified equation for all bias conditions that provides a high degree of accuracy and continuity of conductance, which are important for predictive analog circuit simulations. It also includes capacitance and leakage equations. A special capacitance drop-off phenomenon at the pinch-off region...
Show moreA compact model for four-terminal (independent top and bottom gates) junction field-effect transistor (JFET) is presented in this dissertation. The model describes the steady-state characteristics with a unified equation for all bias conditions that provides a high degree of accuracy and continuity of conductance, which are important for predictive analog circuit simulations. It also includes capacitance and leakage equations. A special capacitance drop-off phenomenon at the pinch-off region is studies and modeled. The operations of the junction fieldeffect transistor (JFET) with an oxide top-gate and full oxide isolation are analyzed, and a semi-physical compact model is developed. The effects of the different modes associated with the oxide top-gate on the JFET steady-state characteristics of the transistor are discussed, and a single expression applicable for the description of the JFET dc characteristics for all operation modes is derived. The model has been implemented in Verilog-A and simulated in Cadence framework for comparison to experimental data measured at Texas Instruments.
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Date Issued: 2007
Identifier: CFE0001553, ucf:47144
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001553

Title: Parallel fabrication and transport properties of carbon nanotube single electron transistors.
Creator: Islam, Muhammad, Khondaker, Saiful, Chow, Lee, Stolbov, Sergey, Zhai, Lei, University of Central Florida
Abstract / Description: Single electron transistors (SET) have attracted significant attention as a potential building block for post CMOS nanoelectronic devices. However, lack of reproducible and parallel fabrication approach and room temperature operation are the two major bottlenecks for practical realization of SET based devices. In this thesis, I demonstrate large scale single electron transistors fabrication techniques using solution processed single wall carbon nanotubes (SWNTs) and studied their electron...
Show moreSingle electron transistors (SET) have attracted significant attention as a potential building block for post CMOS nanoelectronic devices. However, lack of reproducible and parallel fabrication approach and room temperature operation are the two major bottlenecks for practical realization of SET based devices. In this thesis, I demonstrate large scale single electron transistors fabrication techniques using solution processed single wall carbon nanotubes (SWNTs) and studied their electron transport properties. The approach is based on the assembly of individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit and formation of tunnel barriers on SWNT. Two different techniques: i) metal-SWNT Schottky contact, and ii) mechanical templating of SWNTs were used for tunnel barrier creation.Low temperature (4.2K) transport measurement of 100 nm long metal-SWNT Schottky contact devices show that 93% of the devices with contact resistance (RT) (>) 100 K? show SET behavior. Majority (90%) of the devices with 100 K? (<) RT (<) 1 M?, show periodic, well-de?ned Coulomb diamonds with a charging energy ~ 15 meV, represents single electron tunnelling through a single quantum dot (QD), defined by the top contact. For high RT ((>) 1M?), devices show multiple QDs behaviors, while QD was not formed for low RT ((<) 100 K?) devices. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving an yield of 76%. I also demonstrate room temperature operating SET by using mechanical template technique. In mechanical template method individual SWNT is placed on top of a Al/Al2O3 local gate which bends the SWNT at the edge and tunnel barriers are created. SET devices fabricated with a template width of ~20 nm shows room temperature operation with a charging energy of ~150 meV. I also discussed the detailed transport spectroscopy of the devices.
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Date Issued: 2015
Identifier: CFE0006037, ucf:50987
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006037

Title: HOT CARRIER EFFECT ON LDMOS TRANSISTORS.
Creator: Jiang, Liangjun, Yuan, Jiann S., University of Central Florida
Abstract / Description: One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices...
Show moreOne of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.
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Date Issued: 2007
Identifier: CFE0001551, ucf:47148
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001551

Title: HIGH YIELD ASSEMBLY AND ELECTRON TRANSPORT INVESTIGATION OF SEMICONDUCTING-RICH LOCAL-GATED CARBON NANOTUBE FIELD EFFECT TRANSISTORS.
Creator: Kormondy, Kristy, Khondaker, Saiful, University of Central Florida
Abstract / Description: Single-walled carbon nanotubes (SWNTs) are ideal for use in nanoelectronic devices because of their high current density, mobility and subthreshold swing. However, assembly methods must be developed to reproducibly align all-semiconducting SWNTs at specific locations with individually addressable gates for future integrated circuits. We show high yield assembly of local-gated semiconducting SWNTs assembled via AC-dielectrophoresis (DEP). Using individual local gates and scaling the gate oxide...
Show moreSingle-walled carbon nanotubes (SWNTs) are ideal for use in nanoelectronic devices because of their high current density, mobility and subthreshold swing. However, assembly methods must be developed to reproducibly align all-semiconducting SWNTs at specific locations with individually addressable gates for future integrated circuits. We show high yield assembly of local-gated semiconducting SWNTs assembled via AC-dielectrophoresis (DEP). Using individual local gates and scaling the gate oxide shows faster switching behavior and lower power consumption. The devices were assembled by DEP between prefabricated Pd source and drain electrodes with a thin Al/Al2O3 gate in the middle, and the electrical characteristics were measured before anneal and after anneal. Detailed electron transport investigations on the devices show that 99% display good FET behavior, with an average threshold voltage of 1V, subthreshold swing as low as 140 mV/dec, and on/off current ratio as high as 8x105. Assembly yield can also be increased to 85% by considering devices where 2-5 SWNT bridge the gap between source and drain electrode. To examine the characteristics of devices bridged by more than one SWNT, similar electron transport measurements were taken for 35 devices with electrodes bridged by 2-3 SWNT and 13 devices connected by 4-5 SWNT. This high yield directed assembly of local-gated SWNT-FETs via DEP may facilitate large scale fabrication of CMOS compatible nanoelectronic devices.
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Date Issued: 2011
Identifier: CFH0003841, ucf:44705
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFH0003841

Title: Electronic Transport Investigation of Chemically Derived Reduced Graphene Oxide Sheets.
Creator: Joung, Daeha, Khondaker, Saiful, Chow, Lee, Leuenberger, Michael, Zhai, Lei, University of Central Florida
Abstract / Description: Reduced graphene oxide (RGO) sheet, a chemically functionalized atomically thin carbon sheet, provides a convenient pathway for producing large quantities of graphene via solution processing. The easy processibility of RGO sheet and its composites offer interesting electronic, chemical and mechanical properties that are currently being explored for advanced electronics and energy based materials. However, a clear understanding of electron transport properties of RGO sheet is lacking which is...
Show moreReduced graphene oxide (RGO) sheet, a chemically functionalized atomically thin carbon sheet, provides a convenient pathway for producing large quantities of graphene via solution processing. The easy processibility of RGO sheet and its composites offer interesting electronic, chemical and mechanical properties that are currently being explored for advanced electronics and energy based materials. However, a clear understanding of electron transport properties of RGO sheet is lacking which is of great significance for determining its potential application. In this dissertation, I demonstrate fabrication of high-yield solution based graphene field effects transistor (FET) using AC dielectrophoresis (DEP) and investigate the detailed electronic transport properties of the fabricated devices. The majority of the devices show ambipolar FET properties at room temperature. However, the mobility values are found to be lower than pristine graphene due to a large amount of residual defects in RGO sheets. I calculate the density of these defects by analyzing the low temperature (295 to 77K) charge transport data using space charge limited conduction (SCLC) with exponential trap distribution. At very low temperature (down to 4.2 K), I observe Coulomb blockade (CB) and Efros-Shklovskii variable range hopping (ES VRH) conduction in RGO implying that RGO can be considered as a graphene quantum dots (GQD) array, where graphene domains act like QDs while oxidized domains behave like tunnel barriers between QDs. This was further confirmed by studying RGO sheets of varying carbon sp2 fraction from 55 (-) 80 % and found that both the localization length and CB can be tuned. From the localization length and using confinement effect, we estimate tunable band gap of RGO sheets with varying carbon sp2 fraction. I then studied one dimensional RGO nanoribbon (RGONR) and found ES VRH and CB models are also applicable to the RGONR. However, in contrast to linear behavior of decrease in threshold voltage (Vt) with increasing temperature (T) in the RGO, sub linear dependence of Vt on T was observed in RGONR due to reduced transport pathways. Finally, I demonstrate synthesis and transport studies of RGO/nanoparticles (CdS and CeO2) composite and show that the properties of RGO can be further tuned by attaching the nanoparticles.
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Date Issued: 2012
Identifier: CFE0004785, ucf:49743
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004785

Title: Development of an Efficient Molecular Single-Electron Transport Spectroscopy.
Creator: Rodriguez Garrigues, Alvar, Gonzalez Garcia, Enrique, Flitsiyan, Elena, Ishigami, Marsahir, University of Central Florida
Abstract / Description: In this thesis I present a complete and detailed guide for the development process and fabrication of efficient single-electron transistors (SETs) and a better single-molecule magnets (SMMs) deposition yield. Starting from a commercial Si/SiO2 wafer I show the steps for the deposition of different layers to fabricate a SET as well as the improvements achieved in those for a completely functional SET device. The development process is based on a combination of optical lithography and e-beam...
Show moreIn this thesis I present a complete and detailed guide for the development process and fabrication of efficient single-electron transistors (SETs) and a better single-molecule magnets (SMMs) deposition yield. Starting from a commercial Si/SiO2 wafer I show the steps for the deposition of different layers to fabricate a SET as well as the improvements achieved in those for a completely functional SET device. The development process is based on a combination of optical lithography and e-beam lithography with metal deposition in ultra-high vacuum. The improvements involve a better conductance in the Al gate component, with a controlled formation of the superficial oxide layer and a faster feedback electromigration-induced breaking of Au nanowires for the creation of nanogaps at room temperature. The gate component is improved by increasing its thickness and exposing it to plasma oxidation for the complete oxidation of its surface. The nanowire breaking is realized at room temperature to make use of the surface tension of Au, which, after a previous feedback procedure, eventually opens the final gap in the nanowire. Finally, I demonstrate a new technique that allows increasing the yield of having a SMM connected in the nanowire gap. This new technique is based on monitoring the resistance of the broken nanowires during the SMM deposition from a controlled liquid solution at room temperature. When the resistance ((>)G? for open gaps) drops to values below Mega-ohms (characteristic resistance of a molecule bridging the gap) for a number of nanowires in the chip, the device is then ready for low temperature measurements.
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Date Issued: 2013
Identifier: CFE0004742, ucf:49775
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004742

Title: Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies.
Creator: Liu, Wen, Liou, Juin, Yuan, Jiann-Shiun, Sundaram, Kalpathy, Shen, Zheng, Chen, Quanfang, University of Central Florida
Abstract / Description: Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and...
Show moreElectrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this research is to develop novel, effective and robust ESD protection solutions for both emerging technologies and modern complementary metal(-)oxide(-)semiconductor (CMOS) technologies.The Si nanowire field-effect transistors are projected by the International Technology Roadmap for Semiconductors as promising next-generation CMOS devices due to their superior DC and RF performances, as well as ease of fabrication in existing Silicon processing. Aiming at proposing ESD protection solutions for nanowire based circuits, the dimension parameters, fabrication process, and layout dependency of such devices under Human Body Mode (HBM) ESD stresses are studied experimentally in company with failure analysis revealing the failure mechanism induced by ESD. The findings, including design methodologies, failure mechanism, and technology comparisons should provide practical knowhow of the development of ESD protection schemes for the nanowire based integrated circuits. Organic thin-film transistors (OTFTs) are the basic elements for the emerging flexible, printable, large-area, and low-cost organic electronic circuits. Although there are plentiful studies focusing on the DC stress induced reliability degradation, the operation mechanism of OTFTs subject to ESD is not yet available in the literature and are urgently needed before the organic technology can be pushed into consumer market. In this work, the ESD operation mechanism of OTFT depending on gate biasing condition and dimension parameters are investigated by extensive characterization and thorough evaluation. The device degradation evolution and failure mechanism under ESD are also investigated by specially designed experiments. In addition to the exploration of ESD protection solutions in emerging technologies, efforts have also been placed in the design and analysis of a major ESD protection device, diode-triggered-silicon-controlled-rectifier (DTSCR), in modern CMOS technology (90nm bulk). On the one hand, a new type DTSCR having bi-directional conduction capability, optimized design window, high HBM robustness and low parasitic capacitance are developed utilizing the combination of a bi-directional silicon-controlled-rectifier and bi-directional diode strings. On the other hand, the HBM and Charged Device Mode (CDM) ESD robustness of DTSCRs using four typical layout topologies are compared and analyzed in terms of trigger voltage, holding voltage, failure current density, turn-on time, and overshoot voltage. The advantages and drawbacks of each layout are summarized and those offering the best overall performance are suggested at the end.
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Date Issued: 2012
Identifier: CFE0004571, ucf:49199
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004571

Title: FABRICATION AND TRANSPORT STUDIES OF N-TYPE ORGANIC FIELD EFFECT TRANSISTORS USING ALIGNED ARRAY CARBON NANOTUBES ELECTRODES.
Creator: Jimenez, Edwards, Khondaker, Saiful, University of Central Florida
Abstract / Description: We present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between...
Show moreWe present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between the CNT source and drain electrodes, and compared against a controlled C60 OFET with gold electrodes. The electron transport measurements of the OFETs using CNT electrodes show better transistor characteristics compared to OFETs using gold electrodes due to improved charge injection from densely aligned and open-ended nanotube tips.
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Date Issued: 2012
Identifier: CFH0004217, ucf:44941
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFH0004217

Title: Development of in vitro point of care diagnostics (IVPCD) based on Aptamers integrated Biosensors.(&)nbsp;.
Creator: Saraf, Nileshi, Seal, Sudipta, Fang, Jiyu, Florczyk, Stephen, Dong, Yajie, Self, William, University of Central Florida
Abstract / Description: The global market for the medical diagnostic industry is worth 25 billion dollars in the United States and is expected to grow exponentially each year. Presently available methods for biodetection, such as immunoassays, chemiluminescence and fluorescent based assays are expensive, time consuming and require skilled labor with high-end instruments. Therefore, development of novel, passive colorimetric sensors and diagnostic technologies for detection and surveillance is of utmost importance...
Show moreThe global market for the medical diagnostic industry is worth 25 billion dollars in the United States and is expected to grow exponentially each year. Presently available methods for biodetection, such as immunoassays, chemiluminescence and fluorescent based assays are expensive, time consuming and require skilled labor with high-end instruments. Therefore, development of novel, passive colorimetric sensors and diagnostic technologies for detection and surveillance is of utmost importance especially in resource constrained communities. The present work focusses on developing novel and advanced in vitro biodiagnostic tools based on aptamer integrated biosensors for an early detection of specific viral proteins or small biomolecules used as potential markers for deadly diseases. Aptamers are short single stranded deoxyribonucleic acid (DNA) which are designed to bind to a specific target biomolecule. These are readily synthesized in laboratory and offers several advantages over antibodies/enzymes such as stable in harsh environment, easily functionalized for immobilization, reproducibility etc. These undergo conformational changes upon target binding and produces physical or chemical changes in the system which are measured as colorimetric or electrochemical signals. Here, we have explored the aptamer-analyte interaction on different platforms such as microfluidic channel, paper based substrate as well as organic electrochemical transistor to develop multiple compact, robust and self-contained diagnostic tools. These testing tools exhibit high sensitivity (detection limit in picomolar) and selectivity against the target molecule, require no sophisticated instruments or skilled labor to implement and execute, leading a way to cheaper and more consumer driver health care. These innovative platforms provide flexibility to incorporate additional or alternative targets by simply designing aptamers to bind to the specific biomolecule.
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Date Issued: 2018
Identifier: CFE0007766, ucf:52388
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007766

Title: CONTROLLED ASSEMBLY AND ELECTRONIC TRANSPORT STUDIES OF SOLUTION PROCESSED CARBON NANOTUBE DEVICES.
Creator: Stokes, Paul, Khondaker, Saiful I., University of Central Florida
Abstract / Description: Developing techniques for the parallel fabrication of Complementary Metal Oxide Semiconductor (CMOS) compatible single walled carbon nanotube (SWNT) electronic devices is of great importance for nanoelectronic applications. In this thesis, solution processed SWNTs in combination with AC dielectrophoresis (DEP) were utilized to fabricate CMOS compatible SWNT field effect transistors (FETs) and single electron transistors (SETs) with high yield and their detailed electronic transport properties...
Show moreDeveloping techniques for the parallel fabrication of Complementary Metal Oxide Semiconductor (CMOS) compatible single walled carbon nanotube (SWNT) electronic devices is of great importance for nanoelectronic applications. In this thesis, solution processed SWNTs in combination with AC dielectrophoresis (DEP) were utilized to fabricate CMOS compatible SWNT field effect transistors (FETs) and single electron transistors (SETs) with high yield and their detailed electronic transport properties were studied. Solution processing of SWNTs is attractive not only for the high throughput and parallel manufacturing of SWNT devices but also due to the ease of processing at room temperature, and compatibility with various substrates. However, it is generally believed that solution processing introduces defects and can degrade electronic transport properties. The results presented in this dissertation show that devices assembled from stable solutions of SWNT can give rise to high quality FET devices at room temperature and relatively clean SET behavior at low temperature. This is a strong indication that there are no or few intrinsic defects in the SWNTs. The dissertation will also discuss the controlled fabrication of size tunable SWNT SET devices using a novel mechanical template approach which offers a route towards the parallel fabrication of room temperature SET devices. The approach is based on the formation of two tunnel barriers created in a SWNT a distance L apart by bending the SWNT at the edge of a local Al/Al2O3 bottom gate. The local gate tunes individual electrons one by one in the device and defines the size of the quantum dot though its width. By tuning both the back gate and local gate, it is possible to tune the transparency of tunnel barriers and the size of the quantum dot further. Detailed transport spectroscopy of these devices will be presented.
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Date Issued: 2010
Identifier: CFE0003061, ucf:48310
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003061

Title: SINGLE-ELECTRON TRANSPORT SPECTROSCOPY STUDIES OF MAGNETIC MOLECULES AND NANOPARTICLES.
Creator: Haque, Md. Firoze, del Barco, Enrique, University of Central Florida
Abstract / Description: Magnetic nanoparticles and molecules, in particular ferromagnetic noble metal nanoparticles, molecular magnet and single-molecule magnets (SMM), are perfect examples to investigate the role of quantum mechanics at the nanoscale. For example, SMMs are known to reverse their magnetization by quantum tunneling in the absence of thermal excitation and show a number of fundamental quantum mechanical manifestations, such as quantum interference effects. On the other hand, noble metal nanoparticles...
Show moreMagnetic nanoparticles and molecules, in particular ferromagnetic noble metal nanoparticles, molecular magnet and single-molecule magnets (SMM), are perfect examples to investigate the role of quantum mechanics at the nanoscale. For example, SMMs are known to reverse their magnetization by quantum tunneling in the absence of thermal excitation and show a number of fundamental quantum mechanical manifestations, such as quantum interference effects. On the other hand, noble metal nanoparticles are found to behave ferromagnetically for diameters below a few nanometers. Some of these manifestations are still intriguing, and novel research approaches are necessary to advance towards a more complete understanding of these exciting nanoscale systems. In particular, the ability to study an isolated individual nanoscale system (i.e just one molecule or nanoparticle) is both challenging technologically and fundamentally essential. It is expected that accessing to the energy landscape of an isolated molecule/nanoparticle will allow unprecedented knowledge of the basic properties that are usually masked by collective phenomena when the systems are found in large ensembles or in their crystal form. Several approaches to this problem are currently under development by a number of research groups. For instance, some groups are developing deposition techniques to create patterned thin films of isolated magnetic nanoparticles and molecular magnets by means of optical lithography, low-energy laser ablation, or pulsed-laser evaporation or specific chemical functionalization of metallic surfaces with special molecular ligands. However, it is still a challenge to access the properties of an individual molecule or nanoparticle within a film or substrate. I have studied molecular nanomagnets and ferromagnetic noble metal nanoparticles by means of a novel experimental approach that mixes the chemical functionalization of nano-systems with the use of single-electron transistors (SETs). I have observed the Coulomb-blockade single-electron transport response through magnetic gold nanoparticles and single-molecule magnet. In particular, Coulomb-blockade response of a Mn4-based SET device recorded at 240 mK revealed the appearance of two diamonds (two charge states) with a clear switch between one and the other is indicative of a conformational switching of the molecule between two different states. The excitations inside the diamonds move with magnetic field. The curvature of the excitations and the fact of having them not going down to zero energy for zero magnetic field, indicated the presence of magnetic anisotropy (zero-field splitting) in the molecule. In addition, the high magnetic field slope of the excitations indicates that transitions between charge states differ by a net spin value equal to 9 (dS = 9), as expected from the behavior of Mn4 molecules in their crystalline form. Anticrossings between different excitations are indicative of quantum superpositions of the molecular states, which are observed for the first time in transport measurements through and individual SMM.
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Date Issued: 2011
Identifier: CFE0003718, ucf:48776
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003718

Title: Nanoelectronic Devices using Carbon Nanotubes and Graphene Electrodes: Fabrication and Electronic Transport Investigations.
Creator: Kang, Narae, Khondaker, Saiful, Leuenberger, Michael, Zhai, Lei, University of Central Florida
Abstract / Description: Fabrication of high-performance electronic devices using the novel semiconductors is essential for developing future electronics which can be applicable in large-area, flexible and transparent displays, sensors and solar cells. One of the major bottlenecks in the fabrication of high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the...
Show moreFabrication of high-performance electronic devices using the novel semiconductors is essential for developing future electronics which can be applicable in large-area, flexible and transparent displays, sensors and solar cells. One of the major bottlenecks in the fabrication of high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the interface. Therefore, having a favorable contact at electrode/semiconductor is highly desirable for high-performance devices fabrication.In this dissertation, the fabrication of nanoelectronic devices and investigation of their transport properties using carbon nanotubes (CNTs) and graphene as electrode materials will be shown. I investigated two types of devices using (i) semiconducting CNTs, and (ii) organic semiconductors (OSC). In the first part of this thesis, I will demonstrate the fabrication of high-performance solution-processed highly enriched (99%) semiconducting CNT thin film transistors (s-CNT TFTs) using densely aligned arrays of metallic CNTs (m-CNTs) for source/drain electrodes. From the electronic transport measurements at room temperature, significant improvements of field-effect mobility, on-conductance, transconductance and current on/off ratio for m-CNT/s-CNT devices were found compared to control palladium (Pd contacted s-CNT devices. From the temperature dependent transport investigation, a lower Schottky barrier height for the m-CNT/s-CNT devices was found compared to the devices with control metal electrodes. The enhanced device performance can be attributed to the unique device geometry as well as strong ?- ? interaction at m-CNT/s-CNT interfaces. In addition, I also investigated s-CNT TFTs using reduced graphene oxide (RGO) electrodes.In the second part of my thesis, I will demonstrate high-performance organic field-effect transistors (OFETs) using different types of graphene electrodes. I show that the performance of OFETs with pentacene as OSC and RGO as electrode can be continuously improved by increasing the carbon sp2 fraction of RGO. The carbon sp2 fractions of RGO were varied by controlling the reduction time. When compared to control Pd electrodes, the mobility of the OFETs shows an improvement of ?200% for 61% sp2 fraction RGO, which further improves to ?500% for 80% RGO electrode. Similarly, I show that when the chemical vapor deposition (CVD) graphene film is used as electrodes in fabricating OFET, the better performance is observed in comparison to RGO electrodes. Our study suggests that, in addition to ?-? interaction at graphene/pentacene interface, the tunable electronic properties of graphene as electrode have a significant role in OFETs performance. For a fundamental understanding of the interface, we fabricated short-channel OFETs with sub-100nm channel length using graphene electrode. From the low temperature electronic transport measurements, a lower charge injection barrier was found compared to control metal electrode. The detailed investigations reported in this thesis clearly indicated that the use of CNT and graphene as electrodes can improve the performance of future nanoelectronic devices.
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Date Issued: 2015
Identifier: CFE0006039, ucf:50982
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006039

Title: The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors.
Creator: Kang, Narae, Khondaker, Saiful, Leuenberger, Michael, Zhai, Lei, University of Central Florida
Abstract / Description: Organic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display, integrated circuit, and radiofrequency identification tags. One of the major limiting factors in fabricating high-performance OFET is the large interfacial barrier between metal electrodes and OSC which...
Show moreOrganic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display, integrated circuit, and radiofrequency identification tags. One of the major limiting factors in fabricating high-performance OFET is the large interfacial barrier between metal electrodes and OSC which results in low charge injection from the metal electrodes to OSC. In order to overcome the challenge of low charge injection, carbon nanotubes (CNTs) have been suggested as a promising electrode material for organic electronic devices. In this dissertation, we study the effect of carbon nanotube (CNT) density in CNT electrodes on the performance of organic field effect transistor (OFETs). The devices were fabricated by thermal evaporation of pentacene on the Pd/single walled CNT (SWCNT) electrodes where SWCNTs of different density (0-30/um) were aligned on Pd using dielectrophoresis (DEP) and cut via oxygen plasma etching to keep the length of nanotube short compared to the channel length. From the electronic transport measurements of 40 devices, we show that the average saturation mobility of the devices increased from 0.02 for zero SWCNT to 0.06, 0.13 and 0.19 cm2/Vs for low (1-5 /(&)#181;m), medium (10-15 /(&)#181;m) and high (25-30 /(&)#181;m) SWCNT density in the electrodes, respectively. The increase is three, six and nine times for low, medium and high density SWCNTs in the electrode compared to the devices that did not contain any SWCNT. In addition, the current on-off ratio and on-current of the devices are increased up to 40 times and 20 times with increasing SWCNT density in the electrodes. Our study shows that although a few nanotubes in the electrode can improve the OFET device performance, significant improvement can be achieved by maximizing SWCNT/OSC interfacial area. The improved OFET performance can be explained due to a reduced barrier height of SWCNT/pentacene interface compared to metal/pentacene interface which provides more efficient charge injection pathways with increased SWCNT/pentacene interfacial area.
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Date Issued: 2012
Identifier: CFE0004558, ucf:49252
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004558

Title: Nano-pipette as nanoparticle analyzer and capillary gated ion transistor.
Creator: Rudzevich, Yauheni, Chow, Lee, Heinrich, Helge, Schulte, Alfons, Yuan, Jiann-Shiun, University of Central Florida
Abstract / Description: The ability to precisely count inorganic and organic nanoparticles and to measure their size distribution plays a major role in various applications such as drug delivery, nanoparticles counting, and many others. In this work I present a simple resistive pulse method that allows translocations, counting, and measuring the size and velocity distribution of silica nanoparticles and liposomes with diameters from 50 nm to 250 nm. This technique is based on the Coulter counter technique, but has...
Show moreThe ability to precisely count inorganic and organic nanoparticles and to measure their size distribution plays a major role in various applications such as drug delivery, nanoparticles counting, and many others. In this work I present a simple resistive pulse method that allows translocations, counting, and measuring the size and velocity distribution of silica nanoparticles and liposomes with diameters from 50 nm to 250 nm. This technique is based on the Coulter counter technique, but has nanometer size pores. It was found that ionic current drops when nanoparticles enter the nanopore of a pulled micropipette, producing a clear translocation signal. Pulled borosilicate micropipettes with opening 50 ~ 350 nm were used as the detecting instrument. This method provides a direct, fast and cost-effective way to characterize inorganic and organic nanoparticles in a solution. In this work I also introduce a newly developed Capillary Ionic Transistor (CIT). It is presented as a nanodevice which provides control of ionic transport through nanochannel by gate voltage. CIT is Ionic transistor, which employs pulled capillary as nanochannel with a tip diameter smaller than 100 mm. We observed that the gate voltage applied to gate electrode, deposited on the outer wall of a capillary, affect a conductance of nanochannel, due to change of surface charge at the solution/capillary interface. Negative gate voltage corresponds to lower conductivity and positive gate increases conductance of the channel. This effect strongly depends on the size of the channel. In general, at least one dimension of the channel has to be small enough for electrical double layer to overlap.
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Date Issued: 2014
Identifier: CFE0005880, ucf:50882
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005880

Title: Electrostatic control over temperature-dependent tunneling across single-molecule junctions.
Creator: Rodriguez Garrigues, Alvar, Del Barco, Enrique, Flitsiyan, Elena, Ishigami, Masa, Hernandez, Eloy, University of Central Florida
Abstract / Description: The aim of the present dissertation is to improve the understanding and methodology of temperature-dependent tunnel conduction through individual molecules by single-electron transport spectroscopy. New advances in electrochemistry present individual molecular diodes as a realistic option for the implementation on molecular circuits thanks to their high current rectification ratios. Therefore, a major requisite in this field is to understand and control the conduction behaviors for a large...
Show moreThe aim of the present dissertation is to improve the understanding and methodology of temperature-dependent tunnel conduction through individual molecules by single-electron transport spectroscopy. New advances in electrochemistry present individual molecular diodes as a realistic option for the implementation on molecular circuits thanks to their high current rectification ratios. Therefore, a major requisite in this field is to understand and control the conduction behaviors for a large variety of conditions. This work focuses on the electric conduction through ferrocene-based molecules as a function of temperatures within a wide range of bias and gate voltages by means of three-terminal electromigrated-broken single-electron transistors (SETs).The results show that the temperature dependence of the current (from 80 to 260 K) depends strongly on the bias and gate voltages, with areas in where the current increases exponentially with temperature (at the Coulomb blockade regimes), and others where the increase of the temperature makes the current only to vary slightly (at resonance) or to decrease monotonically (at the charge degeneracy points). These different observed behaviors of the tunneling current with increasing temperatures can be well explained by a formal single-level coherent tunneling model where the temperature dependence relies on the thermal broadening of the Fermi distributions of the electrons in the leads. The model portraits the molecule as a localized electrostatic level capacitively coupled to the transistor leads, and the electrical conduction through the junction as coherent sequential tunneling.
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Date Issued: 2016
Identifier: CFE0006171, ucf:51132
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006171

Title: FINITE ELEMENT METHOD MODELING OF ADVANCED ELECTRONIC DEVICES.
Creator: Chen, Yupeng, Wu, Thomas, University of Central Florida
Abstract / Description: In this dissertation, we use finite element method together with other numerical techniques to study advanced electron devices. We study the radiation properties in electron waveguide structure with multi-step discontinuities and soft wall lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In...
Show moreIn this dissertation, we use finite element method together with other numerical techniques to study advanced electron devices. We study the radiation properties in electron waveguide structure with multi-step discontinuities and soft wall lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In particular, the periodic corrugation structure exhibits strong directional radiation. This interesting feature may be useful to design a nano-scale transmitter, a communication device for future nano-scale system. Non-quasi-static effects in AC characteristics of carbon nanotube field-effect transistors are examined by solving a full time-dependent, open-boundary Schrödinger equation. The non-quasi-static characteristics, such as the finite channel charging time, and the dependence of small signal transconductance and gate capacitance on the frequency, are explored. The validity of the widely used quasi-static approximation is examined. The results show that the quasi-static approximation overestimates the transconductance and gate capacitance at high frequencies, but gives a more accurate value for the intrinsic cut-off frequency over a wide range of bias conditions. The influence of metal interconnect resistance on the performance of vertical and lateral power MOSFETs is studied. Vertical MOSFETs in a D2PAK and DirectFET package, and lateral MOSFETs in power IC and flip chip are investigated as the case studies. The impact of various layout patterns and material properties on RDS(on) will provide useful guidelines for practical vertical and lateral power MOSFETs design.
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Date Issued: 2006
Identifier: CFE0001389, ucf:46987
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001389

Title: ELECTRON TRANSPORT IN SINGLE MOLECULE MAGNET TRANSISTORS AND OPTICAL LAMBDA TRANSITIONS IN THE NITROGEN-VACANCY CENTER IN DIAMOND.
Creator: Gonzalez, Gabriel, Leuenberger, Michael, University of Central Florida
Abstract / Description: This thesis presents some theoretical studies dealing with quantum interference effects in electron transport through single molecule magnet transistors and a study on optical non-conserving spin transitions in the Nitrogen-vacancy center in diamond. The thesis starts with a brief general introduction to the physics of quantum transport through single electron transistors. Afterwards, the main body of the thesis is divided into three studies: (i) In chapter (2) we describe the properties of...
Show moreThis thesis presents some theoretical studies dealing with quantum interference effects in electron transport through single molecule magnet transistors and a study on optical non-conserving spin transitions in the Nitrogen-vacancy center in diamond. The thesis starts with a brief general introduction to the physics of quantum transport through single electron transistors. Afterwards, the main body of the thesis is divided into three studies: (i) In chapter (2) we describe the properties of single molecule magnets and the Berry phase interference present in this nanomagnets. We then propose a way to detect quantum interference experimentally in the current of a single molecule magnet transistor using polarized leads. We apply our theoretical results to the newly synthesized nanomagnet Ni4. (ii) In chapter (3) we review the Kondo effect and present a microscopic derivation of the Kondo Hamiltonian suitable for full and half integer spin nanomagnets. We then calculate the conductance of the single molecule magnet transistor in the presence of the Kondo effect for Ni4 and show how the Berry phase interference becomes temperature dependent. (iii) We conclude in chapter (4) with a theoretical study of the single Nitrogen vacancy defect center in diamond. We show that it is possible to have spin non-conserving transitions via the hyperfine interaction and propose a way to write and read quantum information using circularly polarized light by means of optical Lambda transitions in this solid state system.
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Date Issued: 2009
Identifier: CFE0002740, ucf:48179
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002740

Title: IMPACT OF GAMMA-IRRADIATION ON THE CHARACTERISTICS OF III-N/GaN BASED HIGH ELECTRON MOBILITY TRANSISTORS.
Creator: Yadav, Anupama, Flitsiyan, Elena, Chernyak, Leonid, Peale, Robert, Richie, Samuel, University of Central Florida
Abstract / Description: In this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices' transport and optical properties were analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a...
Show moreIn this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices' transport and optical properties were analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a significant role in development and design of radiation resistant semiconductor components for different applications. Electrical testing combined with temperature dependent Electron Beam Induced Current (EBIC) that we used in our investigations, provided critical information on defects induced in the material because of gamma-irradiation. It was shown that low dose (below ~250 Gy) and high doses (above ~250 Gy) of gamma-irradiation affects the AlGaN/GaN HEMTs due to different mechanisms. For low doses of gamma-irradiation, the improvement in minority carrier diffusion length is likely associated with the irradiation-induced growing lifetime of the non-equilibrium carriers. However, with the increased dose of irradiation (above ~ 250 Gy), the concentration of point defects, such as nitrogen vacancies, as well as the complexes involving native defects increases which results in the non-equilibrium carrier scattering. The impact of defect scattering is more pronounced at higher radiation, which leads to the degradation in the mobility and therefore the diffusion length. In addition for each device under investigation, the temperature dependent minority carrier diffusion length measurements were carried out. These measurements allowed the extraction of the activation energy for the temperature-induced enhancement of the minority carrier transport, which (activation energy) bears a signature of defect levels involved the carrier recombination process. Comparing the activation energy before and after gamma-irradiation identified the radiation-induced defect levels and their dependences. To complement EBIC measurements, spatially resolved Cathodoluminescence (CL) measurements were carried out at variable temperatures. Similar to the EBIC measurements, CL probing before and after the gamma-irradiation allowed the identification of possible defect levels generated as a result of gamma-bombardment. The observed decrease in the CL peak intensity after gamma-irradiation provides the direct evidence of the decrease in the number of recombination events. Based on the findings, the decay in the near-band-edge intensity after low-dose of gamma-irradiation (below ~250 Gy) was explained as a consequence of increased non-equilibrium carrier lifetime. For high doses (above ~250 Gy), decay in the CL intensity was observed to be related to the reduction in the mobility of charge carriers. The results of EBIC are correlated with the CL measurements in order to demonstrate that same underlying process is responsible for the changes induced by the gamma-irradiation. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate and drain characteristics. Exposure of AlGaN/GaN HEMTs to high dose of 60Co gamma-irradiation (above ~ 250 Gy) resulted in significant device degradation. Gamma-rays doses up to 1000 Gy are shown to result in positive shift in threshold voltage, a reduction in the drain current and transconductance due to increased trapping of carriers and dispersion of charge. In addition, a significant increase in the gate leakage current was observed in both forward and reverse directions after irradiation. Post-irradiation annealing at relatively low temperature was shown to restore the minority carrier transport as well as the electrical characteristics of the devices. The level of recovery of gamma-irradiated devices after annealing treatment depends on the dose of the irradiation. The devices that show most recovery for a particular annealing temperature are those exposed to the low doses of gamma-irradiation, while those exposed to the highest doses results in no recovery of performance. The latter fact indicates that a higher device annealing temperature is needed for larger doses of gamma-irradiation.
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Date Issued: 2016
Identifier: CFE0006424, ucf:51458
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006424

Title: Fabrication and Study of Graphene-Based Nanocomposites for Sensing and Energy Applications.
Creator: McInnis, Matthew, Zhai, Lei, Yestrebsky, Cherie, Zou, Shengli, Blair, Richard, Chen, Quanfang, University of Central Florida
Abstract / Description: Graphite is an allotrope of carbon made up of atomically thin sheets, each covalently bound together, forming a ?-conjugated network. An individual layer, called graphene, has extraordinary electrical, thermal and physical properties that provide the opportunity for innovating new functional composites. Graphene can be produced directly on a metallic substrate by chemical vapor deposition or by chemical oxidation of graphite, forming a stable aqueous suspension of graphene oxide (GO), which...
Show moreGraphite is an allotrope of carbon made up of atomically thin sheets, each covalently bound together, forming a ?-conjugated network. An individual layer, called graphene, has extraordinary electrical, thermal and physical properties that provide the opportunity for innovating new functional composites. Graphene can be produced directly on a metallic substrate by chemical vapor deposition or by chemical oxidation of graphite, forming a stable aqueous suspension of graphene oxide (GO), which allows for convenient solution processing techniques. For the latter, after thermal or chemical reduction, much of the properties of the starting graphene re-emerge due to the reestablishment of ?-conjugation. The ?-conjugated basal plane of graphene has been shown to influence the crystallization of ?-conjugated polymers, providing thermodynamically strong nucleation sites through the relatively strong ?-? interactions. These polymers can homocrystallize into 1-D filaments, but when nucleated from graphene, the orientation and geometry can be controlled producing hierarchical structures containing an electrical conductor decorated with wires of semi-conducting polymer. The resulting structures and crystallization kinetics of the conjugated polymer, poly(3-hexylthiophene-2,5-diyl) (P3HT) nucleated by graphene was studied. Further, field-effect transistors were developed using graphene as both the electrodes and the polymer crystallization surface to directly grow P3HT nanowires as the active material. This direct crystallization technique lead to higher charge mobility and higher on-off ratios, and this result was interpreted in terms of the morphology and polymer-graphene interface.Besides these thin-film technologies, neat GO suspensions can be lyophilized to produce monolithic, free-standing aerogels and then reduced to produce an electrically conductive porous material with a surface area greater than 1000 m2/g. The present research focuses on functionalizing the aerogel surfaces with metal nanoparticles to increase electrical conductivity and to impart functionality. Functionalization was carried out by adding a metal salt as a precursor and a chelating agent to inhibit GO flocculation. The GO and metal salt were simultaneously reduced to form rGO aerogels homogeneously loaded with metal nanoparticles. The size and distribution of these nanoparticles was controlled by concentration and chelating agent identity and abundance. Optimum aerogel formulations were used as a functioning and reversible conductometric hydrogen gas sensor and as an anode in an asymmetric supercapacitor with excellent properties.
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Date Issued: 2015
Identifier: CFE0006227, ucf:51066
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006227

electron transport (4)	+ -
carbon nanotubes (2)	+ -
dielectrophoresis (2)	+ -
graphene (2)	+ -
graphene oxide (2)	+ -

nanoelectronics (2)	+ -
single-electron transistors (2)	+ -
solution processed (2)	+ -
Adaptable Computer Architecture (1)	+ -
AlGaN/GaN (1)	+ -
Amplifiers (Electronics) (1)	+ -
Anticrossing (1)	+ -
Application Specific Integrated Circuit (ASIC) (1)	+ -
Application Vulnerability Characterization (1)	+ -
Aptamers (1)	+ -
Berry-phase interference (1)	+ -
Bias Temperature Instability (BTI) (1)	+ -
C60 (1)	+ -
Carbon Nanotube (1)	+ -
Carbon Nanotube Field-effect transistors (1)	+ -
Carbon nanotube (1)	+ -
Cathodoluminescence (1)	+ -
Charge Injection (1)	+ -
Charge Transport (1)	+ -
Charged Device Mode (1)	+ -
Chikungunya (1)	+ -
Common Mode Failure (CMF) (1)	+ -
Compiler Optimizations (1)	+ -
Design Diversity (1)	+ -
Design Guardband (1)	+ -

ETD Collection (20)	+ -
Honors Collection (2)	+ -

University of Central Florida (21)	+ -
Khondaker, Saiful (6)	+ -
Zhai, Lei (5)	+ -
Leuenberger, Michael (4)	+ -
Chow, Lee (3)	+ -

Flitsiyan, Elena (3)	+ -
Chen, Quanfang (2)	+ -
Kang, Narae (2)	+ -
Rodriguez Garrigues, Alvar (2)	+ -
Yuan, Jiann-Shiun (2)	+ -
Ashraf, Rizwan (1)	+ -
Behal, Aman (1)	+ -
Blair, Richard (1)	+ -
Chen, Yupeng (1)	+ -
Chernyak, Leonid (1)	+ -
DeMara, Ronald (1)	+ -
Del Barco, Enrique (1)	+ -
Ding, Hao (1)	+ -
Dong, Yajie (1)	+ -
Engineering (1)	+ -
Fang, Jiyu (1)	+ -
Florczyk, Stephen (1)	+ -
Gonzalez Garcia, Enrique (1)	+ -
Gonzalez, Gabriel (1)	+ -
Haque, Md. Firoze (1)	+ -
Heinrich, Helge (1)	+ -
Hernandez, Eloy (1)	+ -
Hickman, James (1)	+ -
Ishigami, Marsahir (1)	+ -
Ishigami, Masa (1)	+ -

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