Current Search: Carbon Nanotube Field-effect transistors (x)
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- Title
- HIGH YIELD ASSEMBLY AND ELECTRON TRANSPORT INVESTIGATION OF SEMICONDUCTING-RICH LOCAL-GATED CARBON NANOTUBE FIELD EFFECT TRANSISTORS.
- Creator
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Kormondy, Kristy, Khondaker, Saiful, University of Central Florida
- Abstract / Description
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Single-walled carbon nanotubes (SWNTs) are ideal for use in nanoelectronic devices because of their high current density, mobility and subthreshold swing. However, assembly methods must be developed to reproducibly align all-semiconducting SWNTs at specific locations with individually addressable gates for future integrated circuits. We show high yield assembly of local-gated semiconducting SWNTs assembled via AC-dielectrophoresis (DEP). Using individual local gates and scaling the gate oxide...
Show moreSingle-walled carbon nanotubes (SWNTs) are ideal for use in nanoelectronic devices because of their high current density, mobility and subthreshold swing. However, assembly methods must be developed to reproducibly align all-semiconducting SWNTs at specific locations with individually addressable gates for future integrated circuits. We show high yield assembly of local-gated semiconducting SWNTs assembled via AC-dielectrophoresis (DEP). Using individual local gates and scaling the gate oxide shows faster switching behavior and lower power consumption. The devices were assembled by DEP between prefabricated Pd source and drain electrodes with a thin Al/Al2O3 gate in the middle, and the electrical characteristics were measured before anneal and after anneal. Detailed electron transport investigations on the devices show that 99% display good FET behavior, with an average threshold voltage of 1V, subthreshold swing as low as 140 mV/dec, and on/off current ratio as high as 8x105. Assembly yield can also be increased to 85% by considering devices where 2-5 SWNT bridge the gap between source and drain electrode. To examine the characteristics of devices bridged by more than one SWNT, similar electron transport measurements were taken for 35 devices with electrodes bridged by 2-3 SWNT and 13 devices connected by 4-5 SWNT. This high yield directed assembly of local-gated SWNT-FETs via DEP may facilitate large scale fabrication of CMOS compatible nanoelectronic devices.
Show less - Date Issued
- 2011
- Identifier
- CFH0003841, ucf:44705
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFH0003841
- Title
- Parallel fabrication and transport properties of carbon nanotube single electron transistors.
- Creator
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Islam, Muhammad, Khondaker, Saiful, Chow, Lee, Stolbov, Sergey, Zhai, Lei, University of Central Florida
- Abstract / Description
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Single electron transistors (SET) have attracted significant attention as a potential building block for post CMOS nanoelectronic devices. However, lack of reproducible and parallel fabrication approach and room temperature operation are the two major bottlenecks for practical realization of SET based devices. In this thesis, I demonstrate large scale single electron transistors fabrication techniques using solution processed single wall carbon nanotubes (SWNTs) and studied their electron...
Show moreSingle electron transistors (SET) have attracted significant attention as a potential building block for post CMOS nanoelectronic devices. However, lack of reproducible and parallel fabrication approach and room temperature operation are the two major bottlenecks for practical realization of SET based devices. In this thesis, I demonstrate large scale single electron transistors fabrication techniques using solution processed single wall carbon nanotubes (SWNTs) and studied their electron transport properties. The approach is based on the assembly of individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit and formation of tunnel barriers on SWNT. Two different techniques: i) metal-SWNT Schottky contact, and ii) mechanical templating of SWNTs were used for tunnel barrier creation.Low temperature (4.2K) transport measurement of 100 nm long metal-SWNT Schottky contact devices show that 93% of the devices with contact resistance (RT) (>) 100 K? show SET behavior. Majority (90%) of the devices with 100 K? (<) RT (<) 1 M?, show periodic, well-de?ned Coulomb diamonds with a charging energy ~ 15 meV, represents single electron tunnelling through a single quantum dot (QD), defined by the top contact. For high RT ((>) 1M?), devices show multiple QDs behaviors, while QD was not formed for low RT ((<) 100 K?) devices. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving an yield of 76%. I also demonstrate room temperature operating SET by using mechanical template technique. In mechanical template method individual SWNT is placed on top of a Al/Al2O3 local gate which bends the SWNT at the edge and tunnel barriers are created. SET devices fabricated with a template width of ~20 nm shows room temperature operation with a charging energy of ~150 meV. I also discussed the detailed transport spectroscopy of the devices.
Show less - Date Issued
- 2015
- Identifier
- CFE0006037, ucf:50987
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006037
- Title
- Nanoelectronic Devices using Carbon Nanotubes and Graphene Electrodes: Fabrication and Electronic Transport Investigations.
- Creator
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Kang, Narae, Khondaker, Saiful, Leuenberger, Michael, Zhai, Lei, University of Central Florida
- Abstract / Description
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Fabrication of high-performance electronic devices using the novel semiconductors is essential for developing future electronics which can be applicable in large-area, flexible and transparent displays, sensors and solar cells. One of the major bottlenecks in the fabrication of high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the...
Show moreFabrication of high-performance electronic devices using the novel semiconductors is essential for developing future electronics which can be applicable in large-area, flexible and transparent displays, sensors and solar cells. One of the major bottlenecks in the fabrication of high-performance devices is a large interfacial barrier formation at metal/semiconductor interface originated from Schottky barrier and interfacial dipole barrier which causes inefficient charge injection at the interface. Therefore, having a favorable contact at electrode/semiconductor is highly desirable for high-performance devices fabrication.In this dissertation, the fabrication of nanoelectronic devices and investigation of their transport properties using carbon nanotubes (CNTs) and graphene as electrode materials will be shown. I investigated two types of devices using (i) semiconducting CNTs, and (ii) organic semiconductors (OSC). In the first part of this thesis, I will demonstrate the fabrication of high-performance solution-processed highly enriched (99%) semiconducting CNT thin film transistors (s-CNT TFTs) using densely aligned arrays of metallic CNTs (m-CNTs) for source/drain electrodes. From the electronic transport measurements at room temperature, significant improvements of field-effect mobility, on-conductance, transconductance and current on/off ratio for m-CNT/s-CNT devices were found compared to control palladium (Pd contacted s-CNT devices. From the temperature dependent transport investigation, a lower Schottky barrier height for the m-CNT/s-CNT devices was found compared to the devices with control metal electrodes. The enhanced device performance can be attributed to the unique device geometry as well as strong ?- ? interaction at m-CNT/s-CNT interfaces. In addition, I also investigated s-CNT TFTs using reduced graphene oxide (RGO) electrodes.In the second part of my thesis, I will demonstrate high-performance organic field-effect transistors (OFETs) using different types of graphene electrodes. I show that the performance of OFETs with pentacene as OSC and RGO as electrode can be continuously improved by increasing the carbon sp2 fraction of RGO. The carbon sp2 fractions of RGO were varied by controlling the reduction time. When compared to control Pd electrodes, the mobility of the OFETs shows an improvement of ?200% for 61% sp2 fraction RGO, which further improves to ?500% for 80% RGO electrode. Similarly, I show that when the chemical vapor deposition (CVD) graphene film is used as electrodes in fabricating OFET, the better performance is observed in comparison to RGO electrodes. Our study suggests that, in addition to ?-? interaction at graphene/pentacene interface, the tunable electronic properties of graphene as electrode have a significant role in OFETs performance. For a fundamental understanding of the interface, we fabricated short-channel OFETs with sub-100nm channel length using graphene electrode. From the low temperature electronic transport measurements, a lower charge injection barrier was found compared to control metal electrode. The detailed investigations reported in this thesis clearly indicated that the use of CNT and graphene as electrodes can improve the performance of future nanoelectronic devices.
Show less - Date Issued
- 2015
- Identifier
- CFE0006039, ucf:50982
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006039
- Title
- FABRICATION AND TRANSPORT STUDIES OF N-TYPE ORGANIC FIELD EFFECT TRANSISTORS USING ALIGNED ARRAY CARBON NANOTUBES ELECTRODES.
- Creator
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Jimenez, Edwards, Khondaker, Saiful, University of Central Florida
- Abstract / Description
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We present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between...
Show moreWe present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between the CNT source and drain electrodes, and compared against a controlled C60 OFET with gold electrodes. The electron transport measurements of the OFETs using CNT electrodes show better transistor characteristics compared to OFETs using gold electrodes due to improved charge injection from densely aligned and open-ended nanotube tips.
Show less - Date Issued
- 2012
- Identifier
- CFH0004217, ucf:44941
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFH0004217
- Title
- The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors.
- Creator
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Kang, Narae, Khondaker, Saiful, Leuenberger, Michael, Zhai, Lei, University of Central Florida
- Abstract / Description
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Organic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display, integrated circuit, and radiofrequency identification tags. One of the major limiting factors in fabricating high-performance OFET is the large interfacial barrier between metal electrodes and OSC which...
Show moreOrganic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display, integrated circuit, and radiofrequency identification tags. One of the major limiting factors in fabricating high-performance OFET is the large interfacial barrier between metal electrodes and OSC which results in low charge injection from the metal electrodes to OSC. In order to overcome the challenge of low charge injection, carbon nanotubes (CNTs) have been suggested as a promising electrode material for organic electronic devices. In this dissertation, we study the effect of carbon nanotube (CNT) density in CNT electrodes on the performance of organic field effect transistor (OFETs). The devices were fabricated by thermal evaporation of pentacene on the Pd/single walled CNT (SWCNT) electrodes where SWCNTs of different density (0-30/um) were aligned on Pd using dielectrophoresis (DEP) and cut via oxygen plasma etching to keep the length of nanotube short compared to the channel length. From the electronic transport measurements of 40 devices, we show that the average saturation mobility of the devices increased from 0.02 for zero SWCNT to 0.06, 0.13 and 0.19 cm2/Vs for low (1-5 /(&)#181;m), medium (10-15 /(&)#181;m) and high (25-30 /(&)#181;m) SWCNT density in the electrodes, respectively. The increase is three, six and nine times for low, medium and high density SWCNTs in the electrode compared to the devices that did not contain any SWCNT. In addition, the current on-off ratio and on-current of the devices are increased up to 40 times and 20 times with increasing SWCNT density in the electrodes. Our study shows that although a few nanotubes in the electrode can improve the OFET device performance, significant improvement can be achieved by maximizing SWCNT/OSC interfacial area. The improved OFET performance can be explained due to a reduced barrier height of SWCNT/pentacene interface compared to metal/pentacene interface which provides more efficient charge injection pathways with increased SWCNT/pentacene interfacial area.
Show less - Date Issued
- 2012
- Identifier
- CFE0004558, ucf:49252
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004558
- Title
- FINITE ELEMENT METHOD MODELING OF ADVANCED ELECTRONIC DEVICES.
- Creator
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Chen, Yupeng, Wu, Thomas, University of Central Florida
- Abstract / Description
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In this dissertation, we use finite element method together with other numerical techniques to study advanced electron devices. We study the radiation properties in electron waveguide structure with multi-step discontinuities and soft wall lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In...
Show moreIn this dissertation, we use finite element method together with other numerical techniques to study advanced electron devices. We study the radiation properties in electron waveguide structure with multi-step discontinuities and soft wall lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In particular, the periodic corrugation structure exhibits strong directional radiation. This interesting feature may be useful to design a nano-scale transmitter, a communication device for future nano-scale system. Non-quasi-static effects in AC characteristics of carbon nanotube field-effect transistors are examined by solving a full time-dependent, open-boundary Schrödinger equation. The non-quasi-static characteristics, such as the finite channel charging time, and the dependence of small signal transconductance and gate capacitance on the frequency, are explored. The validity of the widely used quasi-static approximation is examined. The results show that the quasi-static approximation overestimates the transconductance and gate capacitance at high frequencies, but gives a more accurate value for the intrinsic cut-off frequency over a wide range of bias conditions. The influence of metal interconnect resistance on the performance of vertical and lateral power MOSFETs is studied. Vertical MOSFETs in a D2PAK and DirectFET package, and lateral MOSFETs in power IC and flip chip are investigated as the case studies. The impact of various layout patterns and material properties on RDS(on) will provide useful guidelines for practical vertical and lateral power MOSFETs design.
Show less - Date Issued
- 2006
- Identifier
- CFE0001389, ucf:46987
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001389
- Title
- Fabrication and Study of Graphene-Based Nanocomposites for Sensing and Energy Applications.
- Creator
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McInnis, Matthew, Zhai, Lei, Yestrebsky, Cherie, Zou, Shengli, Blair, Richard, Chen, Quanfang, University of Central Florida
- Abstract / Description
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Graphite is an allotrope of carbon made up of atomically thin sheets, each covalently bound together, forming a ?-conjugated network. An individual layer, called graphene, has extraordinary electrical, thermal and physical properties that provide the opportunity for innovating new functional composites. Graphene can be produced directly on a metallic substrate by chemical vapor deposition or by chemical oxidation of graphite, forming a stable aqueous suspension of graphene oxide (GO), which...
Show moreGraphite is an allotrope of carbon made up of atomically thin sheets, each covalently bound together, forming a ?-conjugated network. An individual layer, called graphene, has extraordinary electrical, thermal and physical properties that provide the opportunity for innovating new functional composites. Graphene can be produced directly on a metallic substrate by chemical vapor deposition or by chemical oxidation of graphite, forming a stable aqueous suspension of graphene oxide (GO), which allows for convenient solution processing techniques. For the latter, after thermal or chemical reduction, much of the properties of the starting graphene re-emerge due to the reestablishment of ?-conjugation. The ?-conjugated basal plane of graphene has been shown to influence the crystallization of ?-conjugated polymers, providing thermodynamically strong nucleation sites through the relatively strong ?-? interactions. These polymers can homocrystallize into 1-D filaments, but when nucleated from graphene, the orientation and geometry can be controlled producing hierarchical structures containing an electrical conductor decorated with wires of semi-conducting polymer. The resulting structures and crystallization kinetics of the conjugated polymer, poly(3-hexylthiophene-2,5-diyl) (P3HT) nucleated by graphene was studied. Further, field-effect transistors were developed using graphene as both the electrodes and the polymer crystallization surface to directly grow P3HT nanowires as the active material. This direct crystallization technique lead to higher charge mobility and higher on-off ratios, and this result was interpreted in terms of the morphology and polymer-graphene interface.Besides these thin-film technologies, neat GO suspensions can be lyophilized to produce monolithic, free-standing aerogels and then reduced to produce an electrically conductive porous material with a surface area greater than 1000 m2/g. The present research focuses on functionalizing the aerogel surfaces with metal nanoparticles to increase electrical conductivity and to impart functionality. Functionalization was carried out by adding a metal salt as a precursor and a chelating agent to inhibit GO flocculation. The GO and metal salt were simultaneously reduced to form rGO aerogels homogeneously loaded with metal nanoparticles. The size and distribution of these nanoparticles was controlled by concentration and chelating agent identity and abundance. Optimum aerogel formulations were used as a functioning and reversible conductometric hydrogen gas sensor and as an anode in an asymmetric supercapacitor with excellent properties.
Show less - Date Issued
- 2015
- Identifier
- CFE0006227, ucf:51066
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006227