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CIRCUIT DESIGN AND RELIABILITY OF A CMOS RECEIVER
Title
CIRCUIT DESIGN AND RELIABILITY OF A CMOS RECEIVER.
Creator
Yang, Hong, Yuan, Jiann, University of Central Florida
Abstract / Description
This dissertation explores CMOS RF design and reliability for portable wireless receivers. The objective behind this research is to achieve an increase in integration level, and gain more understanding for RF reliability. The fields covered include device, circuit and system. What is under investigation is a multi-band multi-mode receiver with GSM, DCS-1800 and CDMA compatibility. To my understanding, GSM and CDMA dual-mode mobile phones are progressively investigated in industries, and few...
Show moreThis dissertation explores CMOS RF design and reliability for portable wireless receivers. The objective behind this research is to achieve an increase in integration level, and gain more understanding for RF reliability. The fields covered include device, circuit and system. What is under investigation is a multi-band multi-mode receiver with GSM, DCS-1800 and CDMA compatibility. To my understanding, GSM and CDMA dual-mode mobile phones are progressively investigated in industries, and few commercial products are available. The receiver adopts direct conversion architecture. Some improved circuit design methods are proposed, for example, for low noise amplifier (LNA). Except for band filters, local oscillators, and analog-digital converters which are usually implemented by COTS SAW filters and ICs, all the remaining blocks such as switch, LNA, mixer, and local oscillator are designed in MOSIS TSMC 0.35ìm technology in one chip. Meanwhile, this work discusses related circuit reliability issues, which are gaining more and more attention. Breakdown (BD) and hot carrier (HC) effects are important issues in semiconductor industry. Soft-breakdown (SBD) and HC effects on device and RF performance has been reported. Hard-breakdown (HBD) effects on digital circuits have also been investigated. This work uniquely address HBD effects on the RF device and circuit performance, taking low noise amplifier and power amplifier as targets.
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Date Issued
2004
Identifier
CFE0000212, ucf:46259
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0000212
HOT CARRIER EFFECT ON LDMOS TRANSISTORS
Title
HOT CARRIER EFFECT ON LDMOS TRANSISTORS.
Creator
Jiang, Liangjun, Yuan, Jiann S., University of Central Florida
Abstract / Description
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices...
Show moreOne of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.
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Date Issued
2007
Identifier
CFE0001551, ucf:47148
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0001551
STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY
Title
STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY.
Creator
Liu, Yi, Yuan, Jiann.S., University of Central Florida
Abstract / Description
As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to...
Show moreAs CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to achieve high gain with low noise figure, a LO to generate low noise signal with sufficient output power, wide tuning range, and high stability, and a mixer to up-convert or down-convert the signal with good linearity. However, the RF front-end circuit performance is very sensitive to the variation of device parameters. The experimental results show that device performance is degraded significantly subject to HC stress and BD. Therefore, RF front-end performance is degraded by HC and BD effects. With scaling and increasing chip power dissipation, operating temperatures for device have also been increasing. Another reliability concern, which is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias, arises when the operation temperature of devices increases. NBTI has received much attention in recent year and it is found that NIT is present for all stress conditions and NOT is found to occur at high VG. Therefore, the probability of BD in pMOSFET increases with temperature since trapped charges during the NBTI process increase, thus resulting in percolation, a main cause of oxide degradation. The above effects can cause significant degradations in transistors, thus leading to the shifts of RF performance. This dissertation focuses on the following aspects: (1) RF performance degradation in nMOSFET and pMOSFET due to hot carrier and soft breakdown effects are examined experimentally and will be used for circuit application in the future. (2) A modeling method to analyze the gate oxide breakdown effects on RF nMOSFET has been proposed. The device performance drifts due to gate oxide breakdown are examined, breakdown spot resistance and total gate capacitance are extracted before and after stress for 0.16 um CMOS technology. (3) LC voltage controlled oscillator (VCO) performance degradation due to gate oxide breakdown effect is evaluated. (4) NBTI, HCI and BD combined effects on RF performance degradation are investigated. A physical picture illustrating the NBTI induced BD process is presented. A model to evaluate the time-to-failure (TTF) during NBTI is developed. DCIV method is used to extract the densities of NIT and NOT. Measurements show that there is direct correlation between the steplike increase in the gate current and the oxide-trapped charge (NOT). However, Breakdown has nothing to do with interface traps (NIT). (5) It is found that the degradation due to NSH stress is more severe than that of NS stress at high temperature. A model aiming to evaluate the stress-induced degradation is also developed.
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Date Issued
2005
Identifier
CFE0000505, ucf:46465
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0000505
LOW POWER CMOS CIRCUIT DESIGN AND RELIABILITY ANALYSIS FOR WIRELESS MEMS SENSORS
Title
LOW POWER CMOS CIRCUIT DESIGN AND RELIABILITY ANALYSIS FOR WIRELESS MEMS SENSORS.
Creator
Sadat, Md Anwar, Yuan, Jiann, University of Central Florida
Abstract / Description
A sensor node 'AccuMicroMotion' is proposed that has the ability to detect motion in 6 degrees of freedom for the application of physiological activity monitoring. It is expected to be light weight, low power, small and cheap. The sensor node may collect and transmit 3 axes of acceleration and 3 axes of angular rotation signals from MEMS transducers wirelessly to a nearby base station while attached to or implanted in human body. This dissertation proposes a wireless electronic system-on-a...
Show moreA sensor node 'AccuMicroMotion' is proposed that has the ability to detect motion in 6 degrees of freedom for the application of physiological activity monitoring. It is expected to be light weight, low power, small and cheap. The sensor node may collect and transmit 3 axes of acceleration and 3 axes of angular rotation signals from MEMS transducers wirelessly to a nearby base station while attached to or implanted in human body. This dissertation proposes a wireless electronic system-on-a-single-chip to implement the sensor in a traditional CMOS process. The system is low power and may operate 50 hours from a single coin cell battery. A CMOS readout circuit, an analog to digital converter and a wireless transmitter is designed to implement the proposed system. In the architecture of the 'AccuMicroMotion' system, the readout circuit uses chopper stabilization technique and can resolve DC to 1 KHz and 200 nV signals from MEMS transducers. The base band signal is digitized using a 10-bit successive approximation register analog to digital converter. Digitized outputs from up to nine transducers can be combined in a parallel to serial converter for transmission by a 900 MHz RF transmitter that operates in amplitude shift keying modulation technique. The transmitter delivers a 2.2 mW power to a 50 Ù antenna. The system consumes an average current of 4.8 mA from a 3V supply when 6 sensors are in operation and provides an overall 60 dB dynamic range. Furthermore, in this dissertation, a methodology is developed that applies accelerated electrical stress on MOS devices to extract BSIM3 models and RF parameters through measurements to perform comprehensive study, analysis and modeling of several analog and RF circuits under hot carrier and breakdown degradation.
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Date Issued
2004
Identifier
CFE0000304, ucf:46318
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0000304
STUDY OF GATE OXIDE BREAKDOWN AND HOT ELECTRON EFFECT ON CMOS CIRCUIT PERFORMANCES
Title
STUDY OF GATE OXIDE BREAKDOWN AND HOT ELECTRON EFFECT ON CMOS CIRCUIT PERFORMANCES.
Creator
MA, JUN, Yuan, Jiann S., University of Central Florida
Abstract / Description
In the modern semiconductor world, there is a significant scaling of the transistor dimensions –The transistor gate length and the gate oxide thickness drop down to only several nanometers. Today the semiconductor industry is already dominated by submicron devices and other material devices for the high transistor density and performance enhancement. In this case, the semiconductor reliability issues are the most important thing for commercialization. The major reliability issues caused...
Show moreIn the modern semiconductor world, there is a significant scaling of the transistor dimensions –The transistor gate length and the gate oxide thickness drop down to only several nanometers. Today the semiconductor industry is already dominated by submicron devices and other material devices for the high transistor density and performance enhancement. In this case, the semiconductor reliability issues are the most important thing for commercialization. The major reliability issues caused by voltage are hot carrier effects (HCs) and gate oxide breakdown (BD) effects. These issues are recently more important to industry, due to the small size and high lateral field in short-channel of the device will cause high electrical field and other reliability issues. This dissertation primarily focuses on the study of the CMOS device gate oxide breakdown effect on different kinds of circuits performance, also some HC effects on circuit's performance are studied. The physical mechanisms for BD have been presented. A practical and accurate equivalent breakdown circuit model for the CMOS device was studied to simulate the RF performance degradation on the circuit level. The BD location effect has been evaluated. Furthermore, a methodology was developed to predict the BD effects on the circuit's performances with different kinds of BD location. It also provides guidance for the reliability considerations of the digital, analog, and RF circuit design. The BD effects on digital circuits SRAM, analog circuits Sample&Hold, and RF building blocks with the nanoscale device – low noise amplifier, LC oscillator, mixer, and power amplifier, have been investigated systematically. Finally 90 nm device will be used to study the HC effect on the circuit's performance. The contributions of this dissertation include: Providing a thorough study of the gate oxide breakdown issues caused by the voltage stress on the device – from device level to circuit level; Studying real voltage stress case – high frequency (950 MHz) dynamic stress, and comparing with the traditional DC stress; A simple, practical, and analytical method is derived to study the gate oxide breakdown effect including breakdown location effect and soft / hard breakdown on the digital, analog and RF circuits performances. A brief introduction and simulation for 90 nm device HC effect provide some useful information and helpful data for the industry. The gate oxide breakdown effect is the most common device reliability issue. The successful results of this dissertation, from device level to circuit level, provide an insight on how the BD affects the circuit's performance, and also provide some useful data for the circuit designers in their future work.
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Date Issued
2009
Identifier
CFE0002856, ucf:48073
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0002856
RF Circuit Designs for Reliability and Process Variability Resilience
Title
RF Circuit Designs for Reliability and Process Variability Resilience.
Creator
Kritchanchai, Ekavut, Yuan, Jiann-Shiun, Sundaram, Kalpathy, Wei, Lei, Lin, Mingjie, Chow, Lee, University of Central Florida
Abstract / Description
Complementary metal oxide semiconductor (CMOS) radio frequency (RF) circuit design has been an ever-lasting research field. It has gained so much attention since RF circuits offer high mobility and wide-band efficiency, while CMOS technology provides the advantage of low cost and high integration capability. At the same time, CMOS device size continues to scale to the nanometer regime. Reliability issues with RF circuits have become more challenging than ever before. Reliability mechanisms,...
Show moreComplementary metal oxide semiconductor (CMOS) radio frequency (RF) circuit design has been an ever-lasting research field. It has gained so much attention since RF circuits offer high mobility and wide-band efficiency, while CMOS technology provides the advantage of low cost and high integration capability. At the same time, CMOS device size continues to scale to the nanometer regime. Reliability issues with RF circuits have become more challenging than ever before. Reliability mechanisms, such as gate oxide breakdown, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. In addition, process variability becomes a new design paradigm in modern RF circuits.In this Ph.D. work, a class F power amplifier (PA) was designed and analyzed using TSMC 180nm process technology. Its pre-layout and post-layout performances were compared. Post-layout parasitic effect decreases the output power and power-added efficiency. Physical insight of hot electron impact ionization and device self-heating was examined using the mixed-mode device and circuit simulation to mimic the circuit operating environment. Hot electron effect increases the threshold voltage and decreases the electron mobility of an n-channel transistor, which in turn decreases the output power and power-added efficiency of the power amplifier, as evidenced by the RF circuit simulation results. The device self-heating also reduces the output power and power-added efficiency of the PA. The process, voltage, and temperature (PVT) effects on a class AB power amplifier were studied. A PVT compensation technique using a current-source as an on-chip sensor was developed. The adaptive body bias design with the current sensing technique makes the output power and power-added efficiency much less sensitive to process variability, supply voltage variation, and temperature fluctuation, predicted by our derived analytical equations which are also verified by Agilent Advanced Design System (ADS) circuit simulation.Process variations and hot electron reliability on the mixer performance were also evaluated using different process corner models. The conversion gain and noise figure were modeled using analytical equations, supported by ADS circuit simulation results. A process invariant current source circuit was developed to eliminate process variation effect on circuit performance. Our conversion gain, noise figure, and output power show robust performance against PVT variations compared to those of a traditional design without using the current sensor, as evidenced by Monte Carlo statistical simulation.Finally, semiconductor process variations and hot electron reliability on the LC-voltage controlled oscillator (VCO) performance was evaluated using different process models. In our newly designed VCO, the phase noise and power consumptions are resilient against process variation effect due to the use of on-chip current sensing and compensation. Our Monte-Carlo simulation and analysis demonstrate that the standard deviation of phase noise in the new VCO design reduces about five times than that of the conventional design.
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Date Issued
2016
Identifier
CFE0006131, ucf:51182
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0006131
Adaptive Architectural Strategies for Resilient Energy-Aware Computing
Title
Adaptive Architectural Strategies for Resilient Energy-Aware Computing.
Creator
Ashraf, Rizwan, DeMara, Ronald, Lin, Mingjie, Wang, Jun, Jha, Sumit, Johnson, Mark, University of Central Florida
Abstract / Description
Reconfigurable logic or Field-Programmable Gate Array (FPGA) devices have the ability to dynamically adapt the computational circuit based on user-specified or operating-condition requirements. Such hardware platforms are utilized in this dissertation to develop adaptive techniques for achieving reliable and sustainable operation while autonomously meeting these requirements. In particular, the properties of resource uniformity and in-field reconfiguration via on-chip processors are exploited...
Show moreReconfigurable logic or Field-Programmable Gate Array (FPGA) devices have the ability to dynamically adapt the computational circuit based on user-specified or operating-condition requirements. Such hardware platforms are utilized in this dissertation to develop adaptive techniques for achieving reliable and sustainable operation while autonomously meeting these requirements. In particular, the properties of resource uniformity and in-field reconfiguration via on-chip processors are exploited to implement Evolvable Hardware (EHW). EHW utilize genetic algorithms to realize logic circuits at runtime, as directed by the objective function. However, the size of problems solved using EHW as compared with traditional approaches has been limited to relatively compact circuits. This is due to the increase in complexity of the genetic algorithm with increase in circuit size. To address this research challenge of scalability, the Netlist-Driven Evolutionary Refurbishment (NDER) technique was designed and implemented herein to enable on-the-fly permanent fault mitigation in FPGA circuits. NDER has been shown to achieve refurbishment of relatively large sized benchmark circuits as compared to related works. Additionally, Design Diversity (DD) techniques which are used to aid such evolutionary refurbishment techniques are also proposed and the efficacy of various DD techniques is quantified and evaluated.Similarly, there exists a growing need for adaptable logic datapaths in custom-designed nanometer-scale ICs, for ensuring operational reliability in the presence of Process, Voltage, and Temperature (PVT) and, transistor-aging variations owing to decreased feature sizes for electronic devices. Without such adaptability, excessive design guardbands are required to maintain the desired integration and performance levels. To address these challenges, the circuit-level technique of Self-Recovery Enabled Logic (SREL) was designed herein. At design-time, vulnerable portions of the circuit identified using conventional Electronic Design Automation tools are replicated to provide post-fabrication adaptability via intelligent techniques. In-situ timing sensors are utilized in a feedback loop to activate suitable datapaths based on current conditions that optimize performance and energy consumption. Primarily, SREL is able to mitigate the timing degradations caused due to transistor aging effects in sub-micron devices by reducing the stress induced on active elements by utilizing power-gating. As a result, fewer guardbands need to be included to achieve comparable performance levels which leads to considerable energy savings over the operational lifetime.The need for energy-efficient operation in current computing systems has given rise to Near-Threshold Computing as opposed to the conventional approach of operating devices at nominal voltage. In particular, the goal of exascale computing initiative in High Performance Computing (HPC) is to achieve 1 EFLOPS under the power budget of 20MW. However, it comes at the cost of increased reliability concerns, such as the increase in performance variations and soft errors. This has given rise to increased resiliency requirements for HPC applications in terms of ensuring functionality within given error thresholds while operating at lower voltages. My dissertation research devised techniques and tools to quantify the effects of radiation-induced transient faults in distributed applications on large-scale systems. A combination of compiler-level code transformation and instrumentation are employed for runtime monitoring to assess the speed and depth of application state corruption as a result of fault injection. Finally, fault propagation models are derived for each HPC application that can be used to estimate the number of corrupted memory locations at runtime. Additionally, the tradeoffs between performance and vulnerability and the causal relations between compiler optimization and application vulnerability are investigated.
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Date Issued
2015
Identifier
CFE0006206, ucf:52889
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0006206